INTRODUCTION

• Miniaturization came in with availability of stable oscillators & VLSI technology

• Tracks in pcbs were now required to handle higher frequencies & requirement
of better implementation of miniaturized transmission lines / waveguides

• Implementation - Flattened Txn lines on pcbs and inside (multilayer pcbs)

• Extensive study into transit time, standing waves, crosstalk & attenuation

• Dielectric properties for electromagnetic transmission became important

• Many solutions are available and each has got its own properties. Design
parameters & choice of a particular implementation dictated by specific
requirements, cost, speed of Txn, coupling etc

• There are rarely, if any, closed form expressions for transmission parameters
 STRIPLINE BASICS
• Printed microwave transmission lines are used in the modern eqpt for the
following advantages

– Compact and lightweight

– Easily adaptable to Integrated Circuits fabrication technologies
– Broadband capability
– Can be adapted to various form & fit

• Applications of striplines are in

– Tracks of almost all hardware operating @ f > 1 GHz

– Conformal antennas mounted on aircraft
– RFIDs
– Mobile phones, WiFi antennas, bluetooth devices & the list is endless ……
 WHY TEM IS PREFERRED
𝟏 𝟏
• In case of TEM mode, 𝒗𝒑 = and in a waveguide 𝒗𝒑 =
𝝁𝝐 𝝎𝟐 𝝁𝝐 − 𝒌𝟐
• Thus in waveguides 𝒗𝒑 ,  and Z0 depend on ω & dispersion is inevitable

• Hence TEM is preferred

• In low power Integrated circuits & pcbs power is at a premium and wastage
through multiple modes is to be avoided. Striplines are preferred

• Striplines are reasonably non-dispersive provided 𝐡 < 𝟒
𝒘𝒉𝒆𝒓𝒆  = 𝟎 / 𝝐𝒓
• As the freq increases, TE & TM modes also start to propagate leading to
dispersion
STRIPLINE TYPES
 STRIPLINE BASICS
One or more strip
conductors
W immersed in a
h εr
dielectric

• TEM mode propagates inside the dielectric

• The top & bottom ground planes are shorted to avoid unwanted modes. But
this increases capacitance and reduces 𝒁𝟎 . (Note 𝒁𝟎 ≅ 𝑳Τ𝑪 = 𝝁/𝝐 )

• Strip lines better suited for multilayer pcbs since it is required to be embedded

• Striplines are more difficult to manufacture

 STRIPLINE BASICS
One or more strip
W conductors
h εr immersed in a
dielectric

𝟏 𝒄 𝝎 𝝁 𝝁𝝐 𝟏
• In TEM mode, 𝒗𝒑 = = , 𝜷= & 𝒁𝟎 = = =
𝝁𝝐 𝝐𝒓 𝒗𝒑 𝝐 𝝐 𝒗𝒑 𝝐

• 𝒁𝟎 & vp are freq independent. As freq increases, TE & TM modes start to

propagate.
• To prevent modes other than TEM, the following condition is to be satisfied
 𝝀
𝒉< where 𝝀 = 𝟎 Larger 𝝐𝒓 will increase propagation delay
𝟒 𝝐𝒓
𝟑 𝑿 𝟏𝟎𝟖
• For 𝝐𝒓 = 𝟔 and 𝒇 = 𝟏𝟎 𝑮𝑯𝒛 effective 𝝀 = = 𝟏. 𝟐𝟐𝟓 𝒄𝒎 & 𝒉 <
𝟏𝟎 𝑿𝟏𝟎𝟗 𝟔
𝟑. 𝟎𝟑 𝒎𝒎
 STRIPLINE BASICS
Assumption : f is
low enough for
W only TEM mode
h εr
to propagate

• There are no closed form equations for determination of Z0

• Through numerical methods, the value of Z0 is established as

𝟑𝟎𝝅 𝒉
𝒁𝟎 = As W/h increases, Z0 decreases
𝝐𝒓 𝑾𝒆 +𝟎.𝟒𝟒𝟏𝒉

𝟎. 𝟑𝟓 − 𝑾Τ 𝟐 , 𝑾Τ < 𝟎. 𝟑𝟓
𝑾𝒆 𝑾 𝒉 𝒉
We is the effective width given by = − ൝ 𝑾Τ ≥ 𝟎. 𝟑𝟓
𝒉 𝒉 𝟎, 𝒉

W/h ratio important since it decides Z0. It also imposes challenges in

manufacture.
 STRIPLINE BASICS
𝟑𝟎𝝅 𝒉
𝒁𝟎 =
𝝐𝒓 𝑾𝒆 + 𝟎. 𝟒𝟒𝟏𝒉
• This equation is accurate to within 1%. W/h is an important ratio in stripline conductors

• Z0 varies inversely with W/h since it is approximately 𝑳Τ

𝑪 . As W increases C increases

W/h = 0.58 for Z0 of 50 Ω; (From curve) Z0 in Ω

W = 0.943 mm & h = 1.626 mm 50

1” = 1000 mils 40
25.4 mm = 1000 mils
30
1 mil = 0.001”
1 mil = 0.0254 mm 20

𝟎.𝟗𝟒𝟑 10
𝑾 = 𝟎. 𝟗𝟒𝟑 𝒎𝒎 = = 𝟑𝟒. 𝟏𝟐 𝒎𝒊𝒍𝒔
𝟎.𝟎𝟐𝟒𝟓

𝟏. 𝟔𝟐𝟔 2 4 6 8 10
𝒉 = 𝟏. 𝟔𝟐𝟔 𝒎𝒎 = = 𝟔𝟒. 𝟎𝟏𝟓 𝒎𝒊𝒍𝒔
𝟎. 𝟎𝟐𝟓𝟒 W/h
 STRIPLINE DESIGN
• Usually, 𝒉, 𝝐𝒓 and 𝒁𝟎 will be available and W is to be determined for feeding into the
manufacturing process

• Thus, alternatively, if 𝒉, 𝝐𝒓 and 𝒁𝟎 are specified, the W/h ratio can be determined from
the graph or the following equation and the stripline can be designed

𝑾 𝒙 𝒁𝟎 𝝐𝒓 ≤ 𝟏𝟐𝟎 𝟑𝟎𝝅
= ൝ Where, 𝐱= − 𝟎. 𝟒𝟒𝟏
𝒉 𝟎. 𝟖𝟓 − 𝟎. 𝟔𝒙 𝒁𝟎 𝝐𝒓 > 𝟏𝟐𝟎 𝒁𝟎 𝝐𝒓

𝐖
• For Z0 = 50 Ω and 𝝐𝒓 = 2.38, = 𝟎. 𝟓𝟖𝟒𝟑 It matches with the earlier figure
𝐡

• These formulae assume zero thickness.

• Observations :
– W should be as narrow as possible for better Z0
– But manufacture of W/h <0.1 is exceedingly difficult
 STRIPLINE ATTENUATION
𝟐𝝅𝒇
• Further, 𝜷 = 𝜷𝟎 𝝐𝒓 Where 𝜷𝟎 = and is the free space wave number
𝒄

• Total attenuation is given by, 𝜶 = 𝜶𝒄 + 𝜶𝒅

𝜷 𝒕𝒂𝒏 𝜹
• 𝜶𝒅 = 𝟐

𝟐.𝟕 𝐗 𝟏𝟎−𝟑 𝑹𝒔 𝝐𝒓 𝒁𝟎
𝑨 𝒁𝟎 𝝐𝒓 ≤ 𝟏𝟐𝟎
𝟑𝟎𝝅(𝒉−𝒕)
𝜶𝒄 = ൞𝟎.𝟏𝟔𝑹
𝒔
𝑩 𝒁𝟎 𝝐𝒓 > 𝟏𝟐𝟎
𝒁𝟎 𝒉

𝟐𝐖 𝟏 𝐡+𝐭 𝟐𝐡−𝐭
• 𝐀=𝟏+ + 𝐥𝐧
𝐡−𝐭 𝝅 (𝐡−𝐭) 𝒕

𝐡 𝟎.𝟒𝟏𝟒 𝟏 𝟒𝝅𝑾
• 𝐁=𝟏+ 𝟎. 𝟓 + + 𝒍𝒏
𝟎.𝟓𝑾+𝟎.𝟕𝒕 𝑾 𝟐𝝅 𝒕
 MICROSTRIP BASICS

• Defined as a conductor designed to carry microwave frequency signals

separated from the ground by a substrate (dielectric medium)
• The conductor is usually made of gold or copper
• EM waves propagate in Microstrips as Quasi-TEM mode because of the air –
substrate dielectric interface requiring application of boundary conditions.
• There is no single 𝝐𝒓 . Instead, 𝝐𝒓, 𝒆𝒇𝒇 is empirically calculated and calculations
are made based on it
• At low frequencies, it may be considered TEM wave
• At higher frequencies, appreciable axial components appear and the mode is
no longer pure TEM leading to dispersive behaviour
MICROSTRIP MAXIMUM USABLE FREQUENCY
ഥ
𝑯
ഥ
𝑬
t W

h εr

• Easy for probe instruments and measurements

• Since TEM mode not strictly enforceable, waveguide modes will propagate
• Max freq can be limited & unwanted modes can be restricted through choice
of W & h (Similar to Stripline)
• If 𝝀𝒉 is wavelength of the highest frequency of interest
𝝀𝒉 𝝀𝒉
• Then, 𝑾 < ൗ𝟐 and 𝒉 < ൗ𝟒

𝒄 𝒄
• 𝒉< and 𝑾<
𝟒𝒇𝒎𝒂𝒙 𝝐𝒓 𝟐𝒇𝒎𝒂𝒙 𝝐𝒓
 MICROSTRIP EFFECTiVE PERMITTIVITY
• Due to Quasi TEM, some energy is stored in the air and some in the dielectric
• Effective dielectric 𝝐𝒓, 𝒆𝒇𝒇 will be between 0.5 𝝐𝒓 to 0.85 𝝐𝒓 (substrate - 𝝐𝒓 )
𝟑𝒄𝒎
• @ 10 GHz, 𝝀 = 𝟑𝒄𝒎 , 𝝐𝒓 = 𝟏𝟎. 𝟎 , and effective 𝝀 = = 𝟏. 𝟏𝟕 cm
𝝐𝒓,𝒆𝒇𝒇

• The maximum stub length will be 5.6 mm and Td from A to B increases thrice

• If the strip is very wide, then most electric field lines will be between the
conductor and the substrate (like in a capacitor) and Max 𝝐𝒓,𝒆𝒇𝒇 ≈ 𝝐𝒓
• If the strip is very narrow, then electric field lines will be shared equally
𝟏
between the substrate and air and Min 𝝐𝒓,𝒆𝒇𝒇 ≈ 𝝐𝒓 + 𝟏
𝟐
• Through numerical calculations, it is found that

𝝐𝒓 + 𝟏 𝝐𝒓 − 𝟏 𝟏
𝝐𝒓, 𝒆𝒇𝒇 = +
𝟐 𝟐 𝟏 + 𝟏𝟐 𝒉Τ𝑾
Z0 v/s W/h for different ϵre IN MICROSTRIPS
Z0 v/s W/h for different ϵre IN MICROSTRIPS
CHARACTERISTIC IMPEDANCE OF MICROSTRIP

𝟔𝟎 𝟖𝒉 𝑾 𝑾Τ
𝒍𝒏 + 𝒉 <𝟏
𝝐𝒓, 𝒆𝒇𝒇 𝑾 𝟒𝒉
Z0 is given by 𝒁𝟎 = 𝟏𝟐𝟎𝝅 𝑾Τ ≥𝟏
𝝐𝒓, 𝒆𝒇𝒇 𝑾ൗ𝒉+𝟏.𝟑𝟗𝟑+𝟎.𝟔𝟔𝟕𝒍𝒏 𝑾ൗ𝒉+𝟏.𝟒𝟒𝟒 𝒉

• These equations are not in a closed form i.e. changes to W/h will change the
RHS as well as applicability of the equation

• Usually, the solutions are obtained through MATLAB or through numerical

methods

• For EMI shielding, microstrips are enclosed in a metallic box. This lowers Z0.
Can be neglected if wall to wall is 5 times dimension of microstrip in x & y
 MICROSTRIP – EFFECT OF W/h RATIO
• Max of 100 because W/h ≈ 0.1 Z0
Lower W/h difficult to Inductive; Mostly Magnetic energy;
manufacture 100
Energy shared between dielectric and air
60
• Narrow strip (lower W) less
capacitive than wide one. 80
Implying higher Z0 Capacitive;
40
Most energy in dielectric
Recall 𝒁𝟎 ≈ 𝑳Τ𝑪 20
W/h
1 2 3 4 5

• Lower 𝒁𝟎 implies lower crosstalk (desirable) but load matching problematic

• Shielding over microstrips reduces impedance and results in lesser cross talk

• If H is height of top cover from ground, (H-h)/h > 10 has minimal effect on 𝒁𝟎
 MICROSTRIP – EFFECT OF SHIELDING
• Enclosing in a box makes it similar to a cavity resonator and dimensions
should be such that the waveguide modes are below the cut-off
frequency of the box
• Effective Dielectric constant will change as shown in the figure
• As H is lowered, the space above will enable E field and ϵre will get closer
t that of air (1.0)
• As H increases,
fields will become
weaker and 𝝐𝒓, 𝒆𝒇𝒇
moves closer to 𝝐𝒓
 EXPRESSIONS IN A MICROSTRIP
𝝐𝒓 +𝟏 𝝐 −𝟏 𝟏
• 𝝐𝒓, 𝒆𝒇𝒇 = + 𝒓
𝟐 𝟐 𝟏+𝟏𝟐𝒉Τ𝑾

𝝎
• 𝜷= = 𝒌𝟎 𝝐𝒓,𝒆𝒇𝒇
𝒗𝒑
𝟏 𝒄
• 𝒗𝒑 = =
𝑳𝑪 𝝐𝒓,𝒆𝒇𝒇

𝑳 𝑳𝑪 𝟏
• 𝒁𝟎 = = =
𝑪 𝑪 𝒗𝒑 𝑪
MODELLING MICROSTRIP AS CONDUCTOR OVER GROUND

d
t
W
h εr h εr

• For analytical calculations, it is modelled as a conductor over ground as

shown
• This method is called the Indirect Method or Comparative Method

• Characteristic impedance of the wire-over-ground is given by

𝟔𝟎 𝟒𝒉
𝒁𝟎 = 𝒍𝒏
𝝐𝒓 𝒅
 TRANSFORMATION OF RECTANGULAR MICROSTRIP
TO EQUIVALENT CIRCULAR CONDUCTOR
• Rectangular microstrip with width of W and thickness of t is to be converted to
a regular circular conductor with a diameter of d
• The approximations are valid for 𝟎. 𝟏 ≤ 𝒕Τ𝒘 ≤ 𝟎. 𝟖 which is the linear part
of the curve 𝒅ൗ
𝒘
• Measurements led to empirical 1.1
formula
𝒕 1.0
𝒅 = 𝟎. 𝟔𝟕𝑾 𝟎. 𝟖 +
𝑾
0.9

• This is valid only for 0.8

𝟎. 𝟏 ≤ 𝒕ൗ𝒘 ≤ 𝟎. 𝟖 0.7

0.6

𝒕ൗ
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 𝒘
 OPEN LINE MICROSTRIP
• Propagation delay in free space is
given by a homogeneous dielectric
medium is given by
𝒏𝒔 𝒏𝒔
𝑻𝒅𝒇 = 𝝁𝟎 𝝐𝟎 = 𝟑. 𝟑𝟑 = 𝟏. 𝟎𝟏𝟔 𝝐𝒓𝒆
𝒎 𝒇𝒕
6
• Propagation delay in a homogeneous
dielectric medium is given by 5
𝑻𝒅 = 𝟑. 𝟑𝟑 𝝐𝒓 in ns/m
𝑻𝒅 = 𝟏. 𝟎𝟏𝟔 𝝐𝒓 in ns/ft 4

• Transmission delays in a boards of 2

different materials correlated with
the board effective dielectric 1
constant yields the empirical formula
𝝐𝒓,𝒆𝒇𝒇 = 𝟎. 𝟒𝟕𝟓𝝐𝒓 + 𝟎. 𝟔𝟕 𝝐𝒓
1 2 3 4 5 6
CHARACTERISTIC IMPEDANCE OF MICROSTRIP
𝟔𝟎 𝟒𝒉
𝒁𝟎 = 𝒍𝒏
𝝐𝒓,𝒆𝒇𝒇 𝒅
𝒕
𝒉 = 𝟎. 𝟔𝟕𝒘 𝟎. 𝟖 + and 𝝐𝒓𝒆 = 𝟎. 𝟒𝟕𝟓𝝐𝒓 + 𝟎. 𝟔𝟕
𝑾

• Substituting the values, we get,

𝟖𝟕 𝟓.𝟗𝟖𝒉 𝒕Τ
𝒁𝟎 = 𝒍𝒏 Valid only for 𝟎. 𝟏 ≤ 𝒘 ≤ 𝟎. 𝟖
𝝐𝒓+𝟏.𝟒𝟏 𝟎.𝟖𝒘+𝒕

𝒄
• Velocity of propagation is given by 𝒗=
𝝐𝒓𝒆
 ATTENUATION IN MICROSTRIP
Conductor, dielectric and radiation losses occur in microstrips

In general we can say that the fields 𝑬, 𝑯 𝒑𝒓𝒐𝒑𝒐𝒓𝒕𝒊𝒐𝒏𝒂𝒍 𝒕𝒐 𝒆−𝜶𝒛

Hence the carried power denoted by W 𝒑𝒓𝒐𝒑𝒐𝒓𝒕𝒊𝒐𝒏𝒂𝒍 𝒕𝒐 𝒆−𝟐𝜶𝒛
𝒅𝑾
Differentiating, we get, 𝒑𝒓𝒐𝒑𝒐𝒓𝒕𝒊𝒐𝒏𝒂𝒍 𝒕𝒐 −𝟐𝜶 ∝ 𝒆−𝟐𝜶𝒛
𝒅𝒛
Dividing, we get,
𝒅𝑾ൗ
𝒅𝒛
𝜶 = − = 𝜶𝒄 + 𝜶𝒅 ……….. 1
𝟐𝑾
Radiation losses treated differently in microstrips

𝒅𝑾 𝒅 𝟏 ∗ 𝟏 𝒅𝑽 ∗ 𝟏 𝒅𝑰∗
− =− 𝑽𝑰 =− 𝑰 − 𝑽
𝒅𝒛 𝒅𝒛 𝟐 𝟐 𝒅𝒛 𝟐 𝒅𝒛

𝒅𝑾 𝟏 𝟏
− = 𝑹𝑰 𝑰∗ + 𝒀𝑽∗ 𝑽 = 𝑷𝒄 + 𝑷𝒅 ……….. 2
𝒅𝒛 𝟐 𝟐
 DIELECTRIC LOSSES IN MICROSTRIP
• In a dielectric where the loss tangent is small,
𝝈 𝝁
• 𝜶𝒅 =
𝟐 𝝐

𝝈 𝝎𝝐𝒕𝒂𝒏𝜹 𝝁 𝝎
• 𝒕𝒂𝒏𝜹 = = Hence, 𝜶𝒅 = = 𝝁𝝐 𝒕𝒂𝒏𝜹
𝝎𝝐 𝟐 𝝐 𝟐

𝒒𝝈 𝝁𝟎 𝝐𝒓𝒆 −𝟏
• 𝜶𝒅 = 𝟒. 𝟑𝟒 where 𝝐𝒓𝒆 = 𝟎. 𝟒𝟕𝟓𝝐𝒓 + 𝟎. 𝟔𝟕 and 𝒒 =
𝝐𝒓𝒆 𝝐𝟎 𝝐𝒓 −𝟏

• q is the dielectric filling factor

 CONDUCTOR LOSSES IN MICROSTRIP
• Substituting Eqn 2 in Eqn 1 we get 𝜶 𝒄 𝒁𝟎 𝒉
ൗ𝑹
𝒔
𝟖.𝟔𝟖𝟔𝑹𝒔
𝜶𝒄 = dB/cm for W/h > 1
𝒁𝟎 𝑾
This equation is not valid for W/h < 1 t/h = 0.005
since current density is not constant 32
in the transverse plane AND there
16
are no closed form expressions for t/h = 0.01
ohmic losses
8
t/h = 0.02
These losses are read out of graphs 4
produced by experimental work
2
Conductor losses increase with
reduction in t 1
0.1 0.2 0.4 0.8 1.6 3.2
𝑾/𝒉
Uneven surfaces can increase conductor losses by nearly 60%. Hence
manufacturing process have to be very tightly controlled
 RADIATION LOSSES IN MICROSTRIP
• In addition to 𝜶𝒄 and 𝜶𝒅 radiation losses are common at higher frequencies

𝑷𝒓𝒂𝒅 𝒉 𝟐 𝑭(𝝐𝒓𝒆 )
• Radiation losses are given by = 𝟐𝟒𝟎𝝅𝟐
𝑷𝒕 𝝀𝟎 𝒁𝟎

𝝐𝒓𝒆 + 𝟏 𝝐𝒓𝒆 − 𝟏 𝝐𝒓𝒆 + 𝟏

Radiation factor is given by 𝑭 𝝐𝒓𝒆 = − − 𝒍𝒏
𝝐𝒓𝒆 𝟐𝝐𝒓𝒆 𝝐𝒓𝒆 𝝐𝒓𝒆 − 𝟏
Observations
1. Radiation loss increases with increase of Z0
2. For low dielectric constant radiation is significant for higher Z0
3. For high dielectric constant radiation is significant till very low Z0 is reached
4. With increase in h, W/h reduces and works well for conductor losses but
radiation losses increase
 SUMMARIZATION OF DESIGN CHOICES
• Low 𝝐𝒓
– Used when cost reduction is priority
– But lesser concentration of energy in substrate & more radiation losses
– Used at millimeter wave freqs to avoid tight manufacturing tolerances
– Lesser transmission delay
– Less stringent W/h requirements

• High 𝝐𝒓
– Used when cost reduction is not a priority
– Reduces radiation losses
– Greater transmission delays
– W/h becomes critical since there is a reduction in Z0
– Conductor losses dominate over dielectric & and radiation losses
– Higher loss tangents in general
 SUMMARIZATION OF DESIGN CHOICES
• Low 𝑾
– Yields better miniaturization and better packing density
– Results in higher conduction losses
– Increases crosstalk due to higher impedance
• Low 𝒉
• Decreasing substrate thickness results in
– compact circuits & ease of integration
– less tendency to launch higher-order modes or radiation,
– Via holes drilled through the dielectric substrate will contribute smaller
parasitic inductances to the overall performance.

• Reduction in h also leads to

– Narrow W to maintain Z0, resulting in higher conductor losses
– Increased radiation losses
– Harder manufacturing process (read costlier)
 Q FACTOR IN A MICROSTRIP
• Radiation, conductor and dielectric losses contribute to the overall loss. Some
of the loss reduction factors are contradictory

• All factors considered are first order perturbations and can be added linearly

• Hence, it is desirable to arrive at a figure of merit for a particular design. This

is done with the help of Q factor defined as

𝟏 𝟏 𝟏 𝟏
= + +
𝑸 𝑸𝒅 𝑸𝒄 𝑸𝒓

• Most microstrips are designed for Q = 250

 STRIPLINE OR MICROSTRIP
Feature STRIPLINE MICROSTRIP
Multilayer pcbs Better Top surface will be too crowded
Z0 More difficult More easily achieved
EMI Easily controlled More difficult to control
Crosstalk Lesser & better More far end causing strain on link budget
𝜶𝒄 Similar but lesser W Better with more relaxed constraint on W
𝜶𝒅 More Lesser since lot of energy travels over air
Cost More Lesser
Manufacture Process more difficult Process easier
Interconnections Better for shunt Better for series
 PARALLEL STRIPLINE
• This is very similar to transmission lines

𝝁𝒅 𝒅 𝝐𝒅 𝑾 W
• 𝑳= 𝐂= ,
𝑾 𝒅

𝟐 𝝅𝒇𝝁𝒅 𝝁𝒅 𝑾
• 𝐑= G= d
𝑾 𝝈𝒄 𝒅
Conductor with μdϵd
• 𝑹 ≪ 𝝎𝑳 & 𝑮 ≪ 𝝎𝑪

𝑳 𝟑𝟕𝟕 𝒅
• The characteristic impedance may be approximated as 𝒁𝟎 = =
𝑪 𝝐𝒓 𝑾
𝝁𝒅 𝑾
G=
𝒅
 PARALLEL STRIPLINE
• Attenuation losses are given by

• 𝜸= 𝑹 + 𝒋𝝎𝑳 𝑮 + 𝒋𝝎𝑪 W

• 𝑹 ≪ 𝝎𝑳 & 𝑮 ≪ 𝝎𝑪
d

𝟏 𝑪 𝑳 Conductor with μdϵd

• 𝜶= 𝑹 +𝑮 and 𝜷 = 𝝎 𝑳𝑪
𝟐 𝑳 𝑪

𝟏 𝑳 𝟏𝟖𝟖𝝈𝒅 𝟏 𝑪 𝟏 𝝅𝒇𝝐𝒅
• 𝜶𝒅 = 𝑮 = and 𝜶𝒄 = 𝑹 =
𝟐 𝑪 𝝐𝒓𝒅 𝟐 𝑳 𝒅 𝝈𝒄
MMIC COMPARISON
COMPARISON BETWEEN VARIOUS MEDIA
MICRO STRIP COAXIAL WAVE
STRIP LINE GUIDE
LINE LOSSES HIGH HIGH MEDIUM LOW
UNLOADED Q LOW LOW MEDIUM HIGH
POWER CAPABILITY LOW LOW MEDIUM HIGH
ISOLATION WITH OTHER COMPONENTS POOR FAIR V GOOD V GOOD
BANDWIDTH LARGE LARGE LARGE SMALL
MINIATURIZATION EX V GOOD POOR POOR
VOLUME AND WEIGHT SMALL MEDIUM LARGE V LARGE
REALIZATION OF PASSIVE CIRCUITS V EASY V EASY EASY EASY
INTEGRATION WITH
CHIPS V GOOD FAIR POOR POOR
FERRITES GOOD GOOD POOR GOOD
LUMPED ELEMENTS V GOOD V GOOD GOOD POOR