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1 Exe4 Sol PDF
1 Exe4 Sol PDF
cm 2
LN = DN ⋅τ N = 35 ⋅ 7 ⋅10 −6 s = 156.5 µm > xAbs
s
c) E1 = E ( x = 0) = (1 − R) ⋅ E0 = 713.9 W/m 2
E2 = E ( x = d ) = E1 ⋅ e −α ⋅ d = 176.0 W/m 2
EAbs = E1 − E2 = 537.9 W/m 2
d) With the mirrored rear side the optical cell thickness is practically doubled:
E1 = E ( x = 0) = E0
E2 = E ( x = 2 ⋅ d ) = E1 ⋅ e −α ⋅ 2⋅ d = 60.8 W/m 2
EAbs = E1 − E2 = 939.2 W/m 2
EAbs
e) η Abs = = 93.22 %
E0
q
S (λ ) = ⋅ λ ⋅ η Ext
h⋅c
1
Here : η Ext = η Abs ⇒ S (λ ) = ⋅ 1 μm ⋅ 93.22 % = 75.18 %
1,24 μm
Shunt Resistance:
Local short circuits of the p-n junction, insufficient insulation at the edges of the solar cell.
ΔWG 1.12 eV
− −
8.63⋅10 −5 eV/K ⋅ 298.15 K
b) Saturation current density: jS = K S ⋅ e k ⋅T = 40 000 A/cm 2 ⋅ e = 5 fA/cm2
I SC j 80.8 mA/cm2
Open circuit voltage: VOC = VT ⋅ ln = VT ⋅ ln Max = 26 mV ⋅ ln = 791 mV
IS jS 5 ⋅ 10 −15 A/cm 2
VOC 791 mV
1 + ln( + 0.72) 1 + ln( + 0.72)
VT 26 mV
c) With Equation (4.18): FF = 1 − =1− = 85.9 %
UL 791 mV
+1 +1
UT 26 mV
1000 ⋅ jMax
VOC = VT ⋅ ln = VOC + VT ⋅ ln 1000 = 791 mV + 26 mV ⋅ 6.908 = 971 mV
jS
VOC′ 971 mV
1 + ln( + 0.72) 1 + ln( + 0.72)
VT 26 mV
FF ′ = 1 − = 1− = 87.9 %
′
VOC 971 mV
+1 + 1
VT 26 mV
′ ⋅ jMax
VOC ′ ⋅ FF ′ 0.971 V ⋅ 80.8 A/cm 2 ⋅ 0.879
η T′ = = = 68.9 %
E′ 1 000 000 W/m 2