EE231L ELECTRONICS-I LAB (Spring 2010)

FINAL EXAM (12th May, 2010)

Name: _______________________ Reg# ___________________

Note: All questions are compulsory to attend. Correct answer carries 3 marks, wrong carries -1
mark. Un-attempted questions will be counted as wrong answers. No question will be
entertained during the exam. Time allowed: 30 minutes.

1. For proper biasing of p-n-p bipolar g) Voltage-Divider

junction transistor, the base-emitter
junction should always?
a) Not be connected to any
power supply
b) Be emitter-feedback
c) Be forward biased
d) Be reverse biased
h) Collector-Feedback
For questions 5-10, consider the following
voltage-divider biasing circuit of BJT with
the condition that β R E >10 R2to be valid in the
circuit for all questions.

2. For proper biasing of n-p-n bipolar

junction transistor, the collector-base
junction should always?

e) Not be connected to any

power supply
f) Be collector-feedback
g) Be forward biased
h) Be reverse biased

3. Which of the following biasing

circuit of BJT has the highest value
of stability factor?
5. The voltage at the node B is
a) Fixed-Biased
b) Emitter-Biased a) Constant and equal to voltage
c) Voltage-Divider across R2
d) Collector-Feedback b) Can be replaced by
equivalent Thevinin voltage
4. Which of the following biasing and resistance
circuits of BJT is most stable to c) Equal to the saturation
environmental effects in I c? voltage of BJT
d) Equal to V CE
e) Fixed-Biased
f) Emitter-Biased
6. What is the equivalent resistance c) Value of stability factor is
between nodes B & A increased due to changes in β
d) None of above
a) R1∨¿ R2
b) R E + R2 For questions 11-13, consider the following
c) R2 BJT circuit
d) RE

7. If little increases occurs in I c due to

environmental and not in all other
components in the circuit, then

a) I bwill increase
b) I b will dercease
c) V BE will increase 11. What is the value of V ❑
d) V B will be changed
a) 0V
b) V BE
8. Considering that V CC =15 V , the
c) V BC
relationship between the resistances
d) None of above
R1∧R 2 is given as

12. What is the value of V CE

a) R1=R 2
b) R1=0.5 R 2
a) 0V
c) R1=2.7 R 2
b) βV
d) R1=5.9 R2 βV BE
c)
d) None of above
9. Considering that V CC =15 V , the
relationship between currents I 1∧I 2 13. The BJT is in
is given as
a) Cut-off mode
a) I 1=I 2 b) Active mode
b) I 1=0.5 I 2 c) Saturation mode
c) I 1=2.7 I 2 d) None of above
d) I 1=5.9 I 2

10. If( R1∨¿ R 2)/ β R E ≪1 , then which

one of the statements are true

a) Changes in I c are directly

proportional to change in β For questions 14-17, consider the following
b) Value of stability factor is circuit of diodes, all diodes of Silicon, with
increased due to changes in β Zener diode of 20V Zener voltage.
 For questions 18-20, consider the following
circuit of diodes, all diodes of Silicon.

14. V1 =

a) 0V
b) 10 V 18. For Vi = +20V, the value of voltages
c) 19.3 V at nodes B & C are, respectively
d) 20 V
a) 1.4 V
15. Voltage between the nodes A & B is b) 7.3 V
c) 9.3 V
a) 1.4 V d) 11.3 V
b) 10 V
c) 18.6 V 19. For Vi = +20V, the value of voltage
d) 20 V between nodes B & C is

16. CurrentI(1) = a) 1.4 V

b) 7.3 V
a) 0 mA c) 9.3 V
b) 4 mA d) 11.3 V
c) 3 mA
d) 2 mA 20. For Vi = -20V, the value of voltages
at nodes B & C are, respectively
17. CurrentI(2) =
a) 11.3 V
a) 0 mA b) 1.4 V
b) 4 mA c) 7.3 V
c) 3 mA d) 9.3 V
d) 2 mA

In questions 21-25, produce the output voltage reading for each of the given set of voltages at
input nodes A, B, C, and D in the following circuit of diodes. Consider all diodes as Silicon
diodes.
 Q# A (volts) B (volts) C (volts) D (volts) Vo (volts)
21 5 0 5 0
22 5 0 5 5
23 0 5 0 5
24 0 5 0 0
25 0 0 0 5

26. Zener diodes are used for conduction in the reversed biased region. Consider a Zener
diode of zener voltage Vz. Draw an equivalent circuit of a Zener diode using power
supplies and diodes only used for forward biased region.