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Devices
AN OVERVIEW OF THE SUBJECT
Contents
1.
2.
3.
4.
5.
Subject Information
The study of Electronics
History
Semiconductor
Materials
Atomic Structure
Subject Information
Code: EE120
Text Book: Electronic Devices & Circuits by Theodore F.
Bogart 6th ed.
Electronic Devices & Circuits by David A Bell 4th ed.
Electronic Devices & Circuits by Floyd
Electronic Devices & Circuits by Manzar Saeed
Basics of Electronic Device by NIIT
Marks distribution
Introduction
Semiconductor Devices
Transistors
Bipolar Junction Transistor (BJT)
NPN BJT
PNP BJT
Junction Field Effect Transistor
(JFET)
Amplifier Fundamentals
Small Signal Transistor Amplifier
Integrated Circuits (ICs)
Analog ICs
Digital ICs
Silicon Atom
Orbits or Shells
K, L, M,N
P=14
N=14
Valence Shell
+
Ne( Electrons in nth orbit) = 2n2
Sub-shells
Shell
Sub-shell
Capacity
10
10
14
Free Electrons
+
Valence electrons have more tendency to become free
electrons because of less attraction force between nucleus
and valence shell
Free electrons in (i) conductors (ii) Insulators & (iii) Semiconductors
Force of repulsion
-
Excess of electrons
Lack of electrons
Si Crystal
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Current in Semiconductors
HOLE CURRENT
Contents
1.
2.
3.
4.
5.
Basics
Electron Energy
Energy Bands
Temperature &
Resistance
Holes & Hole Current
Basics:
Important Quantities
Quantity
Symbol
Unit
Unit Symbol
Current
Ampere
Voltage
Volt
Charge
Coulomb
Energy
W,E
Joule
Volt/meter
V/m
Volume
Cubic meter
m3
Area
Squared meter
m2
Resistance
Ohm
Conductance
Moh, Siemens
Resistivity
Ohm-meter
-m
Conductivity
Siemens/meter
S/m
Important Relations
V = IR (Ohm's Law)
I = Q/t
W = QV
R = l/A
G = 1/R
= 1/
Charge on electron = e = 1.602 X 10-19 C
Electron energy = 1 eV = 1.602 X 10-19 J
Hole created
Electron Freed
(Conduction Band)
+
Valence band
+
+
+
Energy is supplied in the form of
heat to rupture covalent band
Electron Energy
E2
Therefore:
P=14
N=14
E3
E1
E1 > E2 > E3
Energy Bands:
Quantum theory explain these bands as
Conduction Band :
Free electrons accommodate there
Valence Band :
Energy Bands
eV
Conduction Band
(Free Electrons)
Energy
Gap
Forbidden Band
Valence Band
(Electrons in Valence Shell)
Conduction Band
Conduction Band
Forbidden Band
Forbidden Band
Valence Band
Valence Band
Conductors
Insulators
Conduction Band
Conduction Band
1.1eV
0.01eV
Forbidden Band
0.67eV
Forbidden Band
Valence Band
Valence Band
Silicon
Germanium
Temperature dependent
dR
Temp. Coeff. = =
dT
= -ive
= +ive
I
I
R
R
T
Conductors
T
Semiconductors
Hole Movement
+
+
Electron Movement
Charge Carriers
+
+
Intrinsic Semiconductor
+
-
Germanium
Carriers/m3
Copper
Carriers/m3
1.5 X 1016
2.4 X 1019
8.4 X 1028
Thank You