AP20T03GH/J

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Lower Gate Charge D BVDSS 30V

▼ Simple Drive Requirement RDS(ON) 50mΩ
▼ Fast Switching Characteristic ID 12.5A
G
S
Description

The TO-252 package is widely preferred for all commercial-industrial G D

S
surface mount applications and suited for low voltage applications TO-252(H)
such as DC/DC converters. The through-hole version (AP20T03GJ) is
available for low-profile applications.

G
D
S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage +20 V
ID@TC=25℃ Continuous Drain Current 12.5 A
ID@TC=100℃ Continuous Drain Current 8 A
1
IDM Pulsed Drain Current 40 A
PD@TC=25℃ Total Power Dissipation 12.5 W
Linear Derating Factor 0.1 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 10 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W

Data & specifications subject to change without notice 1

200809013
AP20T03GH/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A - - 50 mΩ
VGS=4.5V, ID=5A - - 80 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=5V, ID=5A - 6 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (T j=150 C) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= +20V - - +100 nA
2
Qg Total Gate Charge ID=10A - 4 7 nC
Qgs Gate-Source Charge VDS=24V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.3 - nC
2
td(on) Turn-on Delay Time VDS=15V - 6 - ns
tr Rise Time ID=10A - 30 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 10 - ns
tf Fall Time RD=1.5Ω - 3 - ns
Ciss Input Capacitance VGS=0V - 270 430 pF
Coss Output Capacitance VDS=25V - 70 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF
Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=5A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=10A, VGS=0V, - 16 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP20T03GH/J

20 18

18 o
T C =25 C 10V
16
o
TC=150 C
16 7.0V 14 10V
ID , Drain Current (A)

5.0V

ID , Drain Current (A)

14
7.0V
4.5V 12
5.0V
12
10
4.5V
10

8
8

6
6

4
4

V G =3.0V V G =3.0V
2 2

0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 1 1 2 2 3 3

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

75 1.8

ID=5A I D =8A
T C =25 o C 1.5 V G =10V
65
Normalized RDS(ON)
RDS(ON)(mΩ)

1.3

55

1.0

45
0.8

35 0.5
3 5 7 9 11 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 2.5

2.0
VGS(th) (V)
Is (A)

T j =150 o C T j =25 o C

1.5

0 1.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP20T03GH/J

f=1.0MHz
14 1000

I D = 10 A
12
VGS , Gate to Source Voltage (V)

V DS =15V
10
V DS =20V Ciss
V DS =24V

C (pF)
8

100

6 Coss
Crss
4

0 10
0 3 6 9 12 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5

10 100us
0.2

0.1
1ms
ID (A)

1 10ms 0.1
0.05
100ms
1s 0.02 PDM

t
DC 0.01
T
0.1

Single Pulse Duty factor = t/T

T c =25 o C Peak Tj = PDM x Rthjc + T C

Single Pulse
0.01 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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 ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252

D Millimeters
SYMBOLS
MIN NOM MAX
D1
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
E2
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
F1 0.5 0.85 1.20
E1
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65

B1 F1 F

e e 1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

A2 R : 0.127~0.381

A3 (0.1mm C

Part Marking Information & Packing : TO-252

Part Number
Package Code
meet Rohs requirement
20T03GH
LOGO
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence

5
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-251

D Millimeters
A SYMBOLS
c1 MIN NOM MAX
D1 A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.50 0.69 0.88
B2 0.60 0.87 1.14
E1 E
c 0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 5.20 5.35 5.50
A1
E 6.70 7.00 7.30
B2
E1 5.40 5.80 6.20
F e ---- 2.30 ----
B1
F 5.88 6.84 7.80

1.All Dimensions Are in Millimeters.

c 2.Dimension Does Not Include Mold Protrusions.

e e

Part Marking Information & Packing : TO-251

Part Number meet Rohs requirement

for low voltage MOSFET only
20T03GJ Package Code
LOGO
YWWSSS Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW ：Week
SSS ：Sequence