(12)

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3 (a) Given VA = 6.7V, VB = 1V. If S is closed, find I1 and I2. 3(a) 6.7V
Assume D1 and D2 are offset diodes with VF = 0.7V. (12) 6mA
1kΩ
1kΩ
0
0.7V 1V
D1
S
6mA
D2

VA
1kΩ I2
1kΩ I1 = 6mA

VB
I1 (12)
D1 I2 = 0mA
S
D2
 (12)
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3
3. (b) In the ideal op amp circuit, the diode equation is
VD
−13
I D = 10 A *[e 25mV
− 1] 3(b)
∴ V3 = 0.6V
Find I if V2 = V1 + 0.6V. (12)
0.6V
∴ I = −I O (e 25mV
− 1)
600m
1kΩ - V3 + = −10 −13
A * (e 25m
− 1) ≅ − 2.65mA
1V I

V2
V1
(12)

1kΩ - 0.6V +
1V 2.65mA

V2
V1
 (19)
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In the ideal diode circuit, sketch Vo(t) .

4
(a) If X = C.
(b)
VO (t)
(b) If X = R . (19)
14V
Vi (t)
VO (t) 0 D
14V X -9V
Vi (t) -12V
0 D
-9V
-12V

14V
VO
(a) -12 -9 0V
- 3+
VO -9V
-12 VO
D 14
D
-9V
0 -9V

(8)

17V
VO
VO = Vi + Vc = Vi + 3V
3V
-9V

(11)
 (17)
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5 In the ideal op amp circuit, the diode has the (a) Model at breakdown
reverse characteristics as shown.
(a) Find the model of the diode at breakdown.
(b) If V1 = 10V, find V3 and I2.
(c) If V1 = 25V, find V3 .
(31) VZO = 10V
(7)
rZ = 5Ω
V1

2kΩ I1 4kΩ
6kΩ V1 = 10V diode is not breakdown
V2
(b)
and is an off diode (open)
I2 15V
V3 6kΩ (6)
∴ V3 = − 10V = −10V
4kΩ + 2kΩ
-15V

∴ I 2 = 0.1x10 −12 A (4)

ID
− 10V 0V VD 10V
1.67m 1.67m
I O = 0.1x10 −12 A 2kΩ 1.67m 4kΩ
6kΩ
6.67V
− 1A
Io 0V 15V
-10V

-15V
− 2A
 (14)
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V1= 25V Zener is breakdown

25 − V 2 V 2 − 10 V 2
∴ ≅ +
2kΩ 5Ω 4kΩ
2(25 − V 2) ≅ 800(V 2 − 10) + V 2
8000 + 50 (10)
∴ V2 ≅ ≅ 10.02V
803

6k
∴ V3 = − *10.02 = −15V (4)
4k
25V
7.5m 2.5m
2kΩ 2.5m 4kΩ
6kΩ
10.02V
0V 15V
5m -15V

-15V
 (16)
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6 1. EB Junction is a forward bias (on) diode

and BC is reverse bias (off) diode
Draw the cross sectional structure of a NPN BJT transistor
operated in the amplifier mode, describe the movement of
2. E is very heavily doped (N + for NPN). E
electrons, and explain briefly the equation IC / α ≅ IE .
If IC ≅ βIB, find β in terms of α. (16) has many electrons,

3. B is very thin. So most electrons

injected from E (to B) are attracted to C and
(a)
← IE ← IC
E B C
e- N+ P N N+ e IC ≅ αI E (10)
e
VBE IB VCB
IC I
IE ≅ = IB + IC = C + IC
α β
1 1
hence = + 1
α β
β
α=
β +1
α
β= (6)
1− α
 (16)
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7
Sketch the small signal (AC) equivalent circuit of the BJT
amplifier and find the voltage gain Av ( = Vout / Vin ).
Given rπ = 0Ω, β = 100 , and VCESAT = 0.2V , VBE(ON) βiB
= 0.7V . (16)

iB
RC = 1kΩ
10V
Vin
IC RB = 1kΩ
1kΩ B
2kΩ vout
Vout + rπ C
Vin/2 β iB
2kΩ E
-
0V
(8)

10V
Vin /2
IC vOUT − β iBRC
1kΩ ∴ Av = =
1kΩ vin 2i B (R B + rπ )
Vout
− βR C − (100)(1kΩ )
= = ≅ −50 (8)
2R B + 2rπ 2kΩ
 (24)
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8 Find IC / IB . Show clearly your reasons.

For the BJT, given VBE(ON) = 0.7V, β = 100, VCESAT = 0.2V. (24)
∴ BJT is in saturation
10V
8V VB − VBE VCC − VCESAT
1kΩ ∴ IB = =
IC 2kΩ
R B + (1 + β *)R E β *R C + (1 + β * ) R E
8V − 0.7 V 10V − 0.2V
∴ IB = =
1kΩ + (1 + β *)1kΩ 1kΩ(1 + 2β *)
2kΩ
1kΩ IB ∴ 7.3V (1 + 2β * ) = 9.8V (2 + β * )
8V ∴ 7.3V + 14.6β * = 19.6V + 9.8β *
19.6V − 7.3V
∴β* = = 2.5625 (24)
10V
14.6 − 9.8
8V
IC
1kΩ 1kΩ
10V
8V
4.1m
IB 1kΩ 1kΩ
1kΩ
5.9V
1.6m
5.7V
10V − 0.2V 1 6.4V
IB ≅ * = 0.049mA when VCE = 0.2V 1kΩ
5.7m
1kΩ + 1kΩ β
8V − 0.7V 8V − 0.7V
But I B ≅ ≅ 0.072mA IB =
(2.5625 + 1) * 1kΩ + 1kΩ
= 1.6mA
β * 1kΩ + 1kΩ
(ELEC101)[200X](f)final~2680^_10265.pdf downloaded by hfwong from http://petergao.net/ustpastpaper/ at 2013-03-10 06:18:27. Academic use within HKUST only.

9
Given the BJT circuit below and the IC -VCE curve of the BJT. VCEQ = 5V. (a) Draw the
load line VCE = V1 – ICR1 , and locate the Q point on the load line. Find also R1

(b) Estimate the voltage gain ∆VO / ∆Vi from the IC -VCE curves and sketch
VO(t) .
(30)
For the BJT, given VBE(ON) = 0.7V , VCESAT = 0.2V .

+ VCE -
20
R1 VO(t)
IB = 0.16mA V1 = 9V
IC (mA ) 0V
IC
10
IB = 0.08mA 1kΩ
0.01V
0
VCE ( V ) -0.01V
0 Vi = 0.78V
5 10
 (30)
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Draw load line,

(a)
0.78V − 0.7V
∴I B = = 0.08mA (5)
1kΩ
VCC 9V
∴ R1 = = = 500Ω (5)
I C 18mA
IC (mA )
20
Vin1 = 0.80V
IC1 = 10mA IB1= 0.10mA
10
dVCE VCE 2 − VCE1
IC2 = 6mA Vin2 = 0.76V voltage gain A v = =
dVin Vin 2 − Vin1
IB2 = 0.06mA
6V − 4V
0 VCE ( V ) ≅ = −50
5 10 0.76V − 0.8V
VCE1 = 4V
(8)
VCE2 = 6V

6
(8)
5 (4)
VO (t) V
4
 (15)
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(b)
10 D : drain
Oxide layer VD B : Body
(a) Name two advantages of MOSFET. (b) Draw the cross (insulator) ID
sectional diagram for an enhancement NMOSFET and describe (or substrate)
very briefly the structure. n+
(15)
VG I
G
G : Gate p source
n+ usually
Metallic film shorted
to body
IS VS
(a) IG = 0
S : source
ID = IS
small size (scaled down easily)
and low power consumption. (4)
An NMOSFET consists of a metal gate insulated
from a p-type semiconductor substrate (or
body) by an insulating layer of silicon dioxide.
On either side of the gate there are n type regions
forming the drain and source.

(11)
 (22)
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11
∴I D = K (VGS − VT )2
6V I = 1 (6 − Vo − 2)2 = 1 (Vo − 2)2 + 1 (Vo − 2)2 (7)
Find Vo .
I
(4 − Vo)2 = 2(Vo − 2)2
Given the NMOS are
all identical, VT = 2V Vo 16 − 8Vo + Vo2 = 2Vo2 − 8Vo + 8
K = 1mA/V2 . Vo2 − 8 = 0
Vo = 8V ≅ 2.83V (9)

I = 1 (6 − Vo − 2)2 = 1 (6 − 2.83 − 2)2 ≅ 1.37mA

Since VDS = VGS Since VGS > VT
I = 1 (Vo − 2)2 = 1 (2.83 − 2)2 ≅ 0.689mA
Hence VDS > VGS - VT 6V
1.37mA
If VGS < VT for any 1 MOS (MOS off)
the other MOS will be saturated 2.83V
Which is not possible
0.69mA

Hence only possibility is all 3 NMOS are (6)

in saturation 11. Find Vo . Show clearly the reasons for your answers. (22)
Given that the three NMOS are identical and VT = 2V , K = 1 mA/V2 .
At triode region , VGS ≥ VT , VDS < VGS - VT , ID = 2K(VGS –VT)VDS – KVDS2
At saturation region , VGS ≥ VT , VDS ≥ VGS - VT , ID = K[(VGS –VT)2 ]
 (15)
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12
11V − 2V
∴RD = = 3kΩ
Find K and RD. 3mA (4)

Given VT = 1V .

VGS = 5V, VDS = 2V , MOS is Triode.

VDD = 11V
Since VDS < VGS - VT VGS > VT (3)
RD 3mA
VD2
VD ∴ I D = 2K[(VGS − VT )VD − ]
5V 2V 2
VS
4V 2
3mA = 2K[(5V − 1V )2V − ] = 2K[6V 2 ]
2
∴ K = 0.25mA / V 2 (8)

4V 2
3mA = 2 * 0.25[(5V − 1V )2V − ] = 2 * 0.25[6V 2 ]
2

Find K and RD . Show clearly the reasons for your answers. (15)
Given that VT = 1V .
At triode region, VGS ≥ VT , VDS < VGS - VT , ID = 2K(VGS –VT)VDS – KVDS2
At saturation region, VGS ≥ VT , VDS ≥ VGS - VT , ID = K [(VGS –VT)2 ]