AON6414A

30V N-Channel MOSFET

General Description Product Summary

The AON6414A uses advanced trench technology to VDS 30V

provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30A
suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) < 8mΩ
general purpose applications.
RDS(ON) (at VGS=4.5V) < 10.5mΩ

100% UIS Tested

100% Rg Tested

DFN5X6 D
Top View
Top View Bottom View
1 8

2 7

3 6

4 5
G

PIN1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
TC=25°C G 30
Continuous Drain TC=25°C I ID 50
A
Current TC=100°C 30
Pulsed Drain Current C IDM 140
Continuous Drain TA=25°C 13
IDSM A
Current TA=70°C 10
C
Avalanche Current IAS, IAR 35 A
Avalanche energy L=0.05mH C EAS, EAR 31 mJ
VDS Spike 100ns VSPIKE 36 V
TC=25°C 31
PD W
Power Dissipation B TC=100°C 12.5
TA=25°C 2.3
PDSM W
Power Dissipation A TA=70°C 1.5
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 17 21 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 44 53 °C/W
Maximum Junction-to-Case Steady-State RθJC 3.4 4 °C/W

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 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 1.95 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 140 A
VGS=10V, ID=20A 6.6 8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 9.5 11.4
VGS=4.5V, ID=20A 8.2 10.5 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 55 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 1 V
IS Maximum Body-Diode Continuous Current 35 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 920 1150 1380 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 125 180 235 pF
Crss Reverse Transfer Capacitance 60 105 150 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.55 1.1 1.65 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 16 20 24 nC
Qg(4.5V) Total Gate Charge 7.6 9.5 11.4 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 2 2.7 3.2 nC
Qgd Gate Drain Charge 3 5 7 nC
tD(on) Turn-On DelayTime 6.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 3.5 ns
trr Body Diode Reverse Recovery Time µ
IF=20A, dI/dt=500A/µs 7 8.7 10.5 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 11 13.5 16 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. The maximum current rating is limited by silicon

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.4.0 March 2013 www.aosmd.com Page 2 of 6

 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

140 100
10V 6V VDS=5V
120 5V
7V 80
100
4.5V
80 60
ID (A)

ID(A)
4V
60
40

40
3.5V
20 125°C
20 25°C
VGS=3V
0 0
0 1 2 3 4 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

12 1.8
VGS=10V
Normalized On-Resistance

10 ID=20A
1.6
VGS=4.5V
Ω)
RDS(ON) (mΩ

8 1.4
17
VGS=4.5V
5
6 1.2 ID=20A 2
VGS=10V 10
4 1

2 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A) Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)
18

25 1.0E+02
ID=20A
1.0E+01
20
40
1.0E+00
125°C
Ω)

15 25°C
RDS(ON) (mΩ

1.0E-01
IS (A)

125°C
1.0E-02
10

1.0E-03
5
1.0E-04
25°C
0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1600
VDS=15V
ID=20A 1400
8 Ciss
1200

Capacitance (pF)
1000
VGS (Volts)

6
800
4 600

400
2 Coss
200
Crss
0 0
0 5 10 15 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

TJ(Max)=150°C
100.0 10µs 10µs 160 TC=25°C
RDS(ON)
limited 100µs
Power (W)
ID (Amps)

10.0 120 17
1ms
5
DC 10ms
1.0 80 2
10
0.1 TJ(Max)=150°C 40
TC=25°C
0.0
0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18Junction-to-
Figure 10: Single Pulse Power Rating
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

1 RθJC=4°C/W 40

0.1

Single Pulse PD
0.01
Ton
T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

70 35
TA=25°C
IAR (A) Peak Avalanche Current

60 30

Power Dissipation (W)

50 TA=150°C 25

40 TA=100°C 20

30 15

20 10

TA=125°C 5
10

0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150
Time in avalanche, tA (s) °C)
TCASE (°
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

40 10000

TA=25°C
30 1000
Current rating ID(A)

17
Power (W)

100
5
20
2
10
10 10

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
°C)
TCASE (° Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

1 RθJA=53°C/W 40

0.1

PD
0.01
Single Pulse Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.4.0 March 2013 www.aosmd.com Page 5 of 6

 Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.4.0 March 2013 www.aosmd.com Page 6 of 6