1

SEMICONDUCTORS
(i) −10 V, −5 V
Single Answer Correct (ii) −5 V, −10 V
1. In semiconductor the concentrations of electrons (iii) −4 V, −12 V
and holes are 8 × 1018 /m3 and 5 × 1018 /m3 (a) (i) < (ii) < (iii) (b) (iii) < (ii) < (i)
respectively. If the mobilities of electrons and (c) (ii) = (iii) < (i) (c) (i) = (iii) < (ii)
hole are 2.3 m2 / volt-sec and 0.01 m2 / volt-sec
5. If in a p-n junction diode, a square input signal of
respectively, then semiconductor is -
(a) N-type and its resistivity is 0.34 ohm-metre 10 V is applied as shown Then the output signal
(b) P-type and its resistivity is 0.034 ohm-metre across R L will be
(c) N-type and its resistivity is 0.034ohm-metre
(d) P-type and its resistivity is 3.40 ohm-metre

2. A potential difference of 2 V is applied betwee 𝑛

the opposite faces of a Ge crystal plate of area 1
(a) (b)
cm2 and thickness 0.5 mm. If the concentration
of electrons in Ge is 2 × 1019 /m3 and mobilities
m2
of electrons and holes are 0.36 and 0.14
volt-sec
m2
respectively, then the current flowing
volt −sec
through the plate will be -
(a) 0.25 A (b) 0.45 A (c) (d)
(c) 0.56 A (d) 0.64 A

3. The band diagrams of three semiconductors are

given in the figure. From left to right they are
respectively.

6. For transistor action:

(i) Base, emitter and collector regions should have
similar size and doping concentration
(a) n-intrinsic-p (b) p −-intrinsic-n (ii) the base region must be very thin and lightly
(c) intrinsic-p-n (d) intrinsic-n-p doped
(iii) the emitter - base junction is forward biased
4. In the following circuits PN-junction diodes and base - collector junction is reverse biased
𝐷1 , 𝐷2 and 𝐷3 are ideal for the following potential (iv) both the emitter - base junction as well as the
of A and B, the correct increasing order of base - collector junction are forward biased
resistance between A and B will be - Which of the following pairs of statements is
correct?
(a) (iv), (i) (b) (i), (ii)
(c) (ii), (iii) (d) (iii), (iv)

7. A transistor is operated in common emitter

configuration at constant collector voltage VC =
1.5 V such that a change in the base current from
 2

100𝜇 A to 150𝜇A produces a change in the (a) 0 (d) None

collector current from 5 mA to 10 mA. The
current gain 𝛽 is: 11. Determine current 𝐼 in the configuration-
(a) 50 (b) 67
(c) 75 (d) 100

8. In the circuit shown in fig, the current gain 𝛽 =

100, for the transistor. What would be the bias
resistance R B so that VCE = 5 V ?(Neglect VBE ) (a) 1amp (b) 0 amp
(c) less than 1amp (d) None

12. In the given circuit VO1 & VO2 are-

(a) 11.3 V&0.3 V (b) 0.3 V&11.3 V

(a) 2 × 103 Ω (b) 2 × 105 Ω
(c) 1 × 106 Ω (d) 500Ω
9. Two identical capacitors A and B are charged to
the same potential V and are connected in two
circuits at 𝑡 = 0 as shown in figure. The charge of
the capacitors at a time t = CR are respectively-
(c) 11.3 V&11.3 V (d) 0.3 V&0.3 V
13. The diode used in the circuit shown in the figure
has a constant voltage drop of 0.5 V at all currents
and a maximum power rating of 100 milliwatts.
What should be the value of the resistor 𝑅,
connected in series with the diode for obtaining
maximum current -

(a) VC, VC (b) VC/e, VC (a) 1.5Ω (b) 5Ω

(c) VC, VC/e (d) VC/e, VC/e (c) 6.67Ω (d) 200Ω
10. In the circuit shown in figure, Voltage 𝑉0 is- 14. When a p − n junction is reverse-biased, the
current becomes almost constnat at 25𝜇A. When
it is forward-biased at 200mV, a current of 75𝜇A
is obtained. Find the magnitude of diffusion
current when the diode is
(A) unbiased
(B) reverse-biased at 200mV and
(C) forward-biased at 200mV
(a) 50𝜇A, 𝑍 Zero, 100𝜇A
(b) 25𝜇A, 𝑍 Zero, 100𝜇A
(a) 11.7 volt (b) 11.3 volt
 3

(c) 25𝜇A, 10𝜇A, 100𝜇A

(d) 25𝜇A, 10𝜇A, Zero

15. The current flow through the resitance in the

given circuit is
(a) 2.2 mA (b) 3.2 mA
(c) 2.4 mA (d) 3 mA
(a) The top surface of cube will become
negatively charged
(b) The front surface of the cube will become
positively charged
(c) The front surface of the cube will become
negatively charged
(d) Both top and front surface of cube will become
16. A sinusoidal voltage of peak value 200 volt is positively charged
connected to a diode and resistor R in the circuit
shown so that half wave rectification occurs. If the 19. A working transistor with its three legs marked 𝑃,
forward resistance of the diode is negligible Q and R is tested using a multimeter. No
compared to R then rms voltage (in volt) across R conduction is found between P and Q. By
is approximately - connecting the common (negative) terminal of the
multimeter to R and the other (positive) terminal
to P or Q, some resistance is seen on the
multimeter. Which of following is true for the
transistor?
(a) It is a pnp transistor with R as collector
(a) 200 (b) 100
200 (b) It is a pnp transistor with R as emitter
(c) (d) 280 (c) It is an npn transistor with R as collector
√2
(d) It is an npn transistor with R as base
17. The output current versus time curve of a rectifier
is shown in the figure. The average value of the 20. In the figure shown, the currents through the zener
output current in this case is - diode and load resistance are respectively

(a) 0 (b) i0 /𝜋
(c) 2i0 /𝜋 (d) 𝑖0 (a) 2 mA, 6 mA (b) 4 mA, 2 mA
(c) 6 mA, 4 mA (d) 2 mA, 8 mA
18. A cube of germanium is placed between the poles
of a magnet and a voltage is applied across 21. I. In a P-N-P type common base amplifier the
opposite faces of the cube as shown in Figure. input and output are in same phase.
Magnetic field is directed vertical downward in II. In a P-N-P common base amplifier input and
the plane of the paper : output are out of phase.
What effect will occur at the surface of the cube? III. In a N-P-N- common base amplifier the input
and output are in same phase.
 4

IV. In a N-P-N common base amplifier input and (a) 0.2eV, 0.1eV, 0.3eV
output are out of phase. (b) 0.1eV, 0.2eV, 0.3eV
State if - (c) 0.1eV, 0.1eV, 0.3eV
(a) I and III are correct (d) 0.3eV, 0.1eV, 0.2eV
(b) II and III are correct
(c) I and IV are correct 26. In a given circuit as shown the two input
(d) II and IV are correct waveform A and B are applied simultaneously.
The resultant waveform Y is
22. The equivalent resistance between 𝐴 and 𝐵 is

(a) 36Ω if VA > VB

(b) 18Ω if VA < VB (a) (b)
(c) Zero if VA < VB and 54Ω if VA > VB
(d) Zero if VA > VB and 34Ω if VA < VB

23. The current flow through the resistence in the

given circuit is
(c) (d)

27. The combination of gates shown below produces

(a) 4.85 mA (b) 5 mA
(c) 5.8 mA (d) 4.65 mA

24. In a p − n junction, a potential barrier of 250meV

exists across the junction. A hole with a kinetic
energy of 300meV approaches the junction. Find
the kinetic energy of the hole when it crosses the
junction if the hole approached the junction from (a) AND gate (b) XOR gate
the n - side (c) NOR gate (d) NAND gate
(a) 500meV (b) 550meV
(c) 500meV (d) 550meV 28. Which of the following represent correctly the
truth table in of the configuration
25. The potential barrier existing across an unbiased
𝑝 − n junction is 0.2 volt. What minium kinetic
energy a hole should have to diffuse from the p -
side to the n - side if
(A) the junction is unbiased,
(B) the junction is forward-biased at 0.1 volt and
(C) the junction is reverse-biased at 0.1 volt?
 5

(a) (b) Paragraph (Q. 1-3) :

Fig. shows an n − p − n transistor connected to
two resistors R B and R C and a battery VCC ⋅ IB and
IC are the base and collector currents where IB <
< IC and IC /IB = 𝛽 (current gain of a transistor
in CE configuration). Use this description to
answer the following three questions. Take
(c) (d)
VCC = 10 V, R B = 100kΩ, R C = 500Ω, 𝛽 = 100,
VBE → 0.

29. The Boolean expression for the output 𝑓 of the

combination of logic gates shown in fig. is

(a) 𝐴 ⋅ 𝐵 + 𝐴‾ ⋅ 𝐵‾ (b) 𝐴. . 𝐵‾ + 𝐴‾ ⋅ 𝐵
(c) 𝐴 + 𝐵. . 𝐴‾ + 𝐵‾ (d) A + B
1. The base current (IB ) is:
30. In the circuit below, A and B represent two inputs (a) 8𝜇A (b) 18 mA
and C represents the output. (c) 66.5𝜇A (d) 8 mA

2. The emitter current (IE ) is approximately:

(a) 6.7 mA (b) 18 mA
(c) 8 mA (d) 8𝜇A

3. The collector voltage (VC ) is:

(a) 18 V (b) 10 V
The circuit represents (c) 1.8 V (d) 6.67 V
(a) AND gate (b) NAND gate
(c) OR gate (d) NOR gate

31. In the given Boolean expression, 𝑌 = 𝐴 ⋅ 𝐵‾ + 𝐵 ⋅

𝐴‾, if A = 1, B = 1 then Y will be
(a) 0 (b) 1
(c) 11 (d) 10

Multiple Answer Correct
1. Fig. shows the transfer characteristics of a base
biased CE transistor. Which of the following
statements are true?
(a) At Vi = 0.4 V, transistor in active state.
(b) At Vi = 1 V, it can be used as an amplifier
(c) At Vi = 0.5 V, it can be used as a switch turned
of.
(d) At Vi = 2.5 V, it can be used as a switch turned
on.
6
Subjective Questions
1. The number of silicon atoms per m3 is 5 × 1028 .
This is doped simultaneously with 5 × 1022
atoms per m3 of Arsenic and 5 × 1020 per m3
atoms of Indium. Calculate the number of
electrons and holes. Given that 𝑛i = 1.5 ×
1016 m−3 . Is the material n-type or p-type?
2. For the circuit shown in Fig. find
(1) the output voltage;
(2) the voltage drop across series resistance;
(3) the current through Zener diode.
3. In the circuit shown in fig. when the input voltage
(𝑉𝑖 ) of the base resistance is 10 V, Vbe is zero and
𝑉𝑐𝑒 is also zero. Find the values of 𝐼𝑏 , 𝐼𝑐 and 𝛽.
 7

ANSWERS
Single Answer Correct
1. (a) 2. (d) 3. (a) 4. (c) 5. (d) 6. (c) 7. (d) 8. (b)
9. (b) 10. (a) 11. (a) 12. (a) 13. (b) 14. (b) 15. (a) 16. (b)
17. (a) 18. (b) 19. (d) 20. (b) 21. (a) 22. (d) 23. (a) 24. (b)
25. (a) 26. () 27. (d) 28. (b) 29. (d) 30. (c) 31. (a)

Paragraph
1. (c) 2. (a) 3. (d)

Multiple Answer Correct

1. (b, c, d)

Subjective Questions
1. 4.99 × 1022 , n-type semiconductor.
2. (1) 50 V (2) 70 V. (3) 9 mA
3. 𝐼𝑏 = 25𝜇𝐴𝐼𝑐 = 3.33𝑚𝐴 𝛽 = 133.