J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch

August 2012

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /

MMBFJ112_SB51338 / MMBFJ113
N-Channel Switch
Features
• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.
• Sourced from Process 51.
• Source & Drain are interchangeable.

MMBFJ111
J111 MMBFJ112
J112 MMBFJ112_SB51338
J113 MMBFJ113
G

S
G TO-92 SOT-23 Mark: MMBFJ111 - 6P
S D MMBFJ112 - 6R
D
NOTE: Source & Drain MMBFJ112_SB51338 - 6R
are interchangeable. MMBFJ113 - 6S

Absolute Maximum Ratings* Ta = 25C unless otherwise noted

Symbol Parameter Value Units
VDG Drain-Gate Voltage 35 V
VGS Gate-Source Voltage -35 V
IGF Forward Gate Current 50 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.

Thermal Characteristics Ta = 25C unless otherwise noted

Max.
Symbol Parameter Units
J111-113 *MMBFJ111-113
PD Total Device Dissipation 625 350 mW
Derate above 25C 5.0 2.8 mW/C
RJC Thermal Resistance, Junction to Case 125 C/W
RJA Thermal Resistance, Junction to Ambient 357 556 C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0 1
 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Electrical Characteristics Ta = 25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units

Off Characteristics
BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0A, VDS = 0 -35 V
IGSS Gate Reverse Current VGS = -15V, VDS = 0 -1.0 nA
VGS(off) Gate-Source Cutoff Voltage VDS = 5.0V, ID = 1.0A 111 -3.0 -10 V
112 -1.0 -5.0 V
MMBFJ112_SB51338 -3.0 -5.0 V
113 -0.5 -3.0 V
ID(off) Drain Cutoff Leakage Current VDS = 5.0V, VGS = -10V 1.0 nA
On Characteristics
IDSS Zero-Gate Voltage Drain VDS = 15V, IGS = 0 111 20 mA
Current* 112 5.0 mA
113 2.0 mA
rDS(on) Drain-Source On Resistance VDS  0.1V, VGS = 0 111 30 
112 50 
113 100 
Small Signal Characteristics
Cdg(on) Drain Gate & Source Gate On VDS = 0, VGS = 0, f = 1.0MHz 28 pF
Csg(on) Capacitance
Cdg(off) Drain-Gate Off Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 5.0 pF
Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 5.0 pF
* Pulse Test: Pulse Width  300s, Duty Cycle  3.0%

Typical Performance Characteristics

Common Drain-Source Parameter Interactions

r
- TRANSCONDUCTANCE (mmhos)

10 100 100
DS

T A = 25°C
V GS = 0 V TYP V GS(off) = - 2.0 V
- DRAIN "ON" RESISTANCE (Ω
- DRAIN CURRENT (mA)

- 0.2 V r DS
8
50 50
- 0.4 V
6
- 0.6 V
20 g fs 20
4
- 0.8 V I DSS , g fs @ V DS = 15V,
- 1.0 V 10 V GS = 0 PULSED 10
2 r DS @ 1.0 mA, V GS = 0
D

- 1.4 V - 1.2 V V GS(off) @ V DS = 15V,

I DSS
I

I D = 1.0 nA
fs

0 _5 5
Ω)

_
g

_ _ _
0 0.4 0.8 1.2 1.6 2 0.5 1 2 5 10
VDS - DRAIN-SOURCE VOLTAGE (V) V GS (OFF) - GATE CUTOFF VOLTAGE (V)

© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0 2
 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Typical Performance Characteristics (continued)

Transfer Characteristics Transfer Characteristics

40 16
VGS(off) = - 3.0 V VGS(off) = - 1.6 V V DS = 15 V
- DRAIN CURRENT (mA)

- DRAIN CURRENT (mA)

- 55°C - 55°C
25°C 25°C
30 125°C 12
125°C
VGS(off) = - 2.0 V
125°C
20 25°C 8 VGS(off) = - 1.1 V
- 55°C
125°C
25°C
10 V DS = 15 V 4 - 55°C
D

D
I

I
0 0
0 -1 -2 -3 0 -0.5 -1 -1.5
VGS - GATE-SOURCE VOLTAGE (V) VGS - GATE-SOURCE VOLTAGE (V)

Transfer Characteristics Transfer Characteristics

g fs - TRANSCONDUCTANCE (mmhos)

- TRANSCONDUCTANCE (mmhos)

30 30
VGS(off) = - 3.0 V
- 55°C
V GS(off) = - 1.6 V
25°C
- 55°C
125°C
20 20 25°C
VGS(off) = - 2.0 V 125°C
- 55°C
25°C
125°C VGS(off) = - 1.1 V
10 10 - 55°C
25°C
125°C
V DS = 15 V V DS = 15 V
fs

0 0
g

0 -1 -2 -3 0 -0.5 -1 -1.5
VGS - GATE-SOURCE VOLTAGE (V) VGS - GATE-SOURCE VOLTAGE (V)

On Resistance vs Drain Current Normalized Drain Resistance

r DS - NORMALIZED RESISTANCE ( Ω )
r DS - DRAIN "ON" RESISTANCE (Ω)

100 vs Bias Voltage

125°C V GS(off)
100
TYP = - 2.0V V GS(off) @ 5.0V, 10 μA
50
50 25°C
r DS
125°C V GS(off) 20 r DS = V GS
- 55°C TYP = - 7.0V
1 -________
10 V GS(off)

20 25°C 5
r DS @ V GS = 0

- 55°C 2

10 1
1 2 5 10 20 50 100 0 0.2 0.4 0.6 0.8 1
ID - DRAIN CURRENT (mA) VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)

© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0 3
 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Typical Performance Characteristics (continued)

Transconductance Output Conductance

- OUTPUT CONDUCTANCE ( μ mhos)

vs Drain Current vs Drain Current
g fs - TRANSCONDUCTANCE (mmhos)

100 100
TA = 25°C
T A = 25°C V DG = 5.0V
5.0V
V DG = 15V
f = 1.0 kHz 10V 5.0V
15V
20V 10V
f = 1.0 kHz
10 V GS(off) = - 5.0V
15V 10V
15V
20V
20V

10 V GS(off) = - 1.4V

1 V GS(off) = - 2.0V
V GS(off) = - 3.0V

V GS(off) = - 0.85V

1 0.1
0.01 0.1 10

os
0.1 1 10

g
I D - DRAIN CURRENT (mA) I D - DRAIN CURRENT (mA)

Capacitance vs Voltage Noise Voltage vs Frequency

100 100
V DG = 15V
e n - NOISE VOLTAGE (nV / Hz)
C is (C rs ) - CAPACITANCE (pF)

50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz

√

= 0.21 @ f ≥ 1.0 kHz

f = 0.1 - 1.0 MHz

10 10
C is (V DS = 0)

5 I D = 1.0 mA
C is (V DS = 20)
I D = 10 mA
C rs (V DS = 0)

1 1
0 -4 -8 -12 -16 -20 0.01 1 10 100
V GS - GATE-SOURCE VOLTAGE (V) f - FREQUENCY (kHz)

Noise Voltage vs Current Power Dissipation vs

100
Ambient Temperature
e n - NOISE VOLTAGE (nV / √ Hz)

V DG = 15V
700
P D - POWER DISSIPATION (mW)

600
f = 10 Hz TO-92
f = 100 Hz 500
f = 1.0 kHz
10 400 SOT-23

300

200
f = 10 kHz
f = 100 kHz 100
1 0
0.01 0.1 1 10 0 25 50 75 100 125 150
I D - DRAIN CURRENT (mA) TEMPERATURE ( o C)

© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0 4
 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Typical Performance Characteristics (continued)

Switching Turn-On Time Switching Turn-Off Time

vs Gate-Source Voltage vs Drain Current

t d(OFF) ,t OFF - TURN-OFF TIME (ns)

t r(ON) ,t d(ON)- TURN-ON TIME (ns)

25 100
V DD = 3.0V T A = 25°C
t r (ON) VGS(off)= -2.2V
t r APPROX. I D INDEPENDENT V DD = 3.0V
20 80
VGS(off) = 3.0V V GS = -12V
- 4.0V
t (off)
15 T A = 25°C 60 - 7.5V t d(off) DEVICE

I D = 6.6 mA V GS(off) INDEPENDENT

10 2.5 mA
40
t d (ON) V GS = -12V
- 6.0V
5 20 t d(off)

0 0
0 -2 -4 -6 -8 -10 0 2 4 6 8 10
V GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V) I D - DRAIN CURRENT (mA)

© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0 5
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