SGP30N60

SGW30N60
Fast IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs G
• Designed for: E

- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability PG-TO-220-3-1 PG-TO-247-3-21

1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat) Tj Marking Package

SGP30N60 600V 30A 2.5V 150°C G30N60 PG-TO-220-3-1
SGW30N60 600V 30A 2.5V 150°C G30N60 PG-TO-247-3-21

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current IC A
TC = 25°C 41
TC = 100°C 30
Pulsed collector current, tp limited by Tjmax ICpul s 112
Turn off safe operating area - 112
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse EAS 165 mJ
IC = 30 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
2
Short circuit withstand time tSC 10 µs
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation Ptot 250 W
TC = 25°C
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature, Ts 260
wavesoldering, 1.6mm (0.063 in.) from case for 10s

1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.

1 Rev. 2.3 Sep. 07

 SGP30N60
SGW30N60
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.5 K/W
junction – case
Thermal resistance, RthJA PG-TO-220-3-1 62
junction – ambient PG-TO-247-3-21 40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 30 A
T j =2 5 °C 1.7 2.1 2.4
T j =1 5 0° C - 2.5 3.0
Gate-emitter threshold voltage VGE(th) I C = 70 0 µA , V C E = V G E 3 4 5
Zero gate voltage collector current ICES V C E = 60 0 V, V G E = 0 V µA
T j =2 5 °C - - 40
T j =1 5 0° C - - 3000
Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA
Transconductance gfs V C E = 20 V , I C = 30 A - 20 - S
Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 1600 1920 pF
Output capacitance Coss V G E = 0V , - 150 180
Reverse transfer capacitance Crss f= 1 MH z - 92 110
Gate charge QGate V C C = 48 0 V, I C =3 0 A - 140 182 nC
V G E = 15 V
Internal emitter inductance LE PG-TO-220-3-1 - 7 - nH
measured 5mm (0.197 in.) from case PG-TO-247-3-21 - 13
2)
Short circuit collector current IC(SC) V G E = 15 V ,t S C ≤ 10 µs - 300 - A
V C C ≤ 6 0 0 V,
T j ≤ 1 5 0° C

2)
Allowed number of short circuits: <1000; time between short circuits: >1s.

2 Rev. 2.3 Sep. 07

 SGP30N60
SGW30N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =2 5 °C , - 44 53 ns
V C C = 40 0 V, I C = 3 0 A,
Rise time tr - 34 40
V G E = 0/ 15 V ,
Turn-off delay time td(off) R G =11Ω , - 291 349
1)
Fall time tf L σ = 18 0 nH , - 58 70
1)
C σ = 90 0 pF
Turn-on energy Eon - 0.64 0.77 mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.65 0.85
Total switching energy Ets reverse recovery. - 1.29 1.62

Switching Characteristic, Inductive Load, at Tj=150 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =1 5 0° C - 44 53 ns
V C C = 40 0 V, I C = 3 0 A,
Rise time tr - 34 40
V G E = 0/ 15 V ,
Turn-off delay time td(off) R G = 1 1Ω , - 324 389
1)
Fall time tf L σ = 18 0 nH , - 67 80
1)
C σ = 90 0 pF
Turn-on energy Eon - 0.98 1.18 mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.92 1.19
Total switching energy Ets reverse recovery. - 1.90 2.38

1)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

3 Rev. 2.3 Sep. 07

 SGP30N60
SGW30N60
160A
Ic tp=4µs
100A
140A
15µs
120A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

100A 50µs
10A

80A 200µs
TC=80°C
1ms
60A
TC=110°C 1A
40A

Ic DC
20A

0A 0.1A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C, Tj ≤ 150°C)
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 11Ω)

300W 60A

250W 50A

Limited by bond wire

IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION

200W 40A

150W 30A

100W 20A

50W 10A

0W 0A
25°C 50°C 75°C 100°C 125°C 25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function Figure 4. Collector current as a function of
of case temperature case temperature
(Tj ≤ 150°C) (VGE ≤ 15V, Tj ≤ 150°C)

4 Rev. 2.3 Sep. 07

 SGP30N60
SGW30N60
90A 90A

80A 80A

70A 70A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

60A VGE=20V 60A VGE=20V
15V 15V
50A 50A
13V 13V
11V 11V
40A 40A
9V 9V
7V 7V
30A 30A
5V 5V
20A 20A

10A 10A

0A 0A
0V 1V 2V 3V 4V 5V 0V 1V 2V 3V 4V 5V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics Figure 6. Typical output characteristics
(Tj = 25°C) (Tj = 150°C)

100A 4.0V
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE

90A
Tj=+25°C
3.5V
80A -55°C IC = 60A
+150°C
70A
IC, COLLECTOR CURRENT

3.0V
60A

50A 2.5V IC = 30A

40A
2.0V
30A

20A
1.5V
10A

0A 1.0V
0V 2V 4V 6V 8V 10V -50°C 0°C 50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter
(VCE = 10V) saturation voltage as a function of junction
temperature
(VGE = 15V)

5 Rev. 2.3 Sep. 07

 SGP30N60
SGW30N60
1000ns 1000ns
td(off)

td(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns tf 100ns tf

td(on)
td(on) tr

tr

10ns 10ns
10A 20A 30A 40A 50A 60A 0Ω 10Ω 20Ω 30Ω 40Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V, (inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 11Ω, VGE = 0/+15V, IC = 30A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

1000ns
5.5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE

5.0V
td(off)
4.5V
t, SWITCHING TIMES

4.0V max.
100ns

3.5V
tf
tr typ.
3.0V
td(on)

2.5V
min.

10ns 2.0V
0°C 50°C 100°C 150°C -50°C 0°C 50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage
function of junction temperature as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V, (IC = 0.7mA)
IC = 30A, RG = 11Ω,
Dynamic test circuit in Figure E)

6 Rev. 2.3 Sep. 07

 SGP30N60
SGW30N60

5.0mJ 4.0mJ
*) Eon and Ets include losses Ets* *) Eon and Ets include losses
4.5mJ due to diode recovery. due to diode recovery.
3.5mJ
4.0mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

3.0mJ
3.5mJ
Ets*
2.5mJ
3.0mJ
Eon*
2.5mJ 2.0mJ

2.0mJ Eoff
1.5mJ Eoff
1.5mJ Eon*
1.0mJ
1.0mJ
0.5mJ
0.5mJ

0.0mJ 0.0mJ
10A 20A 30A 40A 50A 60A 70A 0Ω 10Ω 20Ω 30Ω 40Ω
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V, (inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 11Ω, VGE = 0/+15V, IC = 30A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

3.0mJ 0
10 K/W

*) Eon and Ets include losses

due to diode recovery. D=0.5
ZthJC, TRANSIENT THERMAL IMPEDANCE

2.5mJ
0.2
E, SWITCHING ENERGY LOSSES

-1
10 K/W
0.1
2.0mJ
Ets* 0.05

0.02
-2
1.5mJ 10 K/W
R,(1/W) τ, (s)
0.01 0.3681 0.0555
1.0mJ Eon* 0.0938 1.26*10-3
0.0380 1.49*10-4
Eoff -3
10 K/W
R1 R2
0.5mJ
single pulse
C 1= τ1/R 1 C 2= τ2/R 2
-4
0.0mJ 10 K/W
0°C 50°C 100°C 150°C 1µs 10µs 100µs 1ms 10ms 100ms 1s

Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH

Figure 15. Typical switching energy losses Figure 16. IGBT transient thermal
as a function of junction temperature impedance as a function of pulse width
(inductive load, VCE = 400V, VGE = 0/+15V, (D = tp / T)
IC = 30A, RG = 11Ω,
Dynamic test circuit in Figure E)

7 Rev. 2.3 Sep. 07

 SGP30N60
SGW30N60
25V

Ciss
20V 120V 1nF
VGE, GATE-EMITTER VOLTAGE

480V

C, CAPACITANCE
15V

Coss

10V 100pF

Crss

5V

0V 10pF
0nC 50nC 100nC 150nC 200nC 0V 10V 20V 30V
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge Figure 18. Typical capacitance as a
(IC = 30A) function of collector-emitter voltage
(VGE = 0V, f = 1MHz)

25 µ s 500A

450A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT

20 µ s
tsc, SHORT CIRCUIT WITHSTAND TIME

400A

350A

15 µ s 300A

250A

10 µ s 200A

150A

5µ s 100A

50A

0µ s 0A
10V 11V 12V 13V 14V 15V 10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector
function of gate-emitter voltage current as a function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C) (VCE ≤ 600V, Tj = 150°C)

8 Rev. 2.3 Sep. 07

 SGP30N60
SGW30N60
PG-TO-220-3-1

9 Rev. 2.3 Sep. 07

 SGP30N60
SGW30N60

PG-TO247-3-21

10 Rev. 2.3 Sep. 07

 SGP30N60
SGW30N60
τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

TC

Figure D. Thermal equivalent

circuit

Figure A. Definition of switching times

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Leakage inductance Lσ =180nH
an d Stray capacity C σ =900pF.

11 Rev. 2.3 Sep. 07

 SGP30N60
SGW30N60

Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 9/13/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

12 Rev. 2.3 Sep. 07