Professional Documents
Culture Documents
4 3 2 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D Table of Contents D
Page. 1 COVER
Bloomington Page. 2
Page. 3
Page. 4~6
OPERATION BLOCK DIAGRAM
BOARD INFORMATION
POWER DIAGRAM / SEQUENCE
Page. 7 CLOCK DISTRIBUTION
g
Page. 8 CLOCK GENERATOR (CK-505M)
Page. 9 THERMAL MONITOR
CPU : INTEL PINEVIEW-M
un al
Page. 10~12 PINEVIEW-M (N450/N470 CPU)
Page. 13~15 TIGERPOINT (NM10 CHIPSET)
Chip Set : INTEL TIGERPOINT-M Page. 16 SPI ROM & DEBUG PORT
Page. 17 DDR2 SODIMM
Remarks : Page. 18 CRT CONN. C
ms nti
C
Page. 19 LCD(LVDS) CONN.
8. Block Diagram and Schematic
P6
360 BGA PKG TYPE
USB (3):Chargeable USB
P7
Sa de
Camera
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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HSDPA
INT. MIC Page 22~25
Batt. PCI_ EXP2
MINI CARD2
SIMM Card
AMP
TPA6017
RF OFF S/W HSDPA/Wibro
4P 2P 2P
(Slide S/W)
PCI_ EXP3 LAN CONTROLLER
RJ45
LAN
SPKR R
SPI LPC Power S/W
Marvell 88E8040 Transformer
SPI ROM
MICOM PCI_ EXP4
SPKR L HD Decoder DDR2
MEC1308 (Slide S/W)
Broadcom BCM70015 Memory
P/S2 Lid S/W
A A
Woofer
SAMSUNG
Space bar
ELECTRONICS
KEYBOARD TOUCHPAD
4 3 2 1
8-2
8-3
4 3 2 1
SAMSUNG PROPRIETARY
BOARD INFORMATION
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D
SCHEMATIC ANNOTATIONS AND BOARD INFORMATION D
PCI Devices
Voltage Rails
Devices IDSEL# REQ/GNT# Interrupts
Power Rail Descriptions
PRTC_BAT 3.3V (can drop to 2.0V min. in G3 state) supply for the RTC well.
g
USB AD29(internal) VDC Primary DC system power supply (9 to 19V)
Hub to PCI AD30(internal) P1.05V(VCCP) VTT for CPU, Calistoga & ICH7-M
LPC Bridge/IDE/AC97/SMBUS AD31(internal) Programable P3.3V_MICOM 3.3V always power rail(for Micom)
Internal MAC AD24(internal) P1.5V 1.5V switched power rail (off in S3-S5)
un al
P1.8V_AUX 1.8V power rail for DDR (off in S4-S5)
P0.9V 0.9V power rail for DDR (off in S4-S5)
P5V_AUX 5.0V power rail (off in S4-S5)
P3.3V_AUX 3.3V power rail (off in S4-S5)
P5V 5.0V switched power rail (off in S3-S5)
P3.3V 3.3V switched power rail (off in S3-S5)
CPU_CORE Core voltage for Atom CPU
I2C / SMB Address
ms nti
Devices Address Hex Bus
ICH7M Master SMBUS Master
C CK-505M (Clock Generator) 1101 001X D2h Clock, Unused Clock Output Disable
C
8. Block Diagram and Schematic
USB M_PCI
P3.3V_MICOM P5.0V CRT FAN CIRCUIT
P5V_AUX MICOM AUX DISPLAY
MICOM
Sa de
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
nfi
CRESTLINE
P1.5V ICH8-M
P3.3V_AUX
ICH7-M LAN
MDC BT Thermal Sensor MICOM
Co
ICH7-M SODIMM
B P5.0V_ALW P3.3V SPI PCMCIA B
LCD LEDs
M_PCI
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ICH7-M
P1.2V_LAN P2.5V
P12.0V_ALW
LAN
Power On/Off Table by S-state P1.8V_LAN
Rail P2.5V_LAN
State S0 S3 S4 S5 LAN
+V*A(LWS)
ON ON ON ON
+V*LAN ON ON S5-S4 S3 S0
+1.8V_AUX ON ON
+0.9V
A +V*AUX
A
ON ON
+V ON
SAMSUNG
ELECTRONICS
+V* (CORE) ON
4 3 2 1
8-4
8-5
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
POWER RAILS ANALYSIS
EXCEPT AS AUTHORIZED BY SAMSUNG.
220V
Rev. 0.6 (060920)
D D
Adapter Battery
5.0V_AUX ( TBD A )
3.3V_AUX ( TBD A )
MICOM 3V ( TBD A )
g
1.05V
0.1 A (TBD) ITP
un al
CPU CORE MICOM 3V
CPU CORE ( TBD A )
1.05V (VCCP)
2.2 A Diamondville 3.3V
0.75 A (TBD)
Thermal
3.3V
0.08 A (TBD)
0.08 A (TBD)
KBC
1.05V ( TBD A ) 2.5 A Sensor
1.5V ( TBD A )
1.5V
0.13 A ( 2.5 W )
2.5V ( TBD A )
3.3V ( TBD A ) MICOM 3V
5.0V ( TBD A )
0.1 A (TBD) PWR LED
1.05V (MCH CORE)
1.8V_AUX ( TBD A ) 3.72 A
ms nti
2.5V
0.9V( TBD A )
1.5V
0.14 A Calistoga
0.78 A
GMCH 3.3V
0.25 A (TBD) CLOCK
VGA CORE (TBD A)
VDC INV ( TBD A )
C 3.3V 0.16 A C
1.8V_AUX (4 W )
PEX IO (TBD A)
8. Block Diagram and Schematic
RTC_Battery
3.3V
0.2 A (TBD) KeyBoard 3.3V_AUX
0.6 A (TBD) LAN
1.05V
0.95 A
Sa de
1.5V
3.3V
1.6A ICH7-M 3.3V KBD LED
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
23-0) CPU1_CPURST*
KBC 8-1) P3.3V_AUX 14-1) P3.3V
15-1) P2.5V 15-1) P2.5V
15-0) KBC3_PWRON 14-2) P1.5V 14-2) P1.5V
Sa de
23-0) PLT3_RST*
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
15-0) KBC3_VRON
GMCH
8-3) P1.5V 14-3) P0.9V
nfi
P1.5V_AUX & VCCP
PAGE 26
Thermal 15-2) VCCP 15-2) VCCP
Monitor SC415 16-0) VCCP_PWRGD
PAGE 9
PAGE 41
P5V_AUX & P3V_AUX
4-0) KBC3_SUSPWR 5-1)P5V_AUX
4-1) P3.3V_LAN TPS51120 2-1) P5.0V_ALW
DDR2 POWER 8-2) P1.8V_AUX 8-2) P1.8V_AUX
DDR2
Co
(2) SC486
13-1) P0.9V 14-3) P0.9V
B
PAGE 40
13-1) MEM_VREF 13-1) MEM_VREF Memory B
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PAGE 40
22-0) PLT3_RST#
6-1) P5V_AUX 14-2) P3.3V MINI PCIE
14-1)P5V
14-0) KBC3_PWRON SI3433 14-2) P1.5V Devices
PAGE 44
4-1) P3.3V_AUX 5-1) P3.3V_AUX
14-2) P3.3V
14-0) KBC3_PWRON SI3433 14-1)P5V AUDIO
PAGE 44
4-3) P1.2V_LAN
BCP69-16
5-1) P3.3V_AUX AMP
88E8057 PAGE 28 15-0) KBC3_PWRON
MIC5219 15-1) P2.5V
GIGABIT TRANSFORMER 15-2) 1.5V_PWRGD
LFE9261 PAGE 44
14-2) P5.0V
PAGE 27 4-2) P1.8V_P2.5V_LAN
PAGE 29 HDD
A A
SAMSUNG
ELECTRONICS
4 3 2 1
8-6
8-7
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
CLOCK DISTRIBUTION
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
CLK0_HCLK0
CPU
1205-002574
D CLK0_HCLK0# D
133 MHz
CLK0_HCLK1
CLK1_MCLK0/0#
133 MHz CLK0_HCLK1#
CLK1_MCH3GPLL CLK1_MCLK1/1# SODIMM
g
133 MHz CLK1_MCH3GPLL#
CLK1_DREFSSCLK GMCH 533 MHz
un al
133 MHz CLK1_DREFSSCLK#
CLK1_DREFCLK
96 MHz CLK1_DREFCLK#
CLK1_PCIEICH
ms nti
CLOCK GENERATOR
HDA3_AUD_BCLK
133 MHz CLK1_PCIEICH# AUDIO CODEC
C
12.288 MHz C
33 MHz CLK3_PCLKICH
8. Block Diagram and Schematic
IDTCV179BNLG
CLK3_USB48
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
12 MHz AU6371
CK-505M
CLK1_SATA
100 MHz CLK1_SATA#
nfi
CLK1_MINIPCIE
100 MHz CLK1_MINIPCIE# MINI PCIE(WLAN)
CLK1_MIN3PCIE
100 MHz CLK1_MIN3PCIE#
MINI PCIE(HSDPA)
Co
B B
33 MHz CLK3_PCLKMICOM KBC5_TCLK TOUCHPAD
KBC
32.768KHz KBC3_SMCLK
BATTERY
10V
10V
10V
10V
10V
10000nF-X5R
10000nF-X5R
10000nF-X5R
10000nF-X5R
6.3V
6.3V
100nF
100nF
100nF
100nF
100nF
0 1 0 200 MHz
0 1 1 400 MHz
10V
10V
10V
10V
10V
10V
C518
C515
C517
C17
C15
C21
C511
C514
C519
C516
1 0 0 133 MHz
4700nF-X5R
4700nF-X5R
g
1 0 1 100 MHz
6.3V
6.3V
100nF
100nF
100nF
100nF
100nF
100nF
For EMI
1 1 0 166 MHz P3.3V
1 1 1 RSVD
C543
C513
C18
C22
C20
C16
C542
un al
C512
C19
0.012nF
50V
1%
1%
U501
nostuff IDTCV179BNLG
nostuff
10K
10K
19 4
VDD_IO VDD_REF
33 16
VDD_SRC_IO1 VDD_48
43 9
VDD_SRC_IO2 VDD_PCI
52 23
VDD_SRC_IO3 VDD_PLL3
56
ms nti
R537
R539
CLK3_USB48 R541 22.6 1% 27
VDD_CPU_IO
46
VDD_PLL3_IO VDD_SRC
R543 2.2K 62
CLK1_BSEL0 R529 1K 1% 55
VDD_CPU
CLK1_BSEL1 NC
C CLK1_BSEL2 R531 10K 1%
CPU0
61
CLK0_HCLK0 C
CLK3_48MHZ_R 17 60
8. Block Diagram and Schematic
R534 33 1% 64
USB_FS_A CPU0# CLK0_HCLK0#
CLK3_ICH14 5
FSB_TESTMODE
58
CRB : 22 ohm REF_FS_C_TEST_SEL CPU1_MCH
57 CLK0_HCLK1
CLK3_14MHZ_R CPU1_MCH# CLK0_HCLK1#
44 HD_DEC
CHP3_CPUSTP# CPUSTOP#
45 40 R513 475 1%
CHP3_PCISTP# PCISTOP# SRC11_CLKREQH# CHP3_HD_CLKREQ#
39 R514 475 1%
Sa de
63
SRC11#_CLKREQG# LOM3_CLKREQ#
VRM3_CPU_PWRGD CLKPWRGD_PWRDN#
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
41
CLK3_PCIF_R SRC10 CLK1_PCIEHD
R542 22.6 1% 14 42
CLK3_PCLKICH PCIF_5_ITP_EN SRC10# CLK1_PCIEHD#
R538 22.6 1% CLK3_PCI4_R 13 37
CLK3_DBGLPC PCI_4_SEL_LCDCLK# SRC9
38
CLK1_PCIELOM
12
SRC9# CLK1_PCIELOM#
PCI_3
nfi
54
R535 22.6 1% CLK3_PCI2_R 11
SRC8_ITP
53 CLK1_MINI3PCIE
CLK3_PCLKMICOM PCI_2 SRC8#_ITP# CLK1_MINI3PCIE#
10 51 R511 475 1%
PCI_1_CLKREQ_B# SRC7_CLKREQF# EXP3_CLKREQ#
SRC7#_CLKREQE#
50 R512 475 1%
MIN3_CLKREQ#
8
PCI_0_CLKREQ_A#
48
7
SRC6
47
CLK1_MINIPCIE
SMB3_CLK_S 6
SCL SRC6# CLK1_MINIPCIE#
SMB3_DATA_S SDA
34
3
SRC4
35 CLK1_MCH3GPLL
2
XTAL_IN SRC4# CLK1_MCH3GPLL#
XTAL_OUT
Co
31
1%
1%
SRC3_CLKREQC# CLK1_PCIEICH
50V
50V
50V
18 32
B 59
VSS_48 SRC3#_CLKREQD# CLK1_PCIEICH# B
VSS_CPU
10K
10K
22 28
VSS_IO SRC2 CLK1_SATA
0.033nF
0.033nF
0.033nF
15 29
CLK1_SATA#
2
VSS_PCI SRC2#
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26
VSS_PLL3
1 24
THERM_GND
2801-004518
30
VSS_REF LCDCLK_27M
25
CLK1_DREFSSCLK
R536
R540
Y501 VSS_SRC1 LCDCLK#_27M_SS CLK1_DREFSSCLK#
36
C540
C541
C544
C539 14.31818MHz VSS_SRC2
C538 49 20
0.018nF 0.018nF
VSS_SRC3 SRC0_DOT96
21 CLK1_DREFCLK
50V 50V For EMI SRC0#_DOT96# CLK1_DREFCLK#
1205-003159
65
CLK REQ DEVICE SRC PORT This part is 64pin QFN package.
Place 14.318MHz within
CLK REQ A SATA SRC2
500mils of CK-505
CLK REQ B GMCH SRC4
P1.05V
CLK REQ E MINI CARD SRC6
CLK REQ F LOM3_CLKREQ# SRC8 nostuff
1%
1%
1%
1K
1K
1K
nostuff
nostuff
SEL_LCDCLK* Pin 20/21 Pin 24/25
LOW DOT_96/DOT_96# PEG_CLK/PEG_CLK#
R544
R528
R530
SMT1 0-1005
CPU1_BSEL0 SMT2 0-1005 CLK1_BSEL0
A HIGH SRC_0/SRC_0# 27M & 27M_SS CPU1_BSEL1 CLK1_BSEL1 A
SMT3 0-1005
CPU1_BSEL2 CLK1_BSEL2
0
CPU Freq. CRB Test Option SAMSUNG
all series 0 ohms (Stuff)
R532
CPU_SEL ELECTRONICS
nostuff
166 MHz all series 0 ohms (No Stuff), BSEL2 : 0 ohm to GND
4 3 2 1
8-8
8-9
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D
THERMAL SENSOR & FAN CONTROL D
P5.0V P3.3V_AUX P3.3V
g
R679
10K 1%
10K 1%
10K 1%
un al
49.9
1%
C612 C614
10000nF-X5R
6.3V
100nF C615
10V 100nF
10V
R659
R657
R660
U507
G7923
P3.3V_AUX 1 18
ms nti
21
VCCS SDA
20 KBC3_THERM_SMDATA
23
DVCC_1 SCL KBC3_THERM_SMCLK
DVCC_2
16
THM3_ALERT#
10K
ALERT#
1%
1%
10K
C P3.3V_AUX KBC3_PWRGD
12
POWER_OK C
14 3
RESET# DXP1 CPU2_THERMDA
8. Block Diagram and Schematic
SGND1
2 C616
R665 24 2.2nF
FAN3_FDBACK# 22
FG1
5 50V CPU2_THERMDC
R664
300K
R668
1%
FAN5_VDD FAN1 DXP2
4
9
SGND2 10mil width and 10mil spacing.
THERM_SET
10 7
Sa de
THM3_STP# 11
THERM# DXP3
6
R666 CPU3_THRMTRIP# THERMTRIP# SGND3 3
- This Document can not be used without Samsung's authorization -
P3.3V
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
249K
1% R663 2M 1/16W 13 8 C580 1 Q512
X2 NC_1 MMBT3904
19 2.2nF
R662 10M 15
NC_2
17 50V
CLK DGND 2
25 R658
Y503 THERMAL
R667 TRIP_SET 1500 : 95 dgree 0.032768MHz Line Width = 20 mil 10K
nfi
0 nostuff 0251706300 Opposite side of CPU. 1%
nostuff 1 4 J13
nostuff HDR-4P-SMD
2 3
nostuff
FAN5_VDD 1
SMBUS Address 7Ah 2
FAN3_FDBACK# 3
C617 4
0.02nF 5
MNT1
50V 6
C613 MNT2
10000nF-X5R
6.3V
3711-000922
Angle Type
Co
B B
P1.05V
R681
ICH
LCD1_ADATA1 50V N27
LVD_A_DATAM_1 LINT10
E5
CPU1_NMI C
8. Block Diagram and Schematic
LVDS
LCTLA_CLK THERMTRIP_B
K25 68
LCTLB_CLK
K23
LCD3_EDID_CLK LDDC_CLK
nfi
K24
LCD3_EDID_DATA H26
LDDC_DATA P1.05V
LCD3_VDDEN LVDD_EN
C18
PROCHOT_B
W1
CPUPWRGOOD CPU1_PWRGD
R122
1K
A13 1%
GTLREF
H27
VSS_154
C109 C108
R124
0.22nF 1000nF-X5R 2K
L6 50V 6.3V 1%
RSVD_9 nostuff
E17
RSVD_6
Co
G11
BPM_1B_0
E15 H10
BPM_1B_1 BCLKN CLK0_HCLK0#
B G13
BPM_1B_2 BCLKP
J10
CLK0_HCLK0
B
F13
BPM_1B_3
K5
BSEL_0 CPU1_BSEL0
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B18 H5
BPM_2_0#_RSVD BSEL_1 CPU1_BSEL1
CPU
B20 K6
C20
BPM_2_1#_RSVD BSEL_2 CPU1_BSEL2
B21
BPM_2_2#_RSVD
H30
CPU1_VID(6:0)
BPM_2_3#_RSVD VID_0
H29
P1.05V VID_1
H28
nostuff VID_2
G30
R653 51 VID_3
G5 G29
RSVD_7 VID_4
R119 51 D14
TDI VID_5
F29
R123 51 D13
TDO VID_6
E29 nostuff nostuff
R120 51 B14
TCK nostuff
R121 51 C14 L7 nostuff
TMS RSVD_10
R645 51 C16
TRST_B RSVD_5
D20
H13
RSVD_8
D18
RSVD_4
D30
CPU2_THERMDA E30
THRMDA_1
K9
CPU2_THERMDC THRMDC_1 RSVD_TP_2 R116 R647 R115 R652
D19 1K 1K 1K 1K
RSVD_TP_1
K7 1% 1% 1% 1%
EXTBGREF
C30
RSVD_C30 P1.05V
D31
RSVD_D31
near HDD connector near FAN
0223205900
A R651 A
M502 M503 976
HEAD HEAD 1/10W
DIA DIA
LENGTH
BA61-01090A
LENGTH
BA61-01090A
R650
SAMSUNG
C594
1000nF-X5R 3.3K ELECTRONICS
6.3V Intel : 3.32K ohm
4 3 2 1
8-10
8-11
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG. PINEVIEW(2/3)
U5-2
MEM1_AMA(0:14)
PINEVIEW 2/5 MEM1_ADQS(7:0)
AH19 AD3
D AJ18
DDR_A_MA_0 DDR_A_DQS_0
AB8
D
DDR_A_MA_1 DDR_A_DQS_1
AK18 AD8
DDR_A_MA_2 DDR_A_DQS_2
AK16 AK5
DDR_A_MA_3 DDR_A_DQS_3
AJ14 AG22
AH14
DDR_A_MA_4
DDR_A_MA_5
DDR_A_DQS_4
DDR_A_DQS_5
AE26 U5-3
AK14 AE30
AJ12
DDR_A_MA_6
DDR_A_MA_7
DDR_A_DQS_6
DDR_A_DQS_7
AB27 PINEVIEW 3/5
AH13 D12
DDR_A_MA_8 MEM1_ADQS#(7:0) XDP_RSVD_00
AK12
DDR_A_MA_9 DDR_A_DQSB_0
AD2 A7
XDP_RSVD_01 CRT_HSYNC
M30 R137 10
CRT3_HSYNC
AK20 AD7 D6 M29 R136 10
g
AH12
DDR_A_MA_10 DDR_A_DQSB_1
AD10 C5
XDP_RSVD_02 CRT_VSYNC CRT3_VSYNC
DDR_A_MA_11 DDR_A_DQSB_2 XDP_RSVD_03
AJ11 AK3 C7
DDR_A_MA_12 DDR_A_DQSB_3 XDP_RSVD_04
AJ24 AG21 R133 1K C6 N31
AJ10
DDR_A_MA_13 DDR_A_DQSB_4
AG27 D8
XDP_RSVD_05 CRT_RED
P30
CRT3_RED
DDR_A_MA_14 DDR_A_DQSB_5 nostuff 1% XDP_RSVD_06 CRT_GREEN CRT3_GREEN
AF29 B7 P29
un al
AK22
DDR_A_DQSB_6
AA27 A9
XDP_RSVD_07 CRT_BLUE
N30
CRT3_BLUE
MEM1_AWE# DDR_A_WEB DDR_A_DQSB_7 XDP_RSVD_08 CRT_IRTN
AJ22 R134 1K D9
MEM1_ACAS# AK21
DDR_A_CASB MEM1_ADM(7:0) C8
XDP_RSVD_09
VGA
AD4 1%
MEM1_ARAS# DDR_A_RASB DDR_A_DM_0 XDP_RSVD_10
AA9 R132 1K B8
XDP_RSVD_11
AJ20 DDR_A_DM_1 C10 L30 P3.3V
AE8 nostuff 1%
MEM1_ABS0 AH20
DDR_A_BS_0 DDR_A_DM_2
D10
XDP_RSVD_12 CRT_DDC_CLK
L31
CRT3_DDCCLK
AJ3
MEM1_ABS1 AK11
DDR_A_BS_1 DDR_A_DM_3
B11
XDP_RSVD_13 CRT_DDC_DATA CRT3_DDCDATA
AD19
MEM1_ABS2 DDR_A_BS_2 DDR_A_DM_4
B10
XDP_RSVD_14
P28R642 665 1%
AJ27 XDP_RSVD_15 DAC_IREF
DDR_A_DM_5
AF30 B12
ms nti
DDR_A_DM_6 XDP_RSVD_16
10K
10K
AB26 R125 1K C11 Y30
DDR_A_DM_7 XDP_RSVD_17 DPL_REFCLKINP
Y29
CLK1_DREFCLK
MEM1_ADQ(63:0) nostuff 1% DPL_REFCLKINN CLK1_DREFCLK#
AH22 AC4 AA30
MEM1_CS0# AK25
DDR_A_CSB_0 DDR_A_DQ_0
AC1
DPL_REFSSCLKINP
AA31
CLK1_DREFSSCLK
C MEM1_CS1# DDR_A_CSB_1 DDR_A_DQ_1 DPL_REFSSCLKINN CLK1_DREFSSCLK# C
R139
R138
AJ21 AF4 L11
DDR_A_CSB_2 DDR_A_DQ_2 RSVD_11
8. Block Diagram and Schematic
AJ25 AG2
DDR_A_CSB_3 DDR_A_DQ_3
AB2
AH10
DDR_A_DQ_4
AB3 K29 CHP3_DPRSLPVR
MEM1_CKE0 DDR_A_CKE_0 DDR_A_DQ_5
AE2
PM_EXTTS#_1_DPRSLPVR
J30
AH9
MEM1_CKE1 DDR_A_CKE_1 DDR_A_DQ_6
AE3
PM_EXTTS#_0
L5
MCH3_EXTTS0#
AK10
DDR_A_CKE_2 DDR_A_DQ_7
AB6
PWROK
AA3
KBC3_PWRGD
AJ8
Sa de
DDR_A_CKE_3 DDR_A_DQ_8
AB7
RSTINB PLT3_RST#
DDR_A_DQ_9
- This Document can not be used without Samsung's authorization -
AK24 AE5 W8
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
MEM1_ODT0 AH26
DDR_A_ODT_0 DDR_A_DQ_10
AG5
HPL_CLKINN
W9
CLK0_HCLK1#
MEM1_ODT1 DDR_A_ODT_1 DDR_A_DQ_11 HPL_CLKINP CLK0_HCLK1
MISC
AH24 AA5
DDR_A_ODT_2 DDR_A_DQ_12
AK27 AB5 AA7
DDR_A_ODT_3 DDR_A_DQ_13 RSVD_TP_11
AB9 AA6
DDR_A_DQ_14 RSVD_TP_10
AD6 R5
DDR_A_DQ_15 RSVD_TP_5
nfi
AG8 R6
DDR_A_DQ_16 RSVD_TP_6
AG15 AG7
CLK1_MCLK0 AF15
DDR_A_CK_0 DDR_A_DQ_17
AF10 AA21
CLK1_MCLK0# AD13
DDR_A_CKB_0 DDR_A_DQ_18
AG11 W21
RSVD_TP_12
CLK1_MCLK1 AC13
DDR_A_CK_1 DDR_A_DQ_19
AF7 T21
RSVD_TP_9
CLK1_MCLK1# DDR_A_CKB_1 DDR_A_DQ_20
AF8 V21
RSVD_TP_7
DDR_A_DQ_21 RSVD_TP_8
AC15 AD11
DDR_A_CK_3 DDR_A_DQ_22
AD15 AE10 0223205900
DDR_A_CKB_3 DDR_A_DQ_23
AF13 AH1
DDR_A_CK_4 DDR_A_DQ_24
AG13 AJ2
DDR_A_CKB_4 DDR_A_DQ_25
AK6
DDR_A_DQ_26
AJ7
DDR_A_DQ_27
Co
AF3
DDR_A_DQ_28
AH2
DDR_A_DQ_29
B AD17
RSVD_AD17 DDR_A_DQ_30
AL5 B
AC17 AJ6
RSVD_AC17 DDR_A_DQ_31
AB15 AE19
P1.8V_AUX RSVD_AB15 DDR_A_DQ_32
AB17 AG19
RSVD_AB17 DDR_A_DQ_33
AF22
DDR_A_DQ_34
AD22
CRT3_BLUE
DDR_A_DQ_35
AG17
CRT3_GREEN
ES1 : Pull-up to +SM R673 DDR_A_DQ_36 CRT3_RED
0.012nF
10K AF19
0.012nF
DDR_A_DQ_37
0.012nF
150
P1.8V_AUX
1%
150
(WW10) AE21
1%
50V
150
DDR_A_DQ_38
50V
1%
50V
AB4 AD21
VSS_153 DDR_A_DQ_39
AK8 AE24
RSVD_14 DDR_A_DQ_40
R671 R672 AG25
C582
C581
C583
DDR_A_DQ_41
R641
R639
R640
nostuff AD25
10K 0
PINEVIEW
VSS_0
VSS_1
5/5
VSS_72
VSS_73
F24
F28
A19 F4
VSS_2 VSS_74
A29 G15
RSVD_NCTF_0 VSS_75
A3 G17
U5-4 A30
RSVD_NCTF_1
RSVD_NCTF_2
VSS_76
VSS_77
G22
CPU_CORE A4 G27
D PINEVIEW 4/5 AA13
RSVD_NCTF_3
VSS_3
VSS_78
VSS_79
G31
D
A23 AA14 H11
VCC_0 VSS_4 VSS_80
A25 C586 C588 C572 C591 AA16 H15
GFX_CORE C589 C587 VCC_1 VSS_5 VSS_81
C598 VCC_2
A27 6.3V 6.3V 6.3V 6.3V
AA18
VSS_6 VSS_82
H2
6.3V 6.3V 6.3V B23 AA2 H21
1000nF-X5R 1000nF-X5R 1000nF-X5R VCC_3 1000nF-X7R 1000nF-X7R 1000nF-X7R 1000nF-X7R VSS_7 VSS_83
T13 B24 AA22 H25
VCCGFX_0 VCC_4 VSS_8 VSS_84
T14 B25 AA25 H8
C602 T16
VCCGFX_1 VCC_5
B26 AA26
VSS_9 VSS_85
J11
6.3V VCCGFX_2 VCC_6 VSS_10 VSS_86
22000nF-X5R
20% T18 B27 AA29 J13
VCCGFX_3 VCC_7 VSS_11 VSS_87
CFX/MCH
GND
AK13 J19 AE22 N1
8. Block Diagram and Schematic
L19 AG3 N8
POWER
VCC_36 VSS_40 VSS_116
L21 AH18 P13
P1.8V_AUX VCC_37 VSS_41 VSS_117
DDR
WWW.AliSaler.Com
B13 W2
C621 C620 D4 +VCCPC6 B16
VSS_54 VSS_139
W23
100nF 100nF VCC VSS_55 VSS_140
B19 W25
10V 10V
P1.05V VSS_56 VSS_141
VCCP_0
B4 C595 B22
VSS_57 VSS_142
W26
P1.8V B3 100nF P1.8V B30 W28
VCCP_1 BLM18PG181SN1 RSVD_NCTF_13 VSS_143
AA19 10V B31 W30
VCCD_AB_DPL RSVD_NCTF_14 VSS_144
B514 B5 W4
V11
nostuff C618 C619 B9
VSS_58 VSS_145
W5
C138 C120 VCCD_HMPLL 22000nF-X5R 1000nF-X5R
C1
VSS_59 VSS_146
W6
20%
LVDS
1000nF-X5R 1000nF-X5R 6.3V RSVD_NCTF_15 VSS_147
AC31 V30 6.3V C12 W7
6.3V 6.3V
P1.8V VCCSFR_AB_DPL VCCALVD VSS_60 VSS_148
W31 C21 Y28
VCCDLVD VSS_61 VSS_149
EXP/CRT/PLL
BLM18PG181SN1 C22 Y3
VSS_62 VSS_150
C584 T30
VCCACRTDAC
C25
VSS_63 VSS_151
Y4
B512 1000nF-X5R C31
P3.3V P1.05V RSVD_NCTF_16
6.3V D22
P1.05V +VCCA_DMI VSS_64
T31 T1 E1
VCC_GIO VCCA_DMI_0 RSVD_NCTF_17
J31 T2 E10
C3
VCCRING_EAST VCCA_DMI_1
T3 C601 C597 E19
VSS_65
DMI
C585 P1.05V B2
VCCRING_WEST_0 VCCA_DMI_2 6.3V 6.3V
E21
VSS_66
VCCRING_WEST_1 1000nF-X5R 1000nF-X5R VSS_67
6.3V
1000nF-X5R C2 P2 +VCCAPLL_DMI P1.8V E25 T29
VCCRING_WEST_2 RSVD_12 VSS_68 VSS_152
A21 AA1 +VCCSFR_DMIHMPLL E8
VCC_LGI_VID VCCSFR_DMIHMPLL VSS_69
F17
C596 C623 P1.05V E2 +VCC_RING F19
VSS_70
6.3V 6.3V VCCP VSS_71
1000nF-X5R 1000nF-X5R
C628 C600
A 0223205900 6.3V 22000nF-X5R 0223205900 A
1000nF-X5R 20%
P1.05V 6.3V
C576
1000nF-X5R
6.3V
nostuff
SAMSUNG
nostuff ELECTRONICS
4 3 2 1
8-12
8-13
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
Tigerpoint (1/3)
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG. U506-1 U506-2
TIGERPOINT 1/5 NON_HSDPA TIGERPOINT 2/5
R23 H7 NON_HSDPA R12 AE6 C574 10nF 25V
DMI1_RXN0 DMI0RXN USBP0N USB3_P0- RSVD_3 SATA0RXN SAT1_HDD_RXN0
R24 H6 AE20 AD6 C573 10nF 25V
DMI1_RXP0 P21
DMI0RXP USBP0P
H3 USB3_P0+ R28 0 AD17
RSVD_4 SATA0RXP
AC7 C575 10nF 25V
SAT1_HDD_RXP0
DMI1_TXN0 DMI0TXN USBP1N USB3_TSP- R31 0 USB3_MINIPCIE1- RSVD_5 SATA0TXN SAT1_HDD_TXN0
D DMI1_TXP0
P20
DMI0TXP USBP1P
H2
USB3_TSP+ USB3_MINIPCIE1+
AC15
RSVD_6 SATA0TXP
AD7 C577 10nF 25V
SAT1_HDD_TXP0 D
T21 J2 AD18 AE8
DMI1_RXN1 T20
DMI1RXN USBP2N
J3
USB3_P2- Y12
RSVD_7 SATA1RXN
AD8
DMI1_RXP1 T24
DMI1RXP USBP2P
K6
USB3_P2+ R546 0 AA10
RSVD_8 SATA1RXP
AD9
DMI1_TXN1 T25
DMI1TXN USBP3N
K5 R545 0 USB3_MINIPCIE2- AA12
RSVD_9 SATA1TXN
AC9
DMI1_TXP1 T19
DMI1TXP USBP3P
K1
USB3_MINIPCIE2+ Y10
RSVD_10 SATA1TXP
DMI
T18
DMI2RXN USBP4N
K2 USB3_MMC- HSDPA AD15
RSVD_11
USB3_MMC+
SATA
DMI2RXP USBP4P HSDPA RSVD_12
U23 L2 W10
U24
DMI2TXN USBP5N
L3
USB3_BLUETOOTH- V12
RSVD_13
V21
DMI2TXP USBP5P
M6
USB3_BLUETOOTH+ AE21
RSVD_14
V20
DMI3RXN USBP6N
M5
USB3_P6- AE18
RSVD_15
g
V24
DMI3RXP USBP6P
N1 USB3_P6+ AD19
RSVD_16
USB
V23
DMI3TXN USBP7N
N2
USB3_CAMERA- U12
RSVD_17 P3.3V
DMI3TXP USBP7P USB3_CAMERA+ RSVD_18
AD4
AC17
SATA_CLKN
AC4
CLK1_SATA#
D4 AB13
RSVD_19 SATA_CLKP CLK1_SATA
un al
OC0# RSVD_20 R636
K21 C5 AC13 AD11 R117 24.9 1%
10K
PEX1_MINIRXN1 K22
PERN1 OC1#
D3 P3.3V_AUX AB15
RSVD_21 SATARBIAS#
AC11
PEX1_MINIRXP1 C67 100nF 10V J23
PERP1 OC2#
D2 1K R587 Y14
RSVD_22 SATARBIAS
AD25
PEX1_MINITXN1 PETN1 OC3# RSVD_23 SATALED# CHP3_SATALED#
C66 100nF 10V J24 E5
PEX1_MINITXP1 M18
PETP1 OC4#
E6 AB16
PEX1_MINIRXN2 M19
PERN2 OC5#_GPIO29
C2 AE24
RSVD_24
PEX1_MINIRXP2 PERP2 OC6#_GPIO30 RSVD_25
C91 100nF 10V K24 C3 1K R588 AE23
PEX1_MINITXN2 PETN2 OC7#_GPIO31 RSVD_26
PEX1_MINITXP2 C93 100nF 10V K25
PETP2
L23
ms nti
PEX1_LAN_RXN3 L24
PERN3
AA14 U16
PEX1_LAN_RXP3 PERP3 R591 RSVD_27 A20GATE KBC3_A20G
C63 100nF 10V L22 G2 22.6 V14 Y20
PCI-E
HOST
PEX1_HD_TXN4 PETN4 RSVD_30 INIT# CPU1_INIT#
C90 100nF N24
10V AB10 AB24
PEX1_HD_TXP4 PETP4 F4 RSVD_31 INTR
Y22 CPU1_INTR
P1.5V HD_DEC CLK48 CLK3_USB48 R635 10K AD23
FERR#
T17
CPU1_FERR#
HD_DEC GPIO36 NMI CPU1_NMI
24.9 R100 H24 AC21
1% J22
DMI_ZCOMP nostuff
RCIN#
AA16
KBC3_RCIN#
Sa de
DMI_IRCOMP SERIRQ
AA21
CHP3_SERIRQ
SMI# CPU1_SMI#
- This Document can not be used without Samsung's authorization -
W23 V18
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
LAD2_FWH2 GPIO8
W8 H19
Y8
LAD3_FWH3 GPIO9
M17
CHP3_RFOFF_BT# nostuff
Y4
LDRQ0# GPIO10
A24 KBC3_EXTSMI# SMT7 0-1005 EMI request (10/30)
LPC3_LFRAME# LFRAME# GPIO12
C23
GPIO13 KBC3_WAKESCI#
R616 33 1% P6 P5 nostuff
HDA3_AUD_BCLK HDA_BIT_CLK GPIO14
HDA3_AUD_RST# R617 33 1% U2
HDA_RST# GPIO15
E24 nostuff 500 ohm close to IMVP
W2 AB20 R634 10 5% move to IMVP (Next : TBD)
g
HDA3_AUD_SDI0 HDA_SDIN0 DPRSLPVR CHP3_DPRSLPVR
AUDIO
V2 Y16 R505 10
HDA_SDIN1 STP_PCI# CHP3_PCISTP#
P8 AB19 R507 10
C565 R627 33 1% AA1
HDA_SDIN2 STP_CPU#
R3 CHP3_CPUSTP#
HDA3_AUD_SDO HDA_SDOUT GPIO24 CHP3_DBGSTRP P3.3V_AUX
0.022nF
HDA3_AUD_SYNC R626 33 1% Y1
HDA_SYNC GPIO25
C24 R599 1K nostuff
AA3 D19 R602 10K
un al
50V DMI AC Coupling mode
CLK3_ICH14 CLKT4 GPIO26 CHP3_MFGMODE#
GPIO27
D20
CHP3_COMMSTATUS# R614 10K
CHP3_DBGSTRP
U3 F22
for EMI EE_CS GPIO28 CHP3_MFGMODE#
EPROM
V3 AC1 1%
EE_SHCLK GPIO34
AC23
CHP3_HD_LOW_PWR#
GPIO38 CHP3_BOARDID0 nostuff
T4 AC24
P7
LAN_CLK GPIO39 CHP3_BOARDID1
LANR_STSYNC
B23 AB22
ms nti
AA2
LAN_RST# CPUPWRGD_GPIO49 CPU1_PWRGD
LAN_RXD0
AD1 AB17
LAN
LAN_TXD0 MCH_SYNC#
T7 E21 R814 10K
8. Block Diagram and Schematic
U4
LAN_TXD1 PWRBTN#
H23 KBC3_PWRBTN# P3.3V_AUX KBC3_PWRGD R629 10K
2
4
Y502
LAN_TXD2 RI#
G22
CHP3_RI# KBC3_RSMRST#
C566 W4
SUS_STAT#_LPCPD#
D22 CHP3_SUSSTAT#
0.007nF RTCX1 SUSCLK
3
V5 G18 PRTC_BAT
RTC
T5
RTCX2 SYS_RESET#
G23
ITP3_DBRRESET#
CHP3_RTCRST# RTCRST# PLTRSTB
C25 R601 1K
PLT3_RST_ORG#
Sa de
WAKE# P3.3V
E20 T8 R630 1M
SMB3_ALERT# SMBALERT#_GPIO11 INTRUDER#
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
H18 U10 1%
SMB3_CLK E23
SMBCLK PWROK
AC3
KBC3_PWRGD
SMB3_DATA SMBDATA RSMRST# KBC3_RSMRST#
SMB
H21 AD3 R631 330K
SMB3_LINKALERT# F25
SMLALERT# INTVRMEN
J16 5%
CHP3_SMLINK0 SMLINK0 SPKR AUD3_SPKR R813 R129 R128
F24 10K
CHP3_SMLINK1 SMLINK1
H20
10K 10K
SLP_S3# CHP3_SLPS3# nostuff nostuff nostuff
nfi
R2 E25
HST3_SPI_DO T1
SPI_MISO SLP_S4#
F21 CHP3_SLPS4# P3.3V_AUX CHP3_BOARDID2
HST3_SPI_DI M8
SPI_MOSI SLP_S5# CHP3_SLPS5# CHP3_BOARDID1
HST3_SPI_CS# P9
SPI_CS#
B25 R600 10K CHP3_BOARDID0
HST3_SPI_CLK
SPI
SPI_CLK BATLOW# Board ID Configuration
R4 AB23 R815
SPI_ARB DPRSTP#
AA18
CPU1_DPRSTP# R135 R131 Board ID
DPSLP# CPU1_DPSLP# 10K 10K 10K Model 2 1 0
F20
RSVD_32 Arcadia 0 1 1
DPRSTP : Daisy chain Layout rule Pontiac 0 1 0
0223215100 (From TPT to VRM to the processor) Kansas 0 0 1
P3.3V_AUX Bloomington 0 0 0
Lincoln (TBD) 1 0 0
Co
R84 10K
SMB3_LINKALERT#
CHP3_SMLINK0 R579 10K HSPA (TBD)
B R578 10K P3.3V B
CHP3_SMLINK1 P3.3V
R83 10K P3.3V_MICOM PRTC_BAT
SMB3_ALERT#
WWW.AliSaler.Com
SMB3_CLK R59 10K nostuff
R60 10K nostuff R29 R32
SMB3_DATA C721
2.2K 2.2K 1000nF-X5R
R85 10K RHU002N06 RTC Battery
G
1
1
CHP3_RI# R575 1K
nostuff
PEX3_WAKE# Q2
D513
BA39-00534A
3
D
S
R598 10K SMB3_CLK SMB3_CLK_S
BAT54C
2
KBC3_WAKESCI# BA39-00598A (New)
3
KBC3_EXTSMI# R68 10K R750
nostuff
G
RHU002N06 20K
2
1
J502 1%
Q3
R82 10K HDR-2P-SMD
S
ITP3_DBRRESET# SMB3_DATA SMB3_DATA_S R751 1K CHP3_RTCRST#
2
3
1
1%
2
R30 0 3
MNT1 C720
P3.3V R33 0
MNT2
4
1000nF-X5R R749 CMOS
MCH3_ICHSYNC#
R633 1K
25V 1M
1% RESET
R516 10K 3711-000541
CHP3_SERIRQ R517 10K Angle Type
nostuff
PCI3_CLKRUN# PLACE TO BOTTOM
P3.3V For Internet activity
ARROUND WIBRO DOOR
HDA3_AUD_SDO R625 1K nostuff
R624 1K nostuff R509
HDA3_AUD_SYNC
A 475 A
1% nostuff
R510 10K 1 S 2
SAMSUNG
CHP3_COMMSTATUS# -50V
P3.3V 1%
G
BSS84
Q503
R504 10K nostuff D 3 nostuff ELECTRONICS
CHP3_PCISTP#
R506 10K
CHP3_CPUSTP# TSP3_COMMSTATUS#
4 3 2 1
8-14
8-15
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
Tigerpoint (3/3)
D U506-5 D
TIGERPOINT
A1
VSS_0
5/5 VSS_1
A25
B6
VSS_2
B10
VSS_3
B16
VSS_4
B20
VSS_5
B24
g
VSS_6
E18
P3.3V P5.0V P3.3V_AUX P5.0V_AUX VSS_7
F16
VSS_8
G4
VSS_9
G8
VSS_10
H1
un al
3 3
1 2 1 2 VSS_11
R78 R615 H4
VSS_12
100 10 H5
VSS_13
BAT54A 1% BAT54A K4
VSS_14
D9 D505 K8
VSS_15
K11
U506-4 C59
1000nF-X5R
C567
100nF
VSS_16
VSS_17
K19
Intel default : 0 ohm (option : bead) K20
TIGERPOINT 6.3V 10V VSS_18
VSS_19
L4
F12 M7
ms nti
VCC5REF VSS_20
4/5 R818 0
nostuff P1.5V
VSS_21
M11
F5 N3
VCC5REF_SUS VSS_22
R817 0
VSS_23
N12
Y6 N13
C VCCSATAPLL PRTC_BAT C78 C75 VSS_24
N14
C
VSS_25
8. Block Diagram and Schematic
100nF 10000nF-X5R
AE3 N23
VCCRTC 10V 6.3V VSS_26
P11
VSS_27
VCCDMIPLL
Y25 C570 C571 VSS_28
P13
P1.5V 100nF 10nF P19
VSS_29
VCCUSBPLL
F6 R816 0 10V 25V
VSS_30
R14
R22
Sa de
PI recommend : keep these components VSS_31
C89 VSS_32
T2
- This Document can not be used without Samsung's authorization -
C87
POWER
V_CPU_IO VSS_33
25V 4700nF-X5R V1
Intel default : 0 ohm (option : bead) VSS_34
6.3V V7
VSS_35
M9 2012 V8
VCC1_5_1 nostuff P1.5V VSS_36
M20 V19
VCC1_5_2 VSS_37
N22 V22
VCC1_5_3 VSS_38
nfi
AA8 V25
VCC1_5_4 C82 C56 C81 C88 C86 VSS_39
W12
6.3V 6.3V 100nF 100nF VSS_40
6.3V W22
1000nF-X5R 1000nF-X5R 10000nF-X5R 10V 10V VSS_41
J10 Y2
VCC1_05_1 VSS_42
K17 Y24
VCC1_05_2 P1.05V VSS_43
P15 AB4
VCC1_05_3 VSS_44
V10 AB6
VCC1_05_4 VSS_45
AB7
C84 C85 C83 VSS_46
AB8
6.3V 6.3V VSS_47
F10 6.3V AC8
VCC3_3_1 10000nF-X5R 1000nF-X5R 1000nF-X5R VSS_48
G10 AD2
VCC3_3_2 P3.3V VSS_49
H25 AD10
VCC3_3_3 VSS_50
Co
R10 AD20
VCC3_3_4 VSS_51
T9 AD24
VCC3_3_5 VSS_52
B VCC3_3_6
AD13
C58 C57 C80 C79 C65 C107 C64 VSS_53
AE1 B
AE10
6.3V 6.3V 6.3V 100nF 100nF 6.3V 6.3V VSS_54
AE25
1000nF-X5R 1000nF-X5R 1000nF-X5R 10V 10V 1000nF-X5R 1000nF-X5R VSS_55
F1
VCCSUS3_3_1
F18
VCCSUS3_3_2 P3.3V_AUX
K7 G24
VCCSUS3_3_3 VSS_56
N4 nostuff nostuff AE13
VCCSUS3_3_4 VSS_57
F2
C76 C60 C77 C562 VSS_58
0223215100 100nF 6.3V 6.3V 6.3V
10V 1000nF-X5R 1000nF-X5R 10000nF-X5R AE16
RSVD_33
10K
4A INIT. ALL VIDEO BIOS ROM D8 SHUTDOWN ERROR
4C SHADOW VIDEO BIOS ROM DA EXTENDED BLOCK MOVE
Sa de
U505 50 DISPLAY CPU TYPE AND SPEED DC SHUTDOWN 10
- This Document can not be used without Samsung's authorization -
MX25L1605D
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
R577
KBC3_SPI_CS# CE* VDD 54 SET KEYCLICK IF ENABLED 90 INIT. HDD CONTROLLER
KBC3_SPI_DI 2 7 56 ENABLE KEYBOARD 91 INIT. LOCAL BUS HDD CONTROLLER
SO HOLD*
3 6 58 TEST FOR UNEXPECTED INTERRUPTS 92 JUMP TO USER PATCH 2
4
WP* SCK
5
KBC3_SPI_CLK
VSS SI KBC3_SPI_DO 5A DISPLAY " PRESS ...... SETUP" 94 DISABLE A20 ADDRESS LINE
5C TEST RAM GETWEEN 512K AND 640K 96 CLEAR HUGE ES SEGMENT REG.
nfi
1107-001709 60 TEST EXTENDED MEMORY 98 SEARCH FOR OPTION ROMS
62 TEST EXTENDED MEMORY ADDRESS LINE
C556 64 JUMP TO USER PATCH 1
100nF
10V
80H DECODER CONNECTOR
Co
B B
P3.3V
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PORT1
HDR-10P-1R-SMD
1
2
PLT3_RST# 3
CLK3_DBGLPC 4
LPC3_LFRAME# 5
LPC3_LAD(3) 6
LPC3_LAD(2) 7
LPC3_LAD(1) 8
LPC3_LAD(0) 9
10
11 MNT1
12
MNT2
3711-000386
A A
SAMSUNG
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4 3 2 1
8-16
8-17
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS DDR SO-DIMM #0
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DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D D
MEM1_ADQ(63:0) P1.8V_AUX
DDR2M1-2
DDR2-SODIMM-200P-STD
g
2/2
DDR2M1-1 112
VDD1 VSS16
18
DDR2-SODIMM-200P-STD 111 24
VDD2 VSS17
117 41
1/2 96
VDD3 VSS18
53
un al
MEM1_AMA(14:0) VDD4 VSS19
0 102 5 0 95 42
A0 DQ0 VDD5 VSS20
1 101 7 1 118 54
A1 DQ1 VDD6 VSS21
2 100 17 2 81 59
A2 DQ2 VDD7 VSS22
3 99 19 3 82 65
A3 DQ3 VDD8 VSS23
4 98 4 4 87 60
A4 DQ4 VDD9 VSS24
5 97 6 5 103 66
A5 DQ5 P3.3V VDD10 VSS25
6 94 14 6 88 127
A6 DQ6 VDD11 VSS26
7 92 16 7 104 139
A7 DQ7 VDD12 VSS27
8 93 23 8 128
ms nti
A8 DQ8 VSS28
9 91 25 9 199 145
A9 DQ9 P1.8V_AUX VDDSPD VSS29
10 105 35 10 165
11 90
A10_AP DQ10
37 11 C759 C760 83
VSS30
171
A11 DQ11 100nF NC1 VSS31
12 89 20 12 100nF 120 172
C 13 116
A12 DQ12
22 13
10V 10V 50
NC2 VSS32
177
C
A13 DQ13 R183 NC3 VSS33
8. Block Diagram and Schematic
110 46 21 10V 34
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
100nF
SN74AHCT1G125DCKR
10V
1
5
2 + 4 R167 40.2 1% MMBD4148
CRT3_VSYNC OE*
- CRT5_VSYNC D10 3
3
Sa de
1
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
BLM18PG181SN1
B2
nfi
C72
P3.3V P3.3V VCC_CRT CRT CONNECTOR 100nF
10V J8
DSUB-15-3R-F
L1 82nH 1
CRT3_RED 6
R174 R168
11
G
2.2K 2.2K
1
L3 82nH 2
CRT3_GREEN 7
CRT3_DDCDATA CRT5_DDCDATA
S
12
1%
2
1%
1%
L2 82nH 3
RHU002N06
Q13
CRT3_BLUE 8
Co
150
150
150
13
0.022nF
0.022nF
0.022nF
4
1
B C11 C28 C27 9 B
PGB1010603NR
D1
PGB1010603NR
D2
PGB1010603NR
D3
0.022nF 0.022nF 0.022nF 14
50V 50V 50V 5 16
R22
R42
R41
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50V 50V 50V 10 17
P3.3V P3.3V VCC_CRT
C12
C29
C30
15
nostuff
nostuff
nostuff
R165 R166 3701-001403
G
2.2K 2.2K
1
CRT5_DDCDATA
CRT3_DDCCLK CRT5_DDCCLK CRT5_DDCCLK
D
2
CRT5_HSYNC
3
RHU002N06
Q12
CRT5_VSYNC
50V 50V 50V 50V
0.033nF
0.033nF
0.27nF
0.27nF
C32
C51
C31
C33
Intel SR : HSYNC/VSYNC - 33 pF
A A
SAMSUNG
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SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
LCD_VDD3.3V P3.3V VDC_LED
D D
BLM18PG181SN1
P5.0V
C3 C5 P3.3V
1000nF-X5R
100nF
6.3V
10V
B510
C508 C534
g
5
100nF 100nF 1 +
10V 10V
KBC3_BKLTON
2 4 LCD3_BKLTON
LCD3_BKLTEN -
3 U502
un al
R523 R524 7SZ08
100K 100K
1% 1%
J5 P3.3V
SOCK-30P-2R-SMD-MNT
1 2
3 4 LCD3_BKLTON
2.2K
2.2K
LCD3_BRIT 5 6
ms nti
7 8
9 10 For EBL.
11 12 P5.0V_STB P3.3V_AUX LCD_VDD3.3V
13 14
R3
R2
C 15 16 Q502 C
LCD1_ACLK 17 18 LCD1_ADATA2 SI2315BDS-T1
8. Block Diagram and Schematic
3
200K
2
LCD1_ADATA1 21 22 LCD1_ADATA0 1%
D
S
LCD1_ADATA1# 23 24 LCD1_ADATA0#
1
25 26 LCD3_EDID_CLK C2
G
C505
27 28 LCD3_EDID_DATA U1 330nF
100nF
Sa de
29 30 51.1K 1% 10V
31
MNT1
- This Document can not be used without Samsung's authorization -
32
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
MNT2
D 3
3710-002498 Q1
1 4 R5 10K G RHU002N06
USB3_CAMERA- LCD3_VDDEN 1%
USB3_CAMERA+ 1
nfi
S 2
2 3 R4
100K
1%
B501
EXC24CE900U
VDC
Q506 VDC_LED
Co
SI2307BDS-T1-E3
B B
3
2
D
S
R522
1
C550 C531
G
150K 100nF 100nF
C533
1% 25V 25V
1000nF-X5R
25V
R526
LCD_VDD3.3V P3.3V 51.1K when VDC is source : R53 = 43.2Kohm
1% when P5.0V is source : R53 = 0ohm
nostuff
R810 10K
K8
NC_4 DDR_ODT HDV1_DDR_ODT HDV1_DDR_UDQS# UDQS* A0
M3
C756 C753 H9
NC_5
L5
HDV1_DDR_DQ(0:15) F3
A1
M7
4700nF-X5R 100nF
A8
NC_6 DDR_DQ15
M2 HDV1_DDR_LDM F7
LDM A2
N2
HD_DEC 6.3V 10V NC_7 DDR_DQ14 HDV1_DDR_LDQS LDQS A3
K3 E8 N8
B10
DDR_DQ13
M6
HDV1_DDR_LDQS# LDQS* A4
N3
P3.3V P3.3V REG_VDD33 DDR_DQ12 A5
B9 L2 K7 N7
Sa de
REG_OUT_2P5 DDR_DQ11
M4
HDV1_DDR_RAS L7
RAS* A6
P2
DDR_DQ10 HDV1_DDR_CAS CAS* A7
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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H8 need to change
C9 B1
C709 VSSQ_10
VDDO_OTP VSS_0 100nF
VSS_1
B11 10V
J7
VSSDL
DDR2 800 512Mb
P1.8V A3 C4 HD_DEC
DDRV_0 VSS_2
A5 C6 1105-001931
DDRV_1 VSS_3
A7 C8
DDRV_2 VSS_4 HD_DEC
D1 E3
DDRV_3 VSS_5
F1 E5
DDRV_4 VSS_6
H1 E8
DDRV_5 VSS_7
K1 E10
DDRV_6 VSS_8
M3 F6
M5
DDRV_7 VSS_9
F7
HDV1_DDR_CLK
P1.2V DDRV_8 VSS_10
M7 G3 R741
DDRV_9 VSS_11
G6 121
VSS_12 HD_DEC
E6 G7 1%
VDDC_0 VSS_13
E7 G10
F5
VDDC_1 VSS_14
H5
HDV1_DDR_CLK#
VDDC_2 VSS_15 P1.8V
F8 H8
VDDC_3 VSS_16
G5 J3
VDDC_4 VSS_17
G8 J10
VDDC_5 VSS_18
H6 K4 R710
VDDC_6 VSS_19
H7 K6 4.7K
VDDC_7 VSS_20
L7 1%
VSS_21
L9 HD_DEC HD_DEC
HD_DEC HD_DEC HD_DEC HD_DEC HD_DEC HD_DEC VSS_22 HD_DEC
L11
A VSS_23
M1
HDV1_DDR_VREF A
P1.8V P1.2V P3.3V VSS_24 C706 C708
HD_DEC HD_DEC HD_DEC HD_DEC
R709 4700nF-X5R 100nF
0251320600 4.7K
HD_DEC 1%
6.3V 10V
SAMSUNG
C755 C667 C704 C750 C702 C705 C748 C752 C747 C749 C751 C791 C790 C789
4700nF-X5R 100nF 100nF 100nF 100nF 100nF 4700nF-X5R 100nF 100nF 100nF 100nF 4700nF-X5R 100nF 100nF HD_DEC ELECTRONICS
6.3V 10V 10V 10V 10V 10V 6.3V 10V 10V 10V 10V 6.3V 10V 10V
HD_DEC HD_DEC HD_DEC HD_DEC
4 3 2 1
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SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS P5.0V_AUD
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D508
BAV99LT1
70V
Codec Pin9 Setting
2 1
S/B with Low Voltage IO S/B without Low Voltage IO 3 D507
BAV99LT1
D Pin9 : 1.5V Pin9 : 3.3V Do not make a test point in these nets 70V D
P3.3V 2 1
3 D511
BAV99LT1
70V
B520
BLM18PG181SN1 2 1
B522 3 D512
D510 BAV99LT1
R716
C151 C677
1%
GPIO1_DMIC_CLK
1% 22 AUD5_MIC1_RIGHT_C_MN C153 1000nF-X5R 6.3V R159 1K 1%
D509
BAT54A
30V
C 4
MIC1_R_B
21 AUD5_MIC1_LEFT_C_MN C154 1000nF-X5R 6.3V R160 1K 1%
AUD5_MIC1_RIGHT C
AUD3_PD# AUD3_PD# AUD5_MIC1_LEFT
3
PD# MIC1_L_B
8. Block Diagram and Schematic
1% 39.2K R157 18 29
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
SHORT50
13 12
INSTPAR
GND3 NC
R147 R148 20
C C128 C133
C136
C137
GND4
21
C
0 1K
8. Block Diagram and Schematic
470nF THERM
47nF 100nF 47nF
WOOFER 16V
50V 10V 50V 1201-001991
5.5V
nostuff nostuff
WOOFER
Sa de
WOOFER WOOFER WOOFER
- This Document can not be used without Samsung's authorization -
G_AUD
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
G_AUD G_AUD
nfi
P5.0V_AUD P5.0V_AMP
SHORT550
B4 J10
BLM18PG181SN1 HDR-2P-SMD
INSTPAR
SPK5_LFE_M 1
2
SHORT551 3
WOOFER MNT1
Co
B3 4
MNT2
BLM18PG181SN1
B SPK5_LFE_P 3711-000541 B
INSTPAR
C633 C634
10000nF-X5R 10000nF-X5R WOOFER C119 C118 WOOFER
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1000nF-X7R 1000nF-X7R
6.3V 6.3V
6.3V 6.3V
WOOFER
nostuff nostuff WOOFER
G_AUD G_AUD
Only for PONTIAC model
A A
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THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
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HEADPHONE
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
AUD5_SENS_HP# 5
BLM18PG181SN1
R711 56 AUD5_HP_RIGHT_R_MN B516 AUD5_HP_RIGHT_B_MN 4 R
AUD5_HP_O_RIGHT 3
D R712 56 AUD5_HP_LEFT_R_MN B517 AUD5_HP_LEFT_B_MN 6 L
D
AUD5_HP_O_LEFT 2
0.1nF 50V
0.1nF 50V
BLM18PG181SN1 1
G4
1nF
G3
G2
G1
JACK-PHONE-6P
C671
C673
50V
C672
J14
g
nostuff 3722-002903
nostuff
nostuff
G_AUD
un al
ms nti
MIC JACK
C C
AUD5_SENS_MIC#
8. Block Diagram and Schematic
5
B518 BLM18PG181SN1 4 R
AUD5_MIC1_RIGHT 3
C157 10nF 25V B519 BLM18PG181SN1 6 L
AUD5_MIC1_LEFT 2
Sa de
C632 10nF 25V 1
50V
50V
50V
- This Document can not be used without Samsung's authorization -
G4
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
0.1nF
0.1nF
0.1nF
G1
JACK-PHONE-6P
J16
nfi
C711
C710
C712
G_AUD
3722-002903
G_AUD
nostuff
nostuff
nostuff
Co
B B
AUD5_MIC2_VREF
Internal MIC
R744
4.7K
1%
MIC500
B524 SOM4013SL-G443-C1033
R158 1K 1% AUD5_MIC2_INT_J_MN 1
88E8040-A0-NNB2C000 3722-002841
4
PLT3_RST# 5
PERST#
10
MNT2
PEX3_WAKE# 42
WAKE#
9
MNT1
CLK1_PCIELOM 10V 43
REFCLKP LT500
Sa de
CLK1_PCIELOM# REFCLKN LFE8423 TRD1+
C14 100nF PEX1_LAN_RXP4_C_MN37 13 LAN3_MDI1P 1
PEX1_LAN_RXP3 PCIE_TXP RXP TRD1-
- This Document can not be used without Samsung's authorization -
C13
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
1K
1K
1K
1K
28
VPD_CLK P3.3V P3.3V_AUX
31
P3.3V_AUX VPD_DATA
R7
R10
R9
R8
7 9
VDDO_TTL1 VAUX_AVLBL
C36 C38 30
46
VDDO_TTL2
36
C504
100nF 100nF VDDO_TTL3 VMAIN_AVLBL 1nF
Co
10V 10V 3KV
8 R43 10K
LOM_DISABLE#
B LAN3_DISABLE#_R_MN
B
P1.2V_LAN 11
XTALI
2 LAN3_XTALI_MN
VDD1
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6 10
VDD2 XTALO
C535 C552 C537 C536 23
VDD3 LAN3_XTALO_MN
100nF 100nF 100nF 34 Y1
4700nF-X5R VDD4
10V 10V 10V 10V 29 35 25MHz
VDD5 TESTMODE
1 2
R564
12 2K 1%
RSET
LAN3_RSET_MN C34 C35
18
RESERVED1 0.01nF 0.01nF
19 0.5pF 0.5pF
P2.5V_LAN RESERVED2
20 50V 50V
RESERVED3
15 21
AVDDL RESERVED4
22
RESERVED5
C551 C37 1
AVDD2.5_OUT THERMAL
49
100nF 4700nF-X5R 39 24
AVDDL25 RESERVED6
10V 10V 25
RESERVED7
26
RESERVED8
27
RESERVED9
47
RESERVED10
1205-003904
3.465V
A A
SAMSUNG
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SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
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DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
SATA I/F CONN
D D
g
un al
ms nti
SATA HDD CONN
C C
8. Block Diagram and Schematic
Sa de
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
JHDD1
HDR-12P-SMD
1
SAT1_HDD_TXP0 2
SAT1_HDD_TXN0 3
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4
P5.0V SAT1_HDD_RXN0 5
SAT1_HDD_RXP0 6
nostuff 7
8
C605 C114 C115 C604 C603 9
100nF 10000nF-X5R 10000nF-X5R 100nF 100nF 10
10V 6.3V 6.3V 10V 10V 11
12
3711-000556
Co
B B
50.95 mm
48.05 mm
C520 C510
10000nF-X5R
C4 C23 10000nF-X5R
C509 Top
P3.3V 100nF 100nF 100nF
6.3V 6.3V
D Pin 1 D
R6
10K
1% Odd Pins : Top side
J6
R26
MIN3_CLKREQ# 9
CLKREQ* SIM_VCC_C1
10 M3 M4
g
GND_2 SIM_DATAIO_C7 HEAD HEAD
11 12
CLK1_MINIPCIE# 13
REFCLK- SIM_CLK_C3
14 DIA DIA
CLK1_MINIPCIE 15
REFCLK+ SIM_RESET_C2
16 LENGTH LENGTH
GND_3 SIM_VPP_C6 BA61-01102A|screw-118-1_b BA61-01102A
17 18
un al
SIM_RSVD_C8 GND_4 WOOFER
19 20
21
SIM_RSVD_C4 W_DISABLE*
22
CHP3_RFOFF_WLAN#
23
GND_5 PERST*
24 R27 220 PLT3_RST#
PEX1_MINIRXN1 25
PERN0 P3.3V_AUX
26
PEX1_MINIRXP1 27
PERP0 GND_6
28
GND_7 P1.5V_2
29 30
GND_8 SMB_CLK
31 32
PEX1_MINITXN1 33
PETN0 SMB_DATA
34
PEX1_MINITXP1 35
PETP0 GND_9
36
ms nti
GND_10 USB_D- USB3_MINIPCIE1- for antenna sub-board hole for antenna sub-board hole
1%
1%
100
100
37 38
39
RSVD_11 USB_D+
40
USB3_MINIPCIE1+
RSVD_12 GND_11
41 42
nostuff RSVD_13 LED_WWAN* M2 M1
43 44
C nostuff
45
RSVD_14 LED_WLAN*
46 RMNT-30-45-1P RMNT-30-45-1P C
R811
R812
8. Block Diagram and Schematic
RSVD_15 LED_WPAN*
47 48 Bottom
RSVD_16 P1.5V_3
49 50
RSVD_17 GND_12
51 52
RSVD_18 P3.3V_2
53
Near to Mini card Connector MNT1
54
Sa de
MNT2
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
3709-001470
nfi
P3.3V
HSDPA / WIBRO, 4.0mm C701
10000nF-X5R
C142 C745 SIM CARD CONN.
100nF 100nF
6.3V
P3.3V
P3.3V P3.3V HSDPA HSDPA nostuff
P3.3V
R67
P3.3V HSDPA
10K J7
Co
EDGE-SIM-8P-MNT
R776 P1.5V C1 C5
B J15 SIM3_C1VCC C2
C1 C5
C6 B
10K SIM3_C2RST C2 C6 SIM3_C6VPP
HSDPA EDGE-MINIPCI-E-52P R740 C3 C7
1 2
SIM3_C3CLK C3 C7 SIM3_C7DATA
WAKE* P3.3V_1 10K HSDPA
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3 4 C4 1
5
RSVD_1 GND_1
6
SIM3_C4DET C8
CD_U MNT1
2
RSVD_2 P1.5V_1 CD_L MNT2
1000nF-X5R 10%
7 8
1
EXP3_CLKREQ# 9
CLKREQ* SIM_VCC_C1
10
SIM3_C1VCC nostuff
0.01nF 0.5pF
0.01nF 0.5pF
11
GND_2 SIM_DATAIO_C7
12
SIM3_C7DATA nostuff 3709-001478 nostuff
1
CLK1_MINI3PCIE# 13
REFCLK- SIM_CLK_C3
14 SIM3_C3CLK nostuff C44
CLK1_MINI3PCIE REFCLK+ SIM_RESET_C2 SIM3_C2RST nostuff
2
HSDPA 0.01nF
15 16 0.5pF
GND_3 SIM_VPP_C6 SIM3_C6VPP
6.3V
Mini PCI Express Card
50V
50V
50V
2
17 18
PGB1010603NR
D7
PGB1010603NR
D5
HSDPA
SIM_RSVD_C8 GND_4 30.00 mm
19 20 R739 0
SIM_RSVD_C4 W_DISABLE* CHP3_RFOFF_HSDPA#
R738
C47
C45
C69
21 22 0
23
GND_5 PERST*
24
PLT3_RST#
PEX1_MINIRXN2 25
PERN0 P3.3V_AUX
26
HSDPA
PGB1010603NR
D4
PGB1010603NR
D6
PGB1010603NR
D8
50.95 mm
48.05 mm
PEX1_MINIRXP2 PERP0 GND_6 HSDPA
27 28 Top
GND_7 P1.5V_2 HSDPA
29 30 HSDPA
31
GND_8 SMB_CLK
32
SMB3_CLK_S HSDPA
PEX1_MINITXN2 PETN0 SMB_DATA SMB3_DATA_S Pin 1
33 34
PEX1_MINITXP2 35
PETP0 GND_9
36
P3.3V 37
GND_10 USB_D-
38
USB3_MINIPCIE2-
RSVD_11 USB_D+ USB3_MINIPCIE2+ Odd Pins : Top side
39 40 Even Pins : Bottom Side
RSVD_12 GND_11
41 42
RSVD_13 LED_WWAN*
43 44
RSVD_14 LED_WLAN* M504
45 46
47
RSVD_15 LED_WPAN*
48
SIM3_C4DET HEAD
RSVD_16 P1.5V_3 DIA
49 50
A 51
RSVD_17 GND_12
52 LENGTH A
RSVD_18 P3.3V_2 BA61-01090A
53
MNT1
MNT2
54 HSDPA
SAMSUNG
ELECTRONICS
3709-001401
HSDPA
For SIM card Sub Board
4 3 2 1
8-26
8-27
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
1 PORT USB CONNECTOR
EXCEPT AS AUTHORIZED BY SAMSUNG.
P5.0V_ALW
10V
D D
100nF U7
C132
2
TPS2062ADRBR
1
Need 2A Routing
IN GND
nostuff
8 7
OC1# OUT1
5 6 EC502
OC2# OUT2
C610 100uF C609 C611
R144 0 3 100nF 6.3V 100nF 0.033nF
g
KBC3_USBCHG# EN1# 10V AD 10V 50V
R143 0 4 9
KBC3_USBPWRON# EN2# T_GND
nostuff 1205-003683
un al
J12
JACK-USB-4P
USB3_P6-
USB3_P6+
USB3_P6-
USB3_P6+
PWR
D-
D+
Chargeable USB
GND
5
ms nti
MNT1
6
MNT2
7
MNT3
8
MNT4
C C
8. Block Diagram and Schematic
3722-002002
P3.3V_MICOM
R175
Sa de
P5.0V_ALW 200K
- This Document can not be used without Samsung's authorization -
1%
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
10V
KBC3_USBCHG#
100nF U16
C169 TPS2062ADRBR Need 4A Routing For EMI D 3
nfi
2 1 Q14
IN GND RHU002N06
G
8 7
KBC3_USBCHG 60V
OC1# OUT1 1
S 2
5 6 EC8
OC2# OUT2
C163 100uF C145 C164
3 100nF 6.3V 100nF 0.033nF
KBC3_USBPWRON# EN1# 10V AD 10V 50V
4 9
EN2# T_GND
1205-003683
Co
J9
B JACK-USB-4P B
USB3_P0-
PWR
USB3_P0- USB3_P0+
D-
USB3_P0+ D+
GND
5
MNT1
6
MNT2
7
MNT3
8
MNT4
3722-002002
C141
100nF
10V
C781
100nF
J501
Sa de
10V
HDR-6P-SMD
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
1
USB3_BLUETOOTH- 2
USB3_BLUETOOTH+ 3
4 J2
5 SOCK-8P-1R-SMD
CHP3_RFOFF_BT# 6 EXC24CE900U
nfi
7 B1
MNT1 1
8
MNT2 2
3
2 3
3711-002049 Camra I/F Circuit was moved to LVDS I/F Circuit Block. USB3_TSP- 4
USB3_TSP+ 5
6
1 4
7
TSP3_COMMSTATUS# 9
8
MNT1
10
MNT2
3710-002160
Co
B B
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B’d to B’d connector
A A
SAMSUNG
ELECTRONICS
4 3 2 1
8-28
8-29
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D MMC(GL823) D
g
P3.3V
un al
P3.3V_MCD
C731
10000nF-X5R C730 C729
6.3V 100nF 100nF
10V 10V U517 P3.3V_MCD
GL823
13 14
P3.3V VDD33_1 PMOSO
23
ms nti
VDD33_2
LED
20 C158 C159 40mil pattern
6 2200nF-X5R 100nF
AVDD33 10V 10V
C C727 C728 3 11
C
USB3_MMC- DM SD_D0 MCD3_SDDAT0
8. Block Diagram and Schematic
10000nF-X5R 100nF 4 10
6.3V 10V USB3_MMC+ DP SD_D1
19
MCD3_SDDAT1
R752 715 5
SD_D2
18 MCD3_SDDAT2 JMULTI1
1%
RREF SD_D3 MCD3_SDDAT3 EDGE-SD-9P
16 R163 49.9 1% 1
1
SD_CMD
9
MCD3_SDCMD MCD3_SDDAT3 2
CD_DAT3
Sa de
2
IIC_SCL SD_CDZ
8
MCD3_SDCD# MCD3_SDCMD 3
CMD
IIC_SDA SD_WP MCD3_SDWP VSS1
- This Document can not be used without Samsung's authorization -
4
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
VDD
12 1% 33 R780 5
P3.3V 15
SD_CLK MCD3_SDCLK MCD3_SDCLK 6
CLK
TESTMOD1 VSS2
SMT4 21
TESTMOD2 C767 MCD3_SDDAT0 R173 49.9 1% 7
DAT0
0-1005 22 C766 R172 49.9 1% 8
TESTMOD3 0.01nF MCD3_SDDAT1 DAT1
NC
17 0.022nF 0.5pF
MCD3_SDDAT2 R164 49.9 1% 9
DAT2
nfi
24 50V 50V 10
GND MCD3_SDCD# 11
CARD_DETECT
25 7 nostuff MCD3_SDWP WRITE_PROTECT
THERMAL EXTRSTZ
12
MNT1
C765
0250971700 13
MNT2
3709-001492
100nF
10V
Co
B 40 mil trace for medica card socket ground B
2
D
S
1
G
THM3_STP#
106
119
68
14
39
58
84
49
40
VCC1_1
VCC1_2
VCC1_3
VCC1_4
VCC1_5
VCC1_6
VCC2
AVCC
KSO0 100K
1 20 1%
KSO1
2 19
KSO2
3 18 124
17
KSO3 OUT0_SCI
125
KBC3_LED_ACIN#
un al
4
5 16
KSO4 OUT1
123
KBC3_CHG4.3V
6 13
KSO5 OUT7_NSMI
122
KBC3_EXTSMI#
KSO6 OUT8_KBRST KBC3_RCIN#
7 12
KSO7 U503 OUT9_PWM2
121
KBC3_WAKESCI#
8 10 120
KSO8 OUT10_PWM0
9 9
KSO9 MEC1308-NU PWM1_OUT11
118
KBC3_LED_POWER#
10 8
KSO10
11 7
KSO11
12 6 107
13 5
KSO12_GPIO00_KBRST GPIO01
79
KBC3_CHGEN
ms nti
14 81
KSO13_GPIO18 GPIO02
80 KBC3_PRECHG
15 83
GPIO04_KSO14 GPIO03
60
KBC3_CHG4.2V
GPIO05_KSO15 BA09-00021A NRESET_OUT_GPIO06 THM3_ALERT#
4 85
KBC3_SUSPWR 108
GPIO24_KSO16 GPIO07_PWM3
86
C KBC3_PWRGD GPIO26_KSO17 GPIO08_RXD
87
KBC3_PWRON_D P3.3V_MICOM_SW C
8. Block Diagram and Schematic
KBC5_KSI(0:7) 0 29
GPIO09_TXD
KSI0
1 28
KSI1
2 27 88 R553
3 26
KSI2 GPIO11_AB2A_DATA
89
ADT3_SEL#
KSI3 GPIO12_AB2A_CLK PEX3_WAKE# 300K
4 25 90 1%
5 24
KSI4 GPIO13_AB2B_DATA
91
CHP3_SLPS3#
Sa de
6 23
KSI5 GPIO14_AB2B_CLK
92
KBC3_BATDET#
KSI6 GPIO15_FAN_TACH1 KBC3_CHG3CELL C545
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
7 22 101
KSI7 GPIO16_FAN_TACH2
102
KBC3_VRON 100nF
35
GPIO17_A20M KBC3_A20G 10V
KBC5_TCLK 36
IMCLK
103
KBC5_TDATA 61
IMDAT GPIO20_PS2CLK
105
KBC3_CAPSLED#
KBC5_KCLK 62
KCLK GPIO21_PS2DAT
75
KBC3_RFOFF_LED#
KBC5_KDATA KDAT 32KHZ_OUT_GPIO22_WK_SE01 KBC3_PWRON
nfi
66 73
KBC5_MCLK 67
EMCLK GPIO25
74 KBC3_USBCHG
KBC5_MDATA EMDAT GPIO27_WK_SE05
93
GPIO28
98 KBC3_USBPWRON#
LPC3_LAD(0:3) 0 46
GPIO29_BC_CLK
99
LAD0 GPIO30_BC_DAT P5.0V_STB P3.3V_MICOM P3.3V_MICOM_SW
1 48 100
2 50
LAD1 GPIO31_BC_INT#
126
KBC3_RFOFF_SW#
3 51
LAD2 GPIO32
65
KBC3_BKLTON SHORT555 0
52
LAD3 GPIO33
64 KBC3_RSMRST#
LPC3_LFRAME# 53
LFRAME# GPIO34
63
KBC3_PWRBTN#
PLT3_RST# LRESET# GPIO35 KBC3_SPKMUTE# R707
54 1
3
200K
2
CLK3_PCLKMICOM 55
PCI_CLK GPIO36
34 1%
D
S
PCI3_CLKRUN# CLKRUN# GPIO37_CIR_LED LID3_SWITCH#
Co
57 33 nostuff
1
CHP3_SERIRQ PLT3_RST#
G
SER_IRQ GPIO38_CIR_IN
59
NC_TEST_CLK GPIO39
30 nostuff C662
B 100nF B
D 3 Q523
76 Q524 SI2315BDS-T1
KBC3_RUNSCI# NEC_SCI P3.3V P3.3V_MICOM_SW
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111 G RHU002N06
AB1A_DATA
112
KBC3_SMDATA# KBC3_RST#
AB1A_CLK KBC3_SMCLK# 1 nostuff
R66 22 2 109 S 2
HST3_SPI_CLK HSTCLK_GPIO41 AB1B_DATA KBC3_THERM_SMDATA
HST3_SPI_DO SMT548 0-1005 94
HSTDATAIN_GPIO43 (MISO) AB1B_CLK
110
KBC3_THERM_SMCLK R551 R86
R63 22 127 10K 10K
P3.3V_MICOM_SW
HST3_SPI_DI SMT549 0-1005 96
HSTDATAOUT_GPIO45 (MOSI)
1% 1%
HST3_SPI_CS# 31
HSTCS0#_GPIO44
69
HSTCS1#_GPIO42 TEST_PIN
R576 22 3 78 R64 4.7K 1%
KBC3_SPI_CLK FLCLK PWRGD KBC3_SMDATA#
KBC3_SPI_DI SMT550 0-1005 95
FLDATAIN VCC1_RST#
77
KBC3_SMCLK# R65 4.7K 1%
R580 22 128 116
KBC3_SPI_DO FLDATAOUT GPIO10 KBC3_PWRSW#
KBC3_SPI_CS# SMT572 0-1005 97
FLCS0# NBAT_LED
113
KBC3_LED_CHARGE# KBC3_TX R36 10K
32 115 R35 10K
FLCS1# NPWR_LED_8051TX
114 KBC3_TX KBC3_RX R87 10K 1%
NFDD_LED_8051RX KBC3_RX KBC3_LED_ACIN#
VRM3_CPU_PWRGD
41
ADC3_GPIO23 KBC3_LED_CHARGE# R39 10K 1%
42
CHP3_SLPS5# 43
ADC2_GPIO40
CHP3_SLPS4# 44
ADC1_GPIO46 P5.0V
CHP3_SUSSTAT# 38
ADC0_GPIO47
GPIO19
70 R795 10K 1%
XTAL1 KBC5_TCLK
R796 10K 1%
VSS_1
VSS_2
VSS_3
VSS_4
VSS_5
VSS_6
VSS_7
KBC5_TDATA
AGND
AVSS
R515 1M 71 R13 10K 1%
CAP
XTAL2 KBC5_KCLK
nostuff
1%
KBC5_KDATA R16 10K 1%
Y500 R12 10K 1%
0.032768MHz KBC5_MCLK R14 10K 1%
45
72
11
37
47
56
82
104
117
15
A 1 4 TP22196 KBC5_MDATA A
1
C25 2
MODE0
2 3
C522
0.022nF
C521
0.022nF
4700nF-X5R
6.3V
KBC3_TX
KBC3_RX
3
4
TX
RX SAMSUNG
GND
50V 50V ELECTRONICS
For Production
4 3 2 1
8-30
8-31
4 3 2 1
SAMSUNG PROPRIETARY
Micom Glue Logic
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
Power Slide Switch
D D
KEYBOARD TOUCHPAD
P5.0V
P3.3V_MICOM
nostuff
g
C173
D13 100nF
J500 BAV99LT1 10V
KBC5_KSO(0:15)
1
FPC-KBD-25P
un al
2 1
1 3
2
2
J18
3 CONN-6P-FPC
4
3
5 T_L_BUTTON# 1
6 KBC3_PWRSW# 2
4
7 T_R_BUTTON# 3
8 MNT1 KBC5_TDATA 4
8 7 6 5
9 MNT2 KBC5_TCLK 5
ms nti
10 MNT3 6
7
11 MNT4 MNT1
8
12 MNT2
C782 C780 C779 C776
SW501
SSS-12LG-V-T/R
13
0.1nF 0.1nF 0.1nF 0.1nF
C 14 50V 50V 50V 50V 3708-002402 C
KBC5_KSI(0:7) 15
8. Block Diagram and Schematic
16
17 nostuff nostuff
18
19
20
Sa de
21 nostuff nostuff
22
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
23
24
25
26
MNT1
1%
1%
1%
1%
1%
1%
1%
1%
27
MNT2
LID_SWITCH
nfi
3708-002166
P3.3V_MICOM
10K
10K
10K
10K
10K
10K
10K
10K
nostuff
nostuff SW503
nostuff SW-TACT-4P
nostuff P3.3V_MICOM P3.3V_MICOM 1 3
R20
R19
R18
R17
R15
R34
R37
R38
nostuff T_R_BUTTON#
nostuff
nostuff 2 4
nostuff P5.0V
3
R508 3404-001311
U500 20K 2 1
RF ON/OFF Slide Switch
Co
A3212ELH/HED55XXU12 1%
1 BAV99LT1
B C506 SUPPLY
2 nostuff B
1000nF-X5R OUTPUT LID3_SWITCH# D515
3
6.3V GND
1009-001010
Only For Communication SKU
P3.3V
nostuff 1009-001024
SW502
D12 (To layout : Error ?)
BAV99LT1 SW-TACT-4P
1 3
T_L_BUTTON#
1
2 1 2 4
2
10K 3
3404-001311
2 1
3
KBC3_RFOFF_SW# BAV99LT1
4
nostuff
D514
MNT1
8 7 6 5
MNT2
MNT3
MNT4
SW500
SSS-12LG-V-T/R
HSDPA
A A
SAMSUNG
ELECTRONICS
4 3 2 1
N220, N210, N150, NB30
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
LED SWITCH LOGIC
D D
P3.3V
P3.3V_MICOM
LED504
g
LTST-C195KGJRKT
3 1% 475 R180
KBC3_LED_ACIN# G 1
4 1% 1K R179
KBC3_LED_CHARGE# R 2
un al
LED501
LTST-C193TBKT-AC
R176 1K
KBC3_CAPSLED# 1%
2
P3.3V_AUX
ms nti
2 1 1% 1K R181
KBC3_LED_POWER#
C LED505 C
8. Block Diagram and Schematic
LTST-C193TBKT-AC
LED502
LTST-C193TBKT-AC
R177 1K
CHP3_SATALED# 1%
Sa de
2
1
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
LED503
LTST-C193TBKT-AC
KBC3_RFOFF_LED# R178 475
nfi
1%
2
1
LED500
LTST-C193TBKT-AC
R779 475
1
1%
Only For Communication SKU
HSDPA HSDPA
Co
B B
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A A
SAMSUNG
ELECTRONICS
4 3 2 1
8-32
8-33
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D D
FREE FALL SENSOR
g
un al
P3.3V
C144
10000nF-X5R
C143
ms nti
100nF
6.3V
10V
P3.3V
C C
16
15
14
8. Block Diagram and Schematic
GND_4
RESERVED_2
VDD
U10
LIS331DL
1 13
Sa de
VDD_IO GND_3
2 12
NC_1 GND_2
- This Document can not be used without Samsung's authorization -
3 11
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
4
NC_2 INT1
10
FFS3_INT
SMB3_CLK_S SCL_SPC RESERVED_1
SDA_SDI_SDO
5 9
GND_1 INT2
nfi
SDO
CS
P3.3V
6
7
8
1209-001876
3.6V
R155 10K 1%
FFS
R154 10K 1% FFS
SMB3_DATA_S FFS
FFS
FFS
Co
B B
22000nF-X5R
20 21 PNS_CPUVR_PHASE_MN
22000nF-X5R
22000nF-X5R
PVCC SW
Q5-2 1.5uH
R583 C561 MS-RH7040-1R5
PNS_CPUVR_BST_RC_MN AP4232BGM-HF D1 5 6 2703-000178
6.3V
20%
20%
31 23 PNS_CPUVR_BST_MN EC4
6.3V
6.3V
20%
CPU1_VID(0) VID0 1203-006047 BST D2
30 100nF R92 R69 16mohm MAX 330uF C105 C106
CPU1_VID(1) VID1 1.5V
29 19 ANS_CPUVR_BG_MN 3.3 25V C52 10 10 TH1 2V 1nF 100nF
CPU1_VID(2) VID2 DRVL 104KT1608T-1P AL
C807
28 1nF4 S
3
PNS_CPUVR_PHASE_RRC_MN 50V 10V
CPU1_VID(3)
C103
C104
VID3 1 2
2402-001306
27 C55
ms nti
50V 0.006ohm
CPU1_VID(4) 26
VID4
18 1nF
CPU1_VID(5) 25
VID5 PGND G 50V
CPU1_VID(6) VID6 nostuff
C C
8. Block Diagram and Schematic
2
IMON
R584
330K
P3.3V 15 CPUVR_CSFB_MN
Sa de
CSFB
4.7nF
50V
25V
1nF
R70 R71
nostuff
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
3
CPUVR_CLKEN#_MN CLKEN# 100K 0
1%
R47 16 CPUVR_CSCOMP_MN
CSCOMP
C53
C54
10K R51
1% 2.4K CPUVR_CSCOMP_RR_MN
1 8 CPUVR_ILIM_MN
VRM3_CPU_PWRGD PWRGD ILIM
nfi
R55
CPUVR_LLINE_MN 0
13
10 R44 LLINE
CPUVR_EN_MN 32
KBC3_VRON EN
R54
0
10 R45
GCORE5_PWRGD nostuff
nostuff
14 CPUVR_CSREF_MN
CSREF
C43
VDC 1nF R57
50V 0
Co
7
GPU
R567
CPUVR_RAMP_RRC_MN
B R566 G_CPU B
1K 300K
1% 1% 5 CPUVR_FB_MN
R565 R48
G_CPU CPUVR_RAMP_MN FB
12
RAMP
C42 C41 100 100
R49
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0.047nF 0.47nF C40 1% 1%
C555 CPUVR_IREF_MN
9 50V 50V 1K 0.33nF
1nF IREF 1%
6 CPUVR_COMP_MN CPUVR_COMP_RC_MN 50V
50V COMP
CPUVR_RPM_MN
10 R50 30K
RPM 1%
CPUVR_RT_MN
CPU1_VCCSENSE
R52 11 4 CPUVR_COMP_RC_MN
RT FBRTN
PAD_GND
CPUVR_RPM_RR_MN
G_CPU
300K C553
R53 1% R56 1nF CPU1_VSSSENSE
80.6K 332K 17 50V
AGND
1% R58 1%
24.3K
1%
33
G_CPU nostuff nostuff
nostuff
G_CPU G_CPU G_CPU G_CPU G_CPU
SHORT500
RT = 332Kohm INSTPAR
SWF = 350KHz
A A
G_CPU
SAMSUNG
ELECTRONICS
4 3 2 1
8-34
8-35
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
Chipset Power ( P1.5V & P1.05V & 1.2V )
D VDC D
FOR EMI
C71 EC2
C70 4700nF-X5R 4700nF-X5R
1nF
25V 25V
P5.0V_AUX U504 50V
APW7141QAITRG
g
10 13 PNS_P1.05V_TG_MN
P5.0V_AUX PVCC UGATE
2 P1.05V_TON_MN
C557 TON
4700nF-X5R R560 C558
6.3V 2.2 100nF D1 5 6 P1.05V (4A)
un al
R557 PNS_P1.05V_BST_MN 25V R558 D2
10 14 200K Q4-2
BOOT
1% G
AP4232BGM-HF L5
300ohm@TPS51117 PNS_P1.05V_BST_RC_MN
P1.05V_VCC_MN 4
VCC 350KHz 4 S
3 7.6V 2.2uH
12 PNS_P1.05V_PHASE_MN
C547 PHASE
1000nF-X5R MS-RH7040S-L71
D1 7 8 2703-001004
6.3V EC3
P5.0V_AUX D2
220uF EC506
Q4-1 R88 R89
G
AP4232BGM-HF10 10 C94 2.5V 220uF
9 ANS_P1.05V_BG_MN AD
ms nti
2 S 100nF 2.5V
G_P1.05V LGATE 1 7.6V
R554 RdsOn : 32mohmMAX 10V 2409-001159 2409-001187
C48 16mohm nostuff
100K PNS_P1.05V_PHASE_RRC_MN
CAN 4.5T
1% 1nF C46
6 50V 1nF
C VCCP5_PWRGD POK
8 50V C
PGND
8. Block Diagram and Schematic
nostuff
D502
MMBD4148 P1.05V_EN_MN
R561 20K 3 1 1 3
KBC3_PWRON 1% 75V
EN VOUT
Sa de
P1.05V_EN_RRRD_MN P1.05V_OCSET_MN
11
OCSET
- This Document can not be used without Samsung's authorization -
R555
1% 17.4K 0.1nF 100nF
C548 R581 7
GND
1% 50V 10V
SHORT1
100nF nostuff nostuff
11.8K INSTPAR
10V 1% 15 5 P1.05V_FB_MN
THERMAL FB SET : 1.055V
nfi
G_P1.05V
1203-006049 R556 R518
5V 47K 470K
1% 1%
OCP : 5.4A@32mohm G_P1.05V
OCP : 6.7A@26mohm
G_P1.05V G_P1.05V
G_P1.05V G_P1.05V
Pontiac only
Co
P1.8V_AUX P5.0V_AUX U513 P1.2V
B APL5930KAI-TRG B
5 4
P1.8V_AUX P5.0V_AUX U508 P1.5V VIN VOUT_2
APL5930KAI-TRG
5 4
C686 C652
VIN VOUT_2 10000nF-X5R 10000nF-X5R
9 3
6.3V PAD_VIN VOUT_1 6.3V
C637 C578 HD_DEC
6 C631
10000nF-X5R 10000nF-X5R VCNTL 1nF
R677 HD_DEC
9 3 10K
6.3V PAD_VIN VOUT_1 6.3V 50V
EC500 1%
6 C579 C687 2
nostuff
VCNTL R638 220uF 1000nF-X5R FB
1nF 2.5V HD_DEC
50V
17.4K 6.3V P1.2V_FB_MN
1% AD
R698 R699
PNS_DDR2VR_BST_MN
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
10 14 200K Q531
BOOT
1% G1
AON6912L L8
300ohm@TPS51117 PNS_DDR2VR_BST_RC_MN
DDR2VR_VCC_MN 4
VCC
300KHz 1 30V 2.2uH
12 PNS_DDR2VR_PHASE_MN S1_D2
C770 PHASE 10
1000nF-X5R MS-RH1048S-L42
2703-001012
6.3V
nfi
R731 R730 EC5
G2 10 10 C140 330uF
9 ANS_DDR2VR_BG_MN 8 100nF 2.5V
G_DDR LGATE S1 S2 S3 10V 2409-001195
5 6 7
C732 PNS_DDR2VR_PHASE_RC_MN 16mohm
1nF C690 CAN 4.5T
DDR2VR_PGOOD_MN 6 50V 1nF nostuff
POK nostuff nostuff
nostuff 8 50V nostuff
PGND
R781 1K
KBC3_SUSPWR 1%
SET : 1.800V
Co
R782 1K DDR2VR_EN_MN 1 3
AUX5_PWRGD 1%
EN VOUT
B DDR2VR_TRIP_MN 11
OCSET
B
R784 C771
20K 0.1nF
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C769 R758 R804 7
GND
1% 50V
1nF 10K 15K
50V 1% 1% 15
THERMAL FB
5 DDR2VR_FB_MN C800
100nF SHORT8
10V
1203-006049 R785 R786 INSTPAR
5V 15K 300K nostuff
1% 1%
OCP : 7.77A@19.3mohm
G_DDR G_DDR G_DDR G_DDR G_DDR G_DDR
A A
SAMSUNG
ELECTRONICS
4 3 2 1
8-36
8-37
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
P3.3V_AUX & P5.0V_ALW
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS VDC
EXCEPT AS AUTHORIZED BY SAMSUNG.
VDC VDC
R788
VDC 300K
1%
9V@1.75V , 19V@3.7V
KBC3_RST#
D R793 D
C699 C698 C697 C700 3.3 R789 C694 C691 C693
4700nF-X5R4700nF-X5R 4700nF-X5R 100nF 100K 100nF 4700nF-X5R 4700nF-X5R
25V 25V 25V 25V
1% 25V 25V 25V
C773 R790
100nF
U518 680K
25V
RT8205AGQW 1%
9 4 3 2 SYSVR_VIN_MN 16 13 1.19V ~ 1.7V
D4 D3 D2 D1 VIN EN Q528-1 D1 7 8
nostuff
STUFF@TPS51125 AP4232BGM-HF D2
P3.3V_AUX (4A)
P5.0V_ALW PNS_SYSVR_TG_P5.0V_ALW_MN 21 10 PNS_SYSVR_TG_P3.3V_AUX_MN G
g
Q529 UGATE1 UGATE2 G_P3.3V
L10 AON6912L G1 2 S
1 L9
3.9uH 30V 1 2.2uH
S1_D2 PNS_SYSVR_PHASE_P5.0V_ALW_MN 20 11 PNS_SYSVR_PHASE_P3.3V_AUX_MN
10 PHASE1 PHASE2
SIQ1048-3R9 R770 R761 C772 D1 5 6
MS-RH7040S-L71
un al
EC7 R734 R735 R732 R733 2703-001004
C661 PNS_SYSVR_BST_P5.0V_ALW_RC_MN PNS_SYSVR_BST_P3.3V_AUX_RC_MN D2
220uF 100nF 10 10 C744 100nF PNS_SYSVR_BST_P5.0V_ALW_MN 22
BOOT1 BOOT2
9 PNS_SYSVR_BST_P3.3V_AUX_MN
10 10 C660 EC6
6.3V
10V
G2 25V
3.3 3.3 100nF G
100nF 220uF
0.018OHM
8 ANS_SYSVR_BG_P5.0V_ALW_MN 19 12 ANS_SYSVR_BG_P3.3V_AUX_MN 25V 4 S
3 6.3V
CAN 4.5T
PNS_SYSVR_PHASE_P5.0V_ALW_RC_MN S3 S2 S1
LGATE1 LGATE2 PNS_SYSVR_PHASE_P3.3V_AUX_RC_MN
10V 0.018OHM
nostuff C696 7 6 5 Q528-2 C739 C695
CAN 4.5T
nostuff 1nF AP4232BGM-HF 1nF 1nF
nostuff 50V 50V 50V
RdsOn(Typ 15mohm / 19mohm)
ms nti
(Vout Fix / Discharge / Switcher over)
24 7
VOUT1 VOUT2
(Separate Routing)
nostuff
Set : 5.090V
C AUX5_PWRGD R768 R762 C740 C
C743 15K 11.8K 0.1nF
8. Block Diagram and Schematic
0.1nF 1% 1% 50V
P5.0V_STB C742 50V SYSVR_VFB1_P5.0V_ALW_MN 2 5 SYSVR_VFB2_P3.3V_AUX_MN
nostuff C738
Q532 100nF
FB1 FB2 100nF
RHU002N06 10V
Set : 3.356V 10V
R767 R766 R763
R759 C737 10K 332K 17.4K
D 3 1% 1% 1%
100K R805 R760
Sa de
10nF
1% 470K 150K
P2.0V_REF
16V
- This Document can not be used without Samsung's authorization -
1% 1%
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
SYSVR_ENTRIP2_RQQ_MN G
60V 18 3
1 NC REF
Q535 D 3 SYSVR_NC_MN
RHU002N06
S 2
G_P3.3V C741G_P3.3V
R787 G
G_P3.3V G_P3.3V G_P3.3V 220nF
KBC3_SUSPWR 10KSYSVR_KBC3_ALWS_ON_RQ_MN 1 60V P5.0V_STB 10V
1% OCP Valley : 5A@26mohm
nfi
S 2
P5.0V_STB P3.3V_MICOM
G_P3.3V G_P3.3V
R772
100K 17
G_P3.3V VREG5
1%
AUX5_PWRGD 23 8
C774 C775 C736
PGOOD VREG3 22000nF-X5R 10000nF-X5R 10000nF-X5R
20% 6.3V 6.3V
SYSVR_ENTRIP2_MN 6 P2.0V_REF P3.3V_MICOM 6.3V
Q533 ENTRIP2
RHU002N06
R765 R764
D 3
R769 R771 10 10
Co
150K 100K
R773 10 G 1% 1% 4 nostuff
TONSEL
B 1 60V
Ch1/Ch2 Fsw
B
Ch1 / Ch2 Fsw
nostuff S 2 P2.0V_REF : 300KHz/375KHz
RT8205A : P2.0V_REF : 300KHz / 375KHz
P5.0V_STB G_P3.3V G_P3.3V SYSVR_ENTRIP1_MN 1 TPS51125: P3.3V_MICOM: 300KHz / 375KHz
ENTRIP1
CHARGEABLE USB OCP Valley : 6A@17mohm P2.0V_REF
R775
100K
1% 15 14 R792 10
PAD
SYSVR_SKIPSEL_MN
SYSVR_ENTRIP1_RQQ_MN
PGND SKIPSEL
KBC3_USBCHG Q534
1203-005735 R791 P2.0V_REF : DEM Mode
RHU002N06 D 3 G_P3.3V
25
(PWM Only) 0
1
AO4807L
Q501-1
VDC_CHG
J1 B500 Q505
0.033
3 30V
1 30V
D D
R21
D2
6
D1 7
POWER S1 D1
3 2 7
S
GND_2 S2 D2
C501 C502 R503 C503 R501 3 6
4
C50 C49 S3 D3
G
GND_1
2 100nF 10nF 100K 1000nF-X5R 300K R113 R622 4700nF-X5R 4700nF-X5R
C559 4
G D4
5
C500 25V 25V
1% 25V
1% 2.2 22 25V 25V
1nF
4 100nF 50V -30V
MNT1
5 25V
MNT2 CHGVR_DCJACK_RCQ_MN
P3.3V_MICOM
6 C102
CHGVR_SGATE_RRQ_MN
L4 1W ANS_CHGVR_VDC_CHG_BJ_MN
0 1 4.2V G
1%
2 S
1 10uH
CHGVR_PHASE_RL_MN 7
SIQ1048-R100
6
BGATE VDC_ADPT VDC C100 D1 5 6 5
4700nF-X5R
4700nF-X5R
100nF D2 R613 R612 4
R114 R112
Sa de
10 10
25V nostuff
nostuff 25V 3
4700nF-X5R
4700nF-X5R
50V
D506 G
22 22 B505
470K 1%
CHGVR_BAT3_SMDATA#_CBJ_MN
CHGVR_BAT3_DETECT#_CBJ_MN
CHGVR_BAT3_SMCLK#_CBJ_MN
2
- This Document can not be used without Samsung's authorization -
BAT54A
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
25V
25V
300K PNS_CHGVR_PHASE_RC_MN
25V
1% 1%
1nF
1% G_CHG C798 C560
2
1nF 1nF
50V 50V C101 J3
15.15V@1.264V
C99 47nF BATT-CONN-7P
R107 R110
R520
C527
30V
nfi
50V 3711-007285
C10
30K 10nF 27.4K C563 B509
C9
C7
C8
1% 25V 1% 1000nF-X5R U4 BLM18PG181SN1
1
ISL6255AHRZ-T
25V
Q6-2
19 20 CHGVR_CSIN_MN AP4232BGM-HF
CSIP CSIN BAT3_DETECT#
C530
G_CHG 18 17 C564 0.1nF
G_CHG SGATE BGATE R611 50V
CHGVR_DCIN_MN 25 100nF B508
DCIN 3.3
(1.26V) CHGVR_ACSET_MN 27 25V BLM18PG181SN1
P2.39V_VREF ACSET
CHGVR_DCSET_MN 28
DCSET
C568 14 PNS_CHGVR_BST_MN
BOOT PNS_CHGVR_BST_RC_MN
BAT3_SMDATA#
1000nF-X5R UGATE
15 PNS_CHGVR_TG_MN C529
G_CHG
R605 25V R623 5.1 CHGVR_VDDP_MN 13
VDDP PHASE
16 PNS_CHGVR_PHASE_MN 0.1nF
Co
50V
200K 1% CHGVR_VDD_MN 26 12 ANS_CHGVR_BG_MN B507
2.5A@1.024V VDD LGATE
1% 11 BLM18PG181SN1
0.268A@0.107V PGND P2.39V_VREF
B CHGVR_CHLIM_MN 7
CHLIM B
CHGVR_VADJ_MN 9 21 CHGVR_CSOP_MN
VADJ CSOP BAT3_SMCLK#
R607 R609 R604 CHGVR_ACLIM_MN 8
ACLIM CSON
22 CHGVR_CSON_MN C528
WWW.AliSaler.Com
150K 20K 100K CHGVR_ICM_MN 5 0.1nF
ICM 50V
1% 1% 1% 6
P2.39V_VREF VREF
1 CHGVR_EN_MN
CHGVR_CHLIM_RQ_MN EN
3 13.05V@2.058V
D CHGVR_ICOMP_MN 3 2
G_CHG Q510 12.594V@1.188V ICOMP CELLS P3.3V_MICOM
CHGVR_VCOMP_MN 4 10 R105
CHGVR_KBC3_CHGBIT1_RQ_MN RHU002N06 VCOMP GND
G
P2.39V_VREF R91 1K
1 60V 23 29 1%
KBC3_PRECHG 150K ACPRN THERM
R620 1% C97 C98 24 CELLS Cells N/B
S 2 R106
CHGVR_VCOMP_RC_MN
DCPRN KBC3_CHGEN
CHGVR_ICM_RC_MN
10K
BAV99LT1
BAV99LT1
BAV99LT1
100 6.8nF 10nF
2
1% VDD 4
R608 1% 50V 25V 1203-005849 C96
D 3 25V 1nF
24.3K R90 GND 3
D500
D503
D501
G_CHG Q509 1% 47K R103 50V C549
3
70V
70V
70V
CHGVR_KBC3_CHGBIT0_RQ_MN
G RHU002N06 1% C95 10K Float 2 100nF
1 60V 100nF 1% 25V
1
KBC3_CHG3CELL R621 10V G_CHG nostuff
10K
S 2 R603 R606 R610
1% 27.4K 100K 200K
1% 1% 1% G_CHG G_CHG
G_CHG G_CHG G_CHG G_CHG
G_CHG P3.3V_MICOM
D 3 R521 100 1%
CHGVR_KBC3_CHG4.2V_RQ_MN G_CHG BAT3_DETECT# KBC3_BATDET#
KBC3_CHG4.2V R637 10K G R111 BAT3_SMDATA# R562 100 1%
KBC3_SMDATA#
1% 60V
1 20K
1% R519 100 1%
A Q507 S 2 BAT3_SMCLK# KBC3_SMCLK# A
RHU002N06 ADT3_SEL#
(ACTIVE LOW)
CHGVR_KBC3_CHG4.3V_RQ_MN
G_CHG D 3
Q508
SHORT2
INSTPAR SAMSUNG
R582 10K 1% G RHU002N06 ELECTRONICS
KBC3_CHG4.3V 60V
1
S 2
G_CHG
G_CHG
4 3 2 1
COM-22C-015(1996.6.5) REV. 3 D:/Users/mobile54/mentor/bloomington/pv2/Bloomington_PV_MAIN
8-38
8-39
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D
Graphic Core PWR ( 0.89V ) D
P5.0V_AUX
U6 C121
RT8015AGQW 0.22nF
R140
IGFXVR_VDD_MN 24.3K
R152 1 8
VDD
50V 1%
10IGFXVR_COMP_MN
g
C139 COMP
C122 100nF IGFXVR_COMP_RC_MN
22000nF-X5R 10V R676 C650
20% 6 11.8K 0.1nF
PVDD_1 G_GCORE
6.3V 1% 50V
9
un al
IGFXVR_FB_MN
G_GCORE FB nostuff
GFX_CORE (3A)
7
Set : 0.8944V
PVDD_2 R693 R694
150K 300K
1% 1%
P5.0V_AUX 3
IGFXVR_SHDN_RT_MN LX_1 R655 R656
1 0 0
SHDN_RT
L7
G_GCORE G_GCORE nostuff nostuff
R674 R675 1.5uH
4 PNS_IGFXVR_PHASE_MN
ms nti
10K 330K LX_2
1% 2
GND MS-RH7040-1R5
2703-000178 C606 C608 C607 EC501
IGFXVR_SHDN_RT_RRQ_MN
100nF 22000nF-X5R 22000nF-X5R 220uF
D 3 11 2.5V
C Q513 5
PAD 10V 20%
6.3V
20%
6.3V AD C
PGND
8. Block Diagram and Schematic
R691 1K
IGFXVR_SHDN_RT_RRQ_RRCQ_MN
G RHU002N06 nostuff
VCCP5_PWRGD 1% 60V
1 1203-005902
nostuff 5V
S 2
C630 nostuff
1nF
R690 1K 50V
Sa de
KBC3_PWRON_D 1% nostuff
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
D1 D2 D3 D4
4
1 2 5 6
SHORT506 AO6409L AO6402AL
S
INSTPAR
C683 1 4
3
4
D1 S
G
100nF SHORT504 2
S
R723 D2
100K 10V INSTPAR 5
3
G
D3
1% R703 C659 6
D4 G
3
C653
R746 SHORT505 100nF C654
ms nti
100K 4700nF-X5R
INSTPAR 1% 100nF
KBC3_PWRON_RCQ1_RRQ_MN 10V
R701 R700 6.3V
10K KBC3_PWRON_RCQ1_RRQ_RCQ_MN R702 470K 100K 10V
1% KBC3_PWRON_RCQ2_RRQ_MN 1% 1%
KBC3_PWRON_RRQ3_RQQ_RCCQQ_MN
C KBC3_PWRON_RCQ1_MN D 3 C718 20K KBC3_PWRON_RCQ2_RRQ_RCQ_MN
C658 C
1% KBC3_PWRON_RRQ3_RQQ_MN
8. Block Diagram and Schematic
2200nF-X5R 2200nF-X5R 3
R745 Q530 10V 10V
D
G RHU002N06 D 3 U514
KBC3_PWRON Q527 RHU002N06
10K 1 40-A4 KBC3_PWRON_RCQ2_MN Q520 G
1%
R704 RHU002N06 R729 10K RHU002N06 1 C655 C656
S 2 KBC3_PWRON
G
VCCP5_PWRGD 1%
140-C4 D 3 10nF 2.2nF
10K nostuff S 2
1% 25V 50V
Sa de
S 2
C809 R728 10K G nostuff
KBC3_PWRON_D
- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
0.1nF 1% 1
50V S 2
EMI Request (10/30) KBC3_PWRON_RRQ3_MN
nostuff
nfi
Sleep’n Charger P12V_ALW
Co
CHARGEABLE USB
B B
P5.0V_ALW P5.0V_AUX VDC P12.0V_ALW
Q526
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D1 D2 D3 D4
1 2 5 6
AO6409L
-20V
4
S
C682
R719
3
R141
G
10nF
100K 16V 30K 3 R153
1% 1% 10
C636 C635 VDC_RCQZD_P12.0V_ALW_MN 1 Q8
SWITCHVR_P5.0V_ALW_RRQ_P5.0V_AUX_MN 4700nF-X5R nostuff
SWITCHVR_P5.0V_ALW_RRCQ_P5.0V_AUX_MN
6.3V
100nF MMBT3904
D 3R720 10V C124 40V
10K 1nF 2
3
12V
SWITCHVR_KBC3_SUSPWR_RCQ_P5.0V_AUX_MN 1% 50V
G
KBC3_SUSPWR Q515 C123 C125
1
1
4700nF-X5R 4700nF-X5R
R682
10K
S 2 RHU002N06
60V 25V 25V
1%
nostuff
ZD1
BZX84C12L
A P5.0V_ALW P5.0V_AUX A
R721 0
R722 0 SAMSUNG
ELECTRONICS
NON_CHGUSB
NON_CHGUSB
4 3 2 1
8-40
8-41
4 3 2 1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D PWR Discharger D
g
un al
ms nti
P5.0V_STB P1.8V P3.3V P1.5V P1.05V
C C
R683 R151 R150 R680 R149
8. Block Diagram and Schematic
100K 10 10 10 10
1%
nostuff nostuff nostuff
KBC3_PWRON_RQ_RQQQQQ_MN P5.0V_RQ_MN P3.3V_RQ_MN P1.5V_RQ_MN
P1.05V_RQ_MN
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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- This Document can not be used without Samsung's authorization -
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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SAMSUNG
ELECTRONICS
4 3 2 1
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8-43
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SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL MT14 MT3 MT5 MT9 MT7
PROPRIETARY INFORMATION THAT IS RMNT-25-70-1P RMNT-25-70-1P RMNT-25-70-1P RMNT-25-70-1P RMNT-25-70-1P
SAMSUNG ELECTRONICS CO’S PROPERTY. M/B Top + Bottom
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS +
EXCEPT AS AUTHORIZED BY SAMSUNG. Bottom (Bottom side)
MT4 MT13 MT11 MT12 MT8 MT6 MT10
RMNT-25-70-1P RMNT-25-70-1P RMNT-25-70-1P RMNT-25-70-1P RMNT-25-70-1P RMNT-25-70-1P RMNT-25-70-1P
D KBD Top + Bottom D
(Topside)
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C719 1nF 50V C593 1nF 50V P5.0V_ALW P5.0V
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8. Block Diagram and Schematic
P3.3V P1.2V
C24 1nF 50V
P3.3V SHORT552 INSTPAR
C746 1nF C803 100nF 10V
50V
SHORT553 INSTPAR
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C768 1nF 50V
P3.3V_AUX P3.3V SHORT554 INSTPAR
C61 1nF 50V
C657 1nF G_AUD
P5.0V_ALW
C160 1nF 50V 50V
G_AUD For EMI C804 100nF 10V
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FOR EMI (09/25)
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