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1) A-Fill in The Spaces (1 or 2 Words at Most For Each Space)
1) A-Fill in The Spaces (1 or 2 Words at Most For Each Space)
1
2015/2016
1) A- What is meant by:
Intrinsic material Material without impurities (doping)
Extrinsic material Material with impurities (doping)
Positive temperature
coefficient
A process when a conduction electron lose energy and fall back
Recombination Process
into a hall
2) B- Fill in the spaces (1 or 2 words at most for each space)
1 The Varactor is used as capacitor in tuning circuits
Upon formation of the depletion region no more electrons diffuse from N-type to P-type
2 part because of electric field which can be overcome by using appropriate forward
biasing(external energy)
Most of insulators are high resistive(or compound) and most of the conducting materials
3
are low resistive(or single-element)
The tunnel diode has a special feature which is negative resistance and hence it used in
4
oscillators circuits
When using the practical model for diode we neglect dynamic resistance in the forward part of
5
the characteristics and we neglect the leakage current in the reverse part of the characteristics
2014/2015
1) A- Fill in the spaces (1 or 2 words at most for each space):
The term depletion region to the fact that the region near PN junction is depleted of
1
charge carriers
The barrier potential in PN junction depends on several factors among them are
2
temperature, material type and amount of doping
The reverse current is caused by the minority carriers in P and N regions that are
3
produced by thermal energy generated electron-hole pairs
The multiplication process of creating conduction electrons due to reverse bias of PN
4
junction is called avalanche process
The small increase in PN junction voltage above the barrier potential is due to voltage
5
drop across dynamic resistance
6 The transistor biasing circuit is primarily a trade-off between price and thermal stability
To increase rectified peak voltage (DC) without the need to increase the transformer
7
rating we use voltage multiplier circuits
The forward reverse bias of the transistor allows the transistor to work in active mode, and this
*8
achieved by the electric field built in the ……. Junction for common base configuration
In communication system (tuning circuits) we use varactor to adjust the resonance
9
frequency
10 The zener is used to regulate the current, it operates in the reverse bias region
2
2013/2014
1) A- Fill in the spaces (1 or 2 words at most for each space)
1 The current flows in valance band is due to the virtual motion of holes
Upon formation of the depletion region no more electrons diffuse from N-type to P-type
2 part because of electric field which can be overcome by using appropriate forward
biasing(external energy)
Most of insulators are high resistive(or compound) and most of the conducting materials
3
are low resistive(or single-element)
The avalanche phenomenon takes place due to minority carriers when they have enough
4
energy to release more valance electrons from nearby atoms (Floyd pg. 24)
When using the practical model for diode we neglect dynamic resistance in the forward part of
5
the characteristics and we neglect the leakage current in the reverse part of the characteristics
2012/2013
1) A- Correct and justify in brief صحح الخطأ مع التعليل باختصار
الخطأ التصويب التعليل
electron created by doping doesn’t leave a hole
By thermal
1 By doping because it is in excess of the number required to fill
energy
the valance band
Because hole is created in P type material by trivalent
2 holes electrons
impurities
Not Because number of negative charges is equal to
electrically
3 electrically number of positive charges (there is no lost or gain in
neutral
neutral electrons)
When 2 different
By the junctions
4
external …… attached to each
other
1) B- fill in the spaces:
The term depletion region to the fact that the region near PN junction is depleted of
1
charge carriers
The barrier potential in PN junction is dependent on temperature, material type and
2
amount of doping
Due to the forward bias of PN junction the depletion region is reduced because Negative
3 terminal of source ripple electrons in N type and Positive terminal of source ripple holes
in P type (effectively) -or attract electrons from P type-
The multiplication process of creating conduction electrons due to reverse bias of the
4
junction is called avalanche process