Ex. No.

9
Date : 23-12-2020
Circuit Diagram
Bipolar Junction Transistor Characteristics using Pspice
VCE
1k AIM
IC To study the input and output characteristics of an NPN transistor in Common
VBE Emitter mode Configuration.
Collector
100k Input characteristics: Plot VBE Vs IB, for different VCE and determine the input
IB
Q2N2222 dynamic resistance in each case at suitable operating points.
Base Output characteristics: Plot VCE Vs IC, for different IB and determine the
Emitter output dynamic resistance in each case at suitable operating points in the active
+ + region.
OV _ VBE IE OV _ VCE
APPARATUS REQUIRED

Sl. No Components / Part Value / Type Keyword

1. DC Supply Variable Vdc
2. Voltage and current marker -- --
3. Resistors R 100k
R 1k
4. Transistor NPN Q2N2222

Theory
A Bipolar Junction Transistor, or BJT is a three terminal device having two PN-
junctions connected together in series. Each terminal is given a name to identify
it and these are known as the Emitter (E), Base (B) and Collector (C). There are
two basic types of bipolar transistor construction, NPN and PNP, which
basically describes the physical arrangement of the P-type and N-type
semiconductor materials from which they are made. Bipolar Transistors are
"CURRENT" Amplifying or current regulating devices that control the amount
of current flowing through them in proportion to the amount of biasing current
applied to their base terminal. The principle of operation of the two transistor
types NPN and PNP, is exactly the same the only difference being in the biasing
(base current) and the polarity of the power supply for each type.

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Input Characteristics
Input characteristics: Plot VBE Vs IB, for different VCE and
determine the input dynamic resistance in each case at suitable
operating points.
Output Characteristics
Output characteristics: Plot VCE Vs IC, for different IB and
determine the output dynamic resistance in each case at suitable
operating points in the active region.
Page 3
Transistor Configurations and Characteristics: There are three possible
configurations possible when a transistor is connected in a circuit: (a) Common
base, (b) Common emitter (c) Common collector. We will be focusing on the
Common emitter configurations in this experiment. The behaviour of a
transistor can be represented by d.c. current-voltage (I-V) curves, called the
static characteristic curves of the device. The three important characteristics of
a transistor are: (i) Input characteristics, (ii) Output characteristics and (iii)
Transfer Characteristics. These characteristics give information about various
transistor parameters, e.g. input and out dynamic resistance, current
amplification PNP NPN factors, etc.
Common Emitter Transistor Characteristics
In a common emitter configuration, emitter is common to both input and
output as shown in its circuit diagram.
Input Characteristics: The variation of the base current IB with the base-
emitter voltage VBE keeping the collector-emitter voltage VCE fixed, gives
the input characteristic in CE mode.
Input Dynamic Resistance (ri): This is defined as the ratio of change in base
emitter voltage (ΔVBE) to the resulting change in base current (ΔIB) at
constant collector-emitter voltage (VCE). This is dynamic and it can be seen
from the input characteristic, its value varies with the operating current in the
transistor. The value of ri can be anything from a few hundreds to a few
thousand
Formulaohms.
Output Characteristics: The variation of the collector current IC with the
collector-emitter voltage VCE is called the output characteristic. The plot of IC
versus VCE for different fixed values of IB gives one output characteristic.
Since the collector current changes with the base current, there will be different
output characteristics corresponding to different values of IB.
Output Dynamic Resistance (ro): This is defined as the ratio of change in
collector-emitter voltage (Δ VCE) to the change in collector current (Δ IC) at a
constant base current IB. The high magnitude of the output resistance (of the
order of 100 kW) is due to the reverse biased state of this diode.
Formula
Page 4
DATA Sheet

Page 5
 Circuit Diagram
VCE
1k

IC
VBE
IB 100k
Q2N2222

+ +
OV _ VBE IE OV _ VCE

Input Characteristics Output Characteristics

Plot VBE Vs IB, for different Plot VCE Vs IC, for different IB
VCE and determine the input and determine the output
dynamic resistance in each dynamic resistance in each case
case at suitable operating at suitable operating points in the
points. active region.

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 PROCEDURE
1. Create the given circuit diagram in new project file using the general
procedure.
2. Replace the default component and source values as per given circuit
diagram.
Input Characteristics
1. Select the probe by typing VCC in the TOP place part search box and
connect as in the circuit diagram and rename it accordingly
2. Create New Simulation Profile and select DC Sweep / Primary
Sweep/ Voltage source
3. Give the Name: VBE
4. Give the start value 0 and end value as 5 with increment rates as 1 and
press OK.
5. Select Secondary Sweep/ Voltage source
6. Give the Name: VCE
7. Give the start value 0 and end value as 30 with increment rates as 5
and press OK.
8. Run the simulation and open the output schematic output (black
empty screen will be visible).
9. Add Traces select IB(Q1) and press OK
10. Click plot and do the following;
 Axis Setting
 Axis Variable
 Select V(VBE) and press OK.

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 Output Characteristics

1. Edit Simulation Profile and select DC Sweep / Primary Sweep/

Voltage source
2. Give the Name: VCE
3. Give the start value 0 and end value as 30 with increment rates as 1
and press OK.
4. Select Secondary Sweep/ Voltage source
5. Give the Name: VCE
6. Give the start value 0 and end value as 5 with increment rates as 1 and
press OK.
7. Run the simulation and open the output schematic output (black
empty screen will be visible).
8. Add Traces select IC(Q1) and press OK
9. Click plot and do the following;
 Axis Setting
 Axis Variable
 Select V(VCE) and press OK.

RESULT
Thus the input and output characteristics of an NPN transistor in Common
Emitter mode is studied using pspice simulation.
Input characteristics: VBE Vs IB, for different VCE and determine the input
dynamic resistance in each case at suitable operating points.
Output characteristics: VCE Vs IC, for different IB and determine the output
dynamic resistance in each case at suitable operating points in the active region.

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PRIMARY SWEEP:
SECONDARY SWEEP: