A

N Friis transmission equation

T
E
N
N
A

T
H
E
O
R
Y Where  is the operating wavelength
& R is the distance between the two antennas
D Pt is the time average input power of the transmitting antenna
E Pr is the time average output power of the receiving antenna
S t, r :Reflection coefficient at the input of the transmitting
I antenna and the output of the receiving antenna
G Gt, Gr :gain of the transmitting antenna and the receiving antenna
2
N ^ ^

pt pr polarization matching factor [PLF] between the transmitting and

receiving antennas
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N
T
E
N
N
A

T
H
The Friis Transmission Equation relates the power received to the
E
O power transmitted between the two antennas, as given in equation
R
Pr  
  
2
  
^ ^ 2
Y
 1  t   1  r   Gt  Gr   p   p   
2 2

Pt  
&
D
t r  4R 
E For reflection and polarization-matched antennas aligned for maximum directional
S
radiation and reception, equation reduces to:
I
Pr     
2
G
 Gt  Gr   
N Pt    4R 
A
N
T
E
N
N MICROSTRIP ANTENNAS
A

T
H
E
O
R
Y
&
D
E
S Lecture # 7- 9
I
G Dr Sanjeev Kumar Mishra
N
A
N Outlines
T
E • Comparison : All Waveguides
N
• Introduction: MSA
N
A • Feeding Technique

T • Fringing Effect
H
• RMPA
E
O • Transmission-line Model
R
Y • Cavity Model
&
D • CMPA
E
S
I
G
N
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D Note: TEM waves are non-dispersive, with no cut off frequency, while TM and TE waves
E exhibit dispersion and generally have nonzero cut off frequencies.
S Other electrical considerations include bandwidth, attenuation, and power-handling capacity.
I Mechanical factors are also very important, however, and include such considerations as
G
physical size (volume and weight), ease of fabrication (cost), and the ability to be integrated
N
with other devices (active or passive).
A
N Other Types of Lines and Guides
T
E Ridge waveguide:
N • The practical bandwidth of rectangular
N
waveguide is slightly less than an octave.
A
This is because the TE20 mode begins to
T propagate at a frequency equal to twice the
H
E cutoff frequency of the TE10 mode.
Cross section of a ridge waveguide
O
• The ridge waveguide, shown in Figure, consists of a rectangular waveguide
R
Y loaded with conducting ridges on the top and/or bottom walls. This loading
& tends to lower the cutoff frequency of the dominant mode, leading to increased
D
bandwidth and better (more constant) impedance characteristics.
E
S • Ridge waveguides are often used for impedance matching purposes, where the
I ridge may be tapered along the length of the guide.
G
• The presence of the ridge, however, reduces the power-handling capacity of the
N
waveguide.
A
N
T
E Dielectric waveguide:
N • The dielectric waveguide shown in
N
Figure is another example of such
A
a guide, where r2,the dielectric
T constant of the ridge, is usually
H
E greater than r1, the dielectric
O constant of the substrate.
R
Y Dielectric-waveguide Geometry
& • The fields are thus mostly confined to the ridge and the surrounding area.
D
• This type of guide supports TM and TE modes, and is convenient for
E
S miniaturization and integration with active devices.
I • Its small size makes it useful for millimeter wave to optical frequencies, although
G
it can be very lossy at bends or junctions in the ridge line.
N
• Many variations in this basic geometry are possible.
A
N
T
E Slot Line:
N
N
A

T
H
E
O Geometry of printed slot line
R
Y • Slot line is another one of the many possible types of planar transmission
& lines.
D • It consists of a thin slot in the ground plane on one side of a dielectric
E
S substrate.
I • Thus, like microstrip line, the two conductors of slot line lead to a quasi-TEM
G type of mode.
N
• The width of the slot controls the characteristic impedance of the line..
A
N
T
E Coplanar Waveguide:
N
N
A

T
H
E Coplanar Waveguide Geometry
O • The coplanar waveguide, shown in Figure, is similar to the slotline, and can be
R
Y viewed as a slotline with a third conductor centered in the slot region.
& • The presence of this additional conductor, this type of line can support even or
D
odd quasi-TEM modes, depending on whether the electric fields in the two slots
E
S are in the opposite direction or the same direction.
I • Coplanar waveguides are particularly useful for fabricating active circuitry due to
G
the presence of the center conductor and the close proximity of the ground
N
planes.
A
N
T
E Covered Microstrip:
N
N
A

T
H Covered Microstrip Line
E
O • Many variations of the basic microstrip line geometry are possible, but one of
R
Y the more common is the covered microstrip, shown in Figure.
& • The metallic cover plate is often used for electrical shielding and physical
D
protection of the microstrip circuitry and is usually situated several substrate
E
S thicknesses away from the circuit.
I • Its presence, however, can perturb the operation of the circuit enough so that its
G
effect must be taken into account during design.
N
A
N
T
E
N Electrical breakdown or dielectric breakdown is a rapid reduction in the
N resistance of an electrical insulator when the voltage applied across it exceeds
A the breakdown voltage.

T This results in a portion of the insulator becoming electrically conductive.

H Electrical breakdown may be a momentary event (as in an electrostatic
E discharge), or may lead to a continuous arc discharge if protective devices fail
O
R to interrupt the current in a high power circuit.
Y
&
D
E
S
I
G
N
A
N Power handling Capacity:
T
E • The power-handling capacity of an air-filled transmission line or waveguide is
N usually limited by voltage breakdown, which occurs at a field strength of about
N
Ed = 3 × 106 V/m for room temperature air at sea level pressure.
A
• Thermal effects may also serve to limit the power capacity of some types of
T lines.
H
E • In an air-filled coaxial line the electric field varies as Eρ = V0/(ρ ln b/a), which
O has a maximum at ρ = a (at the inner conductor).
R • Thus the maximum voltage and power before breakdown is:
Y 2
b Vmax
& Vmax  Ed a ln  Pmax 
D a 2Z 0
E
a 2 Ed 2 b  a 
 Pmax 
2 2
S ln ln b 0.025  cEd   E 
 Pmax     5.8 1012  d 
0  Z0  0
I a 2 r 0  f max   f max 
G
N • As an example, at 10 GHz the maximum peak power capacity of any coaxial line
with no higher order modes is about 520 kW.
A
N
T
E • In an air-filled rectangular waveguide, the electric field varies as Ey = E0 sin(π
N
x/a), which has a maximum value of E0 at x = a/2 (the middle of the guide).
N
A • Thus the maximum power capacity before breakdown is
2 2
abE0 abEd
T Pmax  
4Z w 4Z w
H
E where fmax is the maximum operating frequency
O
• Power capacity increases with guide size
R
Y • A the maximum power capacity of the guide can be shown to be
& 2 2
D 0.11  cEd   E 
Pmax     2.6 1013  d 
E 0  f max   f max 
S
I • Example: At 10 GHz the maximum peak power capacity of a rectangular
G waveguide operating in the TE10 mode is about 2.3 MW, which is considerably
N
higher than the power capacity of a coaxial cable at same frequency.
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N
T
1. any suitable HPM source
E
N 2.evacuated rectangular waveguide with dominant mode propagation
N
3. magnetic wall coupler (60 to 80 dB)
A
4. evacuated waveguide run to the feed horn
T
5. standard vaccum flanges
H
E 6. evacuated feed horn (e.g., pyramidal) with rounded metallic edges
O
7. vacuum to SF6 dielectric interface with suitable metal slats
R
Y 8. Gas bag to transition from SF6 to air outside that may contain parts
&
of the reflectors in it.
D
Electrical breakdown or dielectric breakdown is a rapid reduction in the
E
resistance of an electrical insulator when the voltage applied across it exceeds
S the breakdown voltage.
I This results in a portion of the insulator becoming electrically conductive.
G Electrical breakdown may be a momentary event (as in an electrostatic
N discharge), or may lead to a continuous arc discharge if protective devices fail
to interrupt the current in a high power circuit.
A
N Microstrip Patch Antenna
T
E A metallic patch or strip mounted on a dielectric layer (substrate) which
N is supported by a ground plane.
N
t  0
A
0.0030  h  0.050
T
H 0 / 3  L  0 / 2
E 2.2   r  12
O
R
Y
&
D
E
S
I
G
N
A
N Microstrip Patch Antenna
T
E A metallic patch or strip mounted on a dielectric layer (substrate) which
N is supported by a ground plane.
N
A
• Microstrip antennas: invented in 1953
T • Patent filed in 1955.
H
• Received attention starting in the 1970s
E
O • Its pattern maximum is normal to the patch (broadside radiator).
R
• This is accomplished by properly choosing the mode (field
Y
& configuration) of excitation beneath the patch.
D
• End-fire radiation can also be accomplished by judicious mode
E
S selection.
I
G
N
A
N Basic Characteristics
T
E t  0  0.010
N
N 0.0030  h  0.050
A 0 / 3  L  0 / 2
T 2.2   r  12
H W  0
E
O
R
Y
&
D
E
S
I
G
N
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I Patches of various shapes
G
N
A
N Advantages
T
E
• Low weight, low volume and thin profile configurations which can be
N
N made conformal.
A
• Low fabrication cost, readily available to mass production.
T • Easily integrated with microwave integrated circuits (MMICs).
H
• Capable of dual and triple frequency operations.
E
O • Feed lines and matching network can be fabricated simultaneously.
R
• Mechanically robust
Y
& • Very versatile
D
• Resonant frequency
E
S • Impedance bandwidth
I
• Pattern
G
N • Polarization (linear and circular are possible)
A
N
T
E • Popularly used
N
• High performance aircraft
N
A • Spacecraft satellite

T • Missile applications
H
• Mobile radio and wireless communication
E
O • Biomedical applications.
R
Y
&
D
E
S
I
G
N
A
N Disadvantages- - Challenges
T
E • Low efficiency, Lower gain ( somewhat → 6dB)
N
• Narrow bandwidth
N
A • Large ohmic loss in the feed structure of arrays.
• Poor end fire radiator except tapered slot antennas,
T
H • Extraneous [spurious] radiation from feeds and junctions.
E
• Low power handling capacity (approx 100W).
O
R • High Q
Y
• Excitation of surface waves.
&
D • Polarization purity is difficult to achieve.
E
• High levels of cross polarization and mutual coupling at high
S
I frequencies. [in microstrip array antenna]
G
N
A
N Feeding Methods
T
E
N There are many new methods of feed techniques. The most popular
N
or commonly used techniques are
A
1. Micro-strip line
T
2. Coaxial probe
H
E 3. Aperture coupling
O
4. Proximity coupling and
R
Y 5. Co planar wave guide feed.
&
D
E
S
I
G
N
A
N Microstrip line feed
T
E
N
N
A

T
H Equivalent Circuits
E
O
R
Y • Easy to fabricate.
& • Simple to match by controlling the inset feed position.
D
• Low spurious radiation (≈- 20dB)
E
S • Narrow bandwidth (2-5%)
I • As the substrate height increases, the surface waves and spurious feed radiation
G
increases.
N
** any emission at other frequency outside its frequency band: spurious radiation
A
N Inset-Feed
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N Coaxial (Probe) feed
T
E
N
N
A

T
H Equivalent Circuits
E
O
• Easy to fabricate and match.
R
Y • Simple to match by controlling the position.
& • Low spurious radiation (≈- 30dB)
D
• Narrow bandwidth (1-3%)
E
S • More difficult to model especially for thick substrates (h>0/50).
I • Both the microstrip feed line and the probe possess inherent asymmetries
G
which generate higher order modes which produce cross-polarized radiation.
N
• To overcome some of these problems, non-contacting aperture-coupling feeds.
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N Proximity coupled feed
T
E
N
N
A

T
H
E
O Equivalent Circuit
R • This is one of the non-contacting non coplanar Microstrip feed technique.
Y • In this particular configuration,
& • the patch antenna is on the upper layer substrate and
D
E • the Microstrip feed line on the lower layer substrate as its uses 2 layers
S of substrate.
I • Easier to model, Low spurious radiation
G
N • Largest bandwidth (13%) and More difficult to fabricate.
• Length of feeding stub and width to line ratio of patch can control match
A
N Aperture coupled feed
T
E
N
N
A

T
H
E
O
R
Y
&
D • Feed technique comes under the non-contacting feed techniques.
E
S • In this technique, the radiating patch and the micro strip feed line are being
I separated by the ground plane.
G
• The slot on ground plane separating the two substrates is used to couple the
N
energy to the patch.
A
N
T
E
N • Easy to model.
N
A • Most difficult to fabricate Equivalent Circuits
• Narrow bandwidth (1-4%)
T
• Moderate spurious radiation (≈- 20dB below ground plane)
H
E • Ground plane between substrate
O • isolates the feed from the radiating element and minimizes interference.
R
• minimizes interference of spurious radiation for pattern formation and
Y
& polarization purity.
D • Independent optimization of the feed and radiating element.
E
• Typically high dielectric is used for bottom substrate and thick and low
S
I dielectric material for the top
G • Feed-line width, slot size and position in ground plane and electrical
N
parameters can optimize design and match.
A
N
T
E • Typically matching is performed by controlling the width of the feed line and
N the length of the slot.
N
• The coupling through the slot can be modelled using the theory of Bethe,
A
which is also used to account for coupling through a small aperture in a
T conducting plane.
H
• In this theory the slot is represented by an equivalent normal electric dipole
E
O to account for the normal component (to the slot) of the electric field, and an
R equivalent horizontal magnetic dipole to account for the tangential
Y
component (to the slot) magnetic field.
&
D • If the slot is centered below the patch, where ideally for the dominant mode
E the electric field is zero while the magnetic field is maximum, the magnetic
S
coupling will dominate.
I
G • This technique leads to good polarization purity and no cross-polarized
N radiation in the principal planes.
A
N Comparison of Feeding Techniques in MSA
T
E
N Characteristics Microstrip Coaxial Aperture Proximity
N Line Feed Feed Coupled Coupled
A Feed Feed
Spurious feed More More Less Minimum
T radiation
H Reliability Better Poor Good Good
E
O Ease of Easy Soldering Alignment Alignment
R Fabrication & Drilling required required
Y needed
&
Impedance Easy Easy Easy Easy
D
Matching
E
S Bandwidth (2-5)% (1-3)% (1-4)% 13%
I
G
N
A
N Methods of Analysis (Models)
T
E
N 1. Transmission line model
N
2. Cavity model
A
3. Full wave model
T
a. Integral Equation (MOM) – IE3D
H
E b. Finite difference time domain
O
c. Finite element method (FEM)- HFSS
R
Y d. Finite integral transform (FIT) - CST
&
D
E
S
I
G
N
A
N
T 1. Transmission line model
E
N Simplest
N has physical insight
A
less accurate

T 2. Cavity model
H more complex
E
more accurate
O
R has physical insight
Y 3. Integral Equation Model
&
very complex
D
E more accurate
S very versatile [single element, finite array, infinite array,
I
stacked elements, arbitrary shape elements ]
G
N less physical insight
# difficult to model arbitrary shaped structures
A
N Rectangular Microstrip Patch Antenna (RMPA)
T
E
N
N
A

T
H
E
O
R
Y
& Basic Characteristics: t  0  0.010
D
E 0.0030  h  0.050
S 0 / 3  L  0 / 2
I
G 2.2   r  12
N
W  0
A
N Fringing Effects
T
E
N The electric field lines in the antenna mostly move in the substrate
N
A and even a bit out of the substrate in to the air. Due to this the
transmission lines are not able to support the pure transverse electric
T
H magnetic (TEM) mode of transmission because the lines in the
E substrate and lines in the air have different phase velocities.
O
R
Y In order to have a notice of wave propagation and the fringing in the
&
D line the εreff – the effective dielectric constant has to be calculated.
E The value of εreff is slightly less than that of εr
S
I We can see that the fringing fields are not confined only in the
G substrate but some are out in the air.
N
A
N Fringing Effects in RMPA
T
E • The fields at the edges of the patch undergo fringing because the
N
N dimensions of the patch are finite along the length and width.
A • The amount of fringing is a function of the dimensions of the patch

T and height of the substrate.

H • Fringing is a function of
E
O • L/h
R • εreff
Y
&
D
E
S
I
G
N
##for microstrip antenna, L/h>>1, fringing is reduced
A
N Effective dielectric constant
T
E • The effective dielectric constant is a function of frequency.
N
N • As the frequency increases, most of the E field lines concentrate in
A the substrate and microstrip lines behave as homogeneous line of

T one dielectric (only the substrate).

H
 0 eff  eff
2
 kz 
2
E  reff     2 
O  k0   0 0 0
R 
1
Y  r 1  r 1  h 2
 reff   1  12
& 2 2  W 
D
E 1   reff  r
S
Where, εr - The dielectric constant of the substrate
I
εreff - Effective dielectric constant.
G
h - Height of the dielectric substrate.
N
W - Width of the patch.
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N Effective dielectric constant versus frequency for typical substrates
A
N Effective length
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N Effective length
T
E • Microstrip antenna looks greater than its physical dimensions
N
because of the fringing effects.
N
A • The effective length (Leff) of the patch is given by:

T Leff  L  2L
H
E  reff  0.3  0.264
W 
O L  0.412h  h 
R
Y
 reff  0.258  0.8 
W 
 h 
&
D • Change in length is a function of εreff and W/h.
E • For the particular resonate frequency the effective length of the patch
S
I is calculated by: c
Leff 
G 2 f r  reff
N
## R.F Harington, “Time harmonic Electromagnetic Fields” 1961
A
N Resonant Frequency
T
E
Considering the rectangular patch Microstrip antenna, the resonating
N
N frequency for the mode TMmnp is given by:
A
 m  2  n  2  p  2 
T  f r mnp  1
      
H 2   h   L   W  
E
O
Where, m, n, p are the operating modes of the Microstrip patch antenna,
R
Y along with height of substrate (h), length (L) and width (W).
&
The resonating frequency for the mode TM010 is given by:
D
E
S  f r 010  c
I 2L  r
G
N
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N Fringing Factor (q)
T
E
N ( f rc ) 010
N q
A ( f r ) 010
T
H
E
Where
 f r 010  c
O 2L  r
R
Y  f rc 010  c

c
& 2 Leff  reff 2( L  2L)  reff
D
E
S
I
G
N
A
N Conductance
T
E • Each radiating aperture is modelled as a narrow slot of width W and
N height h radiating into half space.
N
A

T
H
E
O
R
Y
& Rectangular microstrip patch and its equivalent circuit transmission-line model.
D
E Since slot #2 is identical to
S slot #1.
I
Its equivalent admittance is:
G
N Y2 = Y1, G2 = G1, B2 = B1.
A
N
T
E The conductance of a single slot can also be obtained by using the field
N
N expression derived by the cavity model.
2 Prad
A In general, the conductance is defined as G 2
V0
T It can be calculated using this equation  1  W 2
H    W  0
 90 
G  0
E
O
R  1  W W  
120  0  0
Y   
&
D
E
S
I
G
N
Slot conductance as a function of slot width
A
N Resonant Input Resistance
T
E • The total admittance at slot #1 (input admittance) is obtained by
N transferring the admittance of slot #2 from the output terminals to
N
A input terminals using the admittance transformation equation of
transmission lines.
T
H • Ideally the two slots should be separated by λ/2 where λ is the
E wavelength in the dielectric (substrate). However, because of fringing
O
R the length of the patch is electrically longer than the actual length.
Y • Therefore, the actual separation of the two slots is slightly less than
&
D λ/2. (typically 0.48λ < L < 0.49λ).
E • The transformed admittance of slot #2 becomes
S ~
I  G2  G1 and ~ ~ ~

G ~
Y2  G2  j B2  G1  jB1
N B2   B1
A
N
T ~
E • The total input admittance is real and given by Yin  Y1  Y2  2G1
N
N
A • The Resonant input impedance is  Z  1  R  1
in in
Yin 2G1
T
H
E
O • Taking mutual effects between the slots into account, The Resonant
R
Y input resistance will be
1
& Rin 
D 2G1  G12 
E
S where the plus (+) sign is used for modes with odd (anti-symmetric)
I resonant voltage distribution beneath the patch and between the slots
G
while the minus (−) sign is used for modes with even (symmetric)
N
resonant voltage distribution.
A
N
T
E • The mutual conductance is defined in terms of the far fields
1
N G12  2
Re  E1  H 2* .ds
N V0 s
A
where E1 is the electric field radiated by slot #1, H2 is the magnetic field
T radiated by slot #2, V0 is the voltage across the slot, and the integration
H
is performed over a sphere of large radius
E
O • G12 is calculated (the approximation)   k0W 
2

R   sin cos 
1  2   J k L sin  sin3 d
120 2 0 
Y G12  
cos
0 0

&  
D
E where J0 is the Bessel function of the first kind of order zero
S • Note: The resonant input resistance can be decreased by increasing the width
I
W of the patch.
G
N • This is acceptable as long as the ratio of W/L does not exceed 2 because the
aperture efficiency of a single patch begins to drop, as W/L increases beyond 2.
A
N
T
E L
Zc 
N C
N W0 L W0
A C  C perunitlength 
h h
T 0 0 r  0 0 r  0 0 r
H Zc  W0  0 rW0
E C
h h
O
0 h 0 h
R  
Y 0  r W0 W0  r
& • A better approximation for characteristic impedance.
D
E 60  8h W0  W0
ln   , when 1
S  reff W0 4h  h
I Zc  { 120 W0
G , when 1
W0  W0  h
N  reff  h  1. 393  0 . 667 ln  1. 444 
  h 
A
N
T
E
N
N
A

T
H
E
O Recessed microstrip-line feed
R Normalized input resistance
Y
The input resistance for the inset feed is given approximately by:
&

D Rin ( y  y0 )  Rin ( y  0) cos (
2
y0 )
E L
S As the inset feed-point distance y0 increases, the resonant input resistance
I decreases. At y0=L/2, the input resistance vanishes.
G
N This feeding mechanism cab be very useful for matching patches to lines with
small values of characteristic impedance on the order of 50 .
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N Drawbacks of Transmission line Model
T
E Transmission line model is conceptually simple but has a number of
N
N drawbacks.
A • Transmission line model is often inaccurate in predicting

T impedance bandwidth of RMPA for thin substrate.

H • Transmission line model does not take into consideration the
E
O possible excitation of modes which are not along the
R Transmission line.
Y
& • Transmission line model assumes the current flow in one
D direction along the Transmission line. In reality, current
E
S transverse to these assume currents can exists in RMPA.
I
G
N
A
N Cavity Model
T
E • The structure of the model– the inner region of the patch is filled as a cavity,
N bounded by the electric walls on both ways i.e. on top and bottom, and a
N
magnetic wall thorough the periphery.
A
• When the microstrip patch is energized, a charge distribution is established
T on the upper and lower surfaces of the patch, as well as on the surface of the
H
E ground plane, as shown in Figure.
O • The charge distribution is controlled by two mechanisms; an attractive and a
R repulsive mechanism.
Y
&
D
E
S
I
G
N
Charge distribution and current density creation on microstrip patch
A
N
T
E • The attractive mechanism is between the corresponding opposite
N
charges on the bottom side of the patch and the ground plane, which
N
A tends to maintain the charge concentration on the bottom of the patch.
• The repulsive mechanism is between like charges on the bottom
T
H surface of the patch, which tends to push some charges from the
E
bottom of the patch, around its edges, to its top surface.
O
R • The movement of these charges creates corresponding current
Y
densities Jb and Jt , at the bottom and top surfaces of the patch,
&
D respectively.
E
S
I
G
N
A
N Modes and Fields Configuration
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N
T
E The resonating frequency for the mode TMmnp is given by:
N
N
 m  2  n  2  p  2 
A  f r mnp  1
      
2   h   L   W  
T
H Where, m, n, p are the number of half cycle field variations along the x, y, z
E
direction i.e. height of substrate (h), length (L) and width (W).
O
R Example:
Y
The resonating frequency for the mode TM010 is given by:
&
D  f r 010  c
E 2L  r
S The resonating frequency for the mode TM001 and TM020 is given by:
I
G  f r 001  c
 f r 020  c
N 2W  r L r
A
N Design a Rectangular Microstrip Patch Antenna
T
E Design Parameter Specifications
N Dielectric Constant of the substrate 9.8(alumina)
N Operating frequency 2.1GHz
A Height of the substrate 1.59mm
Feeding method Microstrip Line Feed & Co-
T Axial Feed
H Gain 5dB-8dB
E Polarization Linear
O
R Design Procedure
Y Step 1: Calculation of Width(W):
&
D 1 2 c 2
E W  
2 f r  0 0  r1 2 f r  r1
S
I With the substituting the values of c= 3x108 m/s, fr = 2.1GHz and h =1.5mm
G W= 0.0307m = 30.7mm
N
A
N
T
E Step 2: Calculation of Effective dielectric constant (εreff):
N
1
N 
 r 1  r 1  h 2
A  reff   1  12
2 2  W 
T
H With the substituting the values εr= 9.8, h = 1.5mm, W=30.7mm
E
Effective Dielectric Constant = 8.89
O
R Step 3: Calculation of Effective Length(Leff):
Y
& c
Leff 
D 2 f r  reff
E
S
I With the values εreff= 8.89, c= 3x108m/s fr = 2.1GHz
G
Leff= 0.0239m = 23.9mm
N
A
N
T
E Step 4: Calculation of the Length extension (L)
N
N
 reff  0.3  0.264
W 
L  0.412h  h 
A
 reff  0.258  0.8 
W 
T  h 
H With the values from h, w and εreff the ΔL is being calculated as 0.6mm
E ΔL= 0.6mm
O
R Step 5: Calculation of Patch Length(L):
Y
& L  Leff  2L
D
E
S
I Leff= 0.0239m = 23.9mm, L=23.9mm-1.2 mm=22.7mm
G
N
A
N
T
E Step 6: Feed point determination:
N As there feed type has been specified and the parameters are
N
calculated. The matching impedance is 50Ω. In order to have a
A
matching of the impedance the connecter has to be placed at some
T
distance from the edge which has a match of 50Ω. There is a trial and
H
E error method that has been adopted to check the minimum value of the
O
Return loss. So, Software plays an important role.
R
Y
&
D
E
S
I
G
N
A
N
T
E
N Design a rectangular patch antenna using a substrate RT duroid with
N
dielectric constant of 2.2, h=1.59mm so as to resonate at 10 GHz.
A

T
Sol.
H
E W=11.86 mm
O
Effective dielectric constant = 1.972
R
Y Length extension = 0.81 mm
&
Leff = 10.68mm
D
E L=9.06 mm
S
I
G
N
A
N RMPA Characterization
T
E 1. Impedance Bandwidth
N
N
A

T
H
E
O
R
Y
&
D
E
S
I S11 for 20GHz rectangular patch antenna
G
N ##for the practical applications VSWR=2 is acceptable as the return loss would be -9.54dB
A
N
T
E 2. Radiation Pattern
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N Beamwidth
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N Fields Configurations (modes) of RMPA
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N Q-factor, BW and Efficiency
T
E The quality [Q] factor is a figure-of-merit that is representative of the
N
N antenna losses.
1 1 1 1 1
A Antenna loss     
Qt Qd Qc Qr Qsw
Where,
T
H Qt – total antenna quality factor
E Qc –quality factor due to conduction (ohmic) loss
O rWT h h
R     h f
Y Pc  1 f
& W 1
D Qd – quality factor due to dielectric losses Qd  r T 
Pd tan 
E Qsw – quality factor due to surface waves
S
Qrad –quality factor due to radiation (space wave) losses
I

2
E .dA
G  rWT 2 r
  K where, K area
N

2
Prad hGt / l E .dl
perimeter
A
N
T
E For very thin substrates, the losses due to surface waves are very small
N
and can be neglected
N
1  Prad
A
 Antenna Loss   tan   
T
Qt h  rWT
Where, r – angular resonant frequency
H
E W T – total energy stored in patch at resonant frequency.
O Pd – dielectric loss
R tan - loss tangent of the dielectric material
Y σ – conductivity
&  - permeability of the conductor
D Pc – conductor loss.
E f – operating frequency
S h – height of the substrate
I  - skin depth of the conductor
G Prad – power radiated from the patch
N GT/l – Total conductance per unit length
A
N Circular Microstrip Patch Antenna (CMPA)
T
E 0
N t  0 
N
100
A 0.0030  h  0.050
0 / 3  2a  0 / 2
T
H 2.2   r  12
E
O
R
Y
&
D
E
S
I
G
N
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N
T

(k  )  (k z )  (k r )  r 
E 2 2 2 2
N
N
A The cylindrical coordinates are used to represent the fields within the
cavity while Jm(x) is the Bessel function of the first kind of order m and
T
H  mn
'
E k  , and
O a
R p
Y kz 
h
&
D where, m  0,1,2,....., n  1,2,3,......., and, p  0,1,2,........
E
S ’mn represents the zeroes of the derivative of the Bessel function
I Jm(x) and they determine the order of the resonant frequencies.
G
N
A
N Resonant Frequency
T

(k  )  (k z )  (k r )  r 
E 2 2 2 2
N
N
A For most typical microstrip antennas , the substrate height is very
small , the fields along z are essentially constant and p=0, thus kz=0.
T
H Therefore, the resonant frequencies for TMzmn0 modes can be written
E
as:
O
  mn
'
   mn
'

 f r mn 0 1 c
R
Y      
& 2   a  2  r  a 
D
E
S  f r 110 
1.8412

c
I 2a  2a  r
G
N
A
N Design Procedure
T
E
Specify: r, fr (in Hz), h (in cm)
N
N
A
Determine: the actual radius of a circular patch.
T
H
F
E a (cm)
 F 
O 1
2h
R {1  {ln   1.7726]} 2
Y  r F  2h 
&
D 8.791109
E where, F 
S fr  r
I
G
N
A
N
T
E
N
N
A

T
H
E
O
R
Y
&
D
E
S
I
G
N
A
N Bandwidth Enhancement Techniques
T
E
a. Thick Substrates: The approximate expression for calculating the
N
N percentage bandwidth of a microstrip element is
A
h W
% BW  A
T 0  r L
H
E
O where W = width of the element
R
L = length of the element
Y
& h = substrate thickness
D
λ0 = free space wavelength
E
S εr = dielectric constant
I
A = multiplication factor(=180,200 or 220 depending on h, λ0, εr)
G
N
A
N
T
E b. Lossy Elements: Bandwidth of a microstrip element is inversely
N proportional to the Quality factor.
N
A In turn Quality factor is inversely proportional to the power losses.
Thus bandwidth can be increased by introducing high losses in the
T
H microstrip element.
E This can be done by adding attenuators in series with microstrip
O
VSWR  1
R patch. % BW   100
Y Q VSWR
& Where Q = quality factor = Energy stored
D Power Loss
E 1 |  |
VSWR 
S 1 |  |
I Z in  Z o
G 
Z in  Z o = measure of reflected signal at the feed point of the antenna
N
A
N
T
E c. Multiple Resonances: [Stacked Multi-patch Antennas]
N Radiating Patch
N
A L1
ε1
h
T Δ
L2

H h ε2
E Aperture
O Ground Plane
R
Y
&
D
Feed Line
E
S (b) Aperture Coupled

I
(a) Electromagnetically Coupled
G
N
A
N
T
E
N Individual responses of closely spaced radiating elements
N
A

T
H
E
O
R
Y
&
D
E
S f2
f3
f1
I
G Combined response yielding wide band

N
A
N
T
E d. Partial Ground Plane:
N
N
A W
V
I
V

T
H Radiating Slots

E
O Inner Fringing field responsible
Radiating Patch
R for high frequencies

Y
&
D
E Outer Fringing field responsible
for low frequencies
S
I
G
N (a) Electric Fields for Radiating Patch
smaller than Ground Patch
(b) Electric Fields for Radiating Patch
bigger than Ground Patch
A
N Design constraints in antenna design (2.1)

T
E (i) A suitable antenna should offer a desired impedance bandwidth
N
N (ii) The performance of a UWB antenna is required to be consistent
A over the entire operational frequency band. The radiation patterns,
gain and impedance bandwidth of the antenna should be stable
T over the entire band.
H (iii) An antenna should have these features: low profile, easy to
E fabricate, compact and easy to integrate with other Printed Circuit
O Board (PCB) based systems.
R
Y (iv) A good design of antenna should be optimal for the performance of
& overall system. Thus, the overall device complies with the
D mandatory power emission mask given by the FCC or other
E regulatory bodies.
S (v) An antenna is required to realize good time domain characteristics.
I It means that there is minimum pulse distortion in the received
G waveform. It is a primary concern of a suitable wideband antenna
N because the signal is the carrier of useful information
A
N Reference
T
E
N 1. C A Balanis, Antenna Theory and Design, 3rd Edition, Wiley, 2005.
N 2. G Kumar and K P Ray, Broadband Microstrip Antenna, Arctech
A
Publication, 2003.
T 3. R K Shevgaonkar, Electromagnetic Waves, 2006
H
E
O
R
Y
&
D
E
S
I
G
N