Analog Power AM4407P

P-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize
PRODUCT SUMMARY
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making VDS (V) rDS(on) m(Ω) ID (A)
this device ideal for use in power management 9 @ VGS = -10V -15
circuitry. Typical applications are PWMDC-DC -30
converters, power management in portable and 13 @ VGS = -4.5V -11
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
• Low rDS(on) Provides Higher Efficiency and
1 8
Extends Battery Life
2 7
• Miniature SO-8 Surface Mount Package
Saves Board Space 3 6

• High power and current handling capability 4 5

• Extended VGS range (±25) for battery pack

applications

o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS ±25
o
a TA=25 C -15
Continuous Drain Current o
ID
TA=70 C -11 A
b
Pulsed Drain Current IDM ±50
a
Continuous Source Current (Diode Conduction) IS -2.1 A
o
a TA=25 C 3.1
Power Dissipation o
PD W
TA=70 C 2.3
o
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C

THERMAL RESISTANCE RATINGS

Parameter Symbol Maximum Units
a o
Maximum Junction-to-Case t <= 5 sec RθJC 25 C/W
a o
Maximum Junction-to-Ambient t <= 5 sec RθJA 50 C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature

1 Publication Order Number:

September, 2002 - Rev. A DS-AM4407_C
PRELIMINARY
Analog Power AM4407P

SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)

Limits
Parameter Symbol Test Conditions Unit
Min Typ Max
Static
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = -250 uA -1 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ±25 V ±100 nA
VDS = -24 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS o uA
VDS = -24 V, VGS = 0 V, TJ = 55 C -5
A
On-State Drain Current ID(on) VDS = -5 V, VGS = -10 V -50 A
VGS = -10 V, ID = -13 A 9
A VGS = -4.5 V, ID = -11 A 13
Drain-Source On-Resistance rDS(on) mΩ
o
VGS = -10 V, ID = -13 A, TJ = 55 C 11
A
Forward Tranconductance gfs VDS = -5 V, ID = -13 A 44 S
Diode Forward Voltage VSD IS = 2.1 A, VGS = 0 V -0.7 V
Dynamicb
Total Gate Charge Qg 37.0
VDS = -15 V, VGS = -10 V,
Gate-Source Charge Qgs 10.0 nC
ID = -13 A
Gate-Drain Charge Qgd 14.5
Switching
Turn-On Delay Time td(on) 19
Rise Time tr VDD = -15 V, RL = 6 Ω , ID = -1 A, 11
nS
Turn-Off Delay Time td(off) VGEN = -10 V 121
Fall-Time tf 68

Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.

Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.

2 Publication Order Number:

September, 2002 - Rev. A DS-AM4407_C
PRELIMINARY
Analog Power AM4407P

Typical Electrical Characteristics (P-Channel)

50 2.6
VGS = -10V
-3.5V VGS = -3.0V

DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)

40 2.2

RDS(ON), NORMALIZED
-6.0V -4.5V -3.0V
1.8
30 -3.5V

-4.0V
-4.5V
1.4
20
-5.0V -6.0V
-2.5V -10V
1
10

0.6
0
0 10 20 30 40 50
0 0.5 1 1.5 2
-ID, DIRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics Drain Current and Gate Voltage
DRAIN-SOURCE ON-RESISTANCE

1.4 0.04
RDS(ON) , ON-RESISTANCE (OHM)
ID = -13A
ID = -13A
VGS = -10V
RDS(ON) , NORMALIZED

1.2 0.03

o
1 0.02 TA = 125 C

o
TA = 25 C
0.8 0.01

0.6 0
-50 -25 0 25 50 75 100 125 2 2.5 3 3.5 4 4.5 5

TJ, JUNCTION TEMPERATURE (oC) -VGS , GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with
with Temperature Gate to Source Voltage
-IS , REVERSE DRAIN CURRENT (A)

100
50
VGS = 0V T A = 125 C
o
VDS = -5.0V
-ID, DRAIN CURRENT (A)

10
40

1
30

o 0.1
20
T A = -125 C
o 0.01
-55 C
10 o
o 25 C
25 C 0.001 o
-55 C
0
1.5 2 2.5 3 3.5
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
-VGS , GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
Figure 5. Transfer Characteristics
with Source Current and Temperature

3 Publication Order Number:

September, 2002 - Rev. A DS-AM4407_C
PRELIMINARY
Analog Power AM4407P

Typical Electrical Characteristics (P-Channel)

10 6000
-VGS, GATE-SOURCE VOLTAGE (V)

ID = -13A
f = 1 MHz
5000 VGS = 0 V
8
Ciss

CAPACITANCE (pF
VDS = -10V
4000
-15V
6

-20V 3000
4
2000
Coss
2
1000
Crss
0 0
0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
-VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

100 60
RDS(ON) LIMIT 100ms
P eak T ransient P ow er (W )
-ID, DRAIN CURRENT (A)

1ms 50
10ms
10
100ms 40
1s
1 10s 30
DC
20
VGS = -10V
0.1
SINGLE PULSE
o
10
RqJA = 125 C/W
o
TA = 25 C 0
0.01
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100

-VDS , DRAIN-SOURCE VOLTAGE (V) TIME (S)

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation

NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT

0.5 RQJ A(t) = R(t) + RQJ A

RQJA = 125ºC/W

0.2 P(P K)

0.1 0.1
t1

t2
0.05
T J - T A = P ÷ RQJ A(t)
0.02

SINGLE P ULSE
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (S)

Figure 11. Transient Thermal Response Curve

4 Publication Order Number:

September, 2002 - Rev. A DS-AM4407_C
PRELIMINARY
Analog Power AM4407P

Package Information
SO-8: 8LEAD

H x 45°

5 Publication Order Number:

September, 2002 - Rev. A DS-AM4407_C
PRELIMINARY