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Hall Effect: Aim of The Experiment
Hall Effect: Aim of The Experiment
Hall effect
Apparatus Required:
Basic Theory:
Hall effect can be used to find the concentration and type (electrons/holes) of majority charge
carriers in an extrinsic semiconductor. A voltage is developed across the width of the
semiconductor sample when it is subjected to mutually perpendicular electric field and
magnetic field. This voltage is discovered to be the Hall Voltage and the phenomenon is
called as the Hall Effect, named after its discoverer. The direction of motion of the electrons
or holes can be found out using Fleming’s right hand rule.
VH t Volt.m
RH
IB Amp.Tesla
Here, VH – Hall voltage developed, I- Current passing through the sample, B – Magnetic
field applied, t – Thickness of the semiconductor crystal
VH = VHB – VH0 (VHB – in presence of magnetic field, VH0 – zero field potential)
Initial Adjustments
1. A suitable air gap (about 1 cm) is introduced between the pole pieces of the
electromagnet.
2. Never exceed the input current (I) beyond 10 mAmp.
Procedure:
0.75
1.00
1.25
1.50
1.75
Mean R
Calculations:
20
Page
VIT University, Vellore Campus Materials Science Lab Manual and Record
Date: Reg. No.
Results:
The Hall coefficient of the given semiconductor crystal was found to be:
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