Date:

Topic: The I‒V characteristics of a silicon diode

Aim: To investigate how closely the forward biased characteristics of a real silicon
diode approximate ideal behavior.

Related Theory:

List of Apparatus:

Power supply
Ammeter
Voltmeter
Variable resistor
Silicon diode [1N 4001]
Wires
Switch

Diagram of setup:
Method:

1. Set up apparatus as shown.

2. Set the variable resistor its maximum value. Then set the power supply
voltage to 3 V.

3. Record the potential difference across from the diode and the current
through the diode.

4. Adjust the variable resistor so that the voltmeter value should 0.1V (or
between 0.05 V and 0.1 V ) above the value taken in step 3. Record the
potential difference across from the diode and the current through the
diode.

5. Repeat step 4 for 8 additional trials, each time recording the potential
difference across from the diode and the current through the diode.

6. Plot the graph of current, I, against potential difference, V.

Table of Results:

Potential difference across from Current through the diode,

Trials
the diode, V /V I /A
1
2
3
4
5
.
.
.

10

Graph:

Observation(s):
Discussion:

Conclusion: