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Multisim VI-Characteristics of Diode

VI Characteristics of PN Junction Diode Simulation with Multisim software
version 12.0
AIM:
To plat the VI characteristics of Semiconductor PN Junction diode.
Required Virtual Components.

S.NO NAME DESCRIPTION QUANTITY

1. RESIS Resistor 1k 1

2. Diode 1N4007 1

3. DC Source DC 12V 12V

THEORY:
The positive supply is connected to the anode and a negative supply to the cathode of the PN
Semiconductor diode is called Forward Bias. Increase the +ve supply to anode, the depletion
region width decrease and conduction of electron increase.
The VI characteristics may be obtained by performed DC sweep analysis. The applied voltage is
vary from an initial value of 0 to stop vale of 1 V in the step of increment 0.1v. To get VI
characteristics, the currents corresponding to varying input voltages are noted and VI graph is
observed in the output graph.

PROCEDURE:
Double click the multisim icon.
Select virtual components.
Click power source icon and select DC power supply.
Click diode family icon and select virtual diode.
 Click simulate > Analyses > DC sweep then get below icon

Enter Start, Stop and increment value as below mentioned.

Click Output > All variables

Select diode (Id)current to output with the help of add button.
Finally click simulate button to get below output graph.
Click Graph icon button.