Professional Documents
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Series Editors
Professor Arthur Willoughby, University of Southampton, Southampton, UK
Dr Peter Capper, Ex-Leonardo MW Ltd, Southampton, UK
Professor Sofa Kasap, University of Saskatchewan, Saskatoon, Canada
Published Titles
Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials, Edited by P. Capper
Properties of Group-IV, III—V and II—VI Semiconductors, S. Adachi
Charge Transport in Disordered Solids with Applications in Electronics, Edited by S. Baranovski
Optical Properties of Condensed Matter and Applications, Edited by J. Singh
Thin Film Solar Cells: Fabrication, Characterization, and Applications, Edited by J. Poortmans and V.
Arkhipov
Dielectric Films for Advanced Microelectronics, Edited by M. R. Baklanov, M. Green, and K. Maex
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials, Edited by P. Capper and M. Mauk
Molecular Electronics: From Principles to Practice, M. Petty
Luminescent Materials and Applications, A. Kitai
CVD Diamond for Electronic Devices and Sensors, Edited by R. S. Sussmann
Properties of Semiconductor Alloys: Group-IV, III—V and II—VI Semiconductors, S. Adachi
Mercury Cadmium Telluride, Edited by P. Capper and J. Garland
Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, Edited by C. Litton, D. C.
Reynolds, and T. C. Collins
Lead-Free Solders: Materials Reliability for Electronics, Edited by K. N. Subramunian
Silicon Photonics: Fundamentals and Devices, M. Jamal Deen and P. K. Basu
Nanostructured and Subwavelength Waveguides: Fundamentals and Applications, M. Skorobogatiy
Photovoltaic Materials: From Crystalline Silicon to Third-Generation Approaches, Edited by G. Conibeer
and A. Willoughby
Glancing Angle Deposition of Thin Films: Engineering the Nanoscale, Matthew M. Hawkeye, Michael T.
Taschuk, and Michael J. Brett
Physical Properties of High-Temperature Superconductors, R. Wesche
Spintronics for Next Generation Innovative Devices, Edited by Katsuaki Sato and Eiji Saitoh
Inorganic Glasses for Photonics: Fundamentals, Engineering and Applications, Animesh Jha
Amorphous Semiconductors: Structural, Optical and Electronic Properties, Kazuo Morigaki, Sandor Kugler,
and Koichi Shimakawa
Microwave Materials and Applications, Two volume set, Edited by Mailadil T. Sebastian, Rick Ubic, and Heli
Jantunen
Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics, Edited by Hajime
Asahi and Yoshiji Korikoshi
Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties, and Applications, Edited by
Stuart Irvine and Peter Capper
Optical Properties of Materials and Their
Applications
Edited by
Jai Singh
College of Engineering, IT and Environment
Charles Darwin University, Darwin, Australia
Second Edition
This edition first published 2020
© 2020 John Wiley & Sons Ltd
Edition History
John Wiley & Sons Inc. (1e, 2006)
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Library of Congress Cataloging-in-Publication Data
Names: Singh, Jai, editor.
Title: Optical properties of materials and their applications / edited by
Jai Singh (College of Engineering, IT, and Environment, Charles Darwin
University, Darwin, Australia)
Other titles: Optical properties of condensed matter and applications. |
Optical properties of condensed matter and applications.
Description: Second edition. | Hoboken, NJ : John Wiley & Sons, 2020. |
Series: Wiley series in materials for electronic and optoelectronic
applications | Previous edition: Optical properties of condensed matter
and applications, 2006. | Includes bibliographical references and index.
Identifiers: LCCN 2019023895 (print) | LCCN 2019023896 (ebook) | ISBN
9781119506317 (cloth) | ISBN 9781119506065 (adobe pdf ) | ISBN
9781119506058 (epub)
Subjects: LCSH: Condensed matter–Optical properties. | Materials–Optical
properties. | Electrooptics–Materials.
Classification: LCC QC173.458.O66 O68 2020 (print) | LCC QC173.458.O66
(ebook) | DDC 530.4/12–dc23
LC record available at https://lccn.loc.gov/2019023895
LC ebook record available at https://lccn.loc.gov/2019023896
Cover Design: Wiley
Cover Images: © mitchFOTO / Shutterstock
Set in 10/12pt WarnockPro by SPi Global, Chennai, India
10 9 8 7 6 5 4 3 2 1
v
Contents
List of Contributors xv
Series Preface xvii
Preface xix
6 Photoluminescence 157
Takeshi Aoki
6.1 Introduction 157
6.2 Fundamental Aspects of Photoluminescence (PL) in Materials 158
6.2.1 Intrinsic Photoluminescence 159
6.2.2 Extrinsic Photoluminescence 160
6.2.3 Up-Conversion Photoluminescence (UCPL) 162
6.2.4 Other Related Optical Transitions 163
6.3 Experimental Aspects 164
6.3.1 Static PL Spectroscopy 164
6.3.2 Photoluminescence Excitation Spectroscopy (PLE) and
Photoluminescence Absorption Spectroscopy (PLAS) 167
6.3.3 Time Resolved Spectroscopy (TRS) 168
6.3.4 Time-Correlated Single Photon Counting (TCSPC) 171
6.3.5 Frequency-Resolved Spectroscopy (FRS) 172
6.3.6 Quadrature Frequency Resolved Spectroscopy (QFRS) 173
6.4 Photoluminescence Lifetime Spectroscopy of Amorphous
Semiconductors by QFRS Technique 175
6.4.1 Overview 175
6.4.2 Dual-Phase Double Lock-in (DPDL) QFRS Technique 176
viii Contents
Index 627
xv
List of Contributors
Series Preface
Arthur Willoughby
Peter Capper
Safa Kasap
xix
Preface
The second edition, being published more than 10 years after the first edition, presents
state-of-the-art developments in almost all topics related to the optical properties of
materials and their applications presented in the first edition. Since the publication of the
first edition in 2006, many advances have been made in fields such as the optical prop-
erties of materials, electroluminescence in organic light-emitting devices, organic solar
cells, opto-electronic devices, etc. It is hence very timely to update all the chapters in
the first edition by adding developments since 2006 to produce the second edition. This
second edition contains 15 of the original 16 chapters, all of which have been updated,
as well as 5 brand new chapters, contributed by very experienced and well-known sci-
entists and groups available on different aspects of the optical properties of materi-
als. The study of optical properties of materials has now become an interdisciplinary
field, and scientists of physical, chemical, and biological sciences; nanotechnology engi-
neers; and industry researchers have strong interests in this field. The field offers one of
the fastest-growing research platforms in material sciences. The second edition covers
many examples and applications in the field of electronic and optoelectronic properties
of materials, and in photonics. Most chapters are presented to be relatively indepen-
dent with minimal cross-referencing, and chapters with complementary contents are
arranged together to facilitate a reader with cross-referencing.
Books written in this field mostly follow one of the two pedagogies: chapters are either
based on (i) physical processes, or (ii) the various classes of materials. This book com-
bines the two approaches by first identifying the processes that should be described
in detail, and then introducing the relevant classes of materials. Many books also miss
the details of how various optical properties are measured. This book presents a com-
prehensive review of experimental techniques, including recent advances in ultrafast
(femtosecond) spectroscopy of materials. Not many books are currently available with
such a wide coverage of the field with clarity and levels of readership in a single volume
as this book.
In Chapters 1 and 2 by Kasap et al., the fundamental optical properties of materials
are reviewed, and as such these chapters are expected to refresh the readers with the
basics by providing useful optical relations. In Chapter 3, Shimakawa et al. present an
up-to-date review of the optical properties of disordered inorganic solids, and Chapter 4
by Edgar presents an extensive discussion on the optical properties of glasses. Chapter
5 by Singh and co-workers presents the concept of excitons in inorganic and organic
semiconductors, both crystalline and non-crystalline variants. In Chapter 6, Aoki has
presented a comprehensive review of the experimental advances in the techniques of
xx Preface
CHAPTER MENU
Introduction, 1
Optical Constants n and K, 2
Refractive Index and Dispersion, 7
The Swanepoel Technique: Measurement of n and 𝛼 for Thin Films on Substrates, 16
Transmittance and Reflectance of a Partially Transparent Plate, 25
Optical Properties and Diffuse Reflection: Schuster–Kubelka–Munk Theory, 27
Conclusions, 31
References, 32
1.1 Introduction
Optical properties of a material change or affect the characteristics of light passing
through it by modifying its propagation vector or intensity. Two of the most important
optical parameters are the refractive index n and the extinction coefficient K, which are
generically called optical constants, although some authors include other optical coeffi-
cients within this terminology. The latter is related to the attenuation or absorption coef-
ficient 𝛼. In Part I, in this chapter, we present the complex refractive index, the frequency
or wavelength dependence of n and K, so-called dispersion relations, how n and K are
inter-related, and how n and K can be determined by studying the transmission as a
function of wavelength through a thin film of the material. Physical insights into n and K
are provided in Part II (Chapter 2). In addition, there has been a strong research inter-
est in characterizing the optical properties of inhomogeneous media, such as porous
media, in which both light absorption and scattering take place so that the reflectance
is not specular but diffuse. The latter problem is now included in this second edition.
The optical properties of various materials, with n and K being the most important,
are available in the literature in one form or another, either published in journals,
books, and handbooks, or posted on websites of various researchers, organizations
(e.g. NIST), or companies (e.g. Schott Glass). Nonetheless, the reader is referred to the
Optical Properties of Materials and Their Applications, Second Edition. Edited by Jai Singh.
© 2020 John Wiley & Sons Ltd. Published 2020 by John Wiley & Sons Ltd.
2 1 Fundamental Optical Properties of Materials I
works of Greenway and Harbeke [1], Wolfe [2], Klocek [3], Palik [4, 5], Ward [6],
Efimov [7], Palik and Ghosh [8], Nikogosyan [9], and Weaver and Frederikse [10]
for the optical properties of a wide range of materials. Adachi’s books on the optical
constants of semiconductors are highly recommended [11–13], along with Madelung’s
third edition of Semiconductors: Data Handbook [14]. There are, of course, other books
and handbooks that also contain optical constants in various chapters; see, for example,
references [15–20]. There are also various books that describe optical properties
of solids at the senior undergraduate and introductory graduate levels, such as those
by Tanner [21], Jimenez and Tomm [22], Stenzel [23], Fox [24], Simmons and Potter
[25], Toyozawa [26], Wooten [27], and Abeles [28], which are highly recommended.
A number of experimental techniques are available for measuring n and K, some
of which have been summarized by Simmons and Potter [25]. For example, ellipsom-
etry measures changes in the polarization of light incident on a sample to sensitively
characterize surfaces and thin films (see Chapter 23 in this volume). The interaction
of incident polarized light with the sample causes a polarization change in the light,
which may then be measured by analyzing the light reflected from the sample. Collins
has also provided an extensive in-depth review of ellipsometry for optical measure-
ments [29]. One of the most popular and convenient optical experiments involves a
monochromatic light passing through a thin sample, and measuring the transmitted
intensity as a function of wavelength, T(𝜆), using a simple spectrophotometer. For thin
samples on a thick transparent substrate, the transmission spectrum shows oscillations
in T(𝜆) with the wavelength due to interferences within the thin film. Swanepoel’s tech-
nique uses the T(𝜆) measurement to determine n and K, as described in Section 1.4.
K = 𝜀′′r ∕2n—that is, the refractive index is essentially determined by the real part of 𝜀r
and K is determined by the imaginary part of 𝜀r , which is known to represent losses in
a dielectric medium.
The extinction coefficient K represents loss from the energy carried by the propagat-
ing EM wave by conveniently including this loss as the imaginary part in the complex
refractive index. The optical attenuation coefficient 𝛼 gauges the rate of this loss from
the propagating EM wave. In the absence of scattering, the attenuation would be due
to absorption within the medium. For an EM wave that is propagating along x with an
intensity I, 𝛼 is defined by
dI
𝛼=− (1.3)
Idx
We can relate 𝛼 and K quite easily by taking a plane wave traveling along x for which
the electric field in the wave propagates as E = Eo expi(kx − 𝜔t), where Eo is a constant,
𝜔 is the angular frequency and k is the complex propagation constant in the medium,
related to n* by its definition k = n*𝜔/c = (n + iK)(𝜔/c). In free space k = k o = 𝜔/c = 2𝜋/𝜆,
where 𝜆 is the free space wavelength. We can substitute for n* and then use I is pro-
portional to |E|2 to find I ∝ exp[−2(𝜔/c)Kx)]—that is, I decays exponentially with the
distance propagated. We can substitute for I in (1.3) to find
2𝜔
𝛼= K (1.4)
c
The optical constants n and K can be determined by measuring the reflectance from
the surface of a material as a function of polarization and the angle of incidence. For
normal incidence, the reflection coefficient, r, is obtained as
1 − n∗ 1 − n − iK
r= = (1.5)
1 + n∗ 1 + n + iK
4 1 Fundamental Optical Properties of Materials I
(b) R
1 Reflectance
0.5
0 ω/ωo
0 1 2 3
1.2 Optical Constants n and K 5
It is seen from Figure 1.1 that √ n and K peak close to 𝜔 = 𝜔o . If a material has a 𝜀′′r
≫ 𝜀r , then 𝜀r ≈ i𝜀r , and n ≈ K ≈ 𝜀′′r ∕2 is obtained from Eq. (1.1b). Figure 1.1b shows
′ ′′
the dependence of the reflectance R on the frequency. It is observed that R reaches its
maximum value at a frequency slightly above 𝜔 = 𝜔o , and then remains high until 𝜔
reaches nearly 3𝜔o ; thus, the reflectance is substantial while absorption is strong. The
normal dispersion region is the frequency range below 𝜔o , where n falls as the frequency
decreases; that is, n decreases as the wavelength 𝜆 increases. Anomalous dispersion
region is the frequency range above 𝜔o where n decreases as 𝜔 increases. Below 𝜔o ,
K is small and, if 𝜀DC is 𝜀r (0), the DC permittivity, then
𝜔2o
n2 ≈ 1 + (𝜀DC − 1) ; 𝜔 < 𝜔o . (1.9)
𝜔2o − 𝜔2
Since, 𝜆 = 2𝜋c/𝜔, defining 𝜆o = 2𝜋c/𝜔o as the resonance wavelength, one gets:
𝜆2
n2 ≈ 1 + (𝜀DC − 1) ; 𝜆 > 𝜆o . (1.10)
𝜆2
− 𝜆2o
While intuitively useful, the dispersion relations in Eq. (1.8) are far too simple. More
rigorously, we have to consider the dipole oscillator quantum mechanically, which
means a photon excites the oscillator to a higher energy level—see, for example, Fox [24]
or Simmons and Potter [25]. The result is that we would have a series of 𝜆2 /(𝜆2 − 𝜆i 2 )
terms with various weighting factors Ai that add to unity, where 𝜆i represent different
resonance wavelengths. The weighting factors Ai involve quantum mechanical matrix
elements.
Figure 1.2 shows the complex relative permittivity and the complex refractive index
of crystalline silicon in terms of photon energy h𝜈 [31, 32]. For photon energies below
the bandgap energy (1.1 eV), both 𝜀′′r and K are negligible and n is close to 3.7. Both 𝜀′′r
and K increase and change strongly as the photon energy becomes greater than 3 eV,
far beyond the bandgap energy. Notice that both 𝜀′′r and K peak at h𝜈 ≈ 3.5 eV, which
corresponds to a direct photoexcitation processes, electrons excited directly from the
valence band to the conduction band, as discussed in Chapter 2.
50
40
8
ε r″
30 7
Real Imaginary
6
20 Real
εr′
5
10 4 n
εr″ Imaginary
0 3
εr′ 2 K
–10 K n
1
–20 0
1.5 2 3 4 5 6 0 2 4 6 8 10
Photon energy (ћω) Photon energy (ћω)
(a) (b)
Figure 1.2 (a) Complex relative permittivity of a silicon crystal as a function of photon energy plotted
in terms of real (𝜀′r ) and imaginary (𝜀′′r ) parts. (b) Optical properties of a silicon crystal vs. photon
energy in terms of real (n) and imaginary (K) parts of the complex refractive index. Source: Adapted
from D. E. Aspnes and A. A. Studna, 1983 [32] and H.R. Philipp and E.A. Taft, 1960 [31].
where 𝜔′ is the integration variable, P represents the Cauchy principal value of the inte-
gral, and the singularity at 𝜔 = 𝜔′ is avoided.
Similarly, one can relate the real and imaginary parts of the polarizability, 𝛼 ′ (𝜔) and
𝛼 (𝜔), and those of the complex refractive index, n(𝜔) and K(𝜔), as well. For a complex
′′
concentration, Z is the total number of electrons per atom, and e and me are the charge
and mass of the electron, respectively. The f -sum rules provide a consistency check and
enable various constants to be interrelated.
Table 1.1 Cauchy’s dispersion parameters of Eq. (1.15) for Ge, Si, and Diamond from [43].
although, in recent years, many researchers have preferred to use the Sellmeier equation,
described in the following text.
Material A1 A2 A3 𝝀1 𝝀2 𝝀3
Various optical glass manufacturers such as Schott Glass normally provide the Sellmeier
coefficients for their glasses [53]. The optical dispersion relations for glasses have been
discussed by a number of authors [7, 25, 54].
There are other Sellmeier–Cauchy-like dispersion relationships that inherently take
account of various contributions to the optical properties, such as the electronic and
ionic polarization and the interaction of photons with free electrons. For example, for
many semiconductors and ionic crystals, two useful dispersion relations are,
B𝜆2 D𝜆2
n2 = A + + 2 , (1.18)
𝜆2−C 𝜆 −E
and
B C
n2 = A + + + D𝜆2 + E𝜆4 , (1.19)
𝜆2 − 𝜆o (𝜆 − 𝜆2o )2
2 2
Source: Si data from D.F. Edwards and E. Ochoa, Appl. Optics 19, 4130 (1980), others from W. L. Wolfe, The
Handbook of Optics, W.G. Driscoll and W. Vaughan, McGraw-Hill, New York, 1978.
10 1 Fundamental Optical Properties of Materials I
for a wide range of semiconductors have been compiled by Madelung in [14]. There
are many application-based articles in the literature that provide empirical dispersion
relations for a variety of materials; a recent example on far infrared substrates (Ge, Si,
ZnSe, ZnS, ZnTe) is given in reference [55]. There are both websites and various journal
articles in the literature that give the refractive index of numerous materials as a function
of wavelength.
∑
q
Ai (ℏ𝜔 − Eg )2 ∑
q
Boi (ℏ𝜔) + Coi
K= and n = n(∞) + , (1.20)
i=1
(ℏ𝜔)2 − Bi (ℏ𝜔) + Ci i=1
(ℏ𝜔)2 − Bi (ℏ𝜔) + Ci
where (ℏ𝜔) is the photon energy; q is an integer that represents the number of terms
needed to suitably model experimental n, K; Eg is the bandgap and Ai , Bi , C i , Boi , C oi are
constants; Boi and C oi depend on Ai , Bi , C i , and Eg —only the latter four are independent
parameters; and Boi = (Ai /Qi )[−(1/2)Bi 2 + Eg Bi – Eg 2 + C i ], C oi = (Ai /Qi )[(1/2)(Eg 2 + C i )
Bi − 2Eg C i ], and Qi = (1/2)(4C i − Bi 2 )1/2 . Forouhi and Bloomer provide a table of
FB coefficients, Ai , Bi , C i , and Eg for four terms in the summation in Eq. (1.20) [42] for
a number of semiconductors; an example that shows an excellent agreement between
the FB dispersion relation and the experimental data is shown in Figure 1.3. Table 1.4
provides the FB coefficients for a few selected semiconductors.
Other useful theoretical or somewhat semiempirical dispersion relationships have
also been proposed, for example, by Afromowitz [58], Adachi [59–63], Campi and
Papuzza [64], and others [65]. These models have been applied to various semiconduc-
tors and their alloys with relative success over certain photon energy ranges. One of the
useful and straightforward approaches to modeling the dispersion has been based on
writing the complex relative permittivity 𝜀r (ℏ𝜔) as a finite sum of a number of damped
harmonic oscillators (the so-called harmonic oscillator approximation), and fitting this
expression to the experimental data as in references [66, 67], even though many terms
may be needed and the curve fit process has to be carefully chosen to ensure a reliable
representation of the data. One of best models considered so far, however, has involved
parametric modeling [68–70], in which not only a sum of harmonic oscillators are used
but also Gaussian broadened polynomials to represent the dispersion of the complex
relative permittivity, and hence n and K.
1.3 Refractive Index and Dispersion 11
5
SiC
3 n
n, K
2
1
K
0
0 2 4 6 8 10 12 14
Photon energy (eV)
Figure 1.3 n and K versus photon energy for crystalline SiC. The solid line is obtained from the FB
equation with four terms with appropriate parameters, and the points represent the experimental
data. See original reference [42] for the data and details. Source: Reprinted with permission, from
Figure 2c, A.R. Forouhi and I. Bloomer, Phys. Rev. B, 38, 1865. Copyright (1988) by the American Physical
Society.
Table 1.4 FB coefficients for selected semiconductors [42] for four terms (i = 1 to 4).
Note: First entry in the box is for i = 1, and the fourth is for i = 4.
Gladstone–Dale formula [82, 83] is an empirical equation that allows the average
refractive index n of an oxide glass to be calculated from its density 𝜌 and its constituents
as:
n−1 ∑ N
= p1 k1 + p2 k2 + · · · = pi ki = CGD , (1.23)
𝜌 i=1
1.3 Refractive Index and Dispersion 13
Table 1.5 Various selected simple relationships proposed between n and the bandgap E g .
Relationship Comment/Reference
n4 Eg = K; K = constant Widely used, but has limitations. K ≈ 95 eV; 173 eV for Group IV
elements [75]; K = 108 eV [76]. For a theoretical derivation and
discussion of Moss’s rule, see [77].
( )2
2 A
n =1+ A ≈ 13.6 eV and B ≈ 3.4 eV. Hervé–Vandamme relationship. See text.
Eg + B
n = 4.084 + 𝛽Eg 𝛽 = −0.62 eV−1 . Proposed by Ravindra et al. [76], but has serious
limitations for small and large n.
n = − ln(0.027Eg ) The Reddy Equation [78]. Based on the Duffy relationship
Eg = 3.72Δ𝜒 op [79] and Δ𝜒 op = 9.8exp(−n) in [80], where Δ𝜒 op is
optical electronegativity.
12.417
n2 = √ See [81]. Equivalent to n4 (Eg − 0.365 eV) = 154. Similar to the Moss
Eg − 0.365 relation. Eg > 0.365 eV
Note: Eg is in eV.
where the summation is for various oxide components (each a simple oxide), pi is the
weight fraction of the i-th oxide in the compound, and k i is the refraction coefficient
that represents the polarizability of the i-th oxide. The right-hand side of Eq. (1.23) is
called the Gladstone–Dale coefficient C GD . In more general terms, as a mixture rule for
the overall refractive index, the Gladstone–Dale formula is frequently written as:
n − 1 n1 − 1 n −1
= w1 + 2 w2 + · · · , (1.24)
𝜌 𝜌1 𝜌2
where n and 𝜌 are the effective refractive index and effective density, respectively, of the
whole mixture; n1 , n2 ,… are the refractive indices of the constituents; 𝜌1 , 𝜌2 ,… represent
the density of each constituent; and w1 , w2 … are the weight fractions of the constituents.
Gladstone–Dale equations for the polymorphs of SiO2 and TiO2 give the average n,
respectively, as:
n(SiO2 ) = 1 + 0.21𝜌 and n(TiO2 ) = 1 + 0.40𝜌 (1.25)
It is generally assumed that the refractive index can be related to the polarizability 𝛼
through the well-known Lorentz–Lorenz equation (equivalent to the Clausius–Mossotti
equation in dielectrics), which involves the local field as
n2 − 1 1 ∑
= N𝛼 (1.26)
n + 2 3𝜀o j j j
2
in which 𝛼 j is the polarizability of a given type (species) (j) of atoms in the structure,
and N j is the concentration of this species of atoms. Equation (1.26) includes both elec-
tronic and ionic polarizability and assumes that the local field is the Lorentz field, which
depends on polarization through P/3𝜀o in the standard model for cubic crystals and
noncrystalline solids. Ritland [84] assumed that the local field depends on the polariza-
tion as bP/𝜀o , where b is a numerical constant, and reformulated Eq. (1.26) in SI units
14 1 Fundamental Optical Properties of Materials I
as
n2 − 1 b ∑
= N𝛼 (1.27)
n2 − 1 + (1∕b) 𝜀o j j j
and b is kept as a variable fitting parameter to the experimental data. Obviously, b = 1/3 is
the usual Lorentz–Lorenz equation, but the best fits do not necessarily lead to 1/3 [84].
Most recent work on the refractive index of glasses has invariably used the Sellmeier
equation, given its excellent fit to the dispersion data on glasses, as well as the adoption
of the Sellmeier equation by some industrial glass manufacturers such as Schott [85].
Further, in some cases, the temperature dependence of the Sellmeier coefficients are
also evaluated, so that dn/dT can be determined at different wavelengths [86–90]. While
dn/dT is positive for many semiconductors, this is not generally true for glasses.
WD relation can only be approximate, it has nonetheless found wide acceptance among
experimentalists due to its straightforward simplicity. For example, in 2018 alone, it has
been applied nearly 200 times to a wide variety of inorganic and organic material sys-
tems, particularly to semiconductor films.
1.47 Ng
1.46
n
1.45
1.44
500 700 900 1100 1300 1500 1700 1900
Wavelength (nm)
Incident
monochromatic
wave Monochromatic
light
nair = 1 T=1
Glass
nsubstrate = s substrate
α=0
Substrate
T
Detector
Figure 1.5 Schematic sketch of the typical behavior of light passing through a thin film on a substrate.
On the left, oblique incidence is shown to demonstrate the multiple reflections. In most
measurements, the incident beam is nearly normal to the film, as shown on the right.
0.9
0.8
STRONG ABSORPTION REGION
0.7
TRANSPARENT REGION
0.6
Transmittance
0.5
Interference Fringes
0.4
0.3
ABSORPTION REGION
0.2
Figure 1.6 An example of a typical transmission spectrum of a 0.969-μm-thick amorphous Se thin film
that has been vacuum coated on a glass substrate held at a substrate temperature of 50∘ C during the
deposition.
18 1 Fundamental Optical Properties of Materials I
Maxima
0.8 T
STRONG ABSORPTION REGION
0.7
0.6
TRANSPARENT REGION
Transmittance
Tm
0.4
0.3
0.2
Expt data
Substrate
0.1 Maxima Envelope
Minima Envelope
0
600 800 1000 1200 1400 1600 1800 2000
λ in nm
Figure 1.7 The construction of envelopes in the transmission spectrum of the thin a-Se film in
Figure 1.6.
1.4 The Swanepoel Technique: Measurement of n and α for Thin Films on Substrates 19
can be done by locating all the extreme points of the interference fringes in the trans-
mission spectrum and then making sure that the respective envelopes, T M (𝜆) for the
maxima and T m (𝜆) for the minima, pass through these extremes, the maxima and min-
ima, of T(𝜆) tangentially. From Eq. (1.30), it is not difficult to see that, at cos 𝜑 = ± 1,
the expressions that describe the two envelopes are,
Ax
Maxima∶TM = , (1.32a)
B − Cx + Dx2
Ax
Minima∶Tm = . (1.32b)
B + Cx + Dx2
Figure 1.7 shows two envelopes constructed for a transmission spectrum of an a-Se
thin film. It can also be seen that the transmission spectrum is divided into three spe-
cial regions according to their transmittance values: (i) the transparent region, where
T(𝜆) ≥ 99.99% of the substrate’s transmittance value of T s (𝜆), (ii) the strong absorption
region, where T(𝜆) is typical smaller than 20%, and (iii) the absorption region, in between
the two latter regions as shown in Figure 1.7.
The refractive index of the thin film can be calculated from the two envelopes, T M (𝜆)
and T m (𝜆), and the refractive index of the substrate s through
[ ]
[ ]
2 1∕2 1∕2
TM − Tm s2 + 1
2
n = N + (N − s ) ; N = 2s + , (1.33)
TM Tm 2
where N is defined by the second equation on the right hand side of Eq. (1.33). T M
and T m are assumed to be continuous functions of 𝜆 and x, so that values have to be
at the same wavelength for use in Eq. (1.33). The derivation of Eq. (1.33) is based on
considering 1/T m − 1/T M , which is 2C/A, and then substituting for C and A from earlier,
and then solving for n. Since the equation is not valid in the strong absorption region,
where there are no maxima and minima, the calculated refractive index has to be fitted
to a well-established dispersion model for extrapolation to shorter wavelengths before it
can be used to obtain other optical constants. Usually either the Sellmeier or the Cauchy
dispersion equation is used to fit n vs 𝜆 experimental data in this range. Figure 1.8 shows
the refractive indices extracted from the envelopes and fitted to the Sellmeier dispersion
model with two terms.
With the refractive index of the thin film corresponding to two adjacent maxima (or
minima) at points 1 and 2, given as n1 at 𝜆1 and n2 at 𝜆2 , the thickness can be easily
calculated from the basic interference equation of waves as follows:
𝜆 1 𝜆2
dcrude = (1.34)
2(𝜆1 n2 − 𝜆2 n1 )
where dcrude refers to the thickness obtained from the maxima (minima) at points 1, 2.
As other adjacent pairs of maxima or minima points are used, more thickness values can
be deduced, and hence an average value calculated. It is assumed the film has an ideal
uniform thickness.
The absorption coefficient 𝛼 can be obtained once x is extracted from the transmission
spectrum. This can be done as follows:
ln(x)
𝛼=− (1.35)
dave
20 1 Fundamental Optical Properties of Materials I
3.4
3.2
STRONG ABSORPTION REGION
3
n
TRANSPARENT REGION
2.8
2.6
2.4
ABSORPTION REGION
2.2
2
600 800 1000 1200 1400 1600 1800 2000
λ in nm
Figure 1.8 Determination of the refractive index from the transmission spectrum maxima and minima
shown in Figure 1.7. The solid black curve shows the fitted Sellmeier n vs. 𝜆 curve, which follows
n2 = 3.096 + 2.943𝜆2 /[𝜆2 − (402.31)2 ], where 𝜆 is in nm.
√
2
EM − EM −(n2 −1)3 (n2 −s4 ) 2
where x = (n−1)3 (n−s2 )
; EM = 8n
TM
s
+ (n2 − 1)(n2 − s2 ); and dave is the average
thickness of dcrude .
The accuracy of the thickness, the refractive index, and the absorption coefficient can
all be further improved in the following manner. The first step is to determine a new
set of interference orders, represented by m′ , for the interference fringes from the basic
interference equation of waves; that is,
2ne dave
m′ = , (1.36a)
𝜆e
where ne and 𝜆e are values taken at any extreme point, and m′ is an integer if the extremes
taken are maxima or a half-integer if the extremes taken are minima.
The second step is to get a new corresponding set of thickness values, d′ , from this
new set of order numbers m′ , by rearranging Eq. (1.36a) as:
m′ 𝜆e
d′ = (1.36b)
2ne
From this new set of thickness values, d′ , a new average thickness, dnew , must be cal-
culated before it can be applied to improve the refractive index. This can be done by
1.4 The Swanepoel Technique: Measurement of n and α for Thin Films on Substrates 21
ignoring those d′ that have values very different from the rest during averaging. With
this new average thickness, a more accurate refractive index ne can be obtained from
the same equation,
m′ 𝜆 e
ne = (1.36c)
2dnew
This new refractive index can then be fitted to the previous dispersion model again,
so that an improved absorption coefficient 𝛼 can be calculated from Eq. (1.35). All these
parameters can then be used in Eq. (1.30) to regenerate a calculated transmission spec-
trum T cal (𝜆), so that the root mean square error (RMSE) can be determined from the
experimental spectrum T exp . The RMSE is calculated as follows:
√
√ q
√∑
√ (T − T )2
√ exp cal
√ i=1
RMSE = , (1.37)
q
where T exp is the transmittance of the experimental or measured spectrum, T cal is the
transmittance of the regenerated spectrum obtained through the Swanepoel calcula-
tion method, and q is the range of the measurement. Figure 1.9 shows the regenerated
transmission spectrum of the a-Se thin film that appeared in Figure 1.6 using the optical
constants calculated from the envelopes (as quoted in the caption of Figure 1.8).
Full Spectrum of the a-Se Film in Figure 1.6 by the Swanepoel Method
1
0.9
0.8
STRONG ABSORPTION REGION
0.7
TRANSPARENT REGION
0.6
Transmittance
0.4
0.3
ABSORPTION REGION
0.2
Expt data
0.1 Regenerated Spectrum by Sellmeier Fitted n
Substrate
0
600 800 1000 1200 1400 1600 1800 2000
λ in nm
Glass
substrate
α=0
Refractive index = s
T
Detector
1.4 The Swanepoel Technique: Measurement of n and α for Thin Films on Substrates 23
3.6
3.4
3.2
STRONG ABSORPTION REGION
3
n
2.8
2.6
ABSORPTION REGION
2.4 n(λ) = 2.587 + (2.461 × 10–8 )λ–1 + (2.876 × 10–13)λ–2
2.2
2
600 800 1000 1200 1400 1600 1800 2000
λ in nm
Figure 1.11 The refractive index of a sample with d = 1 μm and Δd = 30 nm, and n fitted to a Cauchy
equation in the figure. Eqs. (1.40a) and (1.40b) were used for the determination of n.
24 1 Fundamental Optical Properties of Materials I
extrapolation to shorter wavelengths. The thickness is calculated from any two adjacent
maxima (or minima) using Eq. (1.34), and the absorption coefficient can be calculated
from
ln(xweak )
𝛼weak = − (1.41)
d
where 𝛼 weak is the absorption coefficient in the weak and medium absorption region;
xweak is the absorbance-like parameter (x) obtained from Eqs. (1.40a) and (1.40b); and d,
as before, is the average thickness.
According to Swanepoel, in the region of strong absorption, the interference fringes
are smaller, and the spectrum approaches the interference-free transmission sooner.
Since the transmission spectra in this region are the same for any film with the same
average thickness, regardless of its uniformity, the absorption coefficient in the strong
absorption region will thus be,
ln(xstrong )
𝛼strong = − (1.42)
d
√
A− (A2 −4Ti2 BD) 2T T
where xstrong = 2Ti D
, Ti = T M+Tm , and T M and T m are the envelopes of maxima
M m
and minima, respectively, constructed from the measured spectrum.
The accuracy of the thickness and refractive index can be further improved in exactly
the same way as that for a film with uniform thickness for the computation of the new
absorption coefficient, using Eqs. (1.40a) and (1.40b). Figure 1.12 shows the regenerated
0.9
0.8
STRONG ABSORPTION REGION
0.7
0.6
Transmittance
0.5
RMSE = 0.25%
0.4
ABSORPTION REGION
0.3
0.2
Expt data
0.1 Regenerated T
Substrate
0
600 800 1000 1200 1400 1600 1800 2000
λ in nm
Figure 1.12 A regenerated transmission spectrum of a sample with an average thickness of 1 μm and
average Δd of 30 nm, and a refractive index fitted to a Cauchy equation in Figure 1.11.
1.5 Transmittance and Reflectance of a Partially Transparent Plate 25
transmission spectrum of a simulated sample with nonuniform thickness using the opti-
cal constants calculated from the envelopes. Marquez et al. [102] have discussed the
application of Swanepoel technique to wedge-shaped As2 S3 thin film and made use
of the fact that a non-uniform wedge-shaped thin film has a compressed transmission
spectrum. Figure 1.13 shows a flow chart that highlights the various steps involved in
the extraction of the optical coefficients of thin film for both uniform and a nonuniform
film thicknesses.
Various computer algorithms based on the Swanepoel technique are available in the
literature [103]. Further discussions and enhancements are also available [97, 104–106].
For example, one improvement in the strong absorption region is based on a so-called
tangencypoint method as described in [106]. There are numerous useful applications of
the Swanepoel technique for extracting the optical constants of thin films; some selected
recent examples are given in [107–118].
(n − no )2
Rplate = (1.45)
n2 + n2o
If the plate is partially transparent with some attenuation coefficient 𝛼, then, each time
light traverses the thickness L of the plate, it experiences an attenuation factor exp(−𝛼L),
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A. D. 1897 (Zanzibar).
Abolition of slavery.
AFRICA: A. D. 1899.
Railway development.
"Article I.
From the coming into force of the present Convention, the
import duty on spirituous liquors, as that duty is regulated
by the General Act of Brussels, shall be raised throughout the
zone where there does not exist the system of total
prohibition provided by Article XCI, of the said General Act,
to the rate of 70 fr. the hectolitre at 50 degrees centigrade,
for a period of six years. It may, exceptionally, be at the
rate of 60 fr. only the hectolitre at 50 degrees centigrade in
the Colony of Togo and in that of Dahomey. The import duty
shall be augmented proportionally for each degree above 50
degrees centigrade; It may be diminished proportionally for
each degree below 50 degrees centigrade. At the end of the
above-mentioned period of six years, the import duty shall be
submitted to revision, taking as a basis the results produced
by the preceding rate. The Powers retain the right of
maintaining and increasing the duty beyond the minimum fixed
by the present Article in the regions where they now possess
that right.
Article II.
In accordance with Article XCIII of the General Act of
Brussels, distilled drinks made in the regions mentioned in
Article XCII of the said General Act, and intended for
consumption, shall pay an excise duty. This excise duty, the
collection of which the Powers undertake to insure as far as
possible, shall not be lower than the minimum import duty
fixed by Article I. of the present Convention.
Article III.
It is understood that the Powers who signed the General Act of
Brussels, or who have acceded to it, and who are not
represented at the present Conference, preserve the right of
acceding to the present Convention."
AFRICA: A. D. 1899.
Progress of the Telegraph line from the Cape to Cairo.
AFRICA: A. D. 1899-1900.
Summary of the partition of the Continent.
"Seven European nations, as before remarked, now control
territories in Africa, two of them having areas equal in each
case to about the entire land area of the United States, while
a few small territories remain as independent States.
Beginning at the northeast, Egypt and Tripoli are nominally at
least tributaries of Turkey, though the Egyptian Government,
which was given large latitude by that of Turkey, has of late
years formed such relations with Great Britain that, in
financial matters at least, her guidance is recognized; next
west, Algeria, French; then Morocco on the extreme northwest,
an independent Government and an absolute despotism; next on
the south, Spain's territory of Rio de Oro; then the Senegal
territories, belonging to the French, and connecting through
the desert of Sahara with her Algeria; then a group of small
divisions controlled by England, along the Gulf of Guinea;
then Liberia, the black Republic; Togoland, controlled by the
Germans; Dahomey, a French protectorate; the Niger territory,
one-third the size of the United States, controlled by
England; Kamerun, controlled by Germany; French Kongo; then
the Kongo Free State, under the auspices of the King of
Belgium, and occupying the very heart of equatorial Africa;
then Portuguese Angola; next, German South west Africa; and
finally in the march down the Atlantic side, Cape Colony,
British.
{5}
Following up the eastern side comes the British colony of
Natal; then just inland from this the two Boer Republics, the
Orange Free State and the South African Republic, both of
which are entirely in the interior, without ocean frontage;
next, Portuguese Africa, and west of this the great territory
known as 'Rhodesia'; then German Africa, which extends almost
to the equator; north of these, British East Africa, fronting
on the Indian Ocean, and merging northwardly with the Egyptian
Sudan, which was recently recovered from the Mahdi by the joint
operation of British and Egyptian troops, and the British flag
placed side by side with that of Egypt; next north, upon the
coast, Italian territory and a small tract opposite the
entrance to the Red Sea controlled by England; and a few
hundred miles west of the entrance to the Red Sea, the
independent Kingdom of Abyssinia. This division of African
territory, nearly all of it made within the memory of the
present generation, forms the present political map of Africa.
With England and France controlling an area equal in each case
to that of the United States; Germany, a territory one-third
the size of the United States; Portugal, with an area somewhat
less; the Kongo Free State in the great equatorial basin, but
having a frontage upon the Atlantic with an area nearly
one-third that of the United States; Italy and Spain, each
with a comparatively small area of territory; Egypt, with
relations quite as much British as Turkish; Tripoli, Turkish,
and the five independent States of Morocco, Liberia,
Abyssinia, and the two Boer Republics—nothing remains
unclaimed, even in the desert wastes, while in the high
altitudes and subtropical climate of southeast Africa
civilization and progress are making rapid advancement."
United States Bureau of Statistics,
Monthly Summary, August, 1899.
POP.
TOTAL FOREIGN PER SQ.
AREA. POPULATION. POPULATION MILE IMPORTS.
EXPORTS.
French Africa. 3,028,000 28,155,000 922,000 9.3
$70,116,000 $69,354,000
British Africa. 2,761,000 35,160,000 455,000 12.8
131,398,000 131,835,000
Turkish Africa. 1,760,000 21,300,000 113,000 12.2
54,091,000 62,548,000
German Africa. 944,000 11,270,000 4,000 12.0
4,993,000 2,349,000
Belgian Africa. 900,000 30,000,000 2,000 33.3
4,522,000 3,309,000
Portuguese Africa. 790,000 8,059,000 3,000 10.2
11,863,000 6,730,000
Spanish Africa. 243,000 36,000 … 0.5
… …
Italian Africa. 188,000 850,000 … 4.5
… …
Independent States.
AFRIKANDER CONGRESS.
See (in this volume)
SOUTH AFRICA (Cape Colony): A. D. 1900 (DECEMBER).
AFRIKANDERS:
Joining the invading Boers.
AFRIKANDERS:
Opposition to the annexation of the Boer Republics.
{6}
ALABAMA: A. D. 1899.
Dispensary Laws.
ALASKA: A. D. 1898-1899.
Discovery of the Cape Nome gold mining region.
"The news of a rich strike at Nome worked its way up the Yukon
River during the winter, and as soon as the ice broke in June
a large crowd came down from Rampart City, followed by a
larger crowd from Dawson. The 'Yukoners,' as these people were
called, were already disgusted with the hardships,
disappointments, and Canadian misgovernment which they had met
with on the upper river. … Those to whom enough faith had been
given to go over to Cape Nome were disgusted and angered to
find that pretty much the whole district was already staked,
and that the claims taken were two or three times as large as
those commonly allowed on the upper river. Another grievance
was the great abuse of the power of attorney, by means of
which an immense number of claims had been taken up, so that
in many cases (according to common report) single individuals
held or controlled from 50 to 100 claims apiece. …
"A year ago [that is, in the winter of 1898-1899] a few Eskimo
huts and one or two sod houses of white men were the only
human habitations along 60 miles of the present Nome coast.
Last June [1899] a dozen or score of tents contained the whole
population. By October a town of 5,000 inhabitants fronting
the ocean was crowded for a mile or more along the beach.
Hundreds of galvanized-iron and wooden buildings were
irregularly scattered along two or three thoroughfares,
running parallel with the coast line. There is every
description of building, from the dens of the poor
prospectors, built of driftwood, canvas, and sod, to the large
companies' warehouses, stores, and the army barracks—a city,
as it were, sprung up in the night, built under the most
adverse circumstances on the barren seacoast, a coast without
harbor, all the supplies being landed through the surf. … The
country contributes nothing toward the support of the
population except a few fish and a limited supply of
driftwood.
{8}
ALASKA: A. D. 1900.
Civil Government.
ALASKA: A. D. 1900.
Exploration of Seward peninsula.
"III.
The line of demarcation between the possessions of the High
Contracting Parties upon the Coasts of the Continent and the
Islands of America to the North-West, shall be drawn in the
following manner: Commencing from the southernmost point of
the Island called Prince of Wales Island, which point lies in
the parallel of 54 degrees 40 minutes, North Latitude, and
between the 131st and 133d Degree of West Longitude (Meridian
of Greenwich), the said line shall ascend to the North along
the Channel called Portland Channel, as far as the Point of
the Continent where it strikes the 56th Degree of North
Latitude; from this last mentioned Point the line of
demarcation shall follow the summit of the mountains situated
parallel to the coast, as far as the point of intersection of
the 141st Degree of West Longitude (of the same meridian),
and, finally, from the said point of intersection, the said
Meridian Line of the 141st Degree, in its prolongation as far
as the Frozen Ocean, shall form the limit between the Russian
and British Possessions on the Continent of America to the
North West.
"IV.
With reference to the line of demarcation laid down in the
preceding Article, it is understood:
1st.
That the Island called Prince of Wales Island shall belong
wholly to Russia.
2d.
That wherever the summit of the mountains which extend in a
direction parallel to the Coast, from the 56th Degree of North
Latitude to the point of intersection of the 141st Degree of
West Longitude, shall prove to be at the distance of more than
ten marine leagues from the Ocean, the limit between the
British Possessions and the line of Coast which is to belong
to Russia, as above mentioned, shall be formed by a line
parallel to the windings of the Coast, and which shall never
exceed the distance of ten marine leagues therefrom."
Map of Alaska.
H. Townsend,
The Alaskan Boundary Question
(Fortnightly Review, September, 1899).
ALEXANDRIA:
Discovery of the Serapeion.
ALEXANDRIA:
Patriarchate re-established.
AMATONGALAND:
Annexed, with Zululand, to Natal.
AMERICA:
The Projected Intercontinental Railway.
AMERICA, Central.
AMERICAN ABORIGINES.