EMT182

ANALOG ELECTRONIC I

Frequency Response of Field Effect

Transistors Amplifiers
 Amplifier Frequency Response

Midband

• All coupling and by-pass capacitors are short-circuit.

• All internal capacitive effects (i.e. stray and transistor capacitor) are open-circuit.
• Midband gain, AM ≈ constant, and evaluated by small-signal analysis
• Bandwidth of amplifier (Hz), fBW = fH - fL
• Gain-bandwidth product, GB = | AM |.BW
• Low-frequency range: f < fL: the gain decreases
as the f decrease because of coupling and bypass
capacitor effect.

• High-frequency range: f > fH: stray capacitance

and transistor capacitance effects (internal
capacitors) cause the gain to decrease as the f
increase.

• Mid-band range: region where coupling and

bypass capacitors act as short circuits, and, stray
and transistor capacitance act as open circuit. In
this region, the gain is almost constant.
Inherent Resistances and
Capacitances in n-Channel
MOSFET

1
C gs  C gd  WLC ox
2
LOW-FREQUENCY AMPLIFIER
RESPONSE
Input RC Circuit
Output RC Circuit
Bypass RC Circuit
 FET Amplifier
+VDD

RD
C2

RSi C1 Vo
RL
RG
Vi C3
RS

Common-source FET amplifier

 Low-frequency Equivalent
Circuit

Input RC
Output RC
circuit
circuit

Bypass RC
circuit
The cutoff frequencies defined by the input , output
and bypass circuits can be obtained by the following
formulas:

Input RC
circuit

1
Input RC circuit fc = where
2πRC1C 1 RC1=RSi+RG
 Output RC
circuit

1
Output RC circuit fc = where
2πRC2 C 2 RC2=RD+RL
 Bypass RC
circuit

1
Bypass RC circuit fc = where
2πRC 3C 3 RC3=RS // 1/gm
 Example
Determine the lower cutoff +VDD
frequency for the FET amplifier. 20V
Given K = 0.4mA/V2, VTN= 1V, λ = 0

RD
C2
4.7KΩ
C1 Vo
RSi 0.01µF 0.5µF

10KΩ RL
RG 2.2KΩ
1MΩ RS C3
Vi
2µF
1KΩ
Solution
Since fc in bypass RC circuit is the largest of the
three cutoff frequencies, it defines the low cutoff
frequency for the amplifier:

∴ fc = 238.73Hz
 HIGH-FREQUENCY
AMPLIFIER RESPONSE

Input RC Circuit
Output RC Circuit
 HIGH-FREQUENCY

Small capacitances exist between the

gate and drain and between the gate
and source. These effect the frequency
characteristics of the circuit.

Cgd

Vgs Cgs gmVgs ro

hi-frequency hybrid-π model

Basic data sheet for the BS 107 n-MOSFET

Cgs = Ciss - Crss

Cgd = Crss
 MOSFET Unity-Gain Frequency
• Unity-gain frequency, fT , is defined as a frequency at
which the magnitude of the short-circuit current gain of
the common-source configuration goes to 1.

gm
fT =
2π(C gs +C gd )

• It is a parameter of FET, and is independent of circuit.

• If we neglect rs, rd, ro and Cds, and connect the drain

signal to ground, small signal equivalent circuit will be
as before.
 FET Amplifier
In high-frequency analysis,
coupling and bypass capacitors
are assumed to have negligible
+VDD
reactances and are considered to
be shorts.

R1 RD
C2
vo
RSi C1

RL
vi R2
RS C3
High-frequency hybrid-π model
with Miller effect
The cutoff frequencies defined by the input and output
circuits can be obtained by first finding the Thevenin
equivalent circuits for each section as shown below:

RTH1 RTH2

Cin Cout
vi vi

(a) Input circuit (b) Output circuit

1 1
fc = fc =
2πRTH1Cin 2πRTH2Cout
where RTH1 = RSi||R1||R2 and where RTH2 = RD||RL and
Cin = Cgs + CMi Cout = CMo
 Example
Find the cutoff frequency of the
input and output RC circuit for the
FET amplifier in figure below. +VDD
Given that Cgd=0.1pF, Cgs=1pF, K 10 V
=0.5mA/V2 and VTN=2V, λ=0.
R1 RD 4 kΩ
234 kΩ C2 v
o

RSi C1

10 kΩ 20 kΩ RL

vi R2 166 kΩ
RS C3
0.5 kΩ
Solution