D

ARF464A
G
ARF464B
S TO-247
Common
Source

RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE 65V 100W 100MHz

The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 65 Volt, 81.36 MHz Characteristics: • Low Cost Common Source RF Package.
• Output Power = 100 Watts. • Low Vth thermal coefficient.
• Gain = 13dB (Class AB) • Low Thermal Resistance.
• Efficiency = 75% (Class C)

Y
• Optimized SOA for Superior Ruggedness.

R
A
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

IN
Symbol Parameter ARF464A/B UNIT

VDSS Drain-Source Voltage 200

M
Volts

I
VDGO Drain-Gate Voltage 200

L
ID Continuous Drain Current @ TC = 25°C 15 Amps

E
VGS Gate-Source Voltage ±30 Volts

R
PD Total Power Dissipation @ TC = 25°C 180 Watts
RqJC

TJ,TSTG

TL
P
Junction to Case

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

0.70
-55 to 150
300
°C/W

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 200

Volts
VDS(ON) On State Drain Voltage 1 (I D(ON) = 7.5A, VGS = 10V) 3.0
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
gfs Forward Transconductance (VDS = 25V, ID = 7.5A) 2 3.5 5 mhos
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 5 Volts
050-5999 Rev - 7-2001

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
 DYNAMIC CHARACTERISTICS ARF464A/B
Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Ciss Input Capacitance 775 1000

VGS = 0V
Coss Output Capacitance VDS = 150V 340 480 pF
Crss f = 1 MHz
Reverse Transfer Capacitance 150 230
td(on) Turn-on Delay Time VGS = 15V 6 12
tr Rise Time VDD = 0.5 VDSS 9 18
ns
td(off) Turn-off Delay Time ID = ID[Cont.] @ 25°C 13 20
tf RG = 1.6W
Fall Time 3.4 10

FUNCTIONAL CHARACTERISTICS

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

GPS Common Source Amplifier Power Gain f = 81.36 MHz 13 15 dB

h Drain Efficiency VGS = 0V VDD = 65V 70 75 %

y Electrical Ruggedness VSWR 10:1

1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
Pout = 100W

Y
No Degradation in Output Power

R
APT Reserves the right to change, without notice, the specifications and information contained herein.

IN A
30

25
Class C

L
VDD = 150V

I
Pout = 150W M 3000

1000 Ciss

E
CAPACITANCE (pf)

20 500 Coss

R
GAIN (dB)

Crss

P
15

10
NOT UPDATED 100

50

0 10
30 45 60 75 90 105 120 .1 .5 1 5 10 50 150
FREQUENCY (MHz) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

8 60
TJ = -55°C
ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

OPERATION HERE
VDS> ID (ON) x RDS (ON)MAX. LIMITED BY RDS (ON)

6 250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE
1mS

10
4

5
10mS
050-5999 Rev - 7-2001

2
TJ = +125°C TJ = -55°C TC =+25°C
TJ =+150°C 100mS
TJ = +25°C SINGLE PULSE
0 1 DC
2 4 6 8 10 1 5 10 50 100 200
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area
 ARF464A/B
1.2 25

ID, DRAIN CURRENT (AMPERES)

VGS(th), THRESHOLD VOLTAGE
1.1
20
VGS=10 & 15V

1.0
(NORMALIZED)
8V
15
7.5V
0.9
7V
10
0.8 6.5V
6V
5
0.7 5.5V

0.6 0
-50 -25 0 25 50 75 100 125 150 1 5 10 15 20 25 30
TC, CASE TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5, Typical Threshold Voltage vs Temperature Figure 6, Typical Output Characteristics

160 14

GPS, COMMON SOURCE AMPLIFIER GAIN

Class C
VDD = 150V
POUT, POWER OUT (WATTS)

f = 81.36 MHz
120 12 Class C
VDD = 150V
f = 81.36 MHz

80

(dB)
10

R Y
40

IN A 8

M
0 2 4 6 8 10 40 80 0 120 160

I
PIN, POWER IN (WATTS) POUT, POWER OUT (WATTS)
Figure 7, Typical Power Out vs Power In Figure 8, Typical Common Source Amplifier Gain vs Power Out

0.8
D=0.5

E L
R
Z JC, THERMAL IMPEDANCE (°C/W)

0.2

0.1

0.05
P 0.1

0.05

0.02
0.01
Note:
PDM

0.01 t1
SINGLE PULSE
0.005 t2

Duty Factor D = t1/t2

q

Peak TJ = PDM x ZθJC + TC

0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

Table 1 - Typical Class AB Large Signal Input - Output Impedance

Freq. (MHz) Zin (Ω) ZOL (Ω)

2.0 24 - j 5 15.3 - j 0.6

13.5 7.5 - j 11 14.2 - j 3.4
27 2.0 - j 6.2 11.6 - j 5.3
40 0.7 - j 3.1 8.9 - j 5.6
050-5999 Rev - 7-2001

65 0.31 + j 0.52 5.3 - j 4.0

80 0.47 + j 2.1 4.0 - j 2.7
100 0.9 + j 3.8 2.8 - j 0.9

Zin - Gate shunted with 25Ω IDQ = 50mA

ZOL - Conjugate of optimum load for 100 Watts output at Vdd = 65V
 ARF464A/B
L4
+ C1 -- 560pF NPO 50V chip mounted
65V
- at gate lead
C7 C6 C2-C3 -- Arco 424 Mica trimmer
Bias C4-C5 -- Arco 463 Mica trimmer
0 - 12V L3 RF C5-C8 -- 10nF 500V COG chip
C8
Output L1 -- 3t #18 .25" ID .3"L ~48nH
C5 L2 -- 3t #16 AWG .25" ID .35"L ~68nH
R1
L3 -- 10t #18 AWG .25 ID ~470nH
RF L2
L4 -- VK200-4B ferrite choke ~3uH
Input C2 L1 C4 R1-R2 -- 50 Ohm 1/2W Carbon
DUT = ARF464A/B
DUT
R2
C3 C1
81.36 MHz Test Circuit

R Y
IN A
L I M
R E TO-247 Package Outline

P
Top View
4.69 (.185)
5.31 (.209) 15.49 (.610)
1.49 (.059) 16.26 (.640)
2.49 (.098)
5.38 (.212) Dimensions in Millimeters and (Inches)
6.15 (.242) BSC 6.20 (.244) NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
20.80 (.819) specifications. The device pin-outs are the mirror image
Source

21.46 (.845)
of each other to allow ease of use as a push-pull pair.
3.55 (.138)
3.81 (.150)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123)
Device
0.40 (.016) 1.65 (.065)
0.79 (.031) 19.81 (.780) 2.13 (.084) ARF - A ARF - B
20.32 (.800)
1.01 (.040) Gate Drain
1.40 (.055)
Source Source
Drain Gate

2.21 (.087)
2.59 (.102) 5.45 (.215) BSC
050-5999 Rev - 7-2001

2-Plcs.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058