MITSUBISHI IGBT MODULES

CM400HU-24F
HIGH POWER SWITCHING USE

CM400HU-24F

¡IC ................................................................... 400A

¡VCES ......................................................... 1200V
¡Insulated Type
¡1-elements in a pack

APPLICATION
General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

107
4–φ6.5
93±0.25 MOUNTING HOLES
13.5 26 29 20.5
8.5 12.55
19.1
10 9.5

24.35
21.15
17.2
48±0.25

6.5

G
6.5
62

E E C CM
8.5

18
2–M4NUTS Tc measured point 2–M8NUTS 4

6.5 23 6 23

E C
RTC
E
–0.5

G
34+1
26 –0.5
+1

LABEL
CIRCUIT DIAGRAM

Sep.2000
 MITSUBISHI IGBT MODULES

CM400HU-24F
HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C)

Symbol Parameter Conditions Ratings Unit
VCES Collector-emitter voltage G-E Short 1200 V
VGES Gate-emitter voltage C-E Short ±20 V
IC TC = 25°C 400 A
Collector current
ICM Pulse (Note 2) 800
IE (Note 1) TC = 25°C 400
Emitter current A
IEM (Note 1) Pulse (Note 2) 800
PC (Note 3) Maximum collector dissipation TC = 25°C 1600 W
Tj Junction temperature –40 ~ +150 °C
Tstg Storage temperature –40 ~ +125 °C
Viso Isolation voltage Main terminal to base plate, AC 1 min. 2500 V
Main Terminal M8 8.8 ~ 10.8 N•m
— Torque strength Mounting holes M6 3.5 ~ 4.5 N•m
G(E) Terminal M4 1.3 ~ 1.7 N•m
— Weight Typical value 450 g

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 2 mA

VGE(th) Gate-emitter threshold voltage IC = 40mA, VCE = 10V 5 6 7 V

IGES Gate leakage current VGE = VCES, VCE = 0V — — 80 µA
Tj = 25°C — 1.8 2.4
VCE(sat) Collector-emitter saturation voltage IC = 400A, VGE = 15V V
Tj = 125°C — 1.9 —
Cies Input capacitance — — 160
VCE = 10V
Coes Output capacitance — — 6.8 nF
VGE = 0V
Cres Reverse transfer capacitance — — 4.0
QG Total gate charge VCC = 600V, I C = 400A, VGE = 15V — 4400 — nC
td(on) Turn-on delay time — — 300
tr Turn-on rise time VCC = 600V, IC = 400A — — 100
ns
td(off) Turn-off delay time VGE1 = VGE2 = 15V — — 600
tf Turn-off fall time RG = 0.78Ω, Inductive load switching operation — — 300
trr (Note 1) Reverse recovery time IE = 400A — — 350 ns
Qrr (Note 1) Reverse recovery charge — 23.6 — µC
VEC(Note 1) Emitter-collector voltage IE = 400A, VGE = 0V — — 3.2 V
Rth(j-c)Q IGBT part — — 0.078
Thermal resistance*1
Rth(j-c)R FWDi part — — 0.09
°C/W
Rth(c-f) Contact thermal resistance Case to fin, Thermal compoundapplied*2 — 0.02 —
Rth(j-c’)Q Thermal resistance Tc measured point is just under the chips — — 0.045*3
RG External gate resistance 0.78 — 7.8 Ω
Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.

Sep.2000
 MITSUBISHI IGBT MODULES

CM400HU-24F
HIGH POWER SWITCHING USE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
800

SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 9.5 VGE = 15V
COLLECTOR CURRENT IC (A)

700 VGE = 20V Tj = 25°C

2.5
Tj = 125°C

COLLECTOR-EMITTER
15
600 9
11
2
500 10

400 1.5
8.5
300
1
200
8 0.5
100

0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 200 400 600 800

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE

VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
5 103
SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C Tj = 25°C
7
5
EMITTER CURRENT IE (A)

4
COLLECTOR-EMITTER

3
2
3
IC = 800A 102
2 IC = 400A 7
5

IC = 160A 3
1
2

0 101
6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

CAPACITANCE–VCE HALF-BRIDGE
CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
103
7 7 td(off)
CAPACITANCE Cies, Coes, Cres (nF)

5 5 tf
3 3 td(on)
SWITCHING TIMES (ns)

2 2
Cies
102 102
7 7
5 5
3 3
2 2 tr
Conditions:
101 101 VCC = 600V
7 7
5 5 VGE = ±15V
3 Coes 3 RG = 0.78Ω
2 2 Tj = 125°C
VGE = 0V Cres Inductive load
100 –1 100 1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

Sep.2000
 MITSUBISHI IGBT MODULES

CM400HU-24F
HIGH POWER SWITCHING USE

REVERSE RECOVERY CHARACTERISTICS TRANSIENT THERMAL

OF FREE-WHEEL DIODE IMPEDANCE CHARACTERISTICS
(TYPICAL) (IGBT part & FWDi part)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
REVERSE RECOVERY CURRENT lrr (A)

103 101

THERMAL IMPEDANCE Zth (j–c) (°C/W)

7 IGBT part:
REVERSE RECOVERY TIME trr (ns)

7 5 Per unit base = Rth(j–c) = 0.078°C/W

3 FWDi part:

NORMALIZED TRANSIENT
5
2 Per unit base = Rth(j–c) = 0.09°C/W
3 100
7
2 5
3 3
Irr 2 2
102 10–1 10–1
7 7
7 trr 5 5
5 Conditions: 3 3
VCC = 600V 2 2
3 VGE = ±15V 10–2 10–2
7 7
RG = 0.78Ω 5 5
2 Single Pulse
Tj = 25°C 3 3
Inductive load 2 TC = 25°C 2
101 1 10–3 10–3
10 2 3 5 7 102 2 3 5 7 103 10–5 2 3 5 710–4 2 3 5 7 10–3

EMITTER CURRENT IE (A) TMIE (s)

GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 400A
GATE-EMITTER VOLTAGE VGE (V)

18
16
14 VCC = 400V
12 VCC = 600V
10
8
6
4
2
0
0 1000 2000 3000 4000 5000 6000

GATE CHARGE QG (nC)

Sep.2000