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8CMOS Fabrication Process Overview
8CMOS Fabrication Process Overview
N-Well
The substrate is P-Type. The N-channel device is built directly on the substrate, while the Pchannel device is built into a N-type well within the parent P-Type substrate.
Twin Tub
Both an N-Well and a P-Well are manufactured on a lightly doped N-type substrate.
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P-well on N-substrate
Steps : N-type substrate Oxidation, and mask (MASK 1) to create P-well (4-5m deep) P-well doping
P-well acts as substrate for nMOS devices. The two areas are electrically isolated using thick field oxide (and often isolation implants [not shown here])
SiO2
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P+ implant/diffusion
P+ mask
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N+ implant/diffusion N+ mask
P+ N-type substrate
N+
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P P+
P channel Device
N+
N channel Device
N-type substrate
CMOS fabrication process overview
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Vin P+ for P-substrate Vss contact) Vout Vdd N+ (for Nsubstrate contact)
N+
N channel Device
P+
N-well
P channel Device
P-type substrate
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This technology provides the basis for separate optimization of the nMOS and pMOS transistors, thus making it possible for threshold voltage, body effect and the channel transconductance of both types of transistors to be tuned independently. Generally, the starting material is a n+ or p+ substrate, with a lightly doped epitaxial layer on top. This epitaxial layer provides the actual substrate on which the n-well and the p-well are formed. Since two independent doping steps are performed for the creation of the well regions, the dopant concentrations can be carefully optimized to produce the desired device characteristics. The Twin-Tub process is shown below.
In the conventional p & n-well CMOS process, the doping density of the well region is typically about one order of magnitude higher than the substrate, which, among other effects, results in unbalanced drain parasitics. The twin-tub process avoids this problem.
CMOS fabrication process overview
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The SOI CMOS process is considerably more costly than the standard p & n-well CMOS process. Yet the improvements of device performance and the absence of latch-up problems can justify its use, especially for deep-sub-micron devices.
CMOS fabrication process overview