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II - 201)1 I o l'l-1
PAPER-I
I. b. 300and50
c. lSD and 300
d. 200 :md 350
v, v,
om
4 For the circuit shown in !he. given figure.
when the switch is at position A, the
Wh1c1J one of Uu: followmg parameters ClliTent i( t) = I sin H\セ エ@ + 300) A. When
does not excst for U1c two-pon network switch is moved to position Bat timl! t セ@ 0,
shown in the given figure'! the power di$sipated at tho switching
a i\13CD lnstaoc in the resistor R remains cmchungcd
.c
+t· ᆬ セ N@ $
b. j
c. h
d. z
ce
2.
2s ls +-
s
b.{セRZ
Q@
セZ}@
.e
2.<+3/.1
J.
セZャ⦅ イ@
Tc, c,I ャ セ@
w
om
The current 1(1) aJler S is openeJ att = 0 i.s
tL u decreasing exponential c. f(t - t, )u(t - t,,)
b. 1111 lnL'fCaslng 」 N セ ーッョ」ュゥ 。ャ@
d. f(t+t., )u(t +t,. )
c. a dantpcd sinusqid
d. oscillatory JJ . The dual of u J13rnllcl R - (.'circuit is a
A resistor R of I n and two iuductnrs L1 a. Se.rics R - C circUli
.c
8.
and L 1 ol' •nductances I H and 211, b Series R - L 」ゥ イ セ オ ゥ エ@
rcspect),•ely. are connected in parnlleL At c. Parallel R - C ctrcuit
some rime. the current!> through Lt Ulld L1 d. Parnl lei R- L circuit
ce
arc lA and 2A, respec.tively. The current s(.,- 1 1)
through R nt time 1= キセ ャ ィ」@ 14, Driving point ゥュイセ、。ョ 」ャG@ l H ウス]MセNQ@
a, zero s' . 4
is not realizable because the
b IA ra
セZ L@
2A
a. number of z.:ros is more -thw• tho
number of poles
d. 3 A
b. poles and txros lie on the imnginnr)
'), 1\ unit step current 1s appl icd to a network axis
m
consisting of only passwe elements. The
voltage across the currcnr source obs.·n•cd c, poles anO 1.cros do not altemme on
imaginary axis
ts v(t) セ@ ( I + e·••t tィセ@ simplest possible
network wmconsist of tlte elemenlS d. poles and zeros arc not located on tho
xa
real 。セ@ is
a I resistor and l capacitors
b. I resistor and 2 inductors 15. The function s+ RKセ@ can be rcnlitcd
c. 2 rcsi>t!lr, m1d I capuciwr
a. both ゥャセ@ a driving point imp«<ancc nnd
.e
by
il. e"'-'' (C(tShO 51 + SillhO,SI)
b. .,!.i• [cosh o.51 H ttth O.S1]
c. ..fie ';' sin(O.S/ + 45°)
d• • MNZセ {」ッウP N U エ Ksゥ ョ P N Uエ}@
The f>Oie-zefll pattems sltttwn in 1he gtwu 17. 1f R. L. C and G 。イセ@ the resistance.
figure is lor inductance. ・。ー」ゥhャエセ@ nnd 」ッ ョ、オ 」 エ。ョセ@
セ M u low- piM filter of n エイョセ ュ ゥウセッョ@ line. respectively, then
セ@ uf 14
the condition ror distortion ャ セウ@ 4. tho energ) stored on the capacitor I•·
エイッョ ウ ュゥ セゥッ ョ@ line ts ,Joubled.
n. R/C= GIL :{elect the correct answer usrng the cmle•
1>. RC = LG g.iveu below
c. R' C = t i l a. I and 2.
cl. RC"2 = GT.' b. 2 nod 3
18. 18. Til<' Cllef!!Y s tored t>tr unit vo lume in c. 2 and 4
«II clcetric fie ld (w itll USIL'II not.tions) i$ d. ::. and 4
given by 23. Lapbtc « lti• linn in tylioHhi,;al eoordinntcs
om
11. 112 eHl is gjven hy
b. 112 cE
c. 112 cE1
a. •v-.!. セ^Hイ・
r a;\ l:r
エᄋ Iᄋ NA HBG G GIL
r' c- セ@ 1):"" o
d, Efi'!
b.
- . il'l
•J ]Mセ
ll' I o'V
19. A ー エBゥ エゥ カセ@ charge t>fQ cou1<Jmbs is located m' nl ;J:'
.c
nJ point A(O. 0. 3) and. a negative cb>J•go
of magnitude Q coulombs is located ot c. 'II = p
11
point R(O. 0. · 3). '11Je 」 ャ セ」 ャイゥ 」@ field
.,._!J!.Ir61')·
ce
intensity at point C(<I. O. 0) is in the
tl. ,. a,. fir
I
イ Q 。ョ エャセ@
8 r..... セI@ IJtl
a negative :<(·direction
.....イ LNZWG[セMj ウM ュ t ャB dV
b otcgatiw z-<lirectton 0
HAセ Q@
20.
d. pns iti\'e t.·dircct ion
.!'be •force betwe.:u two 11oint.s charg.:s of
ra G auss
inteusit)• if witlt tloe volume ch;uge
density fJ at • po in t os
] oC c.1cb with -a 1 mm sopar.D tion in air is
a. 9 l O.)N •· V x if=s0 p
m
b 9 l O'"N b. 'il.f! = JJ0 p
0
c. 9 10' N
c, v 1i - p i "•
Q P ᄋ Q セ n@
xa
d. 9
21. A J foF c:op:ocito•· i• セ ィ。 イァ」 、@ by n crmsiMol d. 'il.E = p ls0
current of 2 セᄋ a@ tor 6 seconds. Tile voitnge 25. The input impedonce of i,.iS long short·
oeross the capoc.ltor at the end of chargjng circuited sectio n of • lossles• transmission
will be line is
.e
"· セ@ v a. zero
b. 4 v b. inductive
c. (i v c. capacltiw
w
d. 9V d . inlinilc
r o nsider the following statements: )vJatch lゥセ ャ@ I (Paramcleo'$ ) witlt i N lセ エ@ [I
w
A p<orallcl plane ""podlhr is lilleJ witb a (Valuo:s) for , tn llamission lmc "'"' u
、 ャ 、 セ エイゥ セ@ of ッ [L j。エゥ カ セ@ ーLュ ゥ エゥ| セ エ ケ@ £1'1 and serieo impednno:e Z - R セ@ jm L 0/m and •
connected to • d.c. ' 'oltogc of V volts. If shunt odmit1ance Y = G - J 6) C mh01m.
w
om
27. A houndar} <ep:ot·:ote; two mugn10ti<: d. R0n, LW
/1
materials of penneability 1'1 and J' l· 'l'h<> Ma tch List l (1\·laxwell equation) with List
magnetic field vector in セG @ is H1 witlt a D (Ptllloription) and select U1c 」ッョBGセ@
nonnnl oontponent Hn1 ;md lltng..."tinl answer.
compouoot liLt キ「ゥャセ@ Out in )1! is 11: with List!
a nonnal com1100Cnt Hn,, 11nd a umgentiol
.c
component Ht1. Then the derived A [fJBdii '"' o
condition>wquld be
B. [fJD .da = f.ptW
a. hL ] hL 」 ュ、h セ] OQ L@
ce
b. fl. セ@ /1 1 und J1, f:f, セ@ ;.<, H ,_ c. [fJE.d セ@ =-[fJB,d"
29. l'11e ゥッ イセ、。エ ョ@ field of ;tt •mtenn.a •l セ@ 、ゥセー ャ 。 」 ュ ・ ョャ@ through any smface
dislllnce r vnries tLS bounded by エャッ セ@ path
n. 1/r -'· The lOl1li elc:etric displuoomcnt through
h. I r·' the .•urfacc: enoiO'Iing a volume is "'lu•l
.e
cッ、セ@
a. Llo&rly polllfi:z<:d
l>. Right circulnrly pol<ltit.etl
A A C 0
a. 3 2 4
w
om
the '1'111 molle. The b3ndWJdth 3 dB 1;;
i セN@ of full-scale re•din11. 'fhe voltage
ュ・Zセ ウ ッイオ、@ h> he 2A i\ lllz. The Q of the
mc:•surtil by the in.stl'\tmc-ut is 75 \'. Th<l
CO\ ity at 9 GJlz"'
limiting t:ri'OJ' is
"· 9()()0/2.4 -F. li. 1°u
b. 9{)()0/2.4 .J2 b. 2%
.c
c. 9<
.)00 2..1 ../3t ..fi c.. 2.5%
d. !){)()1)/2.4
37 l'he phenQJIIenon of microwave •ill!lols 4:i. Which o ne of U1e foUow ing i> the l>est
ce
following U1e c:urvalw" of e>Jth is kiowu definilion of' accuracy?
a. ft i• the rneosnre of con,,istency or
•• "'''roducihility ,,,. ュ ・セオイ イョ ・ ョャ セ@
a. faraday dJc.:t
b. 、オ セ^ エ ゥョァ@ ra b. it ゥ セ@ tho ratio IJI' the chanJlc 1n output
siwmltu the cll3nl\c in input signal
C. "OVC till
c. ll i.> the slllJl lkst chango in mea•w•:tble
d. lroposcallcr
lnpul
38. 1\ r•dio 」ッ ョ オョゥ・ZセエNャッ ョ@ link is to b«
m
d. II is the closen.:s.• with "hich on
セ ャ Zエ「 ャ ゥウィ・、@ カゥ セ@ tbe iono$phete. Ute virtual
instrument reading approaches the tn1e
height ot the m1d-point til' the path is )00
1 nlue ol' thc ' luantity being measured
I.Jn and the t:riticnl t'rcqOtney i• !I Mllt..
44. \Vl•ik OltiiS UJ'ing the ph:tSto dil)'trcnce
xa
o. The 11 nw frec,ucney i;, to' r.p.s. IS 20 H7- The unity-gain l'r<o]uenc) of the
lo. 'Ute wavelength i• 3. H 111 Of>'DIIIp i!
w
om
V in (he bridge circui1 shown in the given
セ M 4 3 2
figure is
c. 4 J 2 3
a. zero
h. 3.33 v d. 2 3 •I .I
c. 4.20\'
so. Considl;11' Ute foUo,,ing •Mements
associated wifu electrical/electronic
.c
d. 6.66V transducers
47. d ゥ ァゥャ@ セ。 rueaswing utstrllnlents use lite I. Mass-inertia effecbl are minimized
foUc>ning three セケー・ウ@ ofA to D wnverters
2. T hese エイ ュセ、オ」・イウ@ t'<lnsunte Vel)' litUe
ce
1. Dual Slope Type power
2. Cotmter Type 3. T)leresponse エゥュセ@ is large.
3. Flash Type 4. 1'rruh>"lllission rutd processing tl1e signal
The correct sequence for .these c-onverters ra for Ote pwvose or measurement life
ln decreasing Order of [heir speed (f.1$l'est eas1er.
\(1 slowest) is
Select flte corred answer usir.g the rod.es
a, ;3, Q セR@ gi \len below
b. J, Rセ@ 3
m
a. 1,2and3
c. 2, 3, l b. 2, 3 and 4
d. 3, 2, I c 1, 3anrl 4
48. Con:;-ider the following statements
xa
d. 1, 2 and 4
regartllng the advantages of Andeu<mt 51. Consider the ヲッャBセs@ sttttcmenlll:
bridge:
A transducer con verts
1. ll is tlte modification Qftlte Maxwell's
I. mechanical energy tuo electrical
inductance-capacitance bridge.
.e
energy.
2. F'or イョ・。N セオイゥョァ@ tlte low Q of coゥャセL@ il is
2. mechanical displacement into electrical
snperipr l.o the Ma.-.."WeU's bridge.
signal.
3. It is si.Jnple compared ·to Maxwell'"
3. one foon of energy into another form
w
bridge.
of eue.gy:
4. It can be used lo <letermine mutnal
4. electrical energy iltto mechanical fulln.
indttctance also
w
b. 1, 2and4
c, 3 alone
c, 2 rutd 4
d. 1 alone
d. J, 3 。ョ、セ@
52. Match Est f (Transducers) Bセエゥ@ List If
49. Match List' I (Bridges) Wllh l. ist n (,Measttred Quantities) and selecl Ute
(Quantities) aud select tlte coll'Wt answer
correc·t answer
l,isl l
List I
A. Ma>.:well's bridge
A Capacitive transducer
B Wi en bridge
B. Theono<:Ouple
C. !-lay's 「イゥ、ァZセ@
C. Lo>trl t't!ll
7 ot f4
D. dャ。ーオ ᄋセ ァュ@ c. - log' 1 G HPセ@ ion conccntnujon)
List U d. - log (OH- ion oonc.:nlrat·ion)
I. PtessuN 58. The piezoelectric crYJiU. I vnh•se
2 Torque settsitovity ャセ@ delined as a
J. Displacement セ N@ volta go> カ・ 、セ ャ ッー ッ、@ per unit セエイ・ウ@
4. Tempemrure h. field developed per unit stres.<
Codes; c. voltuge devd<IJ!ed per lJml tit roe
A ll c 0 d. field developed pet •mit force
3 59. 'll•e bandwidth ar "" u-l>lt hin.an· coded
om
"· 2 4
1 2 II PC'M signal for au otiginat' signal
bandwidth ofB llz is
c. I 3 4
n. B 112.
d. 4 2
b. nBUz
53. Gauge f actor <Jf a セ エイッゥョ@ gauge is de(med
liS tl1e ratio oh por unit cl1ange ln the 8
c. -Hz
.c
J, セ ョ 、オ・ エゥ カ ゥ エケ@ lo tl1e per unit change in
,.,
up plied foNe acting on Ute 」 ャ 」ュセ ョャ@ d. ョ セ b@ Hz.
b. I'CSistunco w tlte per unil 」ィ 。ョ ァセ@ in the 60. Fo r an Mf wave. lhc m[L•<.imum voltngu
ce
length of the element wns found 111 he 1(\ V and the minimum
c. stress to the per uni.t change in strain of I'OIIJige wos lbund IV he 5 V . The
the elemc"fll modulation index of U1e wove would be
d, ctJn-enl to tlte per un it clmngo in the ra a. 0.33
knglh ッ ヲャ \^セ ャ・ュ ・ョャ@ b. U.S2
54. A variublc reluctance typ<> tachometer has c. (),.1()
60 oulor ャ」・エ ャ セ@ tlo" record, 3600 d. 0.1
」ッ オョエ N ャ ュ ゥ ョオエ ・セ N@ The device speed is
m
61. T.h" Fl\ 1 tolem<lry •• compared with .'\M
n. 60 r.p.s. telemetry requires a cbanncl that is
b. 1セP@ r,p.s. a. equal to tll3t of Atvltolcmotty
c. 3(.00 r, p.Jl.
xa
セ M sG エイ ッ「セco jャ」@
b. 1.39 ' IPセ@ ml$
3. Aroelerometer
.:. 4.40 I0 7 m/s
l'hQ correct ウ」ア オ」ョ セ・@ of these devicl::! to
w
d. 3 I08 m!s
ャエZセ^オ イ」@ U1e tUintioual ' peed, \ibration nod
ZセオQャ ッキL@ rCIIpectiw ly lセ M 63. A four-]lOiul probe method is used lo
evolu•te Ute s heet ,..,.ist>ncc of •
u. 2. 3 and 1
semiconductor 」ーゥセQク 。 ャ@ layer. lf a probe
b. 2. I nnd 3 cun-enl of I0 filA ーイ ッ 、オセ セ@ a カッ ャ ァセ@ dmp
c . I, 3 and '2 of 0.22 V between U1c inne-r Jll'llbc:s, tbcn.
d. 3. 23nd 1 the sl!cc'lrcsist:utcu of tl1e layer is
57. The pll V11lue of o solution is defined セ@ u. LOO Ols<JU!n·c
n, ·log <H' on concenttlltion) 1). 215 Ol>qWit·c
b. log tH' ion concentration)
8llf 14
c. 572 0/KqWirc Gamcts
cL 1000 O;squno'C
"·
4. Soft magnetic materials
64. Foo· which of lhe following ('odes;
semiconducto'"', resistance 、ッ ・セ@ not follo\\' 1\ B c D
Ohm's ャZセキ@ over some spedfie イセョァ・@ oftl1e
nppliod vohago"'
•• 1 2 ·I 3
b. 2 3 4
l. Gel'luanium c. 2 4 3
2. GoIlium arsenide d.
3. Iridium pllospltidc 69. 1\.fotch li.<t w ith list JT :'mc1 セ・
2
" 4
ャ・」 エ@ ohe
om
Seltc.t U11:! coa1-ecl auswt.'l' uswg the codc!i CA1n"c.t ans-wer:
g iven below: A. rerro-onagneti•m
n. 1. 2•nd3 .B. s・ュゥ セMッ 」ョ、オ エ ッイ@
b. I ond 2 C. Opoical property of solid
c. 2nnd 3 D. SopeNottductivity
.c
d. I and 3 L ist U.
G5. £1oclron mobility and life-time fn a 1. d,c. elctoricaJ r""i\tivity ''"nisht:s Jl the
temiconcludor -nt room temperature are critie:t l!cmpcrawre Te
ce
respectively 0.36 m2/(V s) and 3-IU j.LS. t ィ セ@ 2. Doping wltl1 impurity increases tlte
diiTu>ion lengtll セ@ olcctrical conductivity
n. 3.l3 mm 3. An inl'e mol molecular iidd JlM which
b. 1,77 llUD ra is ーイッエゥ ョ セA@ t·o ュァョ・エNャW\セゥッ@ M
c. 355 mm exist• at <'<lch cllpole >nd aligns it
tl. 3. 13 em parnlld In otl1cr dlpolos
(J(). A piezoelectric cryst•l bus Young's 4. Abuvc tloc Nee! lcn'lpcruture llic
clipoles lx.>come randomly oriented
m
modulus of 130 gpセ N@ The uniaxi.'ll >I"'!!&
that ュオ セエ@ be "')plied to increase its 5. The conductivity セヲ@ crysL1lllioe
J)lo1Mi?.31ion from 550 10 555 (' on= is. <ernlconcluctors and dielectoics
uetnly increased b) rudiation ゥョ」 、セョャ@
xa
,.
c. 1.593 GP" a. 3 5 2
d. L182GPa b. 2 5
.e
I. •pplied vollogc
tl :; Bohr mugneoons 2. fi·oquency of tho alt<:mating field
Matclt list I with List 11 :tnd .-el.:ct the oppl ied,
w
om
c. 2 ond 3 rn 1 Qf dop•nts "" U11: lishtly doped セ ゥ、・L@
d. lnotl3 セ・イッ@ bi•s カッ ャセ ァ・@ [セョ、@ n huih· in pOtential
n. lセウ」イ@ Ct11L,.ion from Ruby crysllll is 111'0.2 V. 111e deplt:tion width oftheohrupl
IJat.:.ause of tran.'S ilion j unction H エ セォゥョァ@ セ@ = 1.6 10' 19 C, セ@ •• - 16
and ,-, 8.875 10'11 P/m) is
• · from conduction band to V'! lcncc bond
.c
AJ,c >j !l, 0.036 Jllll
b. from conduction band h) (me <)f lh" b. 0.6f.1m
len:ls due to Cr ions e. 3 ).lm
ce
c. beh•etn energy leveb mtnxluced by d. 15 mm
Cr ions 77, Wltich of tlte following SUltem"n!Js nllall:
d. botwuen on.. of tlJc leVels due to Cr ion lo the Hall cffc;ct?
and valence bond of i\1 10 3 ra 1. A potcnti.1l diffcr"ncc i• developed
73. \\'ire-wonnd resistanc<s :1re use:d only across a cww nt·canying mc·t3 l strip
when when lhe strip is placed m il transverse
ゥ セ@ c..c;sential
a, Prt:cision uUJguetic field.
h. lowvalnes are reqllired 2 Th,. Hall effect is wry w.::ak in meta Is
m
」 セ@ hlg.h JX)Wcr r;Hing ゥセ@ necessary but is br,gc in semiconductors.
II. C<•!tly "'l'lipmenl' are manuf3cntrcd
:3. The Hall effect is very weak in
74. Consider the following sta1ements: •emicondoctors butm large in ュ・セ。ャウ N@
xa
c. I. 3 。ョ、セ@
3. l>e.rtneubility
d. l. 2and+
\Vhk b of lb""c >lnl..,utnts are cDm.:ct'l
a. I and 2
7$, ·n,c output cunctll vcrsu.' input volt:Jge
w
d. 1, 2 J.Ud 3 bias
15. Com idcr the following statemonts: b. uurrent flow on ly when n po•itive inpul
lnlpurity diffwion i" usud [n threshold volt3ge is 」イッセᄋj@
w
セj・ ュゥ 」ッ ョ、ュ Z エ ッ イ@ to control the conductivity. c. corrcnt Oow cmJy wht=11 a ·oogstivc
n1e n•tllre of' the impurity fli'Ofile shnuld inpur cut-off カ 」 ^ ャエョセ・@ 「ゥ。セ@ is c-1·osscd
I>C.such ll••L U1e d. no cul·off utput vollllgc
I. Impurity ooncentrotion decr.,asts with
79. An. SCR triggered by • current pulse
diffusion deptl1. through its gate con be turned <>If by
2. P1'0(jJe n.'sults in Bセ@ intcn10l electrio >. giving •n(lllter Jlllise <>I" the s:tme
·ficlcl potori(y «• the. gate
h. by giving pulse lo the cathode
c. hy giving pulse lo the nnode
10 o t 14
.1. by n::ver.ing the polarity of セ ッ、・@ョ und 84. ]\1Jltch Lilot I IOper:Hin_g point on the 1 -V
C3thode volloge charncteri<tie) witl1 l エセ ャ@ 11 H Q^セ Mカゥ」・ ウI@ and
RO. In •n MOS lr.lnsistor, the gal" ウッ オイ セ・@ input select the c,>rrt d tH1$Wtr:
ゥュー・、。ョ 」セ M is List l
1. lower ャィセョ@ thd fnput lmpod3nce of a A. lst quadrnnt
BH 13. 2nd <tUlllh'a nt
2. higher thun Ute u•ttUt ilnpcd,.ncc elf • C. 3td qundraul
s.rr D. 4th qu;tdt'J nt
3 lower thon the Input impedonce of • Listll
om
JFET I. Solw· cell
セ M hi&h"" than Ute utput impedilnce of 11 2 Photo u<>tcclor with hi£,ltlltrulitivhy
.IFET
3. Photo dctcetor wit.h hnY セ・ ョ ウ ゥエ カ ゥエ ケ@
n, I lllOIIC
4 . R.:clifier diocl.:
b. h nd 3
Codes:
.c
c. 4 oJoue
A B C D
d. 2 l1tld 4
8l. A t 25"C. Ute e olle.:tor-•m itkr Yolbgco drop ••
b. 4
4 3 2 1
3 2 I
ce
of a s il icon エNュョ ウ ゥ セエ エ ッ イ@ at sahrrniion ゥ セ@
opproximately c. 4 3 2
a. l v o. d. 3 4 2
11. u..• v 85. AS!!ertion (A): A c ircuit conlllining
c. o.s v
ra t'C3Ctances i$ satd to be in JUonnncc if the
voltage イッ。 ・ セ@ U1c einmit is 1n pha-<e with
tl. (),7 v
lh<> current thnluj!h it.
l'he イ・ カセBG・@ bia; bn:akdmvn of high speed R e:1sou (R): A t res01mu:e, tbe po wtr
セゥ ャゥ 」Nッ エャ@ trans ゥ セ エ j ゥ イND@ is due; to
m
ヲセ」MャG ッ イ@
of the ciJ'C.Uil s コN」 イ ッ セ@
n. avolandu: breokdown mechanism at
• - !loth A and R :u'll true and R fs the
bo th \be j unot.ions
correct exp lanation of A
b. Zener bt-eakdown mccho.nism •I both b. Both A and R are true hot R is NOT
xa
om
wave is mme than the optlcal horizon. a. !3oth A セ ョ 、@ Jt aN true Md J{ Is u エ セ@
.c
b. Bolio A And R ""' true but R ill NOT
the cotTDd セッZク ー「ョ。エゥ ッョ@ of A Assertion (A): Tite semiconductor devices
セ N@ A is true but R rt fabe Like. Bfl'• lmve o nuximom temperature ot'
opention. beyond which doey do no
ce
d A is fo lso but R is lruc
funciiUIL
8!1. J\Jiseo1.ion (1\): Any indicating irutrumcnt
"h<ould have" damping tnrquc. Rc:osou (R): Elllrinsic, p-typc on<l n•l)pe
セ・ュゥ」Lョ、オ 」 エ ッイ N ゥヲ|@ bcbtwe Nエセ@ inui nNic hc:vcmd
Reason (R): Wlthoul a damping IOr<jUg, th"
pointer wl.'c.< more sell ling time.
ra エセオ@ l"'o1pemture and the effect of H i o H ^ゥセ@ is
ャ ッウセ@
a. Both A and R oro true and R " lloc
con'Ocl cxp!Jinotion ofA a. Bolh A and R "'"' true ッョセ@ R is iセ@
corn:x:t "'-'Phtnfotionor A
b. Both A and R nrc ltu<l but R is NOT
m
b. BoUo A and R arc true but R is NOT
I he com:cl explanation of A
U1o correct explanation of A
c. 1\ is lnoe but R ;, faille
c. t\ i$ lnte セ|Q@ R ゥセ@ false
d. A is fo!Jic but R is tru.e
d. A is l':olse but R ;, true
xa
b. Both A • ttd R rue true but R i< }I:O'I' func.timlll does COI'I'ospond to a non·
Ut..: corr<Jet.,xplonJJtion of A minimwn pba:sesystem?
w
om
match List I (Matri x A) with List IT a. is 2b1(1t' +Ill' )
(Posilil>n of dgcnvaluc-s) und sokct tho 1!-J 1111
list I
b. (b'"i- l,l)
c. does not c.xist
{セ i@ セR }@ d. cxisisonl} when It is single sided
.c
A.
102. The Fourier 1ranslorm of ii(l) is
{]セ@ セ }@
a. tOw
B b. jfll
ce
C. J/(1 "JI!t)
C {セ@ セ i }@ 103.
ct. セャIHュ^@ ... t.aw
Mutch List I wllh List II and select rhc
correct answer:
{セ@ セ}@
[),
ra List I
A.. e--
l.iSI If B. I -,,
I One ・ ゥァセオカ ャ オ」@ at the urigtn
m
1+.•
2. Both 1he eigenvalues in the LHP
:l. lloth セi エG@ eigenvalues in RIIP
4. Both the cigcnvnlu<s on the imaginar)'
xa
axis [),
s )+us)
(
Codes.
List 11
A B C D L All-pass flller
a, 2 I 3 4
.e
a [:, H (He)
om
h.
h. om.lcrdnmped
c. uudumpcd
I:L _ .
l()t..
J. critically 、セュー」 j@
or
Which nne the tbllc>Wing is the イ」ウーッョセ@
ytt) of a cuusai i.TI systt'l11 de;;cn'bro by •r· . . . .
.c
1/(s)= (s+ l)
s' + RウKMセ@
For a ghen ゥョーオャNクHI セ ・@ 'r (t) '!
ce
a. j HエI ]・ セ ウゥ ョエオHI@
I '
d. On the lefi s ide of Reall z) = 0 line l +c: +d: · +e:
;), 2
1()8. If y(t) + J: ケ HイI セ Hエ Mイ I、イ ]エセ H エI\MNxHAL@ b. 3
is c. 4
s
.e
3. u{l) d.
b. r (q 112. A sign3l xtiJ = 6 cos 10m is sampled al
c. 1'( l) 'the rule of 14 Hz. To recover tl1c origloal
d. I signal. the t:ui-OfT trcqucnc) fe or the idoal
w
tOY. Tht impulse t'c'Sponsc <lf uS) stem is h(t) = lm,··p..ss tiller should lx'
o(t - 0.5} If two such systems arc cuscaJcd. a. 511: <f. <911:
the Impulse response the overall system or h.IJ I I z
w
"I ll be c. 10 HL
3. 0.5/i(l- 0.25) d. ャセ@ I It
b. 0 (l- 0.25) IIJ. The impulse response of a discrete system
w
i tI I I I I I I I
11 0. The impulse response ッヲセ@ S) ウlセGB@ consists
of IWO delta funcilons US Sht\\\'11 in エィセ@
given llguro
d. 3 4 I 2
l Oll I IR, T he first Gauer fOM11 reali7.nJ;ion of lhe
ISU n, driving point reat1oncc
2(s' K ッIHセ G@ • c) .
セ@ 30V
{= )
,If; .f +-h
:a <h < c IS
In lhe 」ゥイセヲャ@
shown in lhe giwn tigure. a.
om
1., I•
RL will absorb maximum power when ゥ ャ セ@ IRW
vuluc is
a. 2.75 U
b. 7.5n b.
c. 250
.c
d. 27fl
115.
ce
c.
in the given figu.re and select lhe corTeCI [JO\\cr dissipated in lh< 5 0 n:sisr(>r is
OUS\\ Cr: a. L.ero
b. sow
w
w
c. 125
d. 4()5 w
120.
w
セp N j。ャ@ セh T@ k1l
I ist X
セm o@ セ@ I v,
i '.. ,.
1\ . Twigs
""' '
w
ll. Links
<:. hmdnmcnlal cutscl
D. l'undumenl!ll loop In lhc circuit sh01m n rile given ligure. V,,
List Y is given by
I. 4, 5 b. 7 セN@ sin (l· n/4)
2. I. 2. 3. 8 h. sin (l +- 11/4)
3. I. 2. 3. 4 c. sin I
4. 6. 7. s d. ws r
Cudes:
A 13 c 0