ASSMAt

La)Deziye the_expae33ion Foa den3ity of State8_

in Solid.

An& Ihe density of SBaBe3 Can be aepre3ended in

the foam ofPx) and PCE)
ese,
P(Kdk Hhe numbex oF 3tae3 betuween k
and Kidk_þex unit volume_ok matedial_
PCE)dE B Hhe pumbex of 3BaBe3 beBeen_E
and E+dE_Þea_umit volume_ot ntesiak_

Name-Kabul Kumasi Kol) DO-25544,Hage M0.-O1

Fox evexy value ot k

hese 3 avalue of E_
TE
2he Umbex oF States EtdE-
betueen_ kidk i be
aB 2Ame Q3 betugen EtdEL
1dk2K
So PEdE =P(Kdk
Nou aCcod0g to
Bloch'S theoaëm_

E-K diaxam
 c.lASSnAte
Ote

Paobabilty
We_knou aaB the pxobiity of Eindi-
elecBaan_i8_ 2

Nou Considex Semiconductod 03 3houon inh2

2
Electaon is in81de the
Zemiconductos not oltade_

Pxobability oF Findipa e
3ould bé zexoat he boundy

Name-Rabul Kurnax, Roll no-25544 Page no.- O2-

2t mearg the should_hoam_a a 2tandip2 L2Ve

9 So n thi3 CaBe_the_2tanding
boumdady Corndihon_ill_be
Qbplied
lhesefoxe 2K- N.27
Hexe k=ikzt iky+KKz
Nouo in all thxee dimen8ion8
2Kz=m2rky=lzim-1le)
2th=n.2xÀ N=Ylel na1
2kzlz=.2r K=2, let p=
hexe ,Dp,N ase integexS_
 cIASSMAte

Now in K 3p0ce any vakue

OF K_3 poiSible

but because ot Ztandipg uave

boundaay_Condition thebe_wil
be poative values only
The volume of one allowed
3take in K3pacce

Name-Rahd Kumax RollnD.-25544;Page no.-03

Volume_of (2 of 3phexe= 14kaK_x2-

TotalPHAAbex efstakes Total volume
3tate
one
Volurme OF
xrKdkx 2

Pk=7T d

knoua tHat_IE)dE =PCdk -

e
PCK
 CiASSMAtE
Date

Nou lxon_baxabolic appsoXimaion

E=Ec KE
2mC

on putin4 thia value in _e2)

2mc
( 2(2)

Name-Robl kumax: Rollpo.-2554: Ppge_n0- 04

2mC -
Nou Exom e" (),_
2mC
 lASSMAtE
--

e u he value_of KP20m e" ino eg"),

E-E2

his i8 the dexivation foX_den3ity of 2tate_

Name- Rahdl Kumax: Rallna-255 ; Page nn-05

DOSC VE

3.D density of 2taBe3 which axe Billed in_

Oodex o¥ incaea8ing eneay
 cIASSMALe

1.b)Whai_is the main ditfederce between metal3,

Semicanductoxá and inSulaBos8
Ang MeBals has_see electxo28. 1hey aae _uBed 23
ConduciOxof elecAxicity iHh inxeasig_ termpeatuae
Londucthvity decaee3e3 Melnl3 have 2exo eregy
90 t h e valemy band and Conduchon_bord
oveslab8 example-Aluminium, CobÞex, etc

Name-Rahul Kumaa, Rol) no-25544;4e no- 06

Semiconductos ho3 3orne_pecuileax chazacBedi3tic3_
Can ive electaícity coithout exteanal voltaje
Can amplify he Cusxent.Conduchvily incaeazas
ith incxeQ3É in temperatuge Semiconductoxs
have O.2 ko 2el eney gah a3 the valence
band andLonouckion bard axe 2epaxated
Exampleaaphitediamond,cabbon, Siliton.eic
Insulatox _ha3 no fxee electxona o Caxay electaicity
Uged topaotert kom 3hoxt Cixcuit ox electaic
2hock. Coduchvity does not charge
V
oih tempesatuxe
Tnulators have 6eV band aap "heteen valerre
band and Corduchionband example_plostic8.etc
 c.lASSMAte

Z Waite a Shot note on :

aIntinsic and extainsic Semiconducto
bDaift and dilfusion Cuaxernt
CMeBal semiconductor junchon (ohmic ond schottky)
Arg
aAn intainsic puze) Semiconducto , al3o Called an
undoped Semiconducto ox i-£ype Semiconductox
i 0 pue Bemiconaluctox coithout any 2ignilicant
olopant8pecies pxeaent The numher of "chaaae
COaiexs thexetoe deteamined hy the_bxopextie3
Name- Rahul Kumax ; Rollno.-25544; Pge M-02

ofthe maBeniak itself in3tead of he amount

impuaitie3. In intain8ic 3emiconductox3_He.
numbex oF excied elecBaona And he numbex
Of holes aae eual: n=p lhi3 nay be_the
CaSe even allex odlobin the Semiconducton,_
thxough_only iF it_3 doped with both _donoN8_
and acceptosá egually. Tn this Ca3en=p
2ill_bold8, and_the 3emicondluctox xemains
intxinBic , though dobed.example- Si, Gne etc
 CIASSMAte

Ap
An _extainSic Semiconduc tox i3_one tthat ha3
been dopedi duzirg rmanutEactuae of the emi-
Conductox Cay3Baka txace element ox chemical
Called 0 doping 0gent ha3 been icoap0xated_
Chemically mto he Cay3tal, Eos the puab03e of
ivingt_dilheaent electicak þxopexties than
he pude intain8ic) emiconduc toX An_an
eXtxinaic 3emiconductox i thele Foaeign
dlopant atom3 in the cay3Bal Lathice hat
Nome-Rahul kurma8 Roll no-25544 Page no- 0

mainlypovide he chaxe caxaiex8_ohicb

Casay_electaic Cuzaent thaoLgh the _CaysBal,
The dopin Qgents _uBed ad of tvo type8
euting_ in_Hoo tybes ot exhinsic 2emicondhictod
An elexon _don0 dopant i3 an_atom whiCh,
cwhen incodpoaated in the Cay3tal, xelea3e3
O mobile Conduchon eleCHxon into the cay3ta!_
Latice An exiuinBic 3ermiconductoa chich hes
been_doped coith electaon donoa Abm8
Called an_N-type 3emiconductoa, becalu3e
he majoaity C Chaage Caaaiesz in the cay3ta!_
Oxe ngakie elecxon3. An _electxon acceptox
dopantiB an atom wkich accept3 an
elecHxon taom helaice, Cxeating a_vacancy
 ASS MALE

ohese an electaon 3holuld be Calleda_hole

Cohich can move thxough the Cay2t0 Lke a
Positively chaxged badicleA_extainBiC 3emi-
Conductox ohich ha3 been_doped oith
elecBaonaccepBoxatom3 i3 called a p-ype.
2emiionductoa, because the maioxity of
chaxge caadiexs in the cay3B0 de poBitive
hole3.

Name-Rahil kumaxiRolnD.-25544; Pa4e no-09

Daift Cuaxernt
DaiEt_Cuaent Can be delined a3 he chaxge
Caaaiex'3 move3 in a 2emiconductox_becauze_
t h e electaioield. These aae tao Kind3 of
Choxge Casaiexs in a emiconduCtox Xike hales
Cmd electxon8 once the _voltgge i2 ablalied
fo a 2emiconductx,then elotaons m0ve
tauad he oslive #exminal of a bateày
hexea8 the holeß taavek. fQu2aKA_he
neative teminal of a bateay
bateay
Hexe,holea ade boäitively
chazged CaBsies3_ohezea3 the electxo3 aae
negatively chageod Cabaie3, hexeFoge,the
 ASSMAte

electon3 attaact by the þo3iive texminax

o a baHeay cohebea3 he_ holes OtaactE
bythe negaäve teaminak of a bateay
Dit tusion Cuaaen
The dittusion_Cusaent can_be _delned a3
the loo of Chaxge Casaie3 ithin a em
Conductos toavel3 Esom a highex_concentxation_a
epion to loue LoKentdation_begion A hghex_
Nane-Rahul kumax ; Roll0-25544, Page no-102

Loncentsaion aeion i3 nothing but hexe he

Duober of electxong_PreserB in the semicoducto
Similaalya louex Concenkaion aeion 2 here
the les8 numbex of eletxong_þNesent in
the BemiConduct0 lhe psoce, of ditk2ion
mainly OCCuS3 hen a 2emicomduc tod 2
dloped mon- unikoxmly.
Tn _an N-#ype 3emi-
LonductoK, Lhen_ i3 doped mon-unifaamly
hen a highes onentaation seion Can_be
Foanned aB the ek+ Side bexea8 the louEX
Cocentaationxegion Can be foxmed at the
xight Sidle lhe èlectxon3 in he bigbex
Cocentaationsegion_ase mose în the 3emi-
Conductod So they oill_expeaience a bepulsive2
Foace Exom each Othe
 clASSMAte
Dato
Pato.

CInSolid StaBe physic3, a melal-Semiconductox

(M-S) 4umcHion_ia a iypeo elecBaical junchon
in which a melal _come& in cla3e CortocA
oith 0_Bemiconductox_matesial gti3 the oldet
Pxachical Semiconductox device M-S umchians
Can_é_ethex be ecHfying_ox_non-_aechfying hee
kecHtyin4 metak-Bemicondictox iunehon foxm8 a
Schotky baxaiex, making a device kooLon_03 a
Schotky _diode,_tAhile the non- eciking uncHO_
isCálled an Obmic Cottact (In contxast,a_
SeCHilyingBemiconducHox-Lemiconducox junchion,
Nane-Rahul Kumad, Rollno-25544, Pa,ie DD.-11

the most Lommon jemiconductox device today

8 Kncuon_08 ab-n junction)
MeBak-2emicondluctoa
unction8 ade_CauCiak o the opRDldion_of al1
gemiconoluctox_device2. Bually an ohmic Contact
is desixe, 20 that eleciilól chaxge Can be
Conduched easily beBuneen the ache xegion oF
a taansi3tox ond he ezexnal cizcuitay
Occasionally hooevex a SChotKy bAbaiéx i3
usetul, 0 in 2chotky oiodel Schotky taanzishxs
and metok-Eemicodúctox lield effec txa123i3to2.