D

ARF448A(G)
G
ARF448B(G)
S TO-247 *G Denotes RoHS Compliant, Pb Free Terminal Finish.

Common
Source

RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz

The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
Specified 150 Volt, 40.68 MHz Characteristics: Low Cost Common Source RF Package.

¥ Output Power = 140 Watts. Very High Breakdown for Improved Ruggedness.

¥ Gain = 15dB (Class C) Low Thermal Resistance.

¥ Efficiency = 75% Nitride Passivated Die for Improved Reliability.

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter ARF448A/448B(G) UNIT

VDSS Drain-Source Voltage 450

Volts
VDGO Drain-Gate Voltage 450
ID Continuous Drain Current @ TC = 25°C 15 Amps
VGS Gate-Source Voltage ±30 Volts
PD Total Power Dissipation @ TC = 25°C 230 Watts
RqJC Junction to Case 0.55 °C/W
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 mA) 450

Volts
VDS(ON) On State Drain Voltage 1 (I D(ON) = 7.5A, VGS = 10V) 3
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25
IDSS mA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
gfs Forward Transconductance (VDS = 25V, ID = 7.5A) 5 8.5 mhos
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 2 5 Volts
7-2003

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-4908 Rev C

APT Website - http://www.advancedpower.com

 DYNAMIC CHARACTERISTICS ARF448A/448B(G)
Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Ciss Input Capacitance 1400 1700

VGS = 0V
Coss Output Capacitance VDS = 150V 150 200 pF
Crss f = 1 MHz
Reverse Transfer Capacitance 65 100
td(on) Turn-on Delay Time VGS = 15V 7 15
tr Rise Time VDD = 0.5 VDSS 5 10
ns
td(off) Turn-off Delay Time ID = ID[Cont.] @ 25°C 23 40
tf RG = 1.6W
Fall Time 12 25

FUNCTIONAL CHARACTERISTICS

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

GPS Common Source Amplifier Power Gain f = 40.68 MHz 13 15 dB

h Drain Efficiency VGS = 0V VDD = 150V 70 75 %

y Pout = 140W
Electrical Ruggedness VSWR 20:1 No Degradation in Output Power

1 Pulse Test: Pulse width < 380 mS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

30 3000
Class C
VDD = 150V Ciss
25
Pout = 250W
1000
CAPACITANCE (pf)

20
GAIN (dB)

500
Coss
15

10 Crss

5 100

0 50
10 20 30 40 50 60 65 1 5 10 50 150
FREQUENCY (MHz) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

25 70 10mS
TJ = -55°C
OPERATION HERE 100mS
ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

LIMITED BY RDS (ON)

20 VDS> ID (ON) x RDS (ON)MAX.
250mSEC. PULSE TEST
@ <0.5 % DUTY CYCLE 10 1mS
15 5

10mS
10
1 100mS
.5 DC
5 TC =+25°C
TJ = +125°C TJ = -55°C TJ =+150°C
050-4908 Rev B

TJ = +25°C SINGLE PULSE

0 .1
0 2 4 6 8 1 5 10 50 100 500
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area
 ARF448A/448B(G)
1.2 40
VGS=8, 10 & 15V

ID, DRAIN CURRENT (AMPERES)

1.1
VGS(th), THRESHOLD VOLTAGE
30
1.0
(NORMALIZED)

6.5V

0.9 20
6V

0.8
5.5V
10
0.7 5V

4.5V
0.6 0
-50 -25 0 25 50 75 100 125 150 1 5 10 15 20 25 30
TC, CASE TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5, Typical Threshold Voltage vs Temperature Figure 6, Typical Output Characteristics

300 17

GPS, COMMON SOURCE AMPLIFIER GAIN

Class C
VDD = 150V Class C
f = 40.68 MHz VDD = 150V
POUT, POWER OUT (WATTS)

240
16 f = 40.68 MHz

180

(dB)
15

120

14
60

0 13
0 2 4 6 8 10 60 120 180 0
240 300
PIN, POWER IN (WATTS) POUT, POWER OUT (WATTS)
Figure 7, Typical Power Out vs Power In Figure 8, Typical Common Source Amplifier Gain vs Power Out

0.6
D=0.5
Z JC, THERMAL IMPEDANCE (°C/W)

0.2
0.1
0.1
0.05
0.05

0.02 Note:
PDM

0.01 0.01 t1
SINGLE PULSE
0.005 t2

Duty Factor D = t1/t2

Peak TJ = PDM x ZqJC + TC
q

0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

Table 1 - Typical Class C Large Signal Input-Output Impedance

Freq. (MHz) Z in (W) Z OL (W)

2.0 20.90 - j 9.2 56.00 - j 06.0

7-2003

13.5 2.40 - j 6.8 37.00 - j 26.0

27.0 0.57 - j 2.6 18.00 - j 25.0
40.0 0.31 - j 0.5 9.90 - j 19.2
050-4908 Rev C

65.0 0.44 + j 1.9 4.35 - j 11.4

Z in - gate shunted by 25W
Z OL - conjugate of optimum load impedance for 250W at 150V
 ARF448A/448B(G)

40.68 MHz Test Circuit

Parts List
C1 -- 1800pF 100V chip
C2-C4 -- Arco 463 Mica Trimmer L4
C5-C7 -- 1nF 500V COG chip +
L1 -- 1" #16 AWG into hairpin ~9.6nH 150V
L2 -- 6t #16 AWG .25" ID ~165nH -
C6 C7
L3 -- 10t #18 AWG .25" ID ~0.47µH
L4 -- VK200-4B ferrite choke ~3µH
L3
R1 -- 25 Ohm 1/2W Carbon
T1 -- 9:1 Broadband Transformer C4 RF Output
L2 C5

L1 C3
RF Input DUT
T1

C1 C2 R1

40.48 MHz Test Circuit

TO-247 Package Outline

e3 100% Sn Plated

Top View
4.69 (.185)
5.31 (.209) 15.49 (.610)
1.49 (.059) 16.26 (.640)
2.49 (.098)
5.38 (.212) Dimensions in Millimeters and (Inches)
6.15 (.242) BSC 6.20 (.244) NOTE: The ARF446 and ARF447 comprise a symmetric
pair of RF power transistors and meet the same electrical
20.80 (.819) specifications. The device pin-outs are the mirror image
Source

21.46 (.845)
of each other to allow ease of use as a push-pull pair.
3.55 (.138)
3.81 (.150)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123)
Device
0.40 (.016) 1.65 (.065)
0.79 (.031) 19.81 (.780) 2.13 (.084) ARF448A ARF448B
20.32 (.800)
1.01 (.040) Gate Drain
1.40 (.055)
Source Source
Drain Gate

2.21 (.087)
5.45 (.215) BSC
7-2003

2.59 (.102)
2-Plcs.
050-4908 Rev C