CEP51A3/CEB51A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V.

RDS(ON) =28mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability. D

Lead free product is acquired.

TO-220 & TO-263 package.

D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 48 A
a
Drain Current-Pulsed IDM 160 A
Maximum Power Dissipation @ TC = 25 C 70 W
PD
- Derate above 25 C 0.48 W/ C
Operating and Store Temperature Range TJ,Tstg -55 to 175 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case RθJC 2.1 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W

2004.October http://www.cetsemi.com
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 CEP51A3/CEB51A3
Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units 4

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 V
Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V 1 µA
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics b
Gate Threshold Voltage VGS(th) VGS = VDS , ID = 250µA 1 3 V
Static Drain-Source VGS = 10 V, ID = 20A 13.5 16.5 mΩ
RDS(on)
On-Resistance VGS = 4.5V, ID = 20A 20 28 mΩ
Forward Transconductance gFS VDS = 10 V, ID = 20A 26 S
c
Dynamic Characteristics
Input Capacitance Ciss 1340 pF
VDS = 25V , VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 232 pF
Reverse Transfer Capacitance Crss 82 pF
Switching Characteristics c
Turn-On Delay Time td(on) 16 40 ns
Turn-On Rise Time tr VDD =15V, ID =20A, 4.4 13 ns
VGS = 4.5V, RGEN =4.7Ω
Turn-Off Delay Time td(off) 31 62 ns
Turn-Off Fall Time tf 4.5 14 ns
Total Gate Charge Qg 13 23 nC
VDS = 24V, ID =40A,
Gate-Source Charge Qgs VGS = 5V 4 nC
Gate-Drain Charge Qgd 4 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current IS 48 A
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 40A 1.3 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.

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 CEP51A3/CEB51A3
30 100
VGS=10,8,6,5,4V 25 C

24 80
ID, Drain Current (A)

ID, Drain Current (A)

18 60

VGS=3V
12 40

6 20
TJ=125 C -55 C
0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

1800 2.2
ID=20A
RDS(ON), On-Resistance(Ohms)

VGS=10V
1500 1.9
Ciss
C, Capacitance (pF)

RDS(ON), Normalized

1200 1.6

900 1.3

600 1.0

Coss
300 0.7
Crss
0 0.4
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS
Gate-Source Threshold Voltage

VGS=0V
IS, Source-drain current (A)

1.2 ID=250µA

2
VTH, Normalized

1.1 10

1.0

0.9
1
10
0.8

0.7

0
0.6 10
-50 -25 0 25 50 75 100 125 150 0.2 0.6 1.0 1.4 1.8 2.2

TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

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 CEP51A3/CEB51A3
3
10 10
VDS=24V
VGS, Gate to Source Voltage (V)

8
ID=40A
4

ID, Drain Current (A)

RDS(ON)Limit
2
10 100µs
6 1ms
10ms
100ms
4 DC
1
10

2
TC=25 C
TJ=175 C
0 Single Pulse
0 10
0 4 8 12 16 20 24 -1 0 1 2
10 10 10 10

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge Figure 8. Maximum Safe

Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

Transient Thermal Impedance

0
10
r(t),Normalized Effective

D=0.5

0.2

-1 0.1 PDM
10
0.05 t1
t2
0.02
1. RθJC (t)=r (t) * RθJC
0.01 2. RθJC=See Datasheet
Single Pulse 3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-2 -1 0 1 2 3 4
10 10 10 10 10 10 10

Square Wave Pulse Duration (msec)

Figure 11. Normalized Thermal Transient Impedance Curve

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