SOLA3540/ 9001: Applied Photovoltaics

(SEMESTER 1 2011)

TOPIC TEST EXAMPLE- SOLUTIONS

1(b)

An array of photovoltaic modules is being installed on the roof of a house in Sydney (latitude
34S, longitude 151E).
(i) Calculate the solar noon altitude on 21 June.
(ii) Calculate the tilt angle of the module at which solar radiation would be maximum.
Solution:
(i) = -34
June 21st, = 23.45,
Altitude of the sun, F_Nth = 90 + ( ) = 90 - 34 - 23.45 = 32.55

(ii) Direct component of solar radiation (at noon) on a tilted surface SB is given by:

S S

sin( )
sin( )

where,
S = direct component of solar radiation on horizontal surface
= Suns altitude at solar noon
= tilt angle of PV module w.r.t horizontal
For maximum solar radiation on the tilted surface,

sin( ) 1 sin 90
90 90 32.55 57.45
1(c)

A silicon solar cell of area 100 cm2 has a VOC = 600 mV and an ISC = 3.3 A at 300K under 1-sum
(1 kW/m2) illumination. Assuming the cell is ideal calculate:
(i) The dark saturation current density, J0 , of the cell.
(ii) The ISC of the cell under 10-suns illumination.
(iii) The VOC of the cell under 10-sun illumination.
Solution:
(i) Open circuit voltage of a cell is given by:

VOC

nkT I L
nkT I L
ln 1
ln
q
q
I0

I0

I0

I SC
IL

2.8 10 10 A
qV
qV
exp OC exp OC
nkT
nkT

IL
1
since
I0

 I L I SC 3.3 A; VOC 0.6V

where nkT 1 1.38 10 23 300

0.0259
19
q
1.6 10

Therefore, the dark saturation current density

J0

I 0 2.8 10 10 A

2.8 10 12 A / cm 2
A
100cm 2

(ii) The ISC of the cell under 10-suns illumination = 10x ISC (1-sun) = 33A

(iii) The VOC of the cell under 10-sum is:

VOC

2(c)

nkT I SC(10sum)
33 A

0.0259V ln
ln
0.66V
10
q
I
2
.
8

10
A

A commercial cell has a top n-layer sheet resistivity of 35 /square and gives its maximum
power output at a voltage of 420 mV and a current density of 28 mA/cm2. If the finger
spacing is 3 mm, calculate the fractional power loss due to lateral current flow in the top layer.
Solution:
The fractional power loss due to the resistance of the top n-layer is given by:

Pfrac

Ploss s S 2 J MP

Pgen
12VMP

Given:
Sheet resistivity of n-layer, S = 35 /sq.;
Voltage at maximum power point, VMP = 420mV = 0.42V;
Current density at maximum power point, JMP = 28 mA/cm2= 28x10-3 A/cm2; and
Finger spacing, S = 3mm = 0.3cm
Substituting these values in above equation we get

Pfrac

Ploss s S 2 J MP (35 / sq.)(0.3cm) 2 (28 10 3 A / cm 2 )

0.0175 1.75%
Pgen
12VMP
12 0.42V