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i Learn

1. Fermi level of metal semiconductor junction ranges

0.20–0.70 eV 0.35–0.95 eV 0.30–0.90 eV 0.25–0.75 eV

Ans: 3

2. A junction of metal and lightly doped silicon is called as

Tunnel diode PN Junction diode Zener diode Schottky diode

Ans: 4

3. Types of metal semiconductor contacts (MCA)

PN junction contact Ohmic contact Avananche contact Zener contact

Rectifying contact

Ans: 2 5

4. Which of the below mentioned statements is false regarding Schottky diodes?

Schottky diodes have a Al-Silicon junction There is no storage of charges in a
Schottky diode The majority charge carriers in a Schottky diode are holes
Schottky diodes can be switched off faster than a p-n junction diode of the
same rating

View Answer
Answer: c

5. To make a good ohmic contact to a semiconductor, what should be done?

Choose a metal with a high Schottky barrier height. Use a lightly doped
semiconductor. Introduce defects into the semiconductor to lower its lifetime.
Dope the semiconductor very heavily. Reduce the contact area.

Ans: d

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i Explore

1. What are the consequences of Fermi level pinning?

The Schottky barrier height will be insensitive to the type of metal. The SB will
behave like a PN junction. The SB will be ohmic – not rectifying. The
thermionic emission theory will have to be replaced by drift-‐diffusion theory.
The ideality factor of the SB will decrease.

Ans: a

2. In order to reduce the reverse recovery time of the diodes, _______________ is

carried out.
antimony doping adding ans extra silicon layer platinum & gold dopping
shortening of the length of the device
Ans:3

3. Select the junction layers of Schottky diode

Aluminum Platinum Germanium Arsenide Solicon

Ans: 1 5

4. The materials having a nonlinear voltage-current relationship are

ohmic non-ohmic batteries capacitors

Ans:2

5. Over a large range of applied voltages, ohmic conductor have a

linear voltage current relationship vibratory voltage current relationship

circular voltage current relationship random voltage current relationship

Ans: A

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i Analyse

1. Assume an arbitary metal forms a Schottky contact with an n-type semiconductor.

How does the Schottky barrier height vary if the doping in the semiconductor
decreases?
remains unchange increases decreases becomes zero

Ans: 1
2. An arbitrary metal is deposited on a lightly doped n-type semiconductor. Work-
function of the metal is much higher than the work-function of the semiconductor.

Q1 Identify the type of junction

PN Junction PIN Junction Metal-Semoconductor Junction PN+ Junction

Ans: 1

Q2 Which of the following steps will make the metal-semiconductor junction into an
ohmic contact?

Doping the semiconductor heavily with a p-type impurity far away from the contact
Doping the semiconductor lightly with a p-type impurity near the contact to
make the semiconductor an intrinsic Doping the semiconductor heavily with an n-type
impurity near the contact region No further processing is required, as it is
already an ohmic contact

Ans: 3

Q3 Which of the following steps will make the metal-semiconductor junction into
rectifying contact?

Doping the semiconductor heavily with a p-type impurity far away from the contact
Doping the semiconductor lightly with a p-type impurity near the contact to
make the semiconductor an intrinsic No further processing is required, as it is
already an ohmic contact Doping the semiconductor heavily with an n-type
impurity near the contact region

Ans: 4

3. Which of the following is not correct regarding an M-S junction?

Thermionic emission depends on the shape of the band bending inside the
semiconductor near the junction. Tunneling current through a triangular barrier
at the junction increases with the doping concentration in the semiconductor.
Diffusion transport through a junction is negligible in case of reverse bias.
Thermionic emission transport enhances with the increase in temperature.

Ans: 1

4. The threshold voltage cannot be determined using

concentration density channel thickness implanted impurity channel depth

View Answer
Answer: d

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i Design

1. Dinesh has not read the MESFET basics and help him to ans the below questions
Q1 Which MOSFET contains Schottky diode?
GaAs Ga Si SiO2

View Answer
Answer: a

Q2. Which is ON device?

e type MESFET d type MESFET depletion enhancement

View Answer
Answer: b

Q3 In MESFET for gate _____ junction is used.

pnp junction npn junction schottky junction n junction

View Answer
Answer: c

2. Ragul wants to learn the MESFET basics, help him to answering the below question
for better understanding

Q1 Which region is heavily doped?

Drain Gate Source Substrate

Ans: Drain
Q2 Threshold voltage cannot be determined using

concentration density channel thickness implanted impurity channel depth

Ans : channel depth

Q3 Schottky barrier is created due to the difference in

voltage thickness work function density

Ans: workfunction

Q4 In MESFET gate type of the junction is

PNP junction NPN junction Schottky junction N Junction P Junction

Ans: Schottky junction

3. Answer the below questions for the MESFET

Q1 Which id ON device normally?

Depletion mode Enhancement mode E type MESFET D type MESFET

Ans: D type MESFET

Q2 MESFET is constructed in (MCA)

Ans: SiC InP GaAs

Q3 Doping level of the drain is

Normaly doped Slightly doped Heavily doped No doping

Ans : Heavy

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i Assess

1. Concentrate the on the construction of a electronic device answer the following

questions

Q1 Identify the device

JFET MOSFET MESFET PINFET

Q2 Identify the Layer

P Type N Type Metal P+ Type N+ Type

Q3 Identify the type of junction

PN Junction P+N Junction PN+ Junction Metal-Semiconductor junction

Q4 In the above device if doping level is increases the value of threshold voltage
is

larger negative larger positive smaller negative smaller positive

Ans: larger negative

2. Georg wants to analyse the MESFET construction, fabrication and its working help
him to analyse

Q1 Schottky barrier is created due to the difference in

Voltages Thickness Work function Density

View Answer
Answer: c

Q2 4. As the separation between metal-semiconductor surface is reduced, induction

charge
Increases Decreases Remains constant Is not affected

View Answer
Answer: a

Q3 Method used for fabrication of GaAs MESFET is

Disposition Ion implantation Diffusion Conduction

Ans:B

Q4 How many masking stages does fabrication GaAs FET require?

8
4
10
6

Ans: 8

Q5 In MESFET, if gap between metal-semiconductor surface is reduced what happen to

the induction charge

increases decreases remains constant not changed

Ans: Increses

3. Symbol Identification