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INTRODUCTION
Flyback converter is isolated switched mode power supply (SMPS) DC–DC
converters; The flyback converter is a buck-boost converter with the inductor split to
form a transformer, so that the voltage ratios are multiplied with an additional
advantage of isolation. When driving for example a plasma lamp or a voltage
multiplier the rectifying diode of the boost converter is left out and the device is
called a flyback transformer. The core of the flyback design has a fairly short and
low-cost bill of materials (BOM): input capacitor, primary-side MOSFET switch,
output (secondary)-side rectifier diode, and an output capacitor. In addition, there’s
the flyback transformer itself (of course, as with any design, the final schematic is
more complicated).
D N2
(
V o =V s (min) ×
1−D)( )
×
N1
Vo = output voltage
D = duty cycle
Vs (min) = source voltage
N2 : N1 = ratio transformer
2. THEORY
2.1. FLYBACK CONVERTER
The flyback converter is based on the buck-boost converter. Its derivation is
illustrated in Fig. 1. Figure 1(a) depicts the basic buck-boost converter, with the
switch realized using a MOSFET and diode. In Fig. 1(b), the inductor winding is
constructed using two wires, with a 1:1 turns ratio. The basic function of the
inductor is unchanged, and the parallel windings are equivalent to a single
winding constructed of larger wire. In Fig. 1(c), the connections between the two
windings are broken. One winding is used while the transistor Q1 conducts, while
the other winding is used when diode D1 conducts. The total current in the two
windings is unchanged from the circuit of Fig. 1(b); however, the
current is now distributed between the windings differently. The magnetic fields
inside the inductor in both cases are identical. Although the two-winding magnetic
device is represented using the same symbol as the transformer, a more
descriptive name is “twowinding inductor”. This device is sometimes also called a
“flyback transformer”. Unlike the ideal transformer, current does not flow
simultaneously in both windings of the flyback transformer. Figure 1(d) illustrates
the usual configuration of the flyback converter. The MOSFET source is
connected to the primary-side ground, simplifying the gate drive circuit. The
transformer polarity marks are reversed, to obtain a positive output voltage. A 1:n
turns ratio is introduced; this allows better converter optimization.
In the basic flyback cycle, closing the primary-side switch increases the primary
current and magnetic flux in the transformer/inductor as the primary-side circuit is
supplied by the source (Fig. 2). The voltage in the secondary-side winding is
negative due to the relative relationship between primary and secondary windings.
Therefore, the diode is reverse-biased and blocks current flow and the secondary-
side capacitor supplies the current to the load during operating phase.
Flybacks (and other many other converter types) can be designed to operate in one of two
modes. In discontinuous conduction mode (DCM), the transformer is allowed to completely
demagnetize during each switching cycle. Usually, this is done with a fixed switching
frequency and modulation of the peak current to meet the load requirements. In continuous
conduction mode (CCM), the current is always flowing in the transformer during each
switching cycle. Therefore, some residual energy is always present in the transformer,
because each switching cycle begins before the current is completely depleted.
With DCM, there are no reverse-recovery losses in the output rectifier since its current goes
down to zero during every switching cycle. The required primary-side inductance value is
low and needs only a smaller transformer. Analytically, the DCM design is inherently more
stable, since there’s no zero in the right-half-plane zero of its transfer function. However,
DCM has very large ripple currents and thus requires larger filters.
In contrast, CCM has small ripple and RMS currents. These lower currents also lower the
conduction and turn-off losses, while lower peak currents allow for smaller filter components.
But the CCM disadvantage is that it has a zero in the right-half-plane of the transfer function,
which will limit the bandwidth of the control loop and its dynamic response. CCM also
requires a larger inductance and thus a larger magnetic component.
As with any power-supply design, certain variations and enhancements can turn a good
supply into a very good one. In DCM, there’s a dead time or resonant “ring” where neither
the diode nor the MOSFET is conducting, created by interaction between the primary
inductance of the transformer and the parasitic capacitance at the switch node. A quasi-
resonant (QR) design adjusts the peak current and switching frequency so that the MOSFET
turns on at the first “valley” of this resonant ringing and minimizes losses.
Another enhancement is “valley switching.” The controller detects when the dead-time
resonant ring is at its low point and turns the MOSFET on at this point to start the next
switching cycle, also to reduce switching losses.
Modern IC controllers minimize many of the inevitable challenges of designing a complete
flyback supply while enhancing performance. For example, Analog Devices’ LT3816
3. PARAMETER CALCULATION
Q : MOSFET IRFPG
D : Fast Recovery Diode (STTH60L06C)
L : Ferrit Core PQ 3535 with Cross sectional are (Ac=1.96 cm2)
Co : Output capacitor (Co=? ;50Volt-100Volt)
Rs : Snubber resistor (Rs=? 10 (20) watt)
Cs : Snubber capacitor (Cs=? 1kVolt)
Ds : Snubber diode (FR307)
SOLUTION
1. Ratio of N1:N2
D N2
V o =V s (min) × × ; D=0.5
1−D N 1
N 1 V S(min) D
= ×
N2 Vo 1−D
N 1 80 0.5 80
= × = =4
N 2 20 1−0.5 20
I max=2.33 Ampere
Lm I max
N P(min)= ×10 4 ; Bsat =0.3 Tesla ; A c =1.96 η cm2
B sat Ac
L I
N P(min)= m max ×10 4
B sat Ac
720 μ × 2.33
N P(min)= ×10 4=28.65306122=29
0.3 ×1.96
7. Primary Winding
The real N P can be choosen at 2 × N P(min)
N P=2 × N P(min)=2 ×29=58
8. Secondary Winding
N p 58
Ns= = =15.22309711 ≈ 16
n 3.81
√
I p (rms )=I L (rms )= 1.392 + (√3 )
I p (rms )=I L (rms )=1.44675787 Ampere=1.45 Ampere
I s (rms )=n× I p ( rms )=3.80952381× 1.44675787
I s (rms )=5.511458553 Ampere=5.51 Ampere
Secondary ( I s (rms ) )
- I s (rms )=5.51 Ampere
J =4.5 A/mm2
I s(rms) 5.51 A
q w(t )= = =1.224444444
J 4.5 A /mm2
4 4
d w (t )=
√ π √
×q w (t )=
π
d ws(secondary) =d ws ( primary )=0.4 mm
×1.224444444=1.248603655
1 1
q ws ( secondary )= × π × d ws ( secondary )2= × π ×0.4 2=0.125663706
4 4
I s (rms ) split =q ws ( secondary ) × J =0.125663706× 4.5=0.565486677
I s (rms ) split =0.57 Ampere
I ( ) 5.51
Σ Split = s rms = =9.666666667 ≈ 10
I s ( rms ) split 0.57
P p=¿
P p=27878.49321mm=27.87849321m=27.9 m
Ps =( N s × K bobbin ×( Σ Split secondary + Additional Winding )) +50 % × ( N s × K bobbin ×(Σ Split secondary + Addition
Length of wire=( P p + P s )
Pattern of Winding
P1S1S2S3 P2S4S5S6 P3S7S8S9S10 “P4S11 P5S12 P6S13”
Split-1 Split-2 Split-3 Additional winding = 3 × P × S
Calculation of Snubber Parameters
Snubber Parameter:
V s (max)
Vo
Io
fs
Duty cycle
T fall
N 1 :N 2
a. Period
1 1
T= = =25 μs
f 40 k
b. Load R
V 20
R= o = =8 Ω
I o 2.5
c. Ion
V o2 20 2
I on=I Lm = = =1.111111111 Ampere
V s(max ) × D× R 90× 0.5 ×8
I on=I Lm =1.11 Ampere
d. Voff
N1 80
V off =V s+ V o ( )
N2
=90+ 20× ( )
20
=170 Volt
e. Csnubber
I on × t fall
C snubber ≈
2× V off
t fall=36 ns
I on × t fall 1.111111111 ×36 × 10−9
C snubber ≈ = =0.117647058 nF
2× V off 2 ×170
C snubber ≈ 0.12 nF
So ,C snubber =0.12 nF
f. Rsnubber
D ×T
R snubber <
2×C snubber
0.5 ×25 μ
R snubber <
2× 0.117647058 n
R snubber <65 k Ω
65 k Ω
R snubber= =32.5 k Ω
2
R snubber ≈32 k Ω, 10 Watt
g. Dsnubber
Diode that is used in this circuit is FR307