P age |v

Table of Contents
4 BJT ModelsEquation Chapter (Next) Section 1 .................................................. 130
4.1 H parameters .................................................................................................... 130
4.2 Analysis of a CE amplifier using h-parameters ............................................... 133
4.3 CE Amplifier with Partially Decoupling .......................................................... 141
4.4 Analysis of the Common Collector Amplifier Using H-parameters ................ 143
4.5 Analysis of the CB Amplifier Using h-parameters .......................................... 147
4.6 Analysis of Multiple Transistor Circuits .......................................................... 149
References .................................................................................................................. 150
Problems ..................................................................................................................... 150
 P a g e | 130

4 BJT Models
In chapter Error! Reference source not found., the BJT was introduced and its method of
operation discussed. The need for biasing was established and various biasing schemes
presented. Also, the operation of the BJT as an amplifier in three configurations was discussed.
While the methods utilized gave reasonably good answers, more precise design requires the use
of a BJT model or equivalent circuit. The model we adopt is referred to as hybrid parameters or h
parameters. These transistor parameters can in general be obtained from manufacturer’s data
sheets. At the end of this chapter the student will be able to
• Explain H parameters
• Use H parameters in the analysis of transistor circuits

4.1 H parameters
Small signal amplifiers are amplifiers that are assumed to operate over the linear range of the
active device (BJT or FET) by using only small signal voltages and currents. Therefore the AC
operation may be deduced by representing the transistor by an equivalent circuit consisting of
linear signal generators and circuit elements. In deducing this equivalent circuit, the transistor is
regarded as an active two port network as shown in Figure 4.1, i.e. it has two input terminals and
two output terminals.
Ii Io

Vi Vo

Figure 4.1 Transistor as an Active Two-Port Network

There are four external variables, the input voltage and current Vi and Ii and output voltage
and current Vo and Io. Since operation takes place over the linear range of transistor
characteristics (small signal operation), Vi, Ii, Vo and Io can be related to each other by constant
parameters. Thus Vi and Io can be related to Vo and Ii by four constants, called hybrid or h-
parameters giving
Vi = hi Ii + hoVo (2.1)
 P a g e | 131

I O = h f I i + hoVo (2.2)

which can be represented as shown in Figure 4.2. (Note that there are other ways of relating the
four variables. See chapter Error! Reference source not found.)

Ii hi Io

Vi hrVo hfIi 1/ho Vo

Eqn1 Eqn2
Figure 4.2 Transistor H-Parameter Equivalent Circuit

Under small signal conditions,

Vi
hi = Vo = 0 input impedance with short-circuited output (2.3)
Ii

Io
hf = Vo = 0 forward current gain with short-circuited output (2.4)
Ii

Vi
hr = Ii = 0 voltage feedback ratio with open-circuited input (2.5)
Vo

Io
ho = Ii = 0 output admitance with open-circuited input (2.6)
Vo
The values of these parameters depend on the transistor configuration. In order to distinguish
among the three configurations, i.e., CE, CB and CC, a second subscript is added to each h-
parameter. Thus for the CE configuration, hi becomes hie while for the CB it is hib and CC, hic and

so on for the other parameters.

Now for the common emitter configuration, hie is the ratio of a small change in input voltage

(ΔVi) to the resulting small change in input current (ΔIi) which for this configuration is the input
impedance. Hence from equation Error! Reference source not found. in chapter Error!
Reference source not found.,
h fe
hie = (2.7)
40 I C

Here h fe is the ratio of the change in output current to the change in input current producing it

and hence
 P a g e | 132

h fe =  (2.8)

150
hfe

100
Current Gain

50

Ic mA
0
1 10 100 1000
Collector Current
Figure 4.3 Transistor Current Gain against Collector Current

The actual value of h fe is a function of the transistor collector current I C , temperature and

signal frequency. Figure 4.3 shows a typical plot of h fe against collector current.

3
Normalised Current Gain

0
-100 -50 0 50 100 150 200
Temperature (K)
Figure 4.4 Transistor Current Gain against Temperature

It can be seen that h fe initially increases with collector current but reaches a maximum at

around 20mA. Manufactures generally state the maximum value of h fe and the associated
 P a g e | 133

collector current at which it attains this value. A plot of current gain against temperature is
shown in Figure 4.4 where h fe increases with temperature by as much as twice its value over a

temperature change from 20oC to 80oC. Finally, the current gain h fe of a transistor varies with

signal frequency, its value falling off at higher frequencies. This is illustrated in Figure 4.5. f  is

the frequency at which the current gain falls by 3dB of its low frequency value and is referred to
as the cut-off frequency of the transistor. The frequency at which the current gain falls to unity is
called the transition frequency ft .

1000

100
|hFE|

10

1
0.1 1 10 100 1000 10000
Frequency (MHz)
Figure 4.5 Transistor Current Gain against Frequency

4.2 Analysis of a CE amplifier using h-parameters

We are now ready to use the h-parameter equivalent circuit to analyse an amplifier circuit.
Specifically we wish to study the CE amplifier configuration. Now the h-parameter model is
valid only for linear systems and since the transistor characteristics are nonlinear, the signals
must be restricted to small voltage and current variations about the Q point such that the
transistor operates approximately linearly. In such circumstances, the h-parameters can be used
to analyse transistor networks for the small time-varying components of signals and not the DC
component.
Consider the basic CE circuit shown in Figure 4.6 in which the biasing components have been
omitted for simplicity. In an AC equivalent circuit, the battery is a short circuit to AC. Thus
 P a g e | 134

replacing the transistor by the h-parameter equivalent circuit yields Figure 4.6 (left) which
becomes Figure 4.6 (right) after re-arranging. This is called the AC equivalent circuit for the CE
amplifier. Since hre  0 and assuming 1/ hoe  RL , then this circuit can be reduced to that shown

in Figure 4.7.

RL Ii hie Io

B
C 1/hoe IL
Vo
Vi hre Vo hfe Ii RL
E

Eqn1 Eqn2
Figure 4.6 – Common Emitter Amplifier (left) and its Equivalent Circuit (right)

All of the linear circuit laws including those of Ohm, Thevenin, Norton, Kirchhoff and the
Superposition Theorem can now be applied since the non-linear transistor has been linearised
about the operating point. We can now derive an expression for the voltage gain Av of the

amplifier, where Av = Vo / Vi .

Ii hie Io
IL
1/hoe
Vo
Vi hfe Ii RL

Eqn1 Eqn2
Figure 4.7 Modified Equivalent Circuit

From Figure 4.7,

Vo = −h feib RL (2.9)

Vi = hieib (2.10)

and therefore the voltage gain Av = Vo / Vi is given by

Vo −h fe RL
AV = = (2.11)
Vi hie
 P a g e | 135

The negative sign is indicative of an inversion between the output voltage and the input voltage.
Similarly, the current gain Ai = Io / Ii , is given by

I o h feib
Ai = = = h fe (2.12)
Ii ib

The input impedance Zi can be obtained from (2.10). Zi is the ratio of the applied input voltage to

the input current ib i.e.,

Vi
Zi = = hie (2.13)
ib

In order to determine the output impedance Zo , we first find the Thevenin equivalent of the

amplifier output. Then Zo = vos / isc where voc is the open-circuit voltage and isc is the short-circuit

current. The open-circuit output voltage is

voc = −h feib RL (2.14)

The short circuit output current is obtained by short-circuiting the output, i.e., resistor RL giving
isc = −h feib (2.15)

Therefore the output impedance is given by

voc −h feib RL
Zo = = = RL (2.16)
I sc −h fi ib

If the parameter 1/ hoe is included, then it will appear in parallel with RL in the open-circuit

1
output voltage voc = − h fe ib RL // . The output impedance then becomes
hoe

1
Z o = RL / / (2.17)
hoe

RB RL hie

1/hoe
Vo
Vi RB hfeIi RL

Figure 4.8 Fixed-Bias Common Emitter Amplifier with Equivalent Circuit

 P a g e | 136

Consider now the practical CE amplifier circuit with fixed bias and coupling capacitors shown
in Figure 4.8. We assume that the capacitors are sufficiently large so that they are short circuits
to AC for the frequencies involved. Noting again that the DC supply is a short circuit to AC, the
h-parameter equivalent circuit is shown in Figure 4.8. The resistor RB connected to the transistor
base is grounded through the DC supply.
The expressions for the voltage gain and the output impedance are unaffected but since RB
appears in parallel with hie the input impedance is reduced. Hence

Z i = hie RB (2.18)

The current gain is slightly reduced since some of the signal current flow into RB . However
since RB  hie this reduction is very small.

Example 4.1
20V

10k
1.93M
Vo
Vi
10F

Figure 4.9 Common Emitter Amplifier

For the common emitter amplifier shown in Figure 4.9, draw the equivalent circuit using h-
parameters. Then for a collector current of 1mA, determine the voltage gain and input
impedance.

Vi Ib Vo
hfe Ib
1.93M hie 10k

Figure 4.10 Equivalent Circuit of Common Emitter Amplifier

 P a g e | 137

h fe 100
Solution: The equivalent circuit is shown in fig. 4.10. For this circuit, hie = = = 2.5k .
40I C 40  1mA

Hence from (2.18) the input impedance is given by Z i = 2.5k 1.93M  2.5k . From (2.11) the

− 100  10k
voltage gain is given by AV = = −400 .
2.5k

Example 4.2
20V

10k
1.93M 10F
Vo
Vi
10F 20k

Figure 4.11 Common Emitter Amplifier Driving a Load

The circuit of Example 4.1 is used to drive a 20k load as shown in Figure 4.11. Draw the
equivalent circuit using h-parameters and determine the voltage gain and input impedance.

Vi Ib
Vo
hfe Ib
1.93M hie 10k 20k

Figure 4.12 Equivalent Circuit of Common Emitter Amplifier Driving a Load

Solution: The only change in the equivalent circuit is the inclusion of the 20k load resistor in
parallel with the 10k collector resistor as shown in Figure 4.12. Thus the input impedance
− 100  10k // 20k
remains the same but the voltage gain is reduced to AV = = −267
2.5k
For the common emitter amplifier with H-bias shown in Figure 4.13, we approach the
drawing of the AC equivalent as before.
 P a g e | 138

+VCC

R1 RL

C1
C2

R2 RE C3

Figure 4.13 H-Bias Common Emitter Amplifier

Ib hie Io
IL
1/hoe
Vo
Vi R1 R2 hfe Ib RL

Figure 4.14 Equivalent Circuit of H-Bias Common Emitter Amplifier

We short circuit all capacitors and the DC supply. The resulting AC equivalent circuit is shown
in Figure 4.14. Bias resistors R1 and R2 appear in parallel with hie with no other changes. Hence,

the voltage gain remains the same as in the fixed bias case but the input impedance
becomes Z i = R1 R2 hie . The current gain changes since some of the signal current is lost in the

bias resistors. The fraction that flows into the base ib / ii is using the current divider theorem

given by
ib R1 R2
= (2.19)
ii hie + R1 R2

Hence
io io ib R1 R2
Ai = =  = h fe  (2.20)
ii ib ii hie + R1 R2
 P a g e | 139

+VCC

R1 RL

RS C1
C2

R2 RE C3

Figure 4.15 Common Emitter Amplifier with Input Resistor

RS Ib hie Io
IL
1/hoe
Vi Vo
R1 R2 hfe Ib RL

Figure 4.16 Equivalent Circuit of Common Emitter Amplifier with Input Resistor

Thus the current gain suffers attenuation when bias components are introduced. For the H-biased
common emitter circuit involving a source resistor RS connected in series with the input as

shown in Figure 4.15, the equivalent circuit is shown in Figure 4.16. RS in conjunction with the

resistors R1 , R2 and hie form a potential divider and hence introduce voltage signal alternation. The

voltage gain AV is given by

Vo V Vb
AV = =  (2.21)
Vi Vb Vi

Now
Vo −h fe RL
= (2.22)
Vb hie
and
Vb Zi
= (2.23)
Vi RS + Z i
where
 P a g e | 140

Zi = R1 / / R2 / / hie (2.24)

Hence
− Z i h fe RL
AV = . (2.25)
RS + Z i hie

The input impedance Z i would now be Zi = RS + Zi

Example 4.3
+VCC=20

RL=9k
R1=174k
Co
Vo
Ci
Vi

R2=27k
CE
RE=2k

Figure 4.17 H-Biased Common Emitter Amplifier

For the circuit shown in Figure 4.17, draw the h-parameter equivalent circuit and determine
voltage gain, circuit gain, input impedance and output impedance.
Vi Vo
hfe Ib
174k 27k hie 9k

Figure 4.18 Equivalent Circuit of amplifier in Figure 4.17

Solution: The equivalent circuit is shown in Figure 4.18. The collector current is easily shown to
h fe 100
be 1mA and hence hie = = = 2.5k . Hence the voltage gain is given by
40I C 40  1mA

− 100  9k
AV = = −360 . Using (4.20) current gain
2.5k
 P a g e | 141

R1 R2 27k //173k
Ai = h fe  = 100  = 90 . From (2.24) the input impedance is given
hie + R1 R2 2.5k + 27k //173k

by Zi = R1 // R2 // hie = 27k //173k // 2.5k = 2.3k . The output impedance is simply the 9k load
resistor.
If a 15k external load resistor is added to the circuit of Figure 4.17, then the equivalent circuit
in Figure 4.18 is modified by the inclusion of a 15k resistor in parallel with the 9k collector
− 100  9k //15k
resistor. The voltage gain becomes AV = = −225 . The current gain defined by the
2.5k
ratio of the current into the 15k resistor to the input current is given by
R1 R2 9k
Ai = h fe   = 90  .375 = 33.8 . The input impedance remains the same.
hie + R1 R2 9k + 15k

4.3 CE Amplifier with Partially Decoupling

+VCC

RL
R1
C1
C2

R2 Re

RE C3

Figure 4.19 Common Emitter Amplifier with Partially Decoupled Emitter Resistor

The next amplifier to be discussed is the CE amplifier shown in Figure 4.19 in which the emitter
resistor is only partially by-passed. The equivalent circuit is shown in Figure 4.20. Note that
while RE is short-circuited by the capacitor C3 , Re is not and therefore appears in the equivalent

circuit. Note that both ib and h feib flow into Re . Hence, at the input we have
 P a g e | 142

Vi = ib hie + ( ib + h feib ) Re
(2.26)
(
= ib hie + (1 + h fe ) Re )
At the output
Vo = −h feib RL (2.27)

Hence the voltage gain of the circuit is given by

Vo − h fe RL
AV = = (2.28)
Vi hie + (1 + h fe ) Re

Zin Zin

Ib hie Io
IL
1/hoe
hfe Ib
Vi R1 R2 RL Vo

Re

Figure 4.20 Equivalent Circuit to Figure 4.19

Since h fe is large 1 + h fe  h fe . Therefore, dividing through by h fe we get

− RL
AV = , where re = hie / h fe (2.29)
Re + re

If Re is large, then Re  re and (2.29) reduces to

− RL
AV  (2.30)
Re

The output impedance is the ratio of the open-circuit output voltage to the short-circuit output
current, i.e.,
−h feib RL
Zo = = RL (2.31)
−h feib

The circuit input impedance is found by first finding the ratio Vi / ib which is from (2.26)

= hie + (1 + h fe ) Re
Vi
Z i = (2.32)
ib
 P a g e | 143

This impedance is clearly in parallel with R1 and R2 and hence


Zi = R1 R2 hie + (1 + h fe ) Re  (2.33)

Comparing this circuit with the CE amplifier with completely bypassed emitter resistor, firstly,

the voltage gain magnitude goes from h fe RL = RL to RL i.e., the presence of R significantly
e
hie re re + Re

reduces the voltage gain. Secondly the input impedance changes from hie to hie + (1 + h fe ) Re

(ignoring the effect of R1 and R2 ). Re causes an even more dramatic increase in the input

impedance, looking into the transistor base. In practice, however, R1 and R2 limit the input
impedance increase.
If a resistor RL is connected to C2 and grounded, this represents a load on the CE amplifier.

This resistor appears in parallel with RL in the equivalent circuit. Hence RL → RL RL . The effect

of this is to reduce the voltage gain AV . Thus loading the CE amplifier reduces the voltage gain.

Example 4.4
In the circuit of Figure 4.19 consider the case where the emitter resistor is split such that only
1.6k is bypassed. Determine the voltage gain and input impedance.
Solution: Using the circuit nomenclature of Figure 4.19, Re = 400 and RE = 1.6k . Then from

−9
(2.29) the voltage gain is given by AV = = −21 . This is significantly reduced from the
0.4 + 0.025
−9
original value of AV = = −360 as a result of the presence of the unbypassed 400Ω resistor.
0.025
This resistor also affects the input resistance which becomes
Z i = 27k 173k 2.5k + (1 + 100)0.4k  = 27k // 173k // 42.9k = 11k .

4.4 Analysis of the Common Collector Amplifier

Using H-parameters
In this section we will utilise the CE h-parameter BJT equivalent circuit to analyse the CC
amplifier. Consider the basic CC circuit shown in Figure 4.21 (left) in which bias components
have been excluded.
 P a g e | 144

C
B B Ib hie Io E

E
Vi RE
Vi hfe Ib Vo
RE Vo

C
Figure 4.21 Common Collector Amplifier Circuit (left) and Equivalent Circuit (right)

The equivalent circuit using CE h-parameters is shown in Figure 4.21 (right). RS and

VS represent the Thevenin equivalent of the driving stage. Using previous approximations,

since hre  0 , hreVce can be neglected and if 1 / hoe  RE , it can also be neglected. Using

Kirchhoff’s voltage law,

Vi = ib ( hie ) + (1 + h fe ) ib RE (2.34)

Vo = (1 + h fe ) ib RE (2.35)

Hence the voltage gain AV from base to emitter is given by

Av =
Vo
=
(1 + hfe ) ib RE = RE (2.36)
Vi  
(1 + hfe ) RE + hie ib RE + re
From (2.36), it follows that AV  1. Since re  RE in most instances, AV  1 for the CC amplifier.

Note that output and input voltages are in phase. To calculate the input impedance, we need to
find the ratio Vi / ib . From equation (2.34),

= hie + (1 + h fe ) RE
Vi
Zi = (2.37)
ib

Thus the input impedance is quite large since h fe  1 . For h-type biasing, two bias resistors

R1 and R2 would now appear in parallel with Z i such that the changed input impedance is given

by
Z i = R1 / / R2 / / hie + (1 + h fe ) RE (2.38)
 P a g e | 145

In order to calculate the output impedance, we short circuit the input voltage source VS and
apply a voltage V at the output and find the corresponding current I flowing into the emitter
(ignoring RE) as shown in Figure 4.22.

B hie I E
Ib

hfe Ib V

C
Figure 4.22 Determining Output Impedance of Common Collector Amplifier

Then,
V = ib (hie + RS ) (2.39)

I = ib (1 + h fe ) (2.40)

Hence
V RS + hie RS
Zo = = = + re (2.41)
I 1 + h fe h fe

RS
Since this is in parallel with RE , then Z o = RE Z o . Usually, Zo  RE giving Z o = + re . The
h fe

output impedance of the CC amplifier is quite low.

Example 4.5
For the amplifier circuit shown in Figure 4.23 where the collector current is 1mA, determine the
voltage gain, input impedance and output impedance.
+20volts

R1=93k

R2=107k
RE=10k

Figure 4.23 Common Collector Amplifier

 P a g e | 146

Solution: Using (2.36) the voltage gain is given by Av = RE =

10k
 1 . The input
RE + re 10k + .025k

impedance is given by Zi = 93k //107k // 2.5k + (1 + 100)10k where hie = 2.5k . The output

impedance is Zo = re = 25 .

The high input impedance and low output impedance of the common collector amplifier
makes it ideal for coupling the output of the common emitter amplifier to a load as shown in
Figure 4.24. The high input impedance prevents the loading down of the collector of the
common emitter amplifier while the low output impedance means that most of the output voltage
is dropped across the load. A final advantage of this two transistor arrangement is that the
common collector amplifier can be directly coupled to the collector of the common emitter
amplifier thereby eliminating the need for a coupling capacitor between these stages. The voltage
gain from the base remains approximately the same.
+VCC

R1 R4 Tr2

C1
C3
Tr1

R5 Vo
VS R2 R3 C2

Figure 4.24 Two-Stage Amplifier Using the Common Collector Amplifier

 P a g e | 147

4.5 Analysis of the CB Amplifier Using h-parameters

RL
R1

Vo
R2
RE V
i

Figure 4.25 Common Base Amplifier

Here we analyse the third configuration, namely the common base amplifier, using common
emitter h-parameters. A biased common base amplifier is shown in Figure 4.25 with its
equivalent circuit. Assuming hreVce  0 and 1/ hoe is large, the equivalent circuit reduces to that

shown in Figure 4.26. The input voltage Vi is given by

Vi = −ib hie (2.42)

while
Vo = −ib h fe RL (2.43)

Hence the voltage gain is given by

Vo −ib h fe RL h fe RL RL
Av = = = = (2.44)
Vi −ib hie hie re

Ib hie C Io
B IL
1/hoe
hfe Ib hfe Ib
E C
RL Vo Ib Io IL
E
RE hie RL Vo
RE Vi Vi

Figure 4.26 H Parameter Equivalent Circuit of Common Base Amplifier

Note that the voltage gain for the common base amplifier has the same magnitude as that for the
common emitter amplifier but unlike the common emitter amplifier the output and input voltages
 P a g e | 148

are in phase. In the common emitter amplifier, the output voltage is 180° out of phase with the
input voltage (represented by a negative sign) while in the common base amplifier the output
voltage is in phase with the input voltage.
To calculate the input impedance, Zi , we evaluate the input current I flowing into the emitter

of the BJT
I = −ib (1 + h fe ) (2.45)

Vi = −ib hie (2.46)

hence
Vi h
Zi = = ie = re (2.47)
I 1 + h fe

Hence, the input impedance of the common base amplifier is quite low and is comparable in
value to the output impedance of the common collector amplifier. This value is lowered even
further by RE which is effectively in parallel with Zi i.e. Z i = re RE . By short-circuiting the input

and applying a voltage at the output, the output impedance Zo is easily shown to be Z o = RL .

Example 4.6
+20volts

9k
174k

27k 2k

Figure 4.27 Common Base Amplifier

For the common base amplifier shown in Figure 4.27, determine the voltage gain, input
impedance and output impedance.
9k
Solution: The voltage gain is Av = = 360 while the input impedance is given by Z i = re RE .
.025
This yields Z i = 0.025k 2k  25 .
 P a g e | 149

4.6 Analysis of Multiple Transistor Circuits

Multiple transistor circuits involve more than one amplifier stages and may be necessary in order
to increase the overall circuit gain or to improve other amplifier characteristics. Analysis of such
circuits using h parameters can be done.

Example 4.7
Consider the two-transistor circuit shown in Figure 4.28. It comprises a common emitter
amplifier stage around Tr1, the output of which feeds into a second common emitter stage Tr2.
For this circuit determine the voltage gain and current gain.
+20V

6k 10k
173k 173k
Io

Is Tr2
Tr1
1k
27k 10k Vo
Vs 27k 500
2k

3.5k

Figure 4.28 Two-Stage Amplifier Circuit

Solution: The h-parameter equivalent circuit is shown in Figure 4.29. The DC voltage

VB1 ( DC ) at the base of Tr1 is given by VB1 = 27  20 = 2.7V . Hence VE1 = 2V , IC1 = 2 / 2k = 1mA
200
and hence hie1 = 100/(40 1) = 2.5k . Similarly VB 2 = 2.7V giving IC 2 = 2 / 4k = 0.5mA and

hie2 = 100/(40  0.5) = 5k . The voltage gain AV 1 of the first stage is AV 1 = −40IC1RL1 where

RL1 = 6k // 27k //173k //(hie2 + 101 0.5k ) = 4.4k . Hence AV 1 = −40 1 4.4k = −176 . The voltage

− RL 2 − 10k //10k
gain AV 2 of the second amplifier stage is AV 2 = = = −9 . Hence the
Re +
hie 2 0.5 k + 5k / 101
1 + h fe

overall voltage gain AV = AV 1  AV 2 = 176  9 = 1584. In order to determine the current gain
 P a g e | 150

IO
AI = we note that IO = VO /10k and I S = VS / Zi where Zi is the input impedance of amplifier
IS

VO I O RL I V Z 2.3k
given by Zi = 27k //173k // hie1 = 2.3k . Now AV = = giving O = O  i = 1584 .
VS I S Z i I S VS RL 10k

is ib1 hfe1ib1 hfe2ib2 io

hie2
hie1
10k
27k 6k 27k
vs vo
173k 173k 10k
500

Figure 4.29 Equivalent Circuit of Two-stage Amplifier

References
Boylestad, R. L. and L. Nashelsky, Electronic Devices and Circuit Theory, 10th ed., Prentice
Hall, New Jersey, 2009.
Yunik, M., The Design of Modern Transistor Circuits, Prentice Hall, New Jersey, 1973.

Problems
20V

10k
1.93M
Vo
Vi
10F

Figure 4.30 Question 1

P a g e | 151

1. Draw the h-parameter equivalent circuit for the common emitter amplifier shown in
Figure 4.30 and determine the voltage gain and input impedance. If a load resistor of 10k
is connected at the output, what will the new voltage gain?
2. Draw the h-parameter equivalent circuit of a common emitter H-biased amplifier circuit
and derive the expression for the voltage gain, input impedance and output impedance.
+VCC=20

RL=9k
R1=174k
Co
Vo
Ci
Vi

R2=27k
CE
RE=2k

Figure 4.31 Question 3

3. Draw the equivalent circuit for the amplifier shown in Figure 4.31 and determine the
voltage gain. If a load resistor of 5k is connected at the output, what will the new voltage
gain?
+VCC

RL
R1 173k 9k
C1
C2

R2 Re 500
27k
RE C3
2.5k

Figure 4.32 Question 4

4. Draw the equivalent circuit for the partially decoupled common emitter amplifier shown
in Figure 4.32 and determine the voltage gain and the input impedance.
P a g e | 152

5. For the amplifier circuit shown in Figure 4.33 where the collector current is 5mA,
determine the voltage gain, input impedance and output impedance. Evaluate the voltage
gain if an external load resistor of 12k is connected at the output.
+20volts

R1=18.6k

R2=21.4k
RE=2k

Figure 4.33 Question 5

6. The multi-stage amplifier shown in Figure 4.34 comprises a common emitter amplifier
driving a common collector amplifier. Draw the equivalent circuit of the amplifier and
determine the voltage gain VO / VS .
+24volts

R1 R4 Tr2
209k 10.8k
RS C1 C3
Tr1
1k
R5 Vo
VS R2 R3 C2 2k
31k 2.4k

Figure 4.34 Question 6

7. For the common base amplifier shown in Figure 4.35 determine the voltage gain, input
impedance and output impedance.
P a g e | 153

+16volts

7.2k
137k

23k 1.6k

Figure 4.35 Question 7

8. Draw the equivalent circuit of the two-stage amplifier in Figure 4.36. Determine the
voltage gain Vo/Vs and hence the current gain Io/Is. Assume hfe=100 for both transistors.
+30V

12k 10k
263k 126.5k
Io

Is Tr2
Tr1

37k 10k Vo
23.5k 500
Vs
6k

3.5k

Figure 4.36 Question 8

9. Draw the equivalent circuit of the two-stage amplifier in Figure 4.37. Determine the
voltage gain Vo/Vs and hence the current gain Io/Is. Assume hfe=100 for both transistors.
P a g e | 154

+20V

8k 10k
153k 163k
Io

Is Tr2
Tr1
1k
47k 8k Vo
Vs 37k
4k

6k

Figure 4.37 Question 9

10. Draw the equivalent circuit of the two-stage amplifier in Figure 4.38. Determine the
voltage gain Vo/Vs and hence the current gain Io/Is. Assume hfe=100 for both transistors.
+20V

12k 8k
163k 153k
Io

Is Tr2
Tr1

37k 8k Vo
Vs 47k 300
6k

3.7k

Figure 4.38 – Question 10