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    A silicon photodiode has a quantum efficiency of 80% at 0.9 μm wavelength. When receiving 0.5 μW incident power, it outputs 11 μA current after avalanche gain. The multiplication factor of the photodiode under these conditions can be determined from these values. A silicon p-i-n photodiode has an intrinsic region 20 μm wide and 500 μm in diameter. Given the electron drift velocity and material permittivity, the (a) drift time across the depletion region and (b) junction capacitance can be calculated.

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    A silicon photodiode has a quantum efficiency of 80% at 0.9 μm wavelength. When receiving 0.5 μW incident power, it outputs 11 μA current after avalanche gain. The multiplication factor of the photodiode under these conditions can be determined from these values. A silicon p-i-n photodiode has an intrinsic region 20 μm wide and 500 μm in diameter. Given the electron drift velocity and material permittivity, the (a) drift time across the depletion region and (b) junction capacitance can be calculated.

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    20 views1 page

    Silicon Fiber

    Uploaded by

    Sanjay
    A silicon photodiode has a quantum efficiency of 80% at 0.9 μm wavelength. When receiving 0.5 μW incident power, it outputs 11 μA current after avalanche gain. The multiplication factor of the photodiode under these conditions can be determined from these values. A silicon p-i-n photodiode has an intrinsic region 20 μm wide and 500 μm in diameter. Given the electron drift velocity and material permittivity, the (a) drift time across the depletion region and (b) junction capacitance can be calculated.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
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    The quantum efficiency of a particular silicon RAPD is 80% for the detection of radiation at a

    wavelength of 0.9 μm. When the incident optical power is 0.5 μW, the output current from the device
    (after avalanche gain) is 11 μA. Determine the multiplication factor of the photodiode under these
    conditions.

    A silicon p–i–n photodiode has an intrinsic region with a width of 20 μm and a diameter of 500 μm in
    which the drift velocity of electrons is 10 5 m s-1. When the permittivity of the device material is
    10.5×10-13 F cm−1, calculate: (a) the drift time of the carriers across the depletion region; (b) the
    junction capacitance of the photodiode.

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