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Digital Thermometer Design with OrCad Simulation And full report with
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Article · February 2014

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 BIRZEIT UNIVERSITY

Electrical Engineering Department

ENEE 338

ELECTRONICS 2

Project II

Digital thermometer

Student’s Name.: Amr H. Rimawi Student’s No.: 1111376

Student’s Name.: Samer Mukhaimar Student’s No.: 1110727

Student’s Name.: Abdallah Al-tartir Student’s No.: 1110408

Instructor.: Dr.Mohammad Alju'bh Section No.: (“ 1 “)

 The Aim Of the Project :
 Team Work
 to earn a practical knowledge
 to Construct the Circuit that Give us the temperature

the Method Used :

by connecting the circuit on Board with its elements
and three Voltage Dc Sources were needed
5 Volt as input Voltage
-15, 15 volt to Bias the Op Amps

the Component used :

 Resistors
 Op-Amp's
 Bipolar transistor
 Wires
 board
 Dc Power supply

Introduction :

The Circuit of the Project was Done ( digital thermometer ) such that provides an output a
voltage proportional to the temperature .
It Gives an Output voltage of 10 mV Per degree centigrade, when the temperature changes
the Voltage across the Sensor ( transistor in our case ) will change since the transistor in the
diode connection Mode so VBE Changes according the changing of the temperature , when VBE
the output Voltage will change also linearly with the temperature Immediately
 Closer Look to the Circuit :

when the temperature

changes the base to
emitter voltage will
change in the transistor
and when VBE change V(-)
will change since the Op-
Amp 1 are ideal ( there is
a negative feed Back) so

as VBE Changes the output

voltage Vop(1) will change
depending on the value of
temperature since VBE is changes with temperature
And the Op(2)Is a non Inverting Amplifier to amplify the input signal and To make the ratio
at 100 (C) = 1 (Volts)

NPN medium power transistor

the Component Used in the Circuit :

 operational Amplifier (ua741) :

The µA741 is a
general-purpose
operational
amplifier featuring
offset-voltage null
capability The high
common-mode
input voltage range
and the absence of
latch-up make the
amplifier ideal for
voltage-follower applications. The
device is short-circuit protected
and the internal frequency
compensation ensures stability
without external components. A
low value potentiometer may be
connected between the offset null
inputs to null out the offset
voltage

The high common-mode input

voltage range and the absence of
latch-up make the amplifier ideal
for voltage-follower applications.
The device is
short-circuit protected and the
internal frequency compensation
ensures stability without external
components. A low value
potentiometer may be
connected between the offset null
inputs to null out the offset
voltage(it operates in the Linear
region)

 the Resistors :

the Resistors used for many reasons :

1. Amplification In opAmp .
2. Protection
3. Limit the Current
  The transistor :
NPN power transistor , In our Project 2N3019
Power transistor was used ,its features
high current 1A And 80 Volts its application As
Amplifier and Switching Circuit

At Zero Celsius VBE =595.055mV

At 100 Celsius VBE =377.104mV
the 2N3019 transistor used as Sensor of
temperature

we used A power transistor for Measuring a

better value and a Large range of temperature
the 2N3019 transistor Operating and
Storage Junction
Temperature Range (-60 to 200 C)

(The Project Done to operate as ):

 LM35DZ:
The LM35 series are precision integrated-circuit temperature sensors, with an output
voltage linearly proportional to the Centigrade temperature. Thus the LM35 has an advantage
over linear temperature sensors calibrated in ° Kelvin, as the user is not required to subtract a
large constant voltage from the output to obtain convenient Centigrade scaling. The LM35 does
not require any external calibration or trimming to provide typical accuracies of ±¼°C at room
temperature and ±¾°C over a full −55°C to +150°C temperature range. Low cost is assured by
trimming and calibration at the wafer level. The low output impedance, linear output, and
precise inherent calibration of the LM35 make interfacing to readout or control circuitry
especially easy. The device is used with single power supplies, or with plus and minus supplies.
As the LM35 draws only 60 µA from the supply, it has very low self-heating of less than 0.1°C in
still air. The LM35 is rated to operate over a −55°C to +150°C temperature range, while the
LM35C is rated for a −40°C to +110°C range
 Comparison : (the Project Vs LM35DZ)
Our project was Bigger according to the Volume Because was Used Op-Amps and LM35DZ is an
Integrated Circuit IC, But Our Project was More effective according of the Rated Temperature

a power transistor used 2N3019 rated temperature (-60°C to 200 °C)

And the IC (LM35DZ) (−55°C to +150°C)

and the same result was got from the Both .

the Design:
The value per each Resistors were found Below
 Calculation :

Let

Let
Let

The simulation :
Temperature Sweep

the relationship is Linear As shown below

 Conclusion :

The Digital thermometer Was Worked Correctly , moreover many knowledge were earn , and
team Work , and the temperature changes linearly with the VBE of the transistor And the
Output voltage was Proportional to VBE

List of References :
 http://www.ti.com/product/lm35
 http://www.ti.com/lit/ds/symlink/lm35.pdf
 http://products.semelab-tt.com/pdf/bipolar/2N3019.pdf
 http://www.cdil.com/datasheets/2n3019_.pdf
 http://www.alldatasheet.com/datasheet-pdf/pdf/15073/PHILIPS/2N3019.html
 http://www.technologystudent.com/elec1/opamp1.htm
 http://www.futurlec.com/Transistors/2N3019.shtml
 http://www.tarteksystems.com/index.php?main_page=index&cPath=1_3_4

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