EC6201 ELECTRONIC DEVICES UNIT1 IMPORTANT PART A & PART B QUESTIONS WITH ANSWERS

UNIT II SYLLABUS: BIPOLAR JUNCTION: NPN-PNP-junctions-Early effect-current equations-input and output Characteristics of CE,CB CC-Hybrid-π model-h-parameter model, Ebers Moll
Model-Gummel Poon-Model, Multi Emitter transistor

UNIT2 IMPORTANT QUESTIONS:

Important question1: What is bipolar junction? Explain details about various types of bipolar junction devices.(8 MARKS) Answer:
Important question2: Explain details including construction and working principle of NPN-PNP transistors.(16 MARKS) Answer:
Important question3: Briefly Explain details about various junctions in BJT transistors.(2MARKS) Answer:
Important question4: Briefly Explain various characteristics including forward and reverse bias characteristics of CE,CB CC transistors.(16MARKS) Answer:
Important question5: Express and derive various current equations of BJT transistors.(8 MARKS) Answer:
Important question6: Briefly Explain details about various BJT transistors including Hybrid-π model-h-parameter model, Ebers Moll Model and Gummel Poon-Model.(16 MARKS) Answer:
Important question7: Explain details including construction and working principle of Multi Emitter transistor.(8 MARKS) Answer:
Important question4: Briefly explain Switching characteristics of PN junction diode.(16 MARKS)

UNIT2 Important fundamental 2 mark questions with answers

1).What is electronic device?
• A Component or device made with
semiconductor materials is called
electronic component or electronic
device.
2).What are the major electronic
devices?
• Diodes, transistors and IC (Integrated
Circuits).
3).Where electronic devices are
used?
• Electronic devices are used in all types
of electronic equipments and electronic
home appliances.
5).What is transistor?
• Transistor is abbreviation of transfer +
resistor.
• It is a three terminal semiconductor
6).What are the t ypes of transistors?
7).How these transistors looking in a
photo?
8).What are the s ymbols of these
transistors?
11).What is transistor biasing?
• Any transistor has both input and output
side.
• Transistor input side should be always
keep forward bias.
• Also transistor output side should be
always keep reverse bias.
• These type of biasing is called transistor
biasing.
13).What is transistor model?
• Equivalent circuit of a transistor is called
transistor model.
14).What are the t ypes of transistor
models?
• They are
1. Hybrid model or h parameter model
2. Hybrid π model
3. Ebers moll model
4. Gummel Poon model
15).What are the uses of these
transistor models?
• They are used to analyze the transistor
under both low and high frequency.

6).What is the main applications of 12).What are the t ypes of transistor

transistor? configurations?
• Transistors can be used as • They are
1. switch • Common Base or CB configuration
2. Amplifier • Common Emitter or CE configuration
• Common Collector or CC configuration

1
 Important Question 1: Briefly Explain structure and working principles of NPN and PNP BJT transistors.(16 marks) Answer:
BJT transistors 2).NPN transistor
1).What is BJT transistor? 2.1).What is NPN transistor?
• Short form of Bipolar Junction transistor • NPN transistor is a three terminal
is called BJT. semiconductor electronic device.
2.2).What is NPN transistor main
2).What are the t ypes of BJT? applications?
• They are • It can be used as switches & Amplifiers.
1. NPN transistor 2.3).What is s ymbol of a NPN
2. PNP transistor transistor?
• It is shown in figure 2.1 given below.
Figure 2.1
2.3).w hat is basic Structure of NPN
transistor?
• It is shown in figure 2.2 given below.
Emitter Base Collector
J1 J2
E C
N P N P
B B
Figure 2.2
2.4).W hat is construction of fig.2.2?
• A NPN transistor can be constructed as
shown in fig.2.2.
• A thin layer of P-type is sandwiched
between two N type layers such as
• Emitter layer having moderate size
and heavily doped.
• Base layer having small size and
lightly doped.
• Collector layer having large size and
moderately doped.
• Finally, the terminal wires are connected
with each layer.
• The terminal wires are named as E,B and C
for Emitter, Base and Collector respectively.
3).PNP transistor
3.1).What is PNP transistor?
• PNP transistor is a three terminal
semiconductor electronic device.
3.2).What is PNP transistor main
applications?
• It can be used as switches & Amplifiers.
3.3).What is s ymbol of a PNP
transistor?
• It is shown in figure 3.1 given below.
Figure 3.1
3.3).w hat is basic Structure of PNP
transistor?
• It is shown in figure 3.2 given below.
Emitter Base Collector
J1 J2
E C
N P
Figure 3.2
3.4).W hat is construction of fig.3.2?
• A PNP transistor can be constructed as
shown in fig.3.2.
• A thin layer of N-type is sandwiched
between two P type layers such as
• Emitter layer having moderate size
and heavily doped.
• Base layer having small size and
lightly doped.
• Collector layer having large size and
moderately doped.
• Finally, the terminal wires are connected
with each layer.
• The terminal wires are named as E,B and C
for Emitter, Base and Collector respectively.
2
2.5).What is operation of NPN
transistor?
• Operation of a NPN transistor can be
explained with a circuit diagram shown in
fig.2.3 given below.
N P N P
IE E C IC
Electrons
IB B IB
VEE VCC
- + - +
Figure 2.3
a).What is NPN transistor biasing?
• In any transistor’s input side should be
always forward bias and also transistor’s
output side should be reverse biased.
• This type of biasing method is called
transistor biasing.
• In fig.2.3, power supply VEE keeps
transistor input side is under forward
bias.
• Also power supply VCC keeps transistor
output side is under reverse bias.
b).What is NPN transistor operation?
Operation steps are
1. Power supply VEE produce current IE
and also make it flow from emitter to
base region.
2. At base, few (less than 5%) electrons
of current IE recombined with holes of
base produce current IB. Remaining
(more than 95%) electrons of current IE
becomes as current IC. It is expressed
by
3. Power supply VCC makes IC to flow
through collector region.
4. According to voltage VCC , a small
reverse current flows through the
collector region. So collector current
consists of majority carriers and
minority carriers, so the transistor is
called Bipolar Junction Transistor
(BJT).
3.5).What is operation of PNP
transistor?
• Operation of a PNP transistor can be
explained with a circuit diagram shown in
fig.3.3 given below.
N P
IE E C IC
Holes
B
VEE VCC
+ - + -
Figure 3.3
a).What is PNP transistor biasing?
• In any transistor’s input side should be
always forward bias and also transistor’s
output side should be reverse biased.
• This type of biasing method is called
transistor biasing.
• In fig.3.3, power supply VEE keeps
transistor input side is under forward
bias.
• Also power supply VCC keeps transistor
output side is under reverse bias.
b).What is PNP transistor operation?
Operation steps are
5. Power supply VEE produce current IE
and also make it flow from emitter to
base region.
6. At base, few (less than 5%) holes of
current IE recombined with electrons of
base produce current IB. Remaining
(more than 95%) holes of current IE
becomes as current IC. It is expressed
by
7. Power supply VCC makes IC to flow
through collector region.
8. According to voltage VCC , a small
reverse current flows through the
collector region. So collector current
consists of majority carriers and
minority carriers, so the transistor is
called Bipolar Junction Transistor
(BJT).
3
 Important Question 4: Briefly Explain CB,CE and CC configurations for NPN transistor.(16 marks) Answer:
Transistor configurations 4).NPN-CB configuration
1).What are the transistor 4.1).What is NPN-CB configuration?
configurations? • IF Base act as common terminal for both
• They are input and output side of NPN transistor,
• Common Base or CB configuration then that configuration is called NPN-CB
• Common Emitter or CE configuration configuration.
• Common Collector or CC configuration • It is shown in fig.4.1 given below.
E C
B E
Figure 4.1
4.2).What is circuit diagram for NPN-
CB configuration?
• It is shown in fig.4.2 given below.
- A + IE E C IC - +
A +A-
+ +
- -
V VCB V-
B - VBB
+ VEE +VEB IB VCC -
Figure 4.2
4.3).What is construction of fig.4.2?
• A NPN CB transistor can be constructed
as shown in fig.4.2.
4.4).What is biasing in fig.4.2?
• In fig.4.2 shows that
• power supply VEE keeps transistor input
side under forward bias.
• power supply VCC keeps transistor output
side under reverse bias.
4.5).What is circuit connection in
fig.4.2?
• A NPN CB transistor circuit can be
connected as shown in fig.4.2.
• Here Ammeters and voltmeters are used
to measure both input and output current
and voltages.
5).NPN-CE configuration
5.1).What is NPN-CE configuration?
• IF Emitter act as common terminal for
both input and output side of NPN
transistor, then that configuration is
called NPN-CE configuration.
• It is shown in fig.5.1 given below.
C E
B B
Figure 5.1
5.2).What is circuit diagram for NPN-
CE configuration?
• It is shown in fig.5.2 given below.
+ - IC
C A
IB
B -
V V
+ +
V E + VCE
- VBE IE
Figure 5.2
5.3).What is construction of fig.5.2?
• A NPN CE transistor can be constructed
as shown in fig.5.2.
5.4).What is biasing in fig.5.2?
• In fig.5.2 shows that
• power supply VBB keeps transistor input
side under forward bias.
• power supply VCC keeps transistor output
side under reverse bias.
5.5).What is circuit connection in
fig.5.2?
• A NPN CE transistor circuit can be
connected as shown in fig.5.2.
• Here Ammeters and voltmeters are used
to measure both input and output current
and voltages.
4
6).NPN-CC configuration
6.1).What is NPN-CC configuration?
• IF Emitter act as common terminal for
both input and output side of NPN
transistor, then that configuration is
called NPN-CC configuration.
• It is shown in fig.6.1 given below.
C
Figure 6.1
6.2).What is circuit diagram for NPN-
CC configuration?
• It is shown in fig.6.2 given below.
+ - IE
B A
IB E
- +A- - -
+ +
VCC + V C + VCE VEE +
- VBB
- VBE IC
Figure 5.2
6.3).What is construction of fig.5.2?
• A NPN CC transistor can be constructed
as shown in fig.6.2.
6.4).What is biasing in fig.6.2?
• In fig.6.2 shows that
• power supply VBB keeps transistor input
side under forward bias.
• power supply VEE keeps transistor output
side under reverse bias.
4.5).What is circuit connection in
fig.6.2?
• A NPN CC transistor circuit can be
connected as shown in fig.6.2.
• Here Ammeters and voltmeters are used
to measure both input and output current
and voltages.
4.6).W hat is NPN-CB Input V-I 5.6).W hat is CE Input V-I 6.6).W hat is CC Input V-I
charac teri stics? charac teri stics? charac teri stics?
• It is shown in fig.4.3. • It is shown in fig.5.3. • It is shown in fig.6.3.

IE(mA) VEB = 1V
IB(μA) VCE = 1V IB(μA) VCE = 1V
VEB = 2V
VCE = 2V VCE = 2V

VEB
1 2 Figure 4.3 VBE VBE
1 2 Figure 5.3 1 2 Figure 5.3
4.7).What is operation in fig.4.3? 5.7).What is operation in fig.5.3? 6.7).What is operation in fig.6.3?
• Fig.4.3 shows that NPN-CB transistor • Fig.5.3 shows that NPN-CE transistor • Fig.6.3 shows that NPN-CC transistor
Input V-I characteristics curves during Input V-I characteristics curves during Input V-I characteristics curves during
VEB= 1V and VEB=2V. VCE= 1V and VCE=2V. VBC= 1V and VBC=2V.
• Fig.4.3 shows, until point1 and point2, • Fig.5.3 shows, until point1 and point2, • Fig.5.3 shows, until point1 and point2,
even though input voltage VEB increases even though input voltage VBE increases even though input voltage VBC increases
input current IE is zero. input current IB is zero. input current IB is zero.
• After point1 and point2, even though input • After point1 and point2, even though input • After point1 and point2, even though input
voltage VEB increases slowly input current IE voltage VBE increases slowly input current IB voltage VBC increases slowly input current IB
(mA) is increasing rapidly. (μA) is increasing rapidly. (μA) is increasing rapidly.
4.8).W hat is NPN-CB output V-I 5.8).W hat is NPN-CE output V-I 6.8).W hat is NPN-CC output V-I
charac teri stics? charac teri stics? charac teri stics?
• It is shown in fig.4.4. • It is shown in fig.5.4. • It is shown in fig.6.4.

IC(mA) Active IC(mA) Active IE(mA) Active

region region IB = 5μA region
IE = 5mA IB = 4μA IB = 5μA
Saturation IE = 4mA Saturation Saturation IB = 4μA
region region IB = 3μA region
IE = 3mA IB = 3μA
IB = 2μA
cut-off IE = 2mA cut-off IB = 1μA cut-off IB = 2μA
region IE = 1mA region region IB = 1μA
IE = 0mA IB = 0μA IB = 0μA
0 VCB 0 VCE 0 VEC
1 2 1 2 1 2
Figure 4.4 Figure 5.4 Figure 6.4
4.9).W hat is operation in fig.4.4? 5.9).W hat is operation in fig.5.4? 6.9).W hat is operation in fig.6.4?
• Fig.4.4 shows that NPN-CB transistor output • Fig.5.4 shows that NPN-CE transistor output • Fig.6.4 shows that NPN-CC transistor output
V-I characteristics curves during V-I characteristics curves during V-I characteristics curves during
IE=0mA,1mA,2mA,3mA,4mA and 5mA. IB=0μA,1μA,2μA,3μA,4μa and 5μA. IB=0μA,1μA,2μA,3μA,4μa and 5μA.
• It shows three operating regions. They are • It shows three operating regions. They are • It shows three operating regions. They are
• What is Cut-off region? It is region which is • What is Cut-off region? It is region which is • What is Cut-off region? It is region which is
under output curve when IE=0mA.In this under output curve when IB=0μA.In this under output curve when IB=0μA.In this
region, when voltage VCB increases current IC region, when voltage VCE increases current IC region, when voltage VEC increases current IE
increases but very low. increases but very low. increases but very low.
What is Saturation region? It is region which What is Saturation region? It is region which What is Saturation region? It is region which
is under from “0” to point1. In this region, is under from “0” to point1. In this region, is under from “0” to point1. In this region,
when voltage VCB increases current IC when voltage VCE increases current IC when voltage VEC increases current IE
increases rapidly. increases rapidly. increases rapidly.
What is active region? It is region which is What is active region? It is region which is • What is active region? It is region which is
under from point1 to point2. In this region, under from point1 to point2. In this region, under from point1 to point2. In this region,
when voltage VCB increases current IC is when voltage VCE increases current IC is when voltage VEC increases current IE is
maintain at its constant level. maintain at its constant level. maintain at its constant level.

5
 Important Question 5: Briefly Explain CB,CE and CC configurations for PNP transistor.(16 marks) Answer:
Transistor configurations 4).PNP-CB configuration
1).What are the transistor 4.1).What is PNP-CB configuration?
configurations? • IF Base act as common terminal for both
• They are input and output side of PNP transistor,
1. Common Base or CB configuration then that configuration is called PNP-CB
2. Common Emitter or CE configuration configuration.
3. Common Collector or CC • It is shown in fig.4.1 given below.
configuration
E C
B E
Figure 4.1
4.2).What is circuit diagram for PNP-
CB configuration?
• It is shown in fig.4.2 given below.
+ A - IE E C IC + -
A - A+
+ -
+ -V
V VCB V
B +V +
- VEE - VEB IB CC
Figure 4.2
4.3).What is construction of fig.4.2?
• A PNP CB transistor can be constructed
as shown in fig.4.2.
4.4).What is biasing in fig.4.2?
• In fig.4.2 shows that
• power supply VEE keeps transistor input
side under forward bias.
• power supply VCC keeps transistor output
side under reverse bias.
4.5).What is circuit connection in
fig.4.2?
• A PNP CB transistor circuit can be
connected as shown in fig.4.2.
• Here Ammeters and voltmeters are used
to measure both input and output current
and voltages.
5).PNP-CE configuration
5.1).What is PNP-CE configuration?
• IF Emitter act as common terminal for
both input and output side of PNP
transistor, then that configuration is
called PNP-CE configuration.
• It is shown in fig.5.1 given below.
C E
B B
Figure 5.1
5.2).What is circuit diagram for PNP-
CE configuration?
• It is shown in fig.5.2 given below.
- + IC
C A
IB
B +
- V
- - E CE VCC
V - VBB
+ VBB +VBE IE
Figure 5.2
5.3).What is construction of fig.5.2?
• A PNP CE transistor can be constructed
as shown in fig.5.2.
5.4).What is biasing in fig.5.2?
• In fig.5.2 shows that
• power supply VBB keeps transistor input
side under forward bias.
• power supply VCC keeps transistor output
side under reverse bias.
5.5).What is circuit connection in
fig.5.2?
• A PNP CE transistor circuit can be
connected as shown in fig.5.2.
• Here Ammeters and voltmeters are used
to measure both input and output current
and voltages.
6
6).PNP-CC configuration
6.1).What is PNP-CC configuration?
• IF Emitter act as common terminal for
both input and output side of PNP
transistor, then that configuration is
called PNP-CC configuration.
• It is shown in fig.6.1 given below.
C
Figure 6.1
6.2).What is circuit diagram for PNP-
CC configuration?
• It is shown in fig.6.2 given below.
- + IE
A
E
IB B
+ + - + +
A
V
- + -V
-
C EC VEE -
V
+VBE IC
Figure 6.2
6.3).What is construction of fig.5.2?
• A PNP CC transistor can be constructed
as shown in fig.6.2.
6.4).What is biasing in fig.6.2?
• In fig.6.2 shows that
• power supply VBB keeps transistor input
side under forward bias.
• power supply VEE keeps transistor output
side under reverse bias.
4.5).What is circuit connection in
fig.6.2?
• A PNP CC transistor circuit can be
connected as shown in fig.6.2.
• Here Ammeters and voltmeters are used
to measure both input and output current
and voltages.
4.6).W hat is PNP-CB Input V-I 5.6).W hat is CE Input V-I 6.6).W hat is CC Input V-I
charac teri stics? charac teri stics? charac teri stics?
• It is shown in fig.4.3. • It is shown in fig.5.3. • It is shown in fig.6.3.

IE(mA) VEB = 1V IB(μA) VCE = 1V IB(μA) VCE = 1V

VEB = 2V VCE = 2V VCE = 2V

VEB VBE VBE

1 2 Figure 4.3 1 2 Figure 5.3 1 2 Figure 5.3
4.7).What is operation in fig.4.3? 5.7).What is operation in fig.5.3? 6.7).What is operation in fig.6.3?
• Fig.4.3 shows that PNP-CB transistor • Fig.5.3 shows that PNP-CE transistor • Fig.6.3 shows that PNP-CC transistor
Input V-I characteristics curves during Input V-I characteristics curves during Input V-I characteristics curves during
VEB= 1V and VEB=2V. VCE= 1V and VCE=2V. VBC= 1V and VBC=2V.
• Fig.4.3 shows, until point1 and point2, • Fig.5.3 shows, until point1 and point2, • Fig.5.3 shows, until point1 and point2,
even though input voltage VEB increases even though input voltage VBE increases even though input voltage VBC increases
input current IE is zero. input current IB is zero. input current IB is zero.
• After point1 and point2, even though input • After point1 and point2, even though input • After point1 and point2, even though input
voltage VEB increases slowly input current IE voltage VBE increases slowly input current IB voltage VBC increases slowly input current IB
(mA) is increasing rapidly. (μA) is increasing rapidly. (μA) is increasing rapidly.
4.8).W hat is PNP-CB output V-I 5.8).W hat is PNP-CE output V-I 6.8).W hat is PNP-CC output V-I
charac teri stics? charac teri stics? charac teri stics?
• It is shown in fig.4.4. • It is shown in fig.5.4. • It is shown in fig.6.4.

IC(mA) Active IC(mA) Active IE(mA) Active

region region IB = 5μA region
IE = 5mA IB = 4μA IB = 5μA
Saturation IE = 4mA Saturation Saturation IB = 4μA
region region IB = 3μA region
IE = 3mA IB = 3μA
IB = 2μA
cut-off IE = 2mA cut-off IB = 1μA cut-off IB = 2μA
region IE = 1mA region region IB = 1μA
IE = 0mA IB = 0μA IB = 0μA
0 VCB 0 VCE 0 VEC
1 2 1 2 1 2
Figure 4.4 Figure 5.4 Figure 6.4
4.9).W hat is operation in fig.4.4? 5.9).W hat is operation in fig.5.4? 6.9).W hat is operation in fig.6.4?
• Fig.4.4 shows that PNP-CB transistor output • Fig.5.4 shows that PNP-CE transistor output • Fig.6.4 shows that PNP-CC transistor output
V-I characteristics curves during V-I characteristics curves during V-I characteristics curves during
IE=0mA,1mA,2mA,3mA,4mA and 5mA. IB=0μA,1μA,2μA,3μA,4μa and 5μA. IB=0μA,1μA,2μA,3μA,4μa and 5μA.
• It shows three operating regions. They are • It shows three operating regions. They are • It shows three operating regions. They are
• What is Cut-off region? It is region which is • What is Cut-off region? It is region which is • What is Cut-off region? It is region which is
under output curve when IE=0mA.In this under output curve when IB=0μA.In this under output curve when IB=0μA.In this
region, when voltage VCB increases current IC region, when voltage VCE increases current IC region, when voltage VEC increases current IE
increases but very low. increases but very low. increases but very low.
What is Saturation region? It is region which What is Saturation region? It is region which What is Saturation region? It is region which
is under from “0” to point1. In this region, is under from “0” to point1. In this region, is under from “0” to point1. In this region,
when voltage VCB increases current IC when voltage VCE increases current IC when voltage VEC increases current IE
increases rapidly. increases rapidly. increases rapidly.
What is active region? It is region which is What is active region? It is region which is • What is active region? It is region which is
under from point1 to point2. In this region, under from point1 to point2. In this region, under from point1 to point2. In this region,
when voltage VCB increases current IC is when voltage VCE increases current IC is when voltage VEC increases current IE is

7
 maintain at its constant level. maintain at its constant level. maintain at its constant level.

Important Question7: Explain various transistor models such as hybrid model, hybrid-π model, Ebers Moll Model and Gummel Poon-Model (each 8 marks) Answer:

• A BJT transistor can be represented as various transistor models such as hybrid model, hybrid-π model, Ebers Moll Model and Gummel Poon-Model.

1).Hybrid model 2).Hybrid-π model 3).Ebers Moll Model 4.)Gummel Poon Model

1.1).What is H ybrid model?
• A BJT transistor shown in fig.1.1(a) can
be represented as an equivalent circuit
or model which is shown in fig.1.1(b)
given below.
• This type of transistor model shown in
fig.1.1(b) is called transistor Hybrid
Model.
2.1).What is H ybrid-π model?
• A BJT transistor shown in fig.2.1(a) can
be represented as an equivalent circuit
or model which is shown in fig.2.1(b)
given below.
• This type of transistor model shown in
fig.2.1(b) is called transistor Hybrid-π
Model.
3.1).What is Ebers Moll model?
• A BJT transistor shown in fig.3.1(a) can
be represented as an equivalent circuit
or model which is shown in fig.3.1(b)
given below.
• This type of transistor model shown in
fig.3.1(b) is called transistor Ebers Moll
Model.
4.1).What is Gummel Poon model?
• A BJT transistor shown in fig.4.1(a) can
be represented as an equivalent circuit
or model which is shown in fig.4.1(b)
given below.
• This type of transistor model shown in
fig.4.1(b) is called transistor Gummel
Poon Model.

BJT CE Transistor’s Hybrid model BJT CE Transistor’s Hybrid-π Model BJT CE Transistor’s Ebers Moll Model BJT CE Transistor’s Gummel Poon Model

C B C C
B C E C
B E C E C
B E C

E B
E B
equivalent to E E equivalent to B Equivalent to B
equivalent to Figure 3.1(a) Figure 3.1(b)
Figure 1.1(a) Figure 1.1(b) Figure 2.1(a) Figure 2.1(b)
Figure 4.1(a) Figure 4.1(b)

1.2).What is main uses of this h ybrid 2.2).What is main uses of this H ybrid- 3.2).What is main uses of this Ebers 4.2).What is main uses of this
model? π model? Moll model? Gummel Poon model?
• hybrid model mainly used to analyze • Hybrid-π model mainly used to analyze • Ebers Moll model mainly used to analyze • Gummel Poon model mainly used to
low-frequency transistor circuits. low-frequency transistor circuits. low-frequency transistor circuits. analyze low-frequency transistor circuits.

1.2).What is construction of 2.2).What is construction of 3.2).What is construction of 4.2).What is construction of

fig.1.1(b)? fig.2.1(b)? fig.3.1(b)? fig.4.1(b)?
• Hybrid model of a BJT CE transistor • Hybrid-π model of a BJT CE transistor • Ebers Moll model of a BJT CB transistor • Gummel Poon model of a BJT CB
shown in fig.1.1(a) can be constructed as shown in fig.2.1(a) can be constructed as shown in fig.3.1(a) can be constructed as transistor shown in fig.4.1(a) can be
shown in fig.1.1(b). shown in fig.2.1(b). shown in fig.3.1(b). constructed as shown in fig.4.1(b).

1.3).What is h ybrid (or)“h” 2.3).What is H ybrid-π parameters? 3.3).What is Ebers Moll parameters? 4.3).What is Gummel Poon
parameters? parameters?
• The various parameters shown in • The various parameters shown in • The various parameters shown in • The various parameters shown in
fig.1.1(b) are called hybrid parameters or fig.2.1(b) are called hybrid-πparameters. fig.3.1(b) are called Ebers Moll fig.4.1(b) are called Gummel Poon
h parameters. They are They are parameters. They are parameters. They are
a). Input impedance a). Base and emitter resistor and a). Emitter-base junction current IDE a). Emitter-base junction current Ibe
b). output admittance b). Transconductance b). Collector-base junction current IDC b). Collector-base junction current Ibc
c). Forward current gain and c). Forward current gain αF c). Forward current gain βF
d). Reverse voltage gain d). Reverse current gain αR d). Reverse current gain βR

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1.4).What is circuit connection of 2.4).What is circuit connection of 3.4).What is circuit connection of 4.4).What is circuit connection of
fig.1.1(b)? fig.2.1(b)? fig.3.1(b)? fig.4.1(b)?
• Fig.1.1(b) shows that, • Fig.2.1(b) shows that, • Fig.3.1(b) shows that, • Fig.4.1(b) shows that,
• Base and emitter is connected through a • Base and emitter is connected through a • Base and emitter is connected through a • Base and emitter is connected through a
resistor series with voltage source resistor . base-emitter junction diode base-emitter junction diode
. parallel with current source .
.
• Collector and emitter is connection • Collector and emitter is connection • Base and collector is connected through • Base and collector is connected through
through a resistor parallel with through a current source . a base-collector junction diode a base-collector junction diode
current source . parallel with current source .
.
• Collector and emitter is connection
through a current source
.
1.5).What is h ybrid (or)“h” 2.5).What is H ybrid-π parameters 3.5).What is Ebers Moll parameters 4.5).What is Gummel Poon
parameters equations? equations? equations? parameters equations?
• equation can be expressed as • equation can be expressed as • equation can be expressed as • equation can be expressed as

• equation can be expressed as • equation can be expressed as • equation can be expressed as • equation can be expressed as

• equation can be expressed as • Where, “Q” denotes Q point, thermal • Where, • Where,
voltage , “k” is Boltzmann’s is emitter current and is emitter current and
is collector current. is collector current.
constant , “q” is charge on an electron,
“T” is transistor temparature in kelvin.

• equation can be expressed as • equation can be expressed as • equation can be expressed as

• Where denotes “change in” • equation can be expressed as • equation can be expressed as

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 Important Question8: Draw and express various small signal CE,CC and CB transistor hybrid models(each 8 marks) Answer:

Note:
• In DC analysis symbols used are capital letters with its suffix also capital letters. Example, , , etc.
• In AC or small signal analysis symbols used are capital letters with its suffix also small letters. Example, , , etc.
• In the letter - denotes input impedance, - denotes output admittance, - denotes forward current gain, - denotes reverse voltage gain

1).NPN -CB configuration 2).NPN-CE configuration 3).NPN-CC configuration

1.1).What is NPN -CB configuration? 2.1).What is NPN -CE configuration? 3.1).What is NPN -CC configuration?
• It is shown in fig.1.1 given below. • It is shown in fig.2.1 given below. • It is shown in fig.3.1 given below.

E C C E
B B

B E C
Figure 1.1 Figure 2.1 Figure 3.1

1.2).What is NPN –CB h ybrid model? 2.2).What is NPN –CE h ybrid model? 3.2).What is NPN –CC h ybrid model?
• It is shown in fig.1.2 given below. • It is shown in fig.2.2 given below. • It is shown in fig.3.2 given below.
BJT CB Transistor’s Hybrid model BJT CE Transistor’s Hybrid model BJT CC Transistor’s Hybrid model

E C C B C E B E
E C
B B

B
E C
equivalent to B equivalent to E equivalent to C
Figure 1.1(a) Figure 1.1(b) Figure 2.2(a) Figure 2.2(b) Figure 3.2(a) Figure 3.2(b)

1.3).What is NPN –CB h ybrid model 2.3).What is NPN –CE h ybrid model 3.3).What is NPN –CC h ybrid model
equation? equation? equation?
• It is given below. • It is given below. • It is given below.

1.4).What is NPN –CB h ybrid model 2.4).What is NPN –CE h ybrid model 3.4).What is NPN –CC h ybrid model
equation in matrix form? equation in matrix form? equation in matrix form?
• It is given below. • It is given below. • It is given below.

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Important Question9: What are transistor current equations? Compare current equations and its relationship of CE, CB and CC configurations.(8 marks) Answer:

1.Common base (CB) configuration 2.Common emitter (CE) configuration 3.Common collector (CC) configuration

• and are flowing in opposite direction • and are flowing in opposite direction • and are flowing in opposite direction

• What is CB current gain ? • What is CE current gain ? • What is CC current gain ?

• Relationship between and • Relationship between and • Relationship between , and

Important Question10: Compare main characteristics or properties of CE, CB and CC configurations.(8 marks) Answer:

characteristics or properties 1.Common base (CB) configuration 2.Common emitter (CE) configuration 3.Common collector (CC) configuration

Input resistance Low (about 100 Ω) Moderate (about 750 Ω) High (about 750 kΩ))
Output resistance High (about 450kΩ) Moderate (about 45kΩ) Low (about 25Ω)
Current gain 1 or unity High High
Voltage gain About 150 About 500 Less that 1
Phase shift between input and output
voltages Input ac Input ac Input ac
signal signal signal

Output ac Output ac Output ac

signal signal signal

o
No phase shift between input and output 180 phase shift between input and output No phase shift between input and output
Main Applications It is used in high frequency circuits It is used in audio frequency circuits It is used in impedance matching circuits

11).What is Earl y effect? 12).What is transistor Knee voltage?

• In a common base configuration, an • The "knee voltage" can be defined as the
increase in collector voltage increases voltage at which conduction starts i.e., input
the depletion region width at the current increases.
output junction diode. • Figure1 shows letter “A” denotes knee voltage
of CE configuration.
• This action makes the effective base
width w to decrease. This is known as VCE =1V
IB VCE =2V
early effect or base width modulation.
• Due to this effect the recombination rate
reduces at base region and charge A A
gradient is increased within the base. VBE
Figure 1

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13).What is and w hat are breakdow n 14).Explain briefl y about Multi 15).Explain one of applications such 16).Explain one of application such
voltages of a transistor?.Answ er: emitter transistor .Answ er as transistor act an amplifier? as transistor act as a switch?

13.1).What is breakdow n voltages? 14.1).What is Multi emitter 15.1).What is transistor act an 16.1).What is transistor act a
transistor? amplifier? sw itch?
• An upper limit of the maximum allowable • A BJT transistor can be designed with • Using transistor, applied input weak • Using transistor, applied input signal
collector junction voltage is called more than one emitter terminals which signal voltage can be amplified into voltage can be switched into output
transistor breakdown voltage. are shown in figure given below. output large signal voltage. signal voltage.
• After this breakdown voltage, the • This type of transistor is called multi • Thus, a transistor acts as an amplifier. • Thus, a transistor acts as a switch.
transistor output current increasing emitter transistor.
rapidly. This process is called transistor
breakdown.
13.2).What is uses of finding these 14.2).What is uses of multi emitter 15.2).What is uses of transistor act 16.2).What is uses of transistor act a
breakdow n voltages? transistor? an amplifier? sw itch?
• This breakdown voltages are used to • Multi emitter transistors are used in • Transistor amplifier circuits can be used • Transistor switching circuits can be used
choose VCE at which transistor is many electronic circuits such as two to amplify signals in many tele- to switching the signals in many tele-
working without damage. input TTL NAND gate and etc. communication circuits. communication circuits.
13.2).What are t ypes of breakdow n 14.3).What is s ymbol of Multi emitter 15.3).What is its Circuit diagram? 16.3).What is its Circuit diagram?
voltages? transistor?
• They are two types • It is shown in fig.14.1 • It is shown in fig.15.1. • It is shown in fig.15.1.
a). Avalanche multiplication or Avalanche
B IE IC IC
break down
b). Reach-through or punch- through
C RS RL
E1 +
13.3).What is Avalanche E2 Vin IB RL output
multiplication or Avalanche
VCE Vi
break dow n? VBE VCC
• The figure13.1 shows various avalanche 14.4).What is basic structure of Multi -
breakdown voltages of CE output emitter transistor?
Figure 15.1 Figure 16.1
characteristics. • It is shown in fig.14.2
IC IB2
B
15.3).What is Construction in
16.4).What is Construction in fig.16.2?
IB1 fig.15.1?
E1 C • A basic circuit for a transistor used as a
N P N • A basic circuit for a transistor used as
E2 switch can be constructed as shown in
an amplifier can be constructed as
fig.16.1.
shown in fig.15.1.
IB=0 Figure 14.2 • Fig.16.1 consists of
• This circuit consists of
1. NPN transistor
BVCEO BVCBO VCE 14.5).What is construction of 1. NPN transistor
2. Battery voltage sources VCC.
Figure 13.1 fig.14.2? 2. Variable voltage sources VBE and VCE.
3. AC signal voltage source Vi
• A basic structure of a multi emitter 3. AC signal voltage source Vin
4. Resistance RL
transistor can be constructed as shown 4. Resistance RL
• Figure13.1 shows that two avalanche 5. Resistance RS
in fig.14.2 15.4).What is connection in fig.16.1?
breakdown voltages named as BVCEO • This Fig.14.2 consists of 15.4).What is connection in fig.15.1?
• Fig16.1 connection are
and BVCBO. 1. Emitter1 terminal E1 • A basic circuit for a transistor used as
• Where an amplifier can be connected as shown • Voltage source VCC is connected
2. Emitter2 terminal E2 between Emitter and Collector . It keeps
• BVCEO is breakdown voltage between 3. Collector terminal C in fig.15.1.
emitter collator junction under reverse
collector to emitter junction when base is 4. Base terminal B • Fig.15.1 shows that
bias.
open. • voltage source VBE is connected between
• AC signal voltage source Vi is connected
Emitter and Base. It keeps emitter base
to base through a current limiting
junction under forward bias.
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• BVCBO is breakdown voltage between
collector to base junction when emitter is
open.
• As a result of this breakdown voltages,
new electron hole pair is created.
• Thus each new carrier may produce
additional carriers through the collision
• and action of distributing bonds.
• This commutative process is knows as
avalanche multiplication or avalanche
breakdown.
• Avalanche multiplication factor M is
expressed by
• Relationship between BVCEO and BVCBO is
expressed as
13.4).reach-through or punch-
through
• It is another type of breakdown that
arises due to the increased width of
collector-base junction depletion region
with increased collector-base junction
voltage (early effect).
resistance RS.
14.6).What is important application • Voltage source VCE is connected • Resistance RL is connected in series
of multi emitter transistor? between Collector and Base. It keeps with voltage sources VCC.
• Multi emitter transistors are used in collector base junction under reverse 15.5).What is operation in fig.16.1?
many electronic circuits such as two bias. • When voltage source Vi makes
input TTL NAND gate which is shown in • AC signal voltage source Vin is transistor operating in saturation region,
fig.14.3. connected in series with voltage sources transistor carry heavy current flow IC.
VCC VBE. Hence transistor is considered as ON
• Resistance RL is connected in series with state.
voltage sources VCE. When voltage source Vi makes transistor
R1 15.5).What is operation in fig.15.1? operating in cut-off region, transistor
RL • A change of signal voltage Vin produces carry no current flow. Hence transistor is
a change in emitter current. considered as OFF state.
• This change in emitter current makes • It shows that a transistor should be
Q1 output operated in saturation and cut off
E1 change in collector current due to
transistor action. regions to use it as a switch.
E2
Q2 • This change in collector current, makes a
large voltage across the load
resistance RL
• So the weak signal voltage Vin applied
is amplified and it is taken across RL as
large signal voltage . Thus, a transistor
acts as an amplifier.
• Both input ac signal and amplified output
ac signals of this circuit in fig.15.1 is
shown in fig.15.2.
Input ac
signal
Output ac
signal
Example:
• Let the collector load resistance RL:
10kΩ.
• Assume that a change of 0.2V in signal
voltage produces a change of 2mA in
emitter current.
• Due to transistor action, the change in
collector current would also be
approximately 2mA.
• So the voltage developed across the
load resistance = 10kΩ x 2 mA = 20V.
• Thus a change of 0.2V in the input
signal has caused a change of 20V in
the output circuit.
• In other words, the transistor is able to raise
the voltage level of the signal from 0.2V to
20V.
• Hence this shows that a transistor can be as
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 an amplifier.

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