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SEMICONDUCTOR TECHNICAL DATA by BC556/D

 
PNP Silicon  
 
COLLECTOR  
1

2
BASE

3
EMITTER

MAXIMUM RATINGS
1
BC BC BC 2
3
Rating Symbol 556 557 558 Unit
Collector Emitter Voltage VCEO 65 45 30 Vdc CASE 2904, STYLE 17
TO92 (TO226AA)
Collector Base Voltage VCBO 80 50 30 Vdc
Emitter Base Voltage VEBO 5.0 Vdc
Collector Current Continuous IC 100 mAdc
Total Device Dissipation @ TA = 25C PD 625 mW
Derate above 25C 5.0 mW/C
Total Device Dissipation @ TC = 25C PD 1.5 Watt
Derate above 25C 12 mW/C
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 C/W
Thermal Resistance, Junction to Case RqJC 83.3 C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage V(BR)CEO V
(IC = 2.0 mAdc, IB = 0) BC556 65
BC557 45
BC558 30
Collector Base Breakdown Voltage V(BR)CBO V
(IC = 100 Adc) BC556 80
BC557 50
BC558 30
Emitter Base Breakdown Voltage V(BR)EBO V
(IE = 100 mAdc, IC = 0) BC556 5.0
BC557 5.0
BC558 5.0
CollectorEmitter Leakage Current ICES
(VCES = 40 V) BC556 2.0 100 nA
(VCES = 20 V) BC557 2.0 100
BC558 2.0 100
(VCES = 20 V, TA = 125C) BC556 4.0 A
BC557 4.0
BC558 4.0

Motorola SmallSignal Transistors, FETs and Diodes Device Data 1

Motorola, Inc. 1996
     

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain hFE
(IC = 10 Adc, VCE = 5.0 V) BC557A 90
BC556B/557B/558B 150
BC557C 270
(IC = 2.0 mAdc, VCE = 5.0 V) BC556 120 500
BC557 120 800
BC558 120 800
BC557A 120 170 220
BC556B/557B/558B 180 290 460
BC557C 420 500 800
(IC = 100 mAdc, VCE = 5.0 V) BC557A 120
BC556B/557B/558B 180
BC557C 300
Collector Emitter Saturation Voltage VCE(sat) V
(IC = 10 mAdc, IB = 0.5 mAdc) 0.075 0.3
(IC = 10 mAdc, IB = see Note 1) 0.3 0.6
(IC = 100 mAdc, IB = 5.0 mAdc) 0.25 0.65
Base Emitter Saturation Voltage VBE(sat) V
(IC = 10 mAdc, IB = 0.5 mAdc) 0.7
(IC = 100 mAdc, IB = 5.0 mAdc) 1.0
BaseEmitter On Voltage VBE(on) V
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 0.55 0.62 0.7
(IC = 10 mAdc, VCE = 5.0 Vdc) 0.7 0.82

SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product fT MHz
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC556 280
BC557 320
BC558 360
Output Capacitance Cob 3.0 6.0 pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = 0.2 mAdc, VCE = 5.0 V, BC556 2.0 10
RS = 2.0 kW, f = 1.0 kHz, f = 200 Hz) BC557 2.0 10
BC558 2.0 10
SmallSignal Current Gain hfe
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC556 125 500
BC557/558 125 900
BC557A 125 220 260
BC556B/557B/558B 240 330 500
BC557C 450 600 900

Note 1: IC = 10 mAdc on the constant base current characteristics, which yields the point IC = 11 mAdc, VCE = 1.0 V.

2 Motorola SmallSignal Transistors, FETs and Diodes Device Data

      

BC557/BC558

2.0 1.0
TA = 25C
hFE , NORMALIZED DC CURRENT GAIN

1.5 VCE = 10 V 0.9

TA = 25C 0.8 VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
1.0 0.7
0.6 VBE(on) @ VCE = 10 V
0.7
0.5
0.5 0.4
0.3

0.3 0.2
0.1 VCE(sat) @ IC/IB = 10

0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. Saturation and On Voltages

2.0 1.0
VCE , COLLECTOREMITTER VOLTAGE (V)

VB , TEMPERATURE COEFFICIENT (mV/ C)

TA = 25C 55C to +125C
1.2
1.6

1.6
1.2
2.0
IC = IC = 50 mA IC = 200 mA
0.8
10 mA
2.4
IC = 100 mA
IC = 20 mA
0.4
2.8

0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region Figure 4. BaseEmitter Temperature Coefficient

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)

10 400
Cib 300
7.0
TA = 25C 200
C, CAPACITANCE (pF)

5.0 150 VCE = 10 V

TA = 25C
Cob 100
3.0
80
60
2.0
40
30

1.0 20
0.4 0.6 1.0 2.0 4.0 6.0 10 20 30 40 0.5 1.0 2.0 3.0 5.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances Figure 6. CurrentGain Bandwidth Product

Motorola SmallSignal Transistors, FETs and Diodes Device Data 3

     

BC556

1.0
hFE , DC CURRENT GAIN (NORMALIZED)

TJ = 25C
VCE = 5.0 V
TA = 25C 0.8
VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
2.0
0.6
VBE @ VCE = 5.0 V
1.0
0.4
0.5

0.2
0.2 VCE(sat) @ IC/IB = 10

0
0.1 0.2 1.0 2.0 5.0 10 20 50 100 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain Figure 8. On Voltage

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

2.0 1.0

VB, TEMPERATURE COEFFICIENT (mV/ C)

1.6 1.4
IC = 20 mA 50 mA 100 mA 200 mA
1.2 10 mA 1.8
VB for VBE
55C to 125C
0.8 2.2

0.4 2.6

TJ = 25C
0 3.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region Figure 10. BaseEmitter Temperature Coefficient

40
f T, CURRENTGAIN BANDWIDTH PRODUCT

VCE = 5.0 V
TJ = 25C 500
20 Cib
C, CAPACITANCE (pF)

200

10 100
8.0
6.0 50
Cob
4.0
20

2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 10 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance Figure 12. CurrentGain Bandwidth Product

4 Motorola SmallSignal Transistors, FETs and Diodes Device Data

      

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED) 0.2
r(t), TRANSIENT THERMAL

0.3
0.2 SINGLE PULSE
0.05
0.1 ZJC(t) = (t) RJC
0.1 P(pk) RJC = 83.3C/W MAX
0.07 SINGLE PULSE ZJA(t) = r(t) RJA
0.05 t1 RJA = 200C/W MAX
D CURVES APPLY FOR POWER
0.03 t2 PULSE TRAIN SHOWN
0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t1
TJ(pk) TC = P(pk) RJC(t)
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

Figure 13. Thermal Response

200
1s 3 ms
IC, COLLECTOR CURRENT (mA)

100
The safe operating area curves indicate ICVCE limits of the
TA = 25C TJ = 25C transistor that must be observed for reliable operation. Collector load
50
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon T J(pk) = 150C; TC or TA is
BC558 variable depending upon conditions. Pulse curves are valid for duty
10
BC557 cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from
BC556 the data in Figure 13. At high case or ambient temperatures, thermal
5.0 limitations will reduce the power than can be handled to values less
BONDING WIRE LIMIT
than the limitations imposed by second breakdown.
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
1.0 5.0 10 30 45 65 100
VCE, COLLECTOREMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

Motorola SmallSignal Transistors, FETs and Diodes Device Data 5

     

PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION XX J 0.015 0.020 0.39 0.50
V C K 0.500 12.70
L 0.250 6.35
N 0.080 0.105 2.04 2.66
1 N P 0.100 2.54
R 0.115 2.93
N V 0.135 3.43

STYLE 17:
CASE 02904 PIN 1. COLLECTOR
2. BASE
(TO226AA) 3. EMITTER
ISSUE AD

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6 Motorola SmallSignal Transistors, FETs and Diodes Device Data


BC556/D