Journal of Physics and Chemistry of Solids 136 (2020) 109124

Contents lists available at ScienceDirect

Journal of Physics and Chemistry of Solids

journal homepage: www.elsevier.com/locate/jpcs

Growing dendritic SiC on 1D SiC nanowire: Enhancement of electromagnetic T

wave absorption performance
Xiaolin Lana, Zechao Qiua, Bing Yana, Yongjun Xua, Zhanwei Caob, Xiaochen Zhangb, Zifa Chenb,
Zhijiang Wanga,*
a
MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of
Technology, Harbin, 150001, China
b
Science and Technology on Space Physics Laboratory, Beijing, 100076, China

A R T I C LE I N FO A B S T R A C T

Keywords: Dendritic nanomaterial exhibits a unique structure and an excellent performance. Silicon carbide (SiC) nano-
SiC nanowires wires with dendritic structure were synthesized for the first time by using facile methods that combine elec-
Dendritic structure troless plating Fe with carbon thermal reduction. The dendritic SiC nanowires show an improved microwave
Dielectric property absorption performance compared with their linear counterparts. The maximum reflection loss (RL) of these
Microwave absorption performance
nanowires reaches −51.5 dB at a frequency of 10.3 GHz and an effective EM wave absorption band
(RL ≤ −10 dB) covering the frequency range of 9–12.5 GHz at a thickness of 2.04 mm. The interfacial polar-
ization and multiple Debye dielectric polarization relaxation process induced by the dendritic structure of these
nanowires play important roles in the microwave absorbing procedure. The results highlight the potential of
fabricated dendritic SiC nanowires as efficient electromagnetic wave absorption materials.

1. Introduction
Rationally manipulating the microstructure of materials is among
the most effective methods for developing distinctive attributes [1] that
can be used in diverse applications, including catalysis [2–4], sensors
[5], medicines [6], biotechnology [7], and electromagnetic (EM) wave
absorption [8].
Among various morphologies, dendritic structures can provide fa-
vorable centers for hot spots due to their abundant interface [9]. Pre-
vious studies on the microstructure of materials have developed a new
platform for validating the outstanding EM wave absorption perfor-
mance of dendritic nanostructures [8,10]. For instance, Li et al. [11]
reported that dendritic ZnO with four nanostructured branches can
improve the microwave absorption property of the carbon nanotubes/
ZnO/epoxy resin composite and attributed this finding to the multi-
interfaces formed between the CNTs and branch-like ZnO. Yu et al. [8]
constructed a dendritic α–Fe via the electrochemical reduction method
and found that this material has a high microwave absorption and
broad absorption band due to electrical charge polarization. Moreover,
dendritic absorbing materials also include dendritic alloys, such as
branch-like NiCu alloys [12]. These materials also exhibit a high mi-
crowave absorption given their unique dendritic structure. However,
metals, alloys, and oxides are subject to some harsh conditions.
In order to acquire the requirements of strong absorption intensities,
broad frequency bandwidth, thinness, and lightness of weight of EM
wave absorbers, recent studies have shown that one-dimensional
semiconductor materials including short carbon fiber [13], carbon na-
notubes [14] and SiC fiber [15] have been fabricated. As an important
wide bandgap semiconductor, silicon carbide (SiC) has an excellent
microwave absorption property and a good resistance against acid, high
temperatures, and oxidation [1,15–18]. Previous studies on SiC-based
microwave absorption materials have focused on nanoparticles [19–21]
One-dimensional (1D) nanowires [22–25] and core shells [26,27]
Moreover, SiC nanowires has a growth direction along the [111] crystal
face of the cubic phase β-SiC, thereby a straight line nanowires forms
[19]. However, the relatively low permittivity in the imaginary part of
1D-straight line SiC nanowires can't reveal suitable effective EA band-
width (RL (≤−10 dB) [28]. With the development of EM wave ab-
sorbing materials, various strategies have been explored to enhance EM
wave absorbing performance of SiC nanowires, including hybridizing
SiC nanowires with magnetic materials, doping SiC nanowires, reg-
ulating defect structure and manipulating the microstructure. Manip-
ulating SiC nanowires with the dendritic microstructure has been rarely
examined in the literature given the lack of an effective and

*
Corresponding author.
E-mail address: wangzhijiang@hit.edu.cn (Z. Wang).

https://doi.org/10.1016/j.jpcs.2019.109124
Received 28 June 2019; Received in revised form 25 July 2019; Accepted 1 August 2019
Available online 01 August 2019
0022-3697/ © 2019 Elsevier Ltd. All rights reserved.
X. Lan, et al.
Fig. 1. Schematic of the dendritic SiC nanowire fabrication process.
controllable method for fabricating its nanomaterials. Synthesizing
dendritic SiC and decoding the mechanism behind such structure are
imperative in absorbing or attenuating the EM wave.
Because of the above reasons, herein, this paper is the first to pre-
pare dendritic SiC nanowires by using a facile and economical method.
Glucose and silica sol were used as raw materials and were deposited
along with Fe onto SiC nanowires via electroless painting. Fe was used
as the catalyst for promoting the growth of new SiC on the surface of
the former SiC nanowires under high temperature. The influence of the
branch-like structure of dendritic SiC on the absorption performance of
this material was also explored while considering its morphology, EM
parameter, and reflection loss (RL).
2. Experimental section
2.1. Materials
The silica sol solution was supplied by the Qingdao-Maike Chemical
Company. All chemicals were of analytical grade and were purchased
from Sinopharm Chemical Reagent Co. Ltd., China.
2.2. Synthesis of linear SiC nanowires
48.15 g anhydrous glucose was slowly added into a 107.00 g silica
sol solution at room temperature, while a strong mechanical agitation
produced by a stirring paddle was conducted in the entire dissolution
process. The obtained transparent sol solution was placed in a drying
oven for 48 h at 80 °C to form solid blocks. These solid blocks were then
pyrolyzed at 800 °C for 3 h under a protective flow of N2 (with a flowing
rate of 10 ml min−1 to 20 ml min−1). The heat in the sintering furnace
was increased to 800 °C at a rate of 5 °C min−1. After completing the
pyrolysis process, a black precursor comprising carbon and SiO2 was
milled for 1 h. The sample was eventually transferred into a corundum
crucible covered by a carbon cloth and sintered at 1500 °C under a
protective flow of argon (10 L h−1) for 3 h in the sintering furnace.
2.3. Synthesis of dendritic SiC nanowires
Fluffy and green SiC nanowires were obtained in step 2.2 and were
etched in the diluted solution of HF (50 ml/L). These nanowires were
then sensitized and activated in the mixed solution which main con-
tents include HCl (60 ml/L), SnCl2 (25 g/L), PdCl2 (0.5 g/L), and NaCl
(160 g/L). The pH value of the electroless plating solution was adjusted
to pH 12 by sodium hydroxide. Fe2+ (provided by 20 g/L FeSO4) was
reduced by NaBH4 (2.5 g/L) and C4H4O6KNa·4H2O (84 g/L) and was
2
Journal of Physics and Chemistry of Solids 136 (2020) 109124
then deposited on the surface of the SiC nanowires. Afterward, the SiC
nanowires treated with the electroless plating solution were placed on a
piece of carbon cloth that covered a corundum crucible containing a
mixture of carbon black, silicon, and silica powders in a ratio of 4:1:1
by mole, which was placed in the corundum tube. All materials reacted
in argon along with temperature and pressure at 1500 °C for 2 h. The
SiC nanowires were then etched with HCl to remove the catalyst par-
ticles.
2.4. Phase characterization and performance investigation
The structure of the materials was tested by using an X-ray dif-
fraction (XRD) equipment (Empyrean) with Cu Kα radiation
(λ = 0.1541 nm). Transmission electron microscope (TEM) and high-
resolution TEM (HRTEM) were studied by a JEM2100F operated at
2000 keV. Their morphologies were investigated by using a scanning
electronic microscope (SEM, Supra 55), and the complex permittivity
and dielectric loss were measured on a vector network analyzer
(Agilent, N5230A) with a frequency ranging from 2 GHz to 18 GHz by
way of coaxial transmission. The samples were prepared by mixing the
SiC nanowires with melted paraffin wax in a mass ratio of 2:3 and were
then placed in a special mold that was pressed to form a ring with 3 mm
height, 7 mm external diameter, and 3 mm internal diameter. The mi-
crowave absorption performance was calculated according to the
transmission line theory [29] and formulated as follows:
Zin = Z0
μr
εr (
tanh j
2πfd
c
μr εr ) (2-1)
Zin − Z0
RL ( dB) = 20 log Zin + Z0
(2-2)
In formulation (2-1), Zin and Z0 represent the impedance of the
absorber and air, respectively, μr and εr represent the relative complex
permeability and permittivity of the absorber, respectively, f is the
frequency, d is the thickness of the sample, and c is the velocity of EM
wave in the free space. Meanwhile, RL in formulation (2-2) represents
the reflection loss.
3. Results and discussion
3.1. Structure and morphology
Fig. 1 schematically illustrates the experimental process of synthe-
sizing dendritic SiC nanowires. These nanowires were produced by
using anhydrous glucose and silica sol as raw materials and by
X. Lan, et al.
Fig. 2. XRD pattern of the linear and dendritic SiC nanowires.
performing carbonization, carbothermal reduction, electroless plating,
and sintering with the mixture of the carbon and silicon sources. The
transparent sol solution turned black during the carbonization. The
carbonaceous silica sol reacted at 1500 °C to obtain the green fluffy SiC.
After electroless plating, Fe was deposited on the surface of the SiC
nanowires. Fe acts as the catalyst of the growth of dendritic SiC na-
nowires. The dendritic SiC nanowires were eventually obtained by
etching them with HCl to remove the catalyst Fe particles.
The XRD pattern of the prepared product in the bottom of the
crucible of section 2.2 shows five broad peaks at 2θ = 35.6°, 41.4°,
60.0°, 71.8°, and 75.5°, which correspond to the (111), (200), (220),
(311), and (222) planes of 3C–SiC (β-SiC JCPDS 29-1129), respectively
(Fig. 2). This XRD pattern also confirms that the fluffy and green pro-
duct is β-SiC. The peak at 2θ = 33.7° corresponds to the stacking fault
that occurred during the growing process of SiC nanowires, whereas the
broad peak at about 2θ = 21.6° can be ascribed to amorphous SiO2
[30]. The following reactions may take place:
C (s) + SiO2 (s) = SiO (g) + CO (g)
3C (s) + SiO2 (s) = SiC (s) + 2CO (g)
C (s) + SiO (g) = SiC (s) + CO (s)
SiO (g) + CO (g) = SiC (s) + CO2 (g)
The reactions (3-1) and (3-2) produce the most important inter-
mediate products, namely, SiO(g) and CO(g), whereas reactions (3-3)
and (3-4) play important roles in the growth of SiC nanowires [31]. At
elevated temperatures, the following reaction may take place:
SiO g+ CO2 (g) = SiO2 (s) + CO (g)
which can explain why the green SiC nanowires contain SiO2 [32]. The
crystal type of the dendritic SiC nanowires was invariable compared
with the linear SiC nanowires in the spectrum of peak position and peak
width. SiO2 was involved in the formation of SiC and resulted in the
disappearance of the amorphous peak. The I33.6°/I41.4° confirms the
presence of stacking faults within the SiC nanowires [33]. The stacking
faults of the dendritic SiC nanowires have a density of 0.37, while the
quantity of these faults exhibit a significant reduction when compared
with those of linear SiC nanowires (I33.6°/I41.4° = 0.65). Sintering at
high temperatures can produce additional energy and subsequently
promote the rearrangement of atoms that reduce the stacking faults in
the dendritic SiC nanowires [23].
The morphologies of the reaction product in different procedures
are presented in Fig. 3, with Fig. 3a and b showing the raw materials in
the bottom of the crucible after the experiment in section 2.2. The black
carbon–silica composite was mainly converted into linear SiC
Journal of Physics and Chemistry of Solids 136 (2020) 109124
nanowires. Obviously, the product comprises linear nanowires with
diameters of about 100 nm–300 nm and a length of about several tens of
microns. These nanowires have a uniform diameter, which may be as-
cribed to their stable growth rate. Fig. 3c and d, and S1 demonstrate
SEM images of the dendritic SiC nanowires. The red circles indicate that
the branches successfully grow on the SiC nanowires. Unlike the trunk
of the SiC nanowires, the branch shows a gradual attenuation in its
diameter from its root to its apex (Fig. 3c and d, and Fig. S1) as a result
of different growing mechanisms. Different from the raw materials
(mainly C and SiO2) in the bottom of the crucible, the carbon cloth does
not contain any silicon. Linear SiC nanowires were produced on the
carbon cloth in Section 2.2, indicating that reaction (3-4) and (3-5) play
an important role in the reaction [34], and such growth process can be
explained by the vapor–solid mechanism [18,35]. Fig. 3c and d reveal
that by using the depositing Fe catalysts on the surface of the SiC na-
nowires, carbon and silicon atoms were dissolved in the Fe drop at
elevated temperatures and formed alloys. Following the reaction of
carbon and silicon atoms, the SiC cores grew into branches when more
carbon and silicon were produced by the diffusion of CO and SiO
(which, in turn, are produced in reactions (3-1) to (3-3)). These results
further demonstrate that the growth of SiC branches can be explained
by the vapor–liquid–solid mechanism [22,36,37].
To obtain further investigations on microstructure about the den-
dritic SiC nanowires, typical TEM images were presented in Fig. 4. The
1D SiC and generated SiC branches can be clearly visible in Fig. 4a and
b. The typical diameter of generated SiC branch is 60–100 mm. Two
types of microscopic morphologies of tapering diameters and bulbous
tips could be seen between SiC branches, which correlate well with SEM
images. Compared with the insert TEM image of Fig. 4c (TEM image of
1D SiC), black lines and shaded regions faded away in the SiC branch of
Fig. 4b, which are attributed to the reduced density of stacking fault in
the SiC domains. Based on the ternary vapor–liquid–solid mechanism of
generated SiC branches, liquid phase catalyst are beneficial for the well-
organized growth of crystals [37]. HRTEM images are presented in
Fig. 4c and d. Both 1D SiC and SiC branch are composed with a lattice
spacing of 0.25 nm, corresponding to the (111) plane of cubic β-SiC
structure. The TEM images obtained are in favor of the above XRD and
(3-1) SEM analysis and confirming the speculation on the reaction me-
chanism.
(3-2)
3.2. Microwave absorption performance
(3-3)
(3-4) The microwave absorption performance of the linear and dendritic
SiC nanowires was calculated by measuring the complex permittivity (ε
= ε′- jε′′) with the frequency ranging from 2 GHz to 18 GHz. The real
(ε′) and imaginary parts (ε′′) represent the storage ability and con-
sumption capability of the electric energies, respectively [23,38]. Fig. 5
illustrates real and imaginary parts of permittivity of the linear and
dendritic SiC nanowires in the frequency range of 2 GHz–18 GHz. In
(3-5)
Fig. 5a, the ε′ value of the linear SiC nanowire ranges between 6.4 and
9.7, while that of the dendritic SiC nanowire ranges from 12.4 to 20.3.
This figure also shows a declining tendency in ε′ versus frequency
(2 GHz–18 GHz). At a frequency range of 6 GHz–8 GHz, the ε′ of the
dendritic SiC nanowire shows a resonance peak, which demonstrates a
declining trend afterward. Meanwhile, at a frequency range of
10 GHz–13 GHz, another resonance peak appears followed by an abrupt
elevation. As shown in Fig. 5b, the ε′′ of the linear SiC nanowires in-
creasingly varies along with frequency at four resonance peaks ranging
from 8 GHz to 18 GHz. After modified with dendrites, many resonance
peaks show obvious and forceful fluctuations at around 6.5, 9.5, 13, and
17 GHz. The ε′′ could be regarded as the complex contributions of both
relaxation and conductance. According to Debye theory, the origin of
the dielectric response of dendritic SiC nanowires mainly originated
from the interfacial polarization relaxation [39]. A significant amount
of interfacial dipoles is accumulated in the branch/trunk of the nano-
wire interfaces, thereby generating charge unbalance that oppose the
3
X. Lan, et al.
Fig. 3. SEM images of the linear SiC nanowires. (a) Low magnification; and (b) high magnification; SEM images of the dendritic SiC nanowires. (c) Low magnifi-
cation; and (d) high magnification.
applied EM field and induce energy dissipation. The ε′′ value of the
dendritic SiC is much higher than that of the linear SiC from about
2 GHz to 10 GHz and from 14 GHz to 18 GHz. For the dielectric mate-
rials, a higher ε′′ means a better microwave absorption performance
based on the premise of impedance matching [31].
According to Debye theory, when a dielectric polarization relaxa-
tion exists, the relationship of ε′ and ε′′ can be expressed as [3,25,40]
εs + ε∞ 2 εs − ε∞ 2
(ε ′ − 2 ) + (ε′′)2 = ( 2 )
where εs is the static permittivity and ε∞ is the relative complex per-
mittivity under the limit of the high frequency. The curves of the Co-
le–Cole semicircle (ε′′ versus ε′) of the linear and dendritic SiC nano-
wires are presented in Fig. 5c and d. Generally, each semicircle
Fig. 4. TEM images of the dendritic SiC nanowires. (a), (b) Representative morphology, (c), (d) typical HRTEM image.
Journal of Physics and Chemistry of Solids 136 (2020) 109124
confirms a Debye relaxation process [40]. The semicircle is nearly
nonexistent in the Cole–Cole curves of the linear SiC nanowires, but
three semicircles can be seen in the Cole–Cole curve of the dendritic SiC
nanowires. Therefore, the dielectric relaxation processes of the den-
dritic SiC nanowires outnumber those of the linear SiC nanowires when
these nanowires are placed in the applied EM field. Debye relaxation
plays a vital role in the microwave absorbing process [40]. For the
dendritic SiC nanowires, the growth points of the branches change the
charge density at the interface of the SiC nanowires and form new
(3-6) polarization centers under the applied EM field, thereby resulting in an
additional polarization relaxation [41–44] that improves the micro-
wave absorption performance. During the relaxation, surface dangling
bonds can easily prevent relaxation and reconstruction [45] and the
degree of band energy dispersion decreases with the increase of the
4
X. Lan, et al. Journal of Physics and Chemistry of Solids 136 (2020) 109124

Fig. 5. Real (a) and imaginary parts (b) of permittivity of the linear and dendritic SiC nanowires. Cole–Cole curves of the linear (c) and dendritic (d) SiC nanowires.

diameter [46]. Their conductivity of dendritic SiC nanowires leads to a
substantial decrease due to the effect of reduced surface suspension
bonds and the band dispersion [47].
To compare the microwave absorption properties of the linear and
dendritic SiC nanowires, RL is calculated according to formulations (2-
1) and (2-2). The 3D RL mapping plots of the linear and dendritic SiC
nanowires with varying frequencies and thicknesses are presented in
Fig. 6. The maximum RL for the linear SiC nanowires is −23 dB at a
frequency of 18 GHz and thickness of 4.5 mm. Meanwhile, a substantial
enhancement of EM wave absorption performance of the dendritic SiC
nanowires is achieved. Specifically, the maximum RL of these nano-
wires increases to −51.5 dB at a frequency of 10.3 GHz and effective EA
bandwidth (≤−10 dB) of 3.5 GHz at the thickness of 2.04 mm
(9–12.5 GHz) as shown in Fig. 6d. Meanwhile, Fig. 5b shows that the
imaginary part of permittivity greatly contributes to the value of the
maximum RL.
Table 1 lists the EM wave absorption performance of some reported
SiC nanowires in the literature. Compared with previously reported SiC
nanowires, dendritic SiC nanowires in this work demonstrate superior
EM wave absorption performance (wider effective absorption coverage

Fig. 6. Microwave absorption of the linear (a) and dendritic (b) SiC nanowires with frequencies ranging from 2 GHz to 18 GHz and thicknesses ranging from 0.5 mm
to 5 mm; Reflection loss with different thickness of the linear (c) and dendritic (d) SiC nanowires.

5
X. Lan, et al.
Table 1
EM wave absorption properties of some representative SiC materials.
Samples Minimum RL Frequency range Frequency coverage
(−dB) (RL < −10 dB) (RL < −10 dB)
SiC NWs 1 21.5 6.0–8.4 2.4
SiC NWs 2 17.4 9.7–12.2 2.5
SiC/SiO2 NWs nanowires 22.4 9–12 3 2
SiC NWs 3 45.98 3.8–5 1.2
SiC sheets 22 13–18 5 2.2
Dendritic SiC 51.5 9–12.5 3.5
with decreased thickness) over the previous reported SiC absorbers.
Dendritic SiC nanowires reveal promising EM wave absorption prop-
erties for practical applications.
We further propose a mechanism to explain the enhanced EM wave
attenuation of dendritic SiC nanowires. The superior EM wave ab-
sorption abilities can be ascribed to two points. First, the introduction
of SiC branches on the trunk nanowires increases the interfacial po-
larization to attenuate EM wave energy [52]. A significant amount of
charges is accumulated in the branch/trunk of the nanowire interfaces,
thereby generating an abundant amount of interfacial dipoles that op-
pose the applied EM field and induce energy dissipation [53]. Second,
the multiple Debye polarization relaxation processes driven by the
dendritic structure of the branch-like SiC nanowires can also lead to the
superior EM wave absorption ability of dendritic SiC nanowires. By
loading the branches on trunk SiC nanowires, the charge density
changes at the conjunctions and form new polarization centers under
the applied EM field, thereby leading to an additional polarization re-
laxation. Dendritic SiC nanowires realize promoting effects between
branch and trunk nanowires as well as generate interfacial polarization
and polarization relaxation to enhance EM wave attenuation, demon-
strating a synergy effect on electromagnetic energy conversion [54].
The tailored low-dimensional dendritic SiC is beneficial for controlling
EM response and energy conversions. Therefore, the EM energy is
converted to heat energy [55], which could further promote energy
conversion.
4. Conclusions
Dendritic SiC nanowires are synthesized based on linear SiC nano-
wires by combining electroless plating with carbon thermal reduction.
The dendritic structure of these nanowires improved their interfacial
polarization and multiple Debye dielectric polarization relaxation pro-
cesses, thereby leading to their superior EM wave absorption abilities.
The maximum RL of the dendritic SiC nanowires is −51.5 dB at a fre-
quency of 10.3 GHz and a thickness of 2.04 mm. An effective absorption
range of 3.5 GHz with RL value under −10 dB can be achieved at op-
timized state. Our findings offer an important reference for the devel-
opment of dendritic materials and provide a guideline for constructing
high-performance EM absorbers.
Notes
The authors declare no competing financial interest.
Acknowledgements
The authors acknowledge financial support from the National
Natural Science Foundation of China (No. 51572062).
Appendix A. Supplementary data
Supplementary data to this article can be found online at https://
doi.org/10.1016/j.jpcs.2019.109124.
6
Journal of Physics and Chemistry of Solids 136 (2020) 109124
Thickness (mm) Percentage (wt%) Matrix Ref.
2 30 Silicone [48]
3.0 30 Silicone [49]
30 Paraffin [50]
4 30 Paraffin [51]
50 Paraffin [52]
2.04 40 Paraffin This work
References
[1] X. Xu, Q. Zhang, M. Hao, Y. Hu, Z. Lin, L. Peng, T. Wang, X. Ren, C. Wang, Z. Zhao,
C. Wan, H. Fei, L. Wang, J. Zhu, H. Sun, W. Chen, T. Du, B. Deng, G. Cheng,
I. Shakir, C. Dames, T. Fisher, X. Zhang, H. Li, Y. Huang, X. Duan, Double-negative-
indexceramic aerogels for thermal superinsulation, Science 363 (2019) 723–727.
[2] K. Kim, T. Lee, Y. Kwon, Y. Seo, J. Song, J.K. Park, H. Lee, J.Y. Park, H. Ihee,
S.J. Cho, R. Ryoo, Lanthanum-catalysed synthesis of microporous 3D graphene-like
carbons in a zeolite template, Nature 535 (2016) 131–135.
[3] K. Sun, T. Cheng, L. Wu, Y. Hu, J. Zhou, A. Maclennan, Z. Jiang, Y. Gao,
W.A. Goddard 3rd, Z. Wang, Ultrahigh mass activity for carbon dioxide reduction
enabled by gold-iron core-shell nanoparticles, J. Am. Chem. Soc. 139 (2017)
15608–15611.
[4] Z. Wang, L. Wu, K. Sun, T. Chen, Z. Jiang, T. Cheng, W.A. Goddard 3rd, Surface
ligand promotion of carbon dioxide reduction through stabilizing chemisorbed re-
active intermediates, J. Phys. Chem. Lett. 9 (2018) 3057–3061.
[5] Y. Bae, P.V. Pikhitsa, H. Cho, M. Choi, Multifurcation assembly of charged aerosols
and its application to 3D structured gas sensors, Adv. Mater. 29 (2017) 1604159.
[6] S. Rani, T. Ritter, The exosome-a naturally secreted nanoparticle and its application
to wound healing, Adv. Mater. 28 (2016) 5542–5552.
[7] M. Ashjaran, M. Babazadeh, A. Akbarzadeh, S. Davaran, R. Salehi, Stimuli-re-
sponsive polyvinylpyrrolidone-NIPPAm-lysine graphene oxide nano-hybrid as an
anticancer drug delivery on MCF7 cell line, Artif. Cells Nanomed. Biotechnol. 47
(2019) 443–454.
[8] Z. Yu, Z. Yao, N. Zhang, Z. Wang, C. Li, X. Han, X. Wu, Z. Jiang, Electric field-
induced synthesis of dendritic nanostructured α-Fe for electromagnetic absorption
application, J. Mater. Chem. 1 (2013) 4571.
[9] C. Jin, Z.D. He, Y.T. Zhao, Y.F. Pan, W.H. Wu, X.J. Wang, G.X. Tong, Controllable
synthesis, formation mechanism, and enhanced microwave absorption of dendritic
AgFe alloy/Fe3O4 nanocomposites, CrystEngComm 20 (2018) 1997.
[10] Z. Yu, N. Zhang, Z. Yao, X. Han, Z. Jiang, Synthesis of hierarchical dendritic micro-
nano structure CoxFe1−x alloy with tunable electromagnetic absorption perfor-
mance, J. Mater. Chem. 1 (2013) 12462.
[11] H. Li, J. Wang, Y. Huang, X. Yan, J. Qi, J. Liu, Y. Zhang, Microwave absorption
properties of carbon nanotubes and tetrapod-shaped ZnO nanostructures compo-
sites, Mater. Sci. Eng., B 175 (2010) 81–85.
[12] B. Zhao, G. Shao, B. Fan, W. Zhao, R. Zhang, Preparation and electromagnetic wave
absorption properties of novel dendrite-like NiCu alloy composite, RSC Adv. 5
(2015) 42587–42590.
[13] M.S. Cao, W.L. Song, Z.L. Hou, B. Wen, J. Yuan, The effects of temperature and
frequency on the dielectric properties, electromagnetic interference shielding and
microwave-absorption of short carbon fiber/silica composites, Carbon 48 (2010)
788–796.
[14] B. Wen, M.S. Cao, Z.L. Hou, W.L. Song, L. Zhang, M.M. Lu, H.B. Jin, X.Y. Fang,
W.Z. Wang, J. Yuan, Temperature dependent microwave attenuation behavior for
carbon-nanotube/silica composites, Carbon 65 (2013) 124–139.
[15] J.H. Choi, Y.W. Nam, M.S. Jang, C.G. Kim, Characteristics of silicon carbide fiber-
reinforced composite for microwave absorbing structures, Compos. Struct. 202
(2018) 290–295.
[16] J. Chen, X. Liao, M. Wang, Z. Liu, J. Zhang, L. Ding, L. Gao, Y. Li, Highly flexible,
nonflammable and free-standing SiC nanowire paper, Nanoscale 7 (2015)
6374–6379.
[17] X. Shen, G. Yu, Z. Zhang, J. Liu, H. Li, X. Huang, W. Chen, Covalent surface
modification with electron-donating/accepting π-conjugated chains to effectively
tune the electronic and magnetic properties of zigzag SiC nanoribbons, J. Mater.
Chem. C 5 (2017) 2022–2032.
[18] H. Lin, H. Li, Q. Shen, X. Shi, X. Tian, L. Guo, Catalyst-free growth of high purity 3C-
SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction,
Mater. Lett. 212 (2018) 86–89.
[19] W. Xie, X. Zhang, W. Liu, Q. Xie, G. Wen, X. Huang, J. Zhu, F. Ma, Low-temperature
synthesis of SiC nanowires with Ni catalyst, Rare Met. 38 (2019) 206–209.
[20] F. Ye, L.T. Zhang, X.W. Yin, Y.J. Zhang, L. Kong, Y.S. Liu, L.F. Cheng, Dielectric and
microwave-absorption properties of SiC nanoparticle/SiBCN composite ceramics, J.
Eur. Ceram. Soc. 34 (2014) 205–215.
[21] D. Han, H. Mei, S. Xiao, W. Xue, Q. Bai, L. Cheng, CNT/SiC composites produced by
direct matrix infiltration of self-assembled CNT sponges, J. Mater. Sci. 52 (2017)
8401–8411.
[22] R. Wu, G. Yang, M. Gao, B. Li, J. Chen, R. Zhai, Y. Pan, Growth of SiC nanowires
from NiSi solution, Cryst. Growth Des. 9 (2009) 100–104.
[23] H. Zhang, Y. Xu, J. Zhou, J. Jiao, Y. Chen, H. Wang, C. Liu, Z. Jiang, Z. Wang,
X. Lan, et al.
Stacking fault and unoccupied densities of state dependence of electromagnetic
wave absorption in SiC nanowires, J. Mater. Chem. C 3 (2015) 4416–4423.
[24] M. Han, X. Yin, Z. Hou, C. Song, X. Li, L. Zhang, L. Cheng, Flexible and thermostable
graphene/SiC nanowire foam composites with tunable electromagnetic wave ab-
sorption properties, ACS Appl. Mater. Interfaces 9 (2017) 11803–11810.
[25] C. Liang, C. Liu, H. Wang, L. Wu, Z. Jiang, Y. Xu, B. Shen, Z. Wang, SiC–Fe3O4
dielectric–magnetic hybrid nanowires: controllable fabrication, characterization
and electromagnetic wave absorption, J. Mater. Chem. 2 (2014) 16397–16402.
[26] C. Liang, Z. Wang, Controllable fabricating dielectric-dielectric SiC@C core-shell
nanowires for high-performance electromagnetic wave attenuation, ACS Appl.
Mater. Interfaces 9 (2017) 40690–40696.
[27] H. Yang, Q. Wang, L. Wang, Z. Zhang, Y. Li, M. Cao, Improved dielectric properties
and microwave absorbing properties of SiC nanorods/Ni core-shell structure, Funct.
Mater. Lett. 10 (2017).
[28] M.X. Sun, X.L. Lv, A.M. Xie, W.C. Jiang, F. Wu, Growing 3D ZnO nano-crystals on
1D SiC nanowires: enhancement of dielectric properties and excellent electro-
magnetic absorption performance, J. Mater. Chem. C 4 (2016) 8897–8902.
[29] S.S. Kim, S.B. Jo, K.I. Gueon, K.K. Choi, Complex permeability and permittivity and
microwave absorption of ferrite-rubber composite at X-band frequencies, IEEE
Trans. Magn. 27 (1991) 5462–5464.
[30] X. Ou, S. Xu, J.M. Warnett, S.M. Holmes, A. Zaheer, A.A. Garforth, M.A. Williams,
Y. Jiao, X. Fan, Creating hierarchies promptly: microwave-accelerated synthesis of
ZSM-5 zeolites on macrocellular silicon carbide (SiC) foams, Chem. Eng. J. 312
(2017) 1–9.
[31] G. Meng, L. Zhang, Y. Qin, C. Mo, S. Zhang, H. Li, S. Feng, Synthesis of one-di-
mensional nanostructures–β-SiC nanorods with and without amorphous SiO2
wrapping layers, Mater. Trans. 30 (1999) 213–219.
[32] X. Zhang, X. Huang, G. Wen, X. Geng, J. Zhu, T. Zhang, H. Bai, Novel SiOC nano-
composites for high-yield preparation of ultra-large-scale SiC nanowires,
Nanotechnology 21 (2010) 385601.
[33] Z. Dong, J. Meng, H. Zhu, G. Yuan, Y. Cong, J. Zhang, X. Li, A. Westwood, Synthesis
of SiC nanowires via catalyst-free pyrolysis of silicon-containing carbon materials
derived from a hybrid precursor, Ceram. Int. 43 (2017) 11006–11014.
[34] Y. Gao, Y. Bando, K. Kurashima, T. Sato, SiC nanorods prepared from SiO and ac-
tivated carbon, J. Mater. Sci. 37 (2002) 2023–2029.
[35] J. Dai, J. Sha, Z. Zhang, J. Shao, Y. Zu, M. Lei, J. Dai, J. Sha, Z. Zhang, J. Shao,
Catalyst-free growth of multi-shaped SiC nanofibers on carbon fibers at elevated
temperatures, Ceram. Int. 43 (2017) 17057–17063.
[36] R. Wu, Z. Yang, M. Fu, K. Zhou, In-situ growth of SiC nanowire arrays on carbon
fibers and their microwave absorption properties, J. Alloy. Comp. 687 (2016)
833–838.
[37] C.H. Liang, G.W. Meng, L.D. Zhang, Y.C. Wu, Z. Cui, Large-scale synthesis of β-SiC
nanowires by using mesoporous silica embedded with Fe nanoparticles, Chem.
Phys. Lett. 329 (2000) 323–328.
[38] C. Liu, D. Yu, D.W. Kirk, Y. Xu, Porous silicon carbide derived from apple fruit with
high electromagnetic absorption performance, J. Mater. Chem. C 4 (2016)
5349–5356.
[39] H.J. Yang, W.Q. Cao, D.Q. Zhang, T.J. Su, H.L. Shi, W.Z. Wang, J. Yuan, M.S. Cao,
NiO hierarchical nanorings on SiC: enhancing relaxation to tune microwave ab-
sorption at elevated temperature, ACS Appl. Mater. Interfaces 7 (2015) 7073–7077.
Journal of Physics and Chemistry of Solids 136 (2020) 109124
[40] L. Yan, C. Hong, B. Sun, G. Zhao, Y. Cheng, S. Dong, D. Zhang, X. Zhang, In situ
growth of core-sheath heterostructural SiC nanowire arrays on carbon fibers and
enhanced electromagnetic wave absorption performance, ACS Appl. Mater.
Interfaces 9 (2017) 6320–6331.
[41] S. He, G. Wang, C. Lu, J. Liu, B. Wen, H. Liu, L. Guo, M. Cao, Enhanced wave
absorption of nanocomposites based on the synthesized complex symmetrical CuS
nanostructure and poly(vinylidene fluoride), J. Mater. Chem. 1 (2013) 4685–4692.
[42] D. Chen, G. Wang, S. He, J. Liu, L. Guo, M. Cao, Controllable fabrication of mono-
dispersed RGO–hematite nanocomposites and their enhanced wave absorption
properties, J. Mater. Chem. 1 (2013) 5996–6003.
[43] H. Wang, Z. Yan, J. An, J. He, Y. Hou, H. Yu, N. Ma, G. Yu, D. Sun, Iron cobal/
polypyrrole nanoplates with tunable broadband electromagnetic wave absorption,
RSC Adv. 6 (2016) 92152–92158.
[44] Y. Duan, J. Liu, Y. Zhang, T. Wang, First-principles calculations of graphene-based
polyaniline nano-hybrids for insight of electromagnetic properties and electronic
structures, RSC Adv. 6 (2016) 73915–73923.
[45] M. Durandurdu, Electronic and mechanical properties of wurtzite type SiC nano-
wires, Phys. Status Solidi B 243 (2006) R37–R39.
[46] Y.J. Li, S.L. Li, P. Gong, Y.L. Li, M.S. Cao, X.Y. Fang, Discrete impurity band from
surface danging bonds in nitrogen and phosphorus doped SiC nanowires, Phys. E
Low-dimens. Syst. Nanostruct. 98 (2018) 191–196.
[47] Y.J. Li, S.L. Li, P. Gong, Y.L. Li, X.Y. Fang, Y.H. Jia, M.-S. Cao, Effect of surface
dangling bonds on transport properties of phosphorous doped SiC nanowires, Phys.
E Low-dimens. Syst. Nanostruct. 104 (2018) 247–253.
[48] R. Wu, Z. Yang, M. Fu, K. Zhou, In-situ growth of SiC nanowire arrays on carbon
fibers and their microwave absorption properties, J. Alloy. Comp. 687 (2016)
833–838.
[49] R. Wu, K. Zhou, Z. Yang, X. Qian, J. Wei, L. Liu, Y. Huang, L. Kong, L. Wang,
molten-salt-mediated synthesis of SiC nanowires for microwave absorption appli-
cations, CrystEngComm 15 (2013) 570–576.
[50] M. Zhang, J. Zhao, Z.J. Li, S.Q. Ding, Y.Q. Wang, G.H. Qiu, A. Meng, Q.D. Li,
Ultralong SiC/SiO2 nanowires: asimple gram-scale production and their effective
blue-violet photoluminescence and microwave absorption properties, ACS Sustain.
Chem. Eng. 6 (2018) 3596–3603.
[51] L.W. Yan, C.Q. Hong, B.Q. Sun, G.D. Zhao, Y.H. Cheng, S. Dong, D.Y. Zhang,
X.h. Zhang, In situ growth of core–sheath heterostructural SiC nanowire arrays on
carbon fibers and enhanced electromagnetic wave absorption performance, ACS
Appl. Mater. Interfaces 9 (2017) 6320–6331.
[52] X. Lan, C. Liang, M. Wu, N. Wu, L. He, Y. Li, Z. Wang, Facile synthesis of highly
defected silicon carbide sheets for efficient absorption of electromagnetic waves, J.
Phys. Chem. C 122 (2018) 18537–18544.
[53] J. Kuang, W. Cao, Stacking faults induced high dielectric permittivity of SiC wires,
Appl. Phys. Lett. 103 (2013) 112906.
[54] M. Cao, X. Wang, W. Cao, X. Fang, B. Wen, J. Yuan, Thermally driven transport and
relaxation switching self-powered electromagnetic energy conversion, Small (2018)
1800987.
[55] M.S. Cao, X.X. Wang, M. Zhang, J.C. Shu, W.Q. Cao, H.J. Yang, X.Y. Fang, J. Yuan,
Electromagnetic response and energy conversion for functions and devices in
low‐dimensional materials, Adv. Funct. Mater. (2019) 1807398.