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Assignment 3 PMMD PDF
Assignment 3 PMMD PDF
Using Sentaurus TCAD, simulate the Log(Id)-Vgs (for Vds =1V) and Id-Vds (for Vgs
=1V) characteristics and compare the energy band profiles in lateral (S-->D) direction for
Vgs = 0V, Vds = 0V and
Contact: Al (WF=4.1)
Semiconductor: Si
A. 1E16 cm-3
B. 1E17 cm-3
C. 1E18 cm-3
A. 100nm
B. 500nm
C. 1000nm
Solution :
Following are the graphs of the Log(Id)-Vgs (for Vds =1V) and Id-Vds (for Vgs =1V)
characteristics
1:A – channel doping 1E16 cm-3, channel length -500nm
Fig : ID Vs Vds(Vgs=1)
1:B – channel doping 1E17 cm-3, channel length -500nm
• The common observation from the above plots is that the drain current magnitude is
increasing with increase in doping concentration. It is to note that the values of gate
voltage in all the cases are kept constant.
• The increasing drain current leads to the increasing slope of the IV characteristics curve,
inverse of which decreases which is nothing but the ON resistance of the MOSFET .
• The accumulation and inversion gets stronger with increasing doping of the channel but
the threshold voltage increases. This results in lower saturation voltages of the MOSFET
as Vsat = Vgs-Vt and Vgs =1V in our study.
• The drain current depends on drain to source voltage parabolic in the ohmic or the linear
region. Eventually, the allowed charges considered in the conduction are based on
gradual channel approximation and can be seen form the graph.
• The resistance of the channel is proportional to its width-to-length ratio; reducing the
length leads to decreased resistance and hence higher current flow. Thus, channel-length
modulation means that the saturation-region drain current will increase slightly as the
drain-to-source voltage increases
• The drain current increases beyond certain value of Vgs , called the “Threshold voltage”
of MOSFET. On increasing the doping concentration of the channel, the threshold voltage
increases. This results in large margin on the ON state and less margin in the OFF state of
the MOSFET. For a particular Vds, the mosfet is in initial cutoff state, then the saturation
region and finally the linear region as the Vgs progresses.
• As the Vgs increases, the lateral field in the junction increases. This leads to formation of
inversion charges at the oxide substrate interface. This point being called Onset of
Inversion. As the Vgs goes further, the electron concentration increases enough to level
the majority concentration in substrate. This value of Vgs called Threshold voltage. After
further increase, the current increases rapidly due to firmly formed channel.
• Id is inversely proportional to the channel length .The lateral field applied due to Vgs
distributes equally among the channel. Therefore, the increase in Vgs has no significant
effect on the length and finally the drain current.
Following are the graphs of the Lateral Energy band profiles in lateral (S-->D)
direction for Vgs = 0V, Vds = 0V and Vgs = 0V, Vds = 1V