PUT PROGRAMMABLE UJT

The Programmable Unijunction Transistor behaves much like a unijunction transistor

(UJT), but is "programmable" via external resistors (that is, you can use two resistors
to set a PUT's peak voltage). Note that the name is a bit of a misnomer -- as a thyristor,
it is a four layer device, unlike a true unijunction transistor which has but two layers.

Like other thyristors, a PUT looks much like a junction transistor with a fourth layer
and therefore a total of three P-N junctions. Meanwhile, a third terminal, the gate (G),
makes a PUT function like a hybrid of transistor and diode:

PUTs are essentially special-purpose devices in electronics, used for lighting control,
motor speed control and other variable power applications. In combination with an
SCR they can, though, make a mean solar engine.

In a pinch, you can build up something much like a PUT from discrete transistors
wired as a complementary feedback pair:

Here, as soon as any current flows in either transistor, this current becomes base
current for the other transistor, and both transistors turn on hard. This means you can
only build up this circuit using low-leakage transistors ('though this should be the
case with any decent-quality modern transistor ).
Programmable UJT

Programmable UJT

The programmable unijunction transistor (PUT) is not a unijunction transistor at all.

The fact that the V-I characteristics and applications of both are similar prompted the
choice of labels.

It is also a four-layer P-N-P-N solid-state device with a gate connected directly to the
sandwiched N-type layer. The basic structure, schematic symbol and the basic biasing
arrangement of PUT are shown in figures respectively. As the symbol indicates, it is
essentially an SCR with a control mechanism that permits a duplication of the
characteristics of the typical SCR. The term “programmable” is applied because the
inter base resistance RBB, the intrinsic stand-off ratio Ƞ and peak-point voltage VP, as
defined in UJT can be programmed to any desired values through external resistors RB
and RB2 and the supply voltage VBB. From figure we see that by voltage divider rule
when IG = 0,

VG = (RB1 / RB1 + RB2 ) VBB = Ƞ VBB

Consider figure The P-N-P-N device shown in figure has its gate connected to the
junction of external resistors RB and RB . The four-layer construction shown in figure
indicates that the anode-gate junction is forward biased when the anode
becomes positive with respect to gate. When this occurs, the device is turned on. The
anode-to-cathode voltage VAK then drops to a low level, and the device conducts
heavily until the input voltage become too low to sustain conduction. It is seen that
this action stimulates the performance of a UJT. The anode of the device acts as the
emitter of UJT.
Characteristics of Programmable UJT

The typical characteristics of the device are shown in figure. The firing or peak-point
potential is given as

VP = Ƞ VBB + VB as defined for the UJT.

However VP represents the voltage drop VAK in figure [ the forward voltage drop
across the conducting diode]. For silicon VB is typically 0.7 V.

In PUT RB1 and RB2 are the external resistors to the device permitting the adjustment
of Ƞ and hence VG while in the UJT both RB1 and RB2 represent the bulk resistance
and ohmic base contacts of the device (both inaccessible). Although the
characteristics of the PUT and UJT are similar, the peak and valley currents of the
PUT are typically lower than those of a UJT of a similar rating. In addition, the
minimum operating voltage of PUT is also lower than that of UJT.

Application of PUT

PUT Relaxation Oscillator

PUT, because of its superiority over UJT, replaces UJT. One popular application of
PUT is in the relaxation oscillator shown in figure. The instant the supply VBB is
switched on, the capacitor starts charging toward VBB volts, since there is no anode
current at this point. The instant the voltage across the capacitor equals VP, the device
fires and anode current IA = IP is established through the PUT. As soon as the device
fires, the capacitor starts discharging rapidly through the low on-resistance of the PUT
and RK. Consequently, a voltage spike is produced across RK during the discharge. As
soon as the capacitor C gets discharged, the PUT turns off and the charging cycle
starts all over again as narrated above.

The time period required to attain the firing potential VP is given approximately by the
expression

T = RC loge = VBB / VBB – VP = Ƞ VBB

At the point of firing of PUT

IP R = VBB – VP

If R is too large, the current IP cannot be established, and the device will not fire

So RMAX = VBB – VP / IP

Similarly RMIN = VBB – VV / IV

VBB – VP / IP > R > VBB – VV / IV

Programmable uni-junction transistors (PUT) are three-terminal thyristors that are

triggered into conduction when the voltage at the anode exceeds the voltage at the
gate. The PUT is similar to the UJT, but its intrinsic standoff ratio can be set by two
external resistors. Hence, the name "programmable" is used. A PUT is a more
advanced version of a unijunction transistor (UJT). In a programmable unijunction
transistor, operating characteristics such as base-to-base resistance, intrinsic standoff
voltage, valley current, and peak current can be programmed by setting the values of
two external resistors. Applications for programmable unijunction transistors (PUT)
include thyristor triggers, oscillators, pulse, and timing circuits, with frequencies up to
10 kHz. An integrated circuit can include not only an integrated circuit chip, but also
a circuit transistor such as a programmable unijunction transistor.

Performance specifications for programmable unijunction transistors (PUT) include

peak current (with RG of 10K ohms and 1M ohms), valley current (with RG of 10K
ohms and 1M ohms), gate-to-cathode forward voltage, gate-to-cathode reverse
voltage, gate-to-anode reverse voltage, anode-to-cathode voltage, peak non-repetitive
forward current, peak repetitive forward current, peak repetitive forward current, DC
forward anode current, DC gate current, power dissipation, storage temperature,
operating junction temperature. Programmable unijunction transistors (PUT) can be
packaged individually or in standard packaging for high-volume requirements, such
as automatic insertion equipment.