NTMFS4925N

MOSFET – Power, Single,

N-Channel, SO-8 FL
30 V, 48 A
Features
• Low RDS(on) to Minimize Conduction Losses http://onsemi.com
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
V(BR)DSS RDS(ON) MAX ID MAX
• Optimized for 5 V, 12 V Gate Drives
5.6 mW @ 10 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 30 V 48 A
Compliant 8.5 mW @ 4.5 V

Applications
D (5,6)
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit G (4)

Drain−to−Source Voltage VDSS 30 V

Gate−to−Source Voltage VGS ±20 V S (1,2,3)
Continuous Drain TA = 25°C ID 16.7 A N−CHANNEL MOSFET
Current RqJA
(Note 1) TA = 100°C 10.5 MARKING
Power Dissipation TA = 25°C PD 2.70 W DIAGRAM
RqJA (Note 1)
D
Continuous Drain TA = 25°C ID 25.2 A
Current RqJA ≤ 10 s 1 S D
TA = 100°C 15.9 S 4925N
(Note 1) SO−8 FLAT LEAD
S AYWZZ
Power Dissipation TA = 25°C PD 6.16 W CASE 488AA
RqJA ≤ 10 s (Note 1) STYLE 1 G D
Steady
State D
Continuous Drain TA = 25°C ID 9.7 A
Current RqJA
(Note 2) TA = 100°C 6.2 A = Assembly Location
Y = Year
Power Dissipation TA = 25°C PD 0.92 W
W = Work Week
RqJA (Note 2)
ZZ = Lot Traceability
Continuous Drain TC = 25°C ID 48 A
Current RqJC
(Note 1) TC =100°C 30
Power Dissipation TC = 25°C PD 23.2 W
ORDERING INFORMATION
RqJC (Note 1)
Pulsed Drain TA = 25°C, tp = 10 ms, IDM 210 A Device Package Shipping†
Current VGS = 10 V
NTMFS4925NT1G SO−8 FL 1500 /
Current Limited by Package TA = 25°C IDmax 100 A (Pb−Free) Tape & Reel
Operating Junction and Storage TJ, −55 to °C
Temperature TSTG +150 NTMFS4925NT3G SO−8 FL 5000 /
(Pb−Free) Tape & Reel
Source Current (Body Diode) IS 21 A
Drain to Source DV/DT dV/dt 6.0 V/ns †For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

May, 2019− Rev. 6 NTMFS4925N/D
 NTMFS4925N

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Value Unit
Single Pulse Drain−to−Source Avalanche EAS 34 mJ
Energy (TJ = 25°C, VDD = 24 V, VGS = 20 V,
IL = 26 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes TL 260 °C
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 5.4
Junction−to−Ambient – Steady State (Note 3) RqJA 46.3
°C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 136.2
Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 20.3
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V
Drain−to−Source Breakdown Voltage V(BR)DSSt VGS = 0 V, ID(aval) = 11.0 A, 34 V
(transient) Tcase = 25°C, ttransient = 100 ns

Drain−to−Source Breakdown Voltage V(BR)DSS/ 21

mV/°C
Temperature Coefficient TJ
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1.0
VDS = 24 V mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.32 1.7 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ VGS = 0 V, VDS = 15 V 3.9 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 4.5 5.6
ID = 15 A 4.5
mW
VGS = 4.5 V ID = 30 A 6.8 8.5
ID = 15 A 6.7
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 52 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS 1264
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 15 V 483 pF
Reverse Transfer Capacitance CRSS 143
Capacitance Ratio CRSS / VGS = 0 V, f = 1 MHz, VDS = 15 V 0.113 0.226
CISS

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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 NTMFS4925N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Total Gate Charge QG(TOT) 10.8
Threshold Gate Charge QG(TH) 2.0
VGS = 4.5 V, VDS = 15 V; ID = 30 A nC
Gate−to−Source Charge QGS 3.8
Gate−to−Drain Charge QGD 4.2
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 21.5 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(ON) 9.5
Rise Time tr VGS = 4.5 V, VDS = 15 V, 32.7
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 16.4
Fall Time tf 6.2
Turn−On Delay Time td(ON) 7.4
Rise Time tr VGS = 10 V, VDS = 15 V, 27.5
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 20.3
Fall Time tf 4.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.86 1.1
V
IS = 30 A TJ = 125°C 0.75
Reverse Recovery Time tRR 25.8
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 12.4 ns
Discharge Time tb IS = 30 A 13.4
Reverse Recovery Charge QRR 13.6 nC
PACKAGE PARASITIC VALUES
Source Inductance LS 1.00 nH
Drain Inductance LD 0.005 nH
TA = 25°C
Gate Inductance LG 1.84 nH
Gate Resistance RG 0.8 2.2 W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.

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 NTMFS4925N

TYPICAL CHARACTERISTICS

120 120
10 V 4.5 V TJ = 25°C TJ = −55°C
110 4.0 V 110
100 100
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

TJ = 25°C TJ = 125°C
90 90
80 80
3.5 V
70 70 VDS = 10 V
60 60
50 50
40 3.0 V 40
30 30
20 20
10 VGS = 2.5 V 10
0 0
0 1 2 3 4 5 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.020 0.011
0.018 ID = 30 A 0.010 T = 25°C
0.016
0.009
0.014
0.012 0.008 VGS = 4.5 V

0.010 0.007
0.008
0.006
0.006
0.005 VGS = 10 V
0.004
0.002 0.004
0 0.003
3 4 5 6 7 8 9 10 10 20 30 40 50 60 70 80 90 100 110 120
VGS (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage

1.7 10,000
1.6 ID = 30 A TJ = 150°C
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

1.5 VGS = 10 V
IDSS, LEAKAGE (nA)

1.4
1,000 TJ = 125°C
1.3
1.2
1.1
1.0 100 TJ = 85°C
0.9
0.8
0.7 VGS = 0 V
0.6 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage

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 NTMFS4925N

TYPICAL CHARACTERISTICS

1600 11

VGS, GATE−TO−SOURCE VOLTAGE (V)

QT
TJ = 25°C 10
1400 Ciss
VGS = 0 V 9
C, CAPACITANCE (pF)

1200 8
1000 7
6
800 Coss 5
600 4 Qgs Qgd TJ = 25°C

400 3
2 VGS = 10 V
Crss
200 VDD = 15 V
1 ID = 30 A
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 22
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

1000 30
VGS = 0 V
25
IS, SOURCE CURRENT (A)
VGS = 10 V
VDD = 15 V td(off)
100 ID = 15 A tf 20
t, TIME (ns)

tr
15

10 td(on) 10
TJ = 125°C TJ = 25°C
5

1 0
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance

1000 40
SOURCE AVALANCHE ENERGY (mJ)

0 V < VGS < 10 V 36 ID = 26 A

EAS, SINGLE PULSE DRAIN−TO−

Single Pulse
100 TC = 25°C 32
ID, DRAIN CURRENT (A)

10 ms 28
10 100 ms 24

1 ms 20
1 10 ms 16
12
RDS(on) Limit
0.1 Thermal Limit dc 8
Package Limit 4
0.01 0
0.01 0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature

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 NTMFS4925N

TYPICAL CHARACTERISTICS

100
D = 0.5
0.2
10
0.1
0.05
(°C/W)

0.02
1
r(t)

0.01

0.1
SINGLE PULSE

0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t, TIME (s)
Figure 13. Thermal Response

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 NTMFS4925N

PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)
CASE 488AA
ISSUE G
2X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B BURRS.
2X
D1 MILLIMETERS
0.20 C DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
4X b 0.33 0.41 0.51
E1 q c 0.23 0.28 0.33
E D 5.15 BSC
2 D1 4.50 4.90 5.10
c D2 3.50 −−− 4.22
A1 E 6.15 BSC
E1 5.50 5.80 6.10
1 2 3 4 E2 3.45 −−− 4.30
e 1.27 BSC
TOP VIEW G 0.51 0.61 0.71
3X C K 1.20 1.35 1.50
L 0.51 0.61 0.71
e SEATING
L1 0.05 0.17 0.20
0.10 C PLANE
M 3.00 3.40 3.80
A DETAIL A q 0_ −−− 12 _

0.10 C STYLE 1:
PIN 1. SOURCE
SIDE VIEW 2. SOURCE
DETAIL A SOLDERING FOOTPRINT* 3. SOURCE
4. GATE
3X 4X 5. DRAIN
8X b 1.270 0.750
4X
0.10 C A B 1.000
0.05 c L e/2
1 4
0.965
K
1.330 2X
0.905
2X
E2
PIN 5 M 0.495 4.530
(EXPOSED PAD) L1
3.200
0.475

G D2
2X
BOTTOM VIEW 1.530
4.560

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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