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Difference Between Power and Small Signal Diode
Difference Between Power and Small Signal Diode
Power diode consists of three layers. Top layer is a heavily doped P+ layer. Middle layer is lightly
doped n– layer and the last layer is a heavily doped n+ layer.
The heavily doped p+ layer act as an anode. The thickness of this layer is around 10 μm and
doping level is 1019 cm-3.
Middle layer of lightly doped n – is known as a drift layer. The thickness of the drift layer
depends on the required breakdown voltage. The breakdown voltage increases with an
increase in the width of the drift layer. Resistivity of this layer is high because of the low
level of doping.
The operating principle of power diode is same as the conventional PN junction diode. A
diode conducts when the anode voltage is higher than the cathode voltage. The forward
voltage drop across the diode is very low around 0.5V to 1.2V.
I-V characteristic of Power Diode:
The I-V characteristic of power diode is as shown in the figure. The forward current
increase linearly with an increase in forward voltage.
A very small amount of leakage current flows in the reverse bias (blocking mode). The
leakage current is independent of the applied reverse voltage. The leakage current
flows due to the minority charge carriers. When the reverse voltage reaches the reverse
breakdown voltage, avalanche breakdown occurs.
In the case of reverse breakdown, As the voltage and current of the diode are large, the
power dissipation is dangerously high and it can destroy the device.
The power diodes depending on the reverse recovery time as well as the process of
manufacturing are classified into three types such as
The arrow always points in the direction of conventional current flow through the diode meaning
that the diode will only conduct if a positive supply is connected to the Anode, ( a ) terminal and
a negative supply is connected to the Cathode ( k ) terminal thus only allowing current to flow
through it in one direction only, acting more like a one way electrical valve, ( Forward Biased
Condition ).
However, we know from the previous tutorial that if we connect the external energy source in the
other direction the diode will block any current flowing through it and instead will act like an
open switch, ( Reversed Biased Condition ) as shown below.
1. Televisions
2. Radios
1N4973
1N4148
1N34A (Germanium Diode)
1N4454