Current Gain with Resistive Load

Consider a single stage CE transistor amplifier

with load resistance RL, as shown in the Fig.

Included

Hybrid – π model for a single transistor with resistive load R L

In the output circuit r0 is in parallel with RL. For high
frequency amplifiers RL (2k) is small as compared to ro (80
k) and hence we can neglect r0. Using Miller's theorem, we
can split rµ, and Cµ to simplify the analysis.

Fig. shows the simplified hybrid –π model for a

single transistor with resistive load.

Simplified Hybrid – π model for a single transistor with RL

CMin rMin rMout CMout

Vin  V
Further simplification of input circuit:
Vin  V

Further simplification of input circuit

For example, from Table, g m  50 mA / V , RL  2 K
 AV   g m RL   50 mA / V  x (2 K)  100
r 4 M
rMin    40 K
1  AV 1  (100)
r
 The value of (40 K ) is  r (1 K ) and it is neglected
1  AV
CMin
As Cπ and CM(in) are in parallel, the total
||| , C M ( in )  C  (1  g m RL )
ly
equivalent capacitance as
C eq  C  C  (1  g m RL )
Ceq  C  C  (1  g m RL )

From above equation, we can say that input capacitance is

increased by the term Cµ(1+gmRL) due to Miller capacitance
(CM(in)). With these approximations input circuit becomes as shown
in Fig.
 Further simplification for output circuit
At output circuit value of Cµ can be calculated as

AV
C M ( out )  C   C  AV  100
1  AV
But , C (3 pF )  C (100 pF ), so it can be neglected
AV
Similarly , rM ( out )  r  r With these approximations output
1  AV circuit becomes as shown in Fig.

 AV  100
  100 
  4M     4 M
 1.(100) 
This value of rµ is very high in
comparison with load resistance
RL which is parallel with rµ.
Hence rµ can be ignored.
Fig. shows the further simplified hybrid - π model of
single transistor in CE configuration with load
resistance.
Analysis

Parallel combination of rµ and Ceq is given as,

Z  r || C eq
1 1
r  r 
jCeq jC eq
 
1 1  jr Ceq
r 
jCeq jC eq

r jCeq r
  
jC eq 1  jr C eq 1  jr C eq
 r
Z
1  jr Ceq

This gives equivalent circuit as shown in Fig below

The current gain for the circuit

shown in above Fig. can be given
Looking at Fig. above we can write, as,
IL Here , I L   g mV
V  I b  Z Ai 
Ib
V
Z  IL g mV V
Ib  Ai     g m Z Z 
Ib Ib Ib
 r
Z
Substituting value of Z 1  j r Ceq

Ai   g m Z 1 1
Let , f H   2 r C eq 
  gm 
r 2 r C eq fH
1  j r Ceq
h fe
g m r Ai  
 1 j 2 f r Ceq
1  jr C eq   2 f
h fe
h fe 
Ai   h fe  g m r f
1  j r Ceq 1 j
fH
At f = fH h fe
Ai 
2
h fe h fe h fe  f 
Ai   Ai   1   
 f 
2
11 2  fH 
1   H 
 fH 
 The fH is the frequency at which the transistor's gain
drops by 3 dB or 1 /√2 times from its value at low
frequency. It is given as,
1 From equation we can say that
fH 
2 r Ceq maximum possible value for fH is
But, fβ.

Ceq  C  C (1  g m RL ) As RL increases Ceq increases

1 decreasing fH, as shown in Fig.
fH 
2 r (C  C  (1  g m RL )
At RL = 0

1
fH   f
2 r (C  C  )
 ,
,

Typical values are:

0.629 MHz 1k

0.395 MHz 5k
1.54MHz
The circuit in Figure is a hybrid- equivalent circuit including the resistance rb. (a)
Derive the expression for the voltage gain transfer function A v(s) = Vo(s)/Vi(s). (b) If
the transistor is biased at ICQ = 1 mA, and if RL = 4 k and β = 100, determine the
mid-band voltage gain for (i) r b = 100 and (ii) rb = 500 . (c) For C1 = 2.2 pF,
determine the −3 dB frequency for (i) rb = 100 and (ii) rb = 500 .

Assume s  j 
  VT I CQ
r  gm 
I CQ VT

1 1
f 3dB  

2 1 2  2.2  10 10 s 
1 1
f 3 dB  

2 1 2  9.23  10 10 s 
 High-frequency hybrid- model
with Miller effect for CE amplifier
RS
vo

vs R1|| C CMi r ro RC||

CMo
R2 gmV
 RL


 R1 R2 r 
A  gm  
 r R R  56.36
 RS  R1 R2 r  o C L
  midband gain
 

C Mi  Cbc 1  A   2.4 p  57.36  137.66 pF  Miller’s equivalent

capacitor at the input

 1
C Mo  Cbc 1     2.4 p 1.018  2.44 pF  Miller’s equivalent

 A capacitor at the output

 Ri  RS R1 R2 r 600 22k 4.7k 1.55k  389.47  Thevenin’s equivalent
resistance at the input

Ro  RC RL ro  2.2k 2.2k 47.62k  1.08k  Thevenin’s equivalent

resistance at the output

Cin  Cbe  CMi  20 p  137.66 p  157.66 pF  total input capacitance

Cout  CMo  2.44 pF  total output capacitance

1 1
f Hi    2.59MHz  upper cutoff frequency
2Ri Cin 2  389.47 157.66 p  introduced by input
capacitance
1 1
f Ho    60.39MHz  upper cutoff frequency
2RoCout 2 1.08k  2.44 p  introduced by output
capacitance
How to determine the dominant frequency
 The lowest of the two values of upper cutoff
frequencies is the dominant frequency.
 Therefore, the upper cutoff frequency of this
amplifier is

f H  2.59 MHz
TOTAL AMPLIFIER FREQUENCY
RESPONSE

A (dB)
ideal
Amid
-3dB actual

f
fC fC fC fC fC
(Hz)
1 2
fL 3 4 f 5

H
Total Frequency Response of CE Amplifier
Given :
VCC =
 = 120, Cbe = 2.2 pF, Cbc = 1 pF, 5V
VA = 100V, VBE(on) = 0.7V
R1 RC vO
33 C2
k 4
RS C1 k 2
F RL
2 1
5
vS k  F
R2
RE C3 k
22 10
k 4
k F
Determine :
i-lower and upper cutoff frequencies
ii- midband gain
Q-point values
VBB  VBE (on)
IB   2.615A
RB     1 RE

R2
VBB   VCC  2 V
R1  R2
R1  R2
RB   13.2 k
R1  R2

I CQ  I B  0.314 mA
Transistor parameters value
VT
r   9.94 k
I CQ

VA
ro   318.47 k
I CQ

I CQ
gm   12.08 mS
VT
Midband gain
Amid   g m
R
B r 
 r RC RL 
R
S  RB r  
o

 r RB   9.94k 13.2k  5.67 k

RS   r RB   2k  9.94k 13.2k  7.67k

r
o 
RC RL  318.47k 2.22k  2.18k

Amid  12.08m
 5.67 k 
 2.18k   19.47
 7.67k 
 Lower cutoff frequency
1
Due to C1 1   130.38 rad / s R1S  RS  RB r  7.67 k
R1S C1
1 R2 S  RL  RC ro  8.95 k
Due to C2 2   55.87 rad / s
R2 S C2
1 R3 S  RE
 r  R
S RB 
 94.26 
Due to C3 3   1060.9 rad / s  1
R3 S C3

3
SCTC
method  L   1 2  3  1247.15 rad / s
i 1

L
Lower cutoff frequency fL   198.49 Hz
2
Upper cutoff frequency
Miller Capacitance

CMi  Cbc 1  A  1 p  20.47   20.47 pF

 1
C Mo  Cbc 1    1 p 1.051  1.05 pF
 A
Cin  Cbe  CMi  22.67 pF Cout  CMo  1.05 pF

Input & output resistances

Ri  RS R1 R2 r  1.48 k
Ro  RC RL ro  2.18 k
 1 1
Input side f Hi    4.74MHz
2Ri Cin 2 1.48 k  22.67 p 

1 1
Output side f Ho    69.53MHz
2RoCout 2  2.18k 1.05 p 

Upper cutoff frequency

(the smallest value) f H  4.74 MHz
Announcement
 Tutorial 1 (next Monday) for 1st 1 hour
then continued with 1 hour lab.
 Test 1 will be held on 1st March
2007(Thursday). Time 8.30 pm – 9.30pm
at DKG4&5.