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TC654/TC655
– Note
VOTF
VIN – VDD
+
OTF
+
Control
+ VOUT
Logic
–
Start-up
Timer FAULT
CF
Missing
VMIN Pulse
Clock Detect
Generator
50 k
SENSE1
SCLK –
Serial Port
Interface 100 mV (typ.)
SDA
50 k
SENSE2
–
GND
100 mV (typ.)
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, all limits are specified for VDD = 3.0V to 5.5V,
-40°C <TA < +85°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Supply Voltage VDD 3.0 — 5.5 V
Operating Supply Current IDD — 150 300 µA Pins 7, 8, 9 Open
Shutdown Mode Supply Current IDDSHDN — 5 10 µA Pins 7, 8, 9 Open
VOUT PWM Output
VOUT Rise Time tR — — 50 µsec IOH = 5 mA, Note 1
VOUT Fall Time tF — — 50 µsec IOL = 1 mA, Note 1
Sink Current at VOUT Output IOL 1.0 — — mA VOL = 10% of VDD
Source Current at VOUT Output IOH 5.0 — — mA VOH = 80% of VDD
PWM Frequency F 26 30 34 Hz CF = 1 µF
VIN Input
VIN Input Voltage for 100% PWM VC(MAX) 2.45 2.6 2.75 V
duty-cycle
VC(MAX) - VC(MIN) VCRANGE 1.25 1.4 1.55 V
VIN Input Resistance — 10M — VDD = 5.0V
VIN Input Leakage Current IIN -1.0 — +1.0 µA
SENSE Input
SENSE Input Threshold Voltage with VTHSENSE 80 100 120 mV
Respect to GND
FAULT Output
FAULT Output LOW Voltage VOL — — 0.3 V IOL = 2.5 mA
FAULT Output Response Time tFAULT — 2.4 — sec
Fan RPM-to-Digital Output
Fan RPM ERROR -15 — +15 % RPM > 1600
Note 1: Not production tested, ensured by design, tested during characterization.
2: For 5.0V > VDD 5.5V, the limit for VIH = 2.2V.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, all parameters apply at VDD = 3.0 V to 5.5 V
Parameters Symbol Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range TA -40 — +85 °C
Operating Temperature Range TA -40 — +125 °C
Storage Temperature Range TA -65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 10 Pin MSOP JA — 113 — °C/W
TIMING SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, all limits are specified for VDD = 3.0V to 5.5V,
-40°C <TA < +85°C
Parameters Sym Min Typ Max Units Conditions
SMBus Interface (See Figure 1-1)
Serial Port Frequency fSC 0 — 100 kHz Note 1
Low Clock Period tLOW 4.7 — — µsec Note 1
High Clock Period tHIGH 4.7 — — µsec Note 1
SCLK and SDA Rise Time tR — — 1000 nsec Note 1
SCLK and SDA Fall Time tF — — 300 nsec Note 1
Start Condition Setup Time tSU(START) 4.7 — — µsec Note 1
SCLK Clock Period Time tSC 10 — — µsec Note 1
Start Condition Hold Time tH(START) 4.0 — — µsec Note 1
Data in SetupTime to SCLK tSU-DATA 250 — — nsec Note 1
High
Data in Hold Time after SCLK tH-DATA 300 — — nsec Note 1
Low
Stop Condition Setup Time tSU(STOP) 4.0 — — µsec Note 1
Bus Free Time Prior to New tIDLE 4.7 — µsec Note 1 and Note 2
Transition
Note 1: Not production tested, ensured by design, tested during characterization.
2: Time the bus must be free before a new transmission can start.
A B C D E F G H I J K L M
tLOW tHIGH
SCLK
SDA
A = Start Condition F = Acknowledge Bit Clocked into Master J = Acknowledge Clocked into Master
B = MSB of Address Clocked into Slave G = MSB of Data Clocked into Slave K = Acknowledge Clock Pulse
C = LSB of Address Clocked into Slave H = LSB of Data Clocked into Slave L = Stop Condition, Data Executed by Slave
D = R/W Bit Clocked into Slave I = Slave Pulls SDA Line Low M = New Start Condition
E = Slave Pulls SDA Line Low
A B C D E F G H I J K
tLOW tHIGH
SCLK
SDA
A = Start Condition E = Slave Pulls SDA Line Low I = Acknowledge Clock Pulse
B = MSB of Address Clocked into Slave F = Acknowledge Bit Clocked into Master J = Stop Condition
C = LSB of Address Clocked into Slave G = MSB of Data Clocked into Master K = New Start Condition
D = R/W Bit Clocked into Slave H = LSB of Data Clocked into Master
180 14
Pins 7,8, and 9 Open VDD = 5.5 V VOL = 0.1 VDD
175
12
170
155 8
150 VDD = 5.0 V
6
145
140 VDD = 4.0 V
4
135 VDD = 3.0 V
130 2
-40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125
FIGURE 2-1: IDD vs. Temperature. FIGURE 2-4: PWM, Sink Current vs.
Temperature.
9.000 50
IOL = 2.5 mA
8.000 45
Shutdown I DD (µA)
VDD = 3.0 V
7.000
Fault V OL (mV)
40
6.000 VDD = 5.5 V
35
5.000
30
4.000 VDD = 5.0 V
VDD = 3.0 V
3.000 25
VDD = 4.0 V VDD = 5.5 V
2.000 20
1.000 15
-40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (ºC) Temperature (ºC)
FIGURE 2-2: IDD Shutdown vs. FIGURE 2-5: Fault VOL vs. Temperature.
Temperature.
32
CF = 1.0 µF
PWM Frequency (Hz)
35 31
VOH = 0.8VDD
Source Current (mA)
30 VDD = 5.5 V
30
25 VDD = 5.5 V
29 VDD = 3.0 V
20
VDD = 5.0 V
15 VDD = 4.0 V 28
10 VDD = 3.0 V
27
5 -40 -25 -10 5 20 35 50 65 80 95 110 125
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (ºC)
Temperature (°C)
FIGURE 2-6: PWM Frequency vs.
FIGURE 2-3: PWM, Source Current vs. Temperature.
Temperature.
50 10
CF = 1.0 µF
VOL = 0.4 V 9
45 8
40 VDD = 5.5 V
6
35 VDD = 5.0 V 5
VDD = 3.0 V
4
30
3
VDD = 3.0 V 1
VDD = 5.5 V
20 0
-40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125
FIGURE 2-7: SDA IOL vs. Temperature. FIGURE 2-10: RPM %error vs.
Temperature.
2.620 45
2.615 VDD = 5.5 V
2.605
VCMax (V)
35
2.600 VDD = 5.0 V VDD = 3.0V
2.595
30
2.590 VDD = 4.0 V
2.585 VDD = 5.5V
25
2.580 VDD = 3.0 V
2.575 20
-40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (ºC) Temperature (ºC)
1.205 150
SDA & SCLK Hysteresis (mV)
1.195
VDD = 5.5 V VDD = 5.0 V 120
100
1.185 VDD = 4.0 V
90
1.180 80
-40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (ºC) Temperature (ºC)
FIGURE 2-9: VCMIN vs. Temperature. FIGURE 2-12: SDA, SCLK Hysteresis vs.
Temperature.
Name Function
VIN Analog Input
CF Analog Output
SCLK Serial Clock Input
SDA Serial Data In/Out (Open Drain)
GND Ground
FAULT Digital (Open Drain) Output
SENSE2 Analog Input
SENSE1 Analog Input
VOUT Digital Output
VDD Power Supply Input
3.3 SMBus Serial Clock Input (SCLK) 3.8 Digital Output (VOUT)
Clocks data into and out of the TC654/TC655. See This active high complimentary output drives the base
Section 5.0 “Serial Communication” for more infor- of an external transistor or the gate of a MOSFET.
mation on the serial interface.
3.9 Power Supply Input (VDD)
3.4 Serial Data (Bi-directional) (SDA)
The VDD pin with respect to GND provides power to the
Serial data is transferred on the SMBus in both direc- device. This bias supply voltage may be independent of
tions using this pin. See Section 5.0 “Serial Commu- the fan power supply.
nication” for more information on the serial interface.
+12V +5V
C2 RISO1
1 µF
R1 NTC Thermistor
34.8 k 100 k @ 25°C 715
10 RISO2
1 9
VIN VDD VOUT
C1 715
R2 0.01 µF CSENSE1
14.7 k 8
SENSE1
2
CF 0.1 µF
CF RSENSE1
1.0 µF
TC654/TC655 CSENSE2
RSCLK +5V SENSE2 7
20 k 3 0.1 µF
SCLK RSENSE2
+5V
PIC® +5V RFAULT
Microcontroller 6 20 k
4 SDA FAULT
GND
5
RSDA
20 k
4.2 PWM Fan Speed Control By modulating the voltage applied to the gate of the
MOSFET Qdrive, the voltage applied to the fan is also
The TC654 and TC655 devices implement PWM fan modulated. When the VOUT pulse is high, the gate of
speed control by varying the duty cycle of a fixed fre- the MOSFET is turned on, pulling the voltage at the
quency pulse train. The duty cycle of a waveform is the drain of Qdrive to 0V. This places the full 12V across
on time divided by the total period of the pulse. For the fan for the Ton period of the pulse. When the duty
example, given a 100 Hz waveform (10 msec.) with an cycle of the drive pulse is 100% (full on, Ton = T), the
on time of 5.0 msec, the duty cycle of this waveform is fan will run at full speed. As the duty cycle is decreased
50% (5.0 msec/10.0 msec). An example of this is (pulse on time “Ton” is lowered), the fan will slow down
illustrated in Figure 4-2. proportionally. With the TC654 and TC655 devices, the
duty cycle can be controlled through the analog input
pin (VIN) or through the SMBus interface by using the
Duty-Cycle Register. See Section 4.5 “Duty Cycle
Control (VIN and Duty-Cycle Register)” for more
details on duty cycle control.
70
Power-Up or Release 60
from SHDN
50
40
One Second Pulse 30
20
10
0
YES 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8
Select SMBus
Input Voltage (VIN)
NO
Default PWM: 39.33% SMBus PWM Duty
Cycle Control FIGURE 4-5: PWM Duty Cycle vs. VIN
Voltage (Typical).
VIN Open?
YES For the TC655 device, if the voltage at VIN exceeds the
NO 2.6V (typical) level, an over-temperature fault indica-
VIN PWM Duty
tion will be given by asserting a low at the FAULT output
Cycle Control and setting OTF (bit 5<X>) in the Status Register to a
‘1’.
A thermistor network or any other voltage output ther-
FIGURE 4-4: Power-Up Flow Chart.
mal sensor can be used to provide the voltage to the
VIN input. The voltage supplied to the VIN pin can actu-
4.4 PWM Drive Frequency (CF)
ally be thought of as a temperature. For example, the
As previously discussed, the TC654 and TC655 circuit shown in Figure 4-6 represents a typical solution
devices operate with a fixed PWM frequency. The fre- for a thermistor based temperature sensing network.
quency of the PWM drive output (VOUT) is set by a See Section 7.3 “Temperature Sensor Design” for
capacitor at the CF pin. With a 1 µF capacitor at the CF more details.
pin, the typical drive frequency is 30 Hz. This frequency
can be raised, by decreasing the capacitor value, or
lowered, by increasing the capacitor value. The rela-
tionship between the capacitor value and the PWM fre-
6.1 RPM-OUTPUT1 & RPM-OUTPUT2 the RPM information in 50 RPM (8-bit) or 25 RPM (9-
Registers (RPM1 & RPM2) bit) increments. This is selected via RES (bit 6<0>) in
the Configuration Register, with ‘0’ = 50 RPM and
As discussed in Section 4.7 “Sensing Fan Operation ‘1’ = 25 RPM. The default state is zero (50 RPM). The
(SENSE1 & SENSE2)”, fan current pulses are detected maximum fan RPM value that can be read is
at the SENSE1 and SENSE2 inputs of the TC654/ 12775 RPM. If this value is exceeded, R2CO (bit 4<0>)
TC655 device. The current pulse information is used to and R1CO (bit 3<0>) in the Status Register will be set to
calculate the fan RPM. The fan RPM data for fans 1 and a '1' to indicate that a counter overflow of the respective
2 is then written to registers RPM1 and RPM2, respec- RPM register has occurred. Register 6-1 shows the
tively. RPM1 and RPM2 are 9-bit registers that provide RPM output register 9-bit format.
Legend:
R = Readable bit W = Writable bit U = Unimplemented bit, read as ‘0’
-n = Value at POR ’1’ = Bit is set ’0’ = Bit is cleared x = Bit is unknown
Legend:
R = Readable bit W = Writable bit U = Unimplemented bit, read as ‘0’
-n = Value at POR ’1’ = Bit is set ’0’ = Bit is cleared x = Bit is unknown
TC654/TC655
VDD Fan Speed
Controller
TCN75
TC654/TC655 Temperature
Microcontroller
R R Sensor
SDA
PIC®
SCLK
FIGURE 7-2: Multiple Devices on SMBus.
age divider circuit. Rt is a conventional NTC thermistor, 120000 VIN Voltage 3.500
R1 and R2 are standard resistors. R1 and Rt form a par- 100000
3.000
allel resistor combination that will be referred to as 2.500
VIN (V)
80000
RTEMP (RTEMP = R1 * Rt/ R1 + Rt). As the temperature 2.000
increases, the value of Rt decreases and the value of 60000
1.500
RTEMP will decrease with it. Accordingly, the voltage at NTC Thermistor
40000
100K @ 25ºC 1.000
VIN increases as temperature increases, giving the 20000 0.500
desired relationship for the VIN input. The purpose of RTEMP
0 0.000
R1 is to help linearize the response of the sensing net-
20
30
40
50
60
70
80
90
There are many values that can be chosen for the NTC Temperature (ºC)
thermistor. There are also thermistors which have a lin-
ear resistance instead of logarithmic, which can help to FIGURE 7-4: How Thermistor Resistance,
eliminate R1. If less current draw from VDD is desired, VIN, And RTEMP Vary With Temperature.
then a larger value thermistor should be chosen. The Figure 7-4 graphs three parameters versus tempera-
voltage at the VIN pin can also be generated by a volt- ture. They are Rt, R1 in parallel with Rt, and VIN. As
age output temperature sensor device. The key is to described earlier, you can see that the thermistor has a
get the desired VIN voltage to system (or component) logarithmic resistance variation. When put in parallel
temperature relationship. with R1, though, the combined resistance becomes
The following equations apply to the circuit in more linear, which is the desired effect. This gives us
Figure 7-3. the linear looking curve for VIN.
FAN FAN
1 2
RISO1
715
RISO2
VOUT
715
SENSE1
CSENSE1
RSENSE1
(0.1 µF typical)
SENSE2
CSENSE2
RSENSE2
(0.1 µF typical)
VDD VDD
FAN
FAN
RBASE
VOUT Q1 Q1
VOUT
RSENSE RSENSE
GND GND
FAN
EQUATION
60 1000
Time for one revolution (msec.) = ------------------------
Fan RPM
Q1
The fan current can now be monitored over this time
VOUT period. The number of pulses occurring in this time
period is the fan's "Current Pulses per Rotation" rating
which is needed in order to accurately read fan RPM.
RSENSE Example: The full-speed fan RPM rating is 8200 RPM.
From this, the time for one fan revolution is calculated
to be 7.3 msec, using the previously discussed equa-
tion. Using a current probe, the fan current can be mon-
GND itored as the fan is operating at full speed. Figure 7-9
shows the fan current pulses for this example. The
Q1- N-Channel MOSFET
7.44 msec window, marked by the cursors, is very near
the 7.3 msec calculated above, and is within the toler-
FIGURE 7-8: Clamp Diode For Fan Turn- ance of the fan ratings. Four current pulses occur within
Off. this 7.44 msec time frame. Given this information,
F2PPR (bits 4-3<01>) and F1PPR (bits 2-1<01>) in the
7.6 Bias Supply Bypassing and Noise Configuration Register, should be set to '10' to indicate
Filtering 4 current pulses per revolution.
The bias supply (VDD) for the TC654/TC655 devices
should be bypassed with a 1 µF ceramic capacitor. This
capacitor will help supply the peak currents that are
required to drive the base/gate of the external fan drive
devices.
As the VIN pin controls the duty cycle in a linear fashion,
any noise on this pin can cause duty cycle jittering. For
this reason, the VIN pin should be bypassed with a
0.01 µF capacitor.
In order to keep fan noise off of the TC654/TC655
device ground, individual ground returns for the TC654/
TC655 and the low side of the fan current sense resis-
tor should be used.
FAN FAN
1 2
RISO1
CSLOW1
(0.1uF
typical)
Sense Pin Voltage RISO2
"Extra Pulse" VOUT
CSLOW2
SENSE1 (0.1 µF typical)
CSENSE
TC654/ (0.1 µF typical) RSENSE1
TC655
VOUT PWM
SENSE2
CSENSE2
GND (0.1 µF typical) RSENSE2
TC654E
135256
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be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
UN
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
UN
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Revision A (2002)
• Original Release of this Document.
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