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Aon6414a PDF
Aon6414a PDF
DFN5X6 D
Top View
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1 8
2 7
3 6
4 5
G
PIN1 S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 17 21 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 44 53 °C/W
Maximum Junction-to-Case Steady-State RθJC 3.4 4 °C/W
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
140 100
10V 6V VDS=5V
120 5V
7V 80
100
4.5V
80 60
ID (A)
ID(A)
4V
60
40
40
3.5V
20 125°C
20 25°C
VGS=3V
0 0
0 1 2 3 4 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
12 1.8
VGS=10V
Normalized On-Resistance
10 ID=20A
1.6
VGS=4.5V
Ω)
RDS(ON) (mΩ
8 1.4
17
VGS=4.5V
5
6 1.2 ID=20A 2
VGS=10V 10
4 1
2 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A) Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)
18
25 1.0E+02
ID=20A
1.0E+01
20
40
1.0E+00
125°C
Ω)
15 25°C
RDS(ON) (mΩ
1.0E-01
IS (A)
125°C
1.0E-02
10
1.0E-03
5
1.0E-04
25°C
0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 1600
VDS=15V
ID=20A 1400
8 Ciss
1200
Capacitance (pF)
1000
VGS (Volts)
6
800
4 600
400
2 Coss
200
Crss
0 0
0 5 10 15 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
1000.0 200
TJ(Max)=150°C
100.0 10µs 10µs 160 TC=25°C
RDS(ON)
limited 100µs
Power (W)
ID (Amps)
10.0 120 17
1ms
5
DC 10ms
1.0 80 2
10
0.1 TJ(Max)=150°C 40
TC=25°C
0.0
0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18Junction-to-
Figure 10: Single Pulse Power Rating
Operating Area (Note F) Case (Note F)
10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance
1 RθJC=4°C/W 40
0.1
Single Pulse PD
0.01
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
70 35
TA=25°C
IAR (A) Peak Avalanche Current
60 30
40 TA=100°C 20
30 15
20 10
TA=125°C 5
10
0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150
Time in avalanche, tA (s) °C)
TCASE (°
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)
40 10000
TA=25°C
30 1000
Current rating ID(A)
17
Power (W)
100
5
20
2
10
10 10
0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
°C)
TCASE (° Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance
1 RθJA=53°C/W 40
0.1
PD
0.01
Single Pulse Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
t on toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds