Microfabrication of Piezoelectric MEMS

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Microfabrication of Piezoelectric MEMS
Chapter in Journal of Electroceramics · January 2005

DOI: 10.1007/0-387-23319-9_13
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Microfabrication of piezoelectric
MEMS
1st International Workshop on Smart
Materials and Structures
7-8 October, 2004
Kiel, Germany
Jacek BABOROWSKI
RF & Piezoelectric Components Group

CSEM SA, Neuchâtel, Switzerland
jacek.baborowski@csem.ch
6 April 2004 1
Kiel, 8 October 2004, jba
csem
Swiss Center of Electronics
and Microtechnologie
Microelectronics Division
RF & PIEZO
COMPONENTS GROUP
2
6 April 2004 ISIF 2004 jb INVITED TALK 2
Kiel, 7. Oktober 2004, jba
csem
Swiss Center for Electronics and Microtechnology
41%
45%
Privately owned company with ~ 70
Shareholders, none profit
14%
Long term contract with the Swiss Government Contract Public Projects Industrial Income
Government for financing applied research
2003 :
Turnover ~ 54 MCHF, employees ~ 290
+ SPINN-OFFS
Core technologies: Micro- and Nano- RF & PIEZO

technologies and System Engineering COMPONENTS
GROUP
M.A.Dubois et al.
3
FACILITIES at EPFL
CENTER OF MICRO- and

NANOTECHNOLOGY
CERAMIC LABORATORY
(Prof. N.Setter Lab.)
4
From materials… to sensors…
Reproducible and industrially exploitable microfabrication
technology for piezoelectric MEMS based on PZT and AlN thin films
By understanding the By demonstrating the
basic principles microfabrication of
of piezoelectric device prototypes: acoustic
physics sensor, ultrasonic
transducer
By the development of
dedicated
micromachining method By integration of high
for AlN, PZT, Pt in performance piezoelectric
combinaison with deep films
• {100} PZT 53/47, e31,f = -12 C/m2, {111}
silicon etching of SOI • AlN, e31,f = -1.02 C/m2 , d33,f = 5.3 pm/V .
substrates
5
Today's challenges in piezoelectric MEMS
• Deposition and integration of high performance (e.g.high e31,f value)
piezoelectric films on a wafer scale with thickness up to 10 µm.
• Establishment of reliable microfabrication processes (mostly “dry” plasma

etching methods) to produce complex piezo MEMS with submicron resolution.
• Demonstration of new applications

Microfabrication and
Pb2+ N characterization of demonstrators
O2- top electrode
c
piezoelectric thin film
Zr4+, Ti4+ Al
Q3, E3
bottom electrode
a
External load
Si structure
or displacement
strain ε1
z, 3
Integration, processing,
y, 2
properties
x, 1
Dedicated microfabrication methods, process flow
6
Outline:
Introduction
1. Overview of piezoelectric devices
2. General Processing Issues
3. Examples
• Vibrating membranes and thin
plates (MUT, pressure sensors)
• Cantilevers and Beams
• RF MEMS
Outlook and Conclusions
Goal:
• Present the existing devices
• Comparison with our actual processing developments
• Highlight the common problems and limitations
7
Overview of piezoelectric devices
Piezoelectric thin films in MEMS
Micromachined flextensional actuators and transducers
Plate waves, SAW Standing Waves

Flexural plate waves in membranes (Lamb • Micromachined Ultrasonic Transducers:
waves) (Uozumi, Ohsone, White, 1983, ZnO) Bernstein, Cross 1997, PZT
Percin, Khuri-Yakub, 1998, ZnO
Signal, particle filtering, chemical sensors,
Baborowski, Muralt, 2002, PZT
fluidic systems (Lugienbühl, 1997 PZT)
Akasheh, 2004, PZT
Ultrasonic micromotors for watches, • Droplet Ejector Percin, 2001 ZnO
(Udayakumar 1991 PZT, Flynn et al 1992 PZT, Racine
• Intelligent can, Yamashita, 2002, PZT
et al 1994 ZnO, Muralt et al 1995 PZT)
• Array microjet, Yuan, 2003, PZT
• Microdegasing, Maeda 2001, bulk PZT.
Linear actuators
Piezoelectric laminated cantilevers, AFM, surgery tools, optical phase shifters, relays,
microvalves, pumps, micromirrors, switches .
Schiller and Polla (1991)
Lee, Itoh, Suga (1996)
Nippon Denso,Y. Ohtuka, (1995)
Chengkuo Lee, et al, (1996~1997)
J. Tsaur et al, AIST, Tsukuba, (2002) etc..
8
Plate and Standing waves
Flexural plate waves in membranes (Lamb waves) (Uozumi, Ohsone, White, 1983, ZnO)
9
… Flextensional ultrasonic transducers
10
ZnO structure (0.3 µm)

100 µm diameter membrane
G. Percin et al, Micromachined two-dimensional array
piezoelectrically actuated transducers, APL 72 (1998)
11
Cell size 30 - 80 microns

Frequency range: 3 – 12 MHz
k2eff = 1.7 to 2.5 %
12
… Flextensional ultrasonic transducers Proximity Sensing
13
… Flextensional ultrasonic transducers Droplet Ejectors
G. Perçin and B.T. Khuri-Yakub,

Micromachined droplet ejector arrays for controlled
ink-jet printing and deposition,
Rev.Sci.Instr. 73 (2002) 2193-96
14
LINEAR ACTUATORS - Micromirrors
Piezoelectric In-Plane Scanning Mirror
(Nippon Denso,Y. Ohtuka, 1995)
Frequency characteristics Scanning images
Resonator shape and method to

excite torsional vibration system
with 2 degrees of freedom
Driving voltage characteristics

Method to generate torque
15
Micromirrors
(AIST, Tsukuba, Japan, Chengkuo Lee, et al, 1996~1997)
a. b. 1 beam Bimorph structure:

Upper electrode
PZT layer • PZT +SiO2 (1.5µm)
2 beams Actuation of 1 beam:
SiO2 substrate Laser • Vin applied to the beam ---
Lower electrode bending
Actuation of 2 beams:
• 2 Vin with 180° phase shift--
c. 4 beams -1D rotation
V+
Actuation of 4 beams:
• additional 2 Vin with phase
shift---2D rotation
V+ V-
A. Schroth, C. Lee, S. Matsumoto, and R.
V- Maeda," Application of Sol-gel Deposited Thin
PZT Film for Actuation of 1D and 2D
Scanners," Sensors & Actuators A, 73 (1999)
144-152.
16
Micromirrors
(AIST, Tsukuba, Japan, Chengkuo Lee, et al, 1996~1997)
A. B. C.
v1= -v3=2.5V at 13.6kHz v1= -v3=2.5V at 13.6kHz
v2= -v4=2.5V at 14.6kHz
v2= -v4=2.5V at 14.6kHz
v4
v1 v4 v1
v3 v2 v3
v2
A. Schroth, C. Lee, S. Matsumoto, and R. Maeda," Application of Sol-gel

Deposited Thin PZT Film for Actuation of 1D and 2D Scanners," Sensors
& Actuators A, 73 (1999) 144-152.
17
Micromirrors
~ 1 micron/V
18
Micromirrors
2D Scanning Mirror Using Bi-layer PZT Films
J. Tsaur et al, AIST, Tsukuba, Japan, 2D Micro Scanner Actuated
by sol-gel derived double layered PZT, MEMS 2002
19
Cantilevers
20
Inertial systems
60 mic PZT
40 mic Si membrane
21
RF MEMS Piezoelectric RF-switch
d33 mode generated

by IDT electrodes
d33= 120 pC/N
Piezoelectric (PZT) < 40 V 2 µs Gap 1 micron Penn State Univ.
22
RF MEMS Piezoelectric RF-switch
Tunable parallel-plate varactor <6V Q = 210 2.5 – 3.5 µm LG, Park et al.
Park et al., LG Electronics, 2001
23
2. Microfabrication of piezoelectric MEMS based on
deflecting structures
Common tasks
IC's • Silicon micromachining
• Photolithography, 1 µm resolution is sufficient (now 0.13 µm in IC's)
• Thin films deposition and etching processes for standard Madou (1997)
SiO2, Si3N4, poly-Si and metal films.
Special tasks for pMEMS

For piezo MEMS, additionnal methods are required:
+
• Individual etching processes for PZT, AlN and its electrodes
• Deep silicon etching (membrane definition, SOI substrate, …)
• Surface micromachining (compatible sacrificial layers)
• Stress compensation to obtain flat structures
24
Piezoelectric multilayer, thin film structures
Substrates: Si, SiO2/SiN membranes, SiC, diamond*)
Electrodes: Pt/Ti, Mo, Al, Au/Cr
Piezoelectric layers: PZT, AlN, ZnO…
*) Shibata, Sensor and Actuators, 2004
J.Baborowski,
Journal of Electroceramics, 2004
Laminated PZT/Si deflecting structures used in piezoelectric MEMS:
bridge, cantilever and suspended membrane.
AlN PZT
e31,f [C/m2] -1.33 -12
d33,f [pm/V] 5.15 65
ε33,f 10.2 1200
D3 = e31, f ⋅(x1 + x2 )+ d33, f ⋅ σ3 Sensors tgδ 0.002 0.03
Current resp. [C/m2] 1.33 12
σ 1,2 = −e31, f ⋅ E3 , x3 = d33, f ⋅ E3 Actuators
Voltage resp. [GV/m2] 13 1
=
d 31 E
c 13 S/N [105 Pa0.5] 31.3 6.7
e 31 , f E E ≡ e 31 − E e 33 e 31 , f > e 31
s 11 + s 12 c 33
E
k2 0.22 0.15
e 2 s 13
d 33 = 33E ≡ d 33 − E d 31 < d 33
,f
c 33 E
s 11 + s 12 Power efficiency 110 5
P. Muralt, Integrated Ferroelectrics,1997
25
Film bulk acoustic resonator (FBAR)
Bulk micromachining BAW resonators are based on the
longitudinal thickness vibration mode of a
electrodes
piezoelectric thin film.
Acoustic insulation of the resonant structure
AlN
performed by air (or vacuum)
Si wafer
+ Large achievable coupling coefficient
+ Processing time
+ May be used in front end filters, or in
VCO's for low power RF applications.
Surface micromachining + High Q factor (typically up to 1000)
electrodes + Resonance frequency: 2-10 GHz
AlN – Structures sensitive to material stress,

prone to buckling (1-2 µm thick
Si wafer membranes or bridges)
– Fragile structures for manipulation,
packaging, etc.
– Use of IC wafers difficult in the case of
bulk micromachined resonators
26
Solidly mounted resonator (SMR)
electrodes Acoustic insulation performed by a
AlN Bragg acoustic mirror
acoustic reflector
Si wafer
f0 = 2.4 GHz
Stress compensated layers for a
crack-free structure
The acoustic reflector is a stack Dense layers => low wave
attenuation
of alternating λ/4 layers made of
Very smooth interfaces => low wave
materials with very different diffraction
elastic properties.
M.A.Dubois, CSEM
27
2. Microfabrication of piezoelectric MEMS based on
deflecting structures
DEPOSITION and growth control PATTERNING
PVD sputtering Wet chemical etching
CSD (sol-gel) HDP etching
PLD Surface micromachining (Piekarski, 2001)
STRESS CONTROL
Tensile stresses present in most of the
layers (up to +800 MPa Pt/Ti)
Compressive stresses in SiO2 wetox (-
300MPa)
Very sensible to deposition conditions
(AlN) and poling (e.g. PZT +/-60MPa)
Incertitude in stress level in SOI
DIMENSIONAL CONTROL
substrates Defines miniaturization rules
Stress adjustment Defines precision of elastic behavior and
characteristics (resonance frequencies,
coupling factor)
Defines border conditions (accordance
between simulation models and reality)
(Lee,Itoh, 1996)
28
Deposition and integration of {100}-textured sol-gel PZT films on silicon
(Ceramics Lab., EPFL, 1996-2002) 5
2.5 10
1) Pt bottom electrode
PZT (100)/(001)
Maeder (1998)
PZT (200)/(002)
P(100) = 98%
2 105
Muralt (1998)
intensity (counts)
Pt (111)
Hiboux (1999) 5
1.5 10
100 nm Pt/TiO2/Ti + 1 105

10 nm PbTiO3 {100} seeding layer
PZT (111)
PZT (110)
5 104
0 100
2) Elaboration of PZT precursors 20 25 30 35 40 45
angle Θ
2 (deg)
50 {100}
Budd (1985)
2 solutions with 10% and 30% Pb excess Seifert,, Ledermann (2001)

Ledermann, Baborowski, Muralt (2002)
3) Optimized Sol-gel process PZT 53/47 (100) on PbTiO3 (PT) seeding layer
Thickness: about 0.25 µm / layer; total up to 4 µm
-e31,f = 12 ± 0.3 C/m2
Zr Ti Pb Revealed lateral underetch:

- Global (several microns),
- In each crystalised layer during each
RTA step (below 100nm),
Ti Zr - Heterogeneity in each crystalised

layer due to migration of Zr and Ti
(Baborowski 2002, Cantoni 2003)
% at
29
PVD DEPOSITION
Spider: a versatile sputtering equipment
Cluster architecture:
loadlock, wafer transfer
module, 4 process chambers
Adapted for 100 or 150 mm

wafers
DC, pulsed DC, and RF

power sources for metal and
ceramic films
1 chamber designed and

reserved for AlN thin films
30
Sputtering of AlN thin films
Reactive sputtering from a pure Al target
in a nitrogen atmosphere
Very smooth surface
Dense columnar microstructure
~3% uniformity on 4" wafer
c-axis orientation (FWHM[002] =
1.58°), induced by the hexagonal
plane of Pt (111)
d33,f=3.7±0.3 pmV-1 1.0E+06
1.0E+05
Single run for deposition of : 1.0E+04
intensity
Bottom electrode: Ti , Pt 1.0E+03
Piezoelectric layer : AlN 1.0E+02
Top electrode Pt or AlSi
AlN (002)
AlN (004)
Si (200)
Pt (111)
Si (400)
Pt (222)
1.0E+01
1.0E+00
30 40 50 60 70 80 90
2theta [°]
M.A.Dubois, CSEM
31
Deposition and integration of AlN films on SOI substrates
(CSEM 2004)
AlN Ti Pt
(0002) (0002) (111)
AlN Pt Ti Pt
(0004) (311) (0004) (222)
Pt
(200)
Counts(a.u)
AlN 30 40 50 60 70 80 90
2θ (degree)
1. SiO2 compensation layer : Æ 1500 nm thermal wet oxidation of Si followed by HFdip

2. Ti adhesion layer : Æ 10nm
3. Pt seed layer : Æ 100nm
AES profile of SOI_5_1
through VIA of bottom -elec
4. AlN piezoelectric layer : Æ 1500 nm
35000 Oxygen 5. Pt top-electrode : Æ 100nm
Titanium
Platinum
30000 Ti sputtering Pt sputtering AlN sputtering
10nm 100nm 1500 nm
25000
Titanium 10 nm 7*10-8 mbar 3*10-7mbar 5*10-8 mbar

20000 Platinum 100 nm pvacuum
I [a.u.]
15000 pwork 3*10-3mbar 5*10-3mbar 4*10-3 mbar

10000 T 300°C 300°C 300°C
5000 gas 9 sccm Ar 15 sccm Ar 50 sccm N2
0 Deposition rate 1 nm/sec 4 nm/sec 0.72nm/s
0 5 10 15 20 25 30 35
etch tim e [m in]
Field source DC 1000W DC 1000W Pulsed DC 1500W
Oxygen presence in Ti layer

32
STRESS COMPENSATED BEAMS/ MEMBRANES
PZT {100}, 1 µm thin film
14 300
20
Piezoelectric coeff.
Piezoelectric coefficiet -e31,f (C/m2)

12 15
200
10 10
z-deflection (µm)
100 5
8
0
6 0
PZT 53/47 -5 Poling of PZT effect on residual stress :
4 -100 -10 Deflection + 20 µm = + 60 MPa
Poling:+ 64 MPa after poling
σδ = 3 MPa/µm
2 -15
before poling
Film stress -200
-20
0 0 500 1000 1500 2000 Ledermann et al., Sensor and Actuators, 2003
25 30 35 40 45 50 55 60 65
distance from the attachement (µm)
Composition [Zr]/([Zr]+[Ti])
Residual stresses as a function of film thickness in:

Residual stresses in wetox
SiO 2 wetox
SiO
AlN
2
400
400
300
0° 300
90°
200
Residual stress [MPa]

200
100
σ (MPa)
100
0
0 100 200 300 400 500 600 700 800 900 1000
-100
0
0.00 0.50 1.00 1.50 2.00 2.50
-200 -100
-300 -200
-400
-300
Thickness of SiO2 (nm)
AlN thickness [µm]
33
Mechanical system at equilibrium Equilibration of the structure

FRu = E s (c − α s ∆T )t s + ∑ Ei (c − α i ∆T )t i = 0 (1) Setting (3) to zero Æ M R =0
i
and resolving (1),(2),(3)
σ s (z − t b ) Ei ( z − t b )
0 hi
F =
b
R ∫ dz + ∑ ∫h dz = 0 (2)
−t s
r i i −1
r
0 hi
M R = ∫ σ S ( z − t b )dz + ∑ ∫ σ i ( z − t b )dz (3)

−t s i hi −1 Determination of residual stress
Determination of the wetox SiO2

layer thickness for
deflection-free membrane
Membrane definition z Materials constants
hPt ρ [103 Kg/m3] E [GPa] α [ppm] Tf [K] ν

tPt
tAlN tTi/Pt hAlN
hTi/Pt Si 2.33 180 2.8 + 0.003*T --- 0.278
tSiO2 h SiO2 2.2 70.4 0.058 --- 0.3
0 SiO2
-tb Ti 4.5 100 8.6 1941 0.33
Pt 21.45 136 8.8 2041 0.42
AlN 3.26 310 4.2 3273 0.24
-ts
34
EXAMPLE of sol – gel PZT / Si
E t s2 ts = substrate thickness (10 µm) tf = thin films thickness (1 µm)

σ res = ⋅ 2 ⋅d d = cantilever tip deflection (µm), L = cantilever length (2 mm)
1 − υ 3L t f E, ν = Young modulus and Poisson’s coefficient of Silicon
Au/Cr
PZT
Pt /Ti
SiO2 burried SiO2 wet

Si bulk
0.12 µm (PVD) Pt/TiO2 = + 839 ± 72 MPa

1.00 µm (sol-gel) PZT = + 113 ± 8 MPa (unpoled)
1.00 µm (250 kV/cm, 150°C, 10’) PZT = + 64 ± 5 MPa (poling)
0.2 µm (evaporation) Au/Cr = + 282 ± 11 MPa
X ? (wetox) SiO2 = - 297 ± 3 MPa
E.g. for 2 µm PZT XSiO2 = 1200 ± 40 nm or ± 12MPa

For SOI substrates the stress of buried oxide is not well known
35
PZT on 5 µm SOI AlN on 5 and 10 µm SOI
0.3 mm2 to 1 mm2 SQUARE MEMBRANE : 1 x 1mm2

35
Bending B1003-26
5 µm thick
Well stress compensated
Even if the stress value 33 cross 1
of buried oxide is uknown 31 cross 2
height [µ m]
2 - 4 micron of PZT 29
27
5 micron of Si ~10 - 20 µm
25
23
21
19
0.5 1 1.5 2
distance [mm]
1 x 1mm2
4
Bending B1002-27
10 µm thick
3
less than 1 µm
height [µ m]
2
1
0
-1 0.5 0.7 0.9 1.1 1.3 1.5 1.7
-2
distance [mm]
36
MICROFABRICATION: PROCESSING WITH SOI WAFERS
(Ceramics Lab., EPFL, 1999-2002)
Au/Cr
SiO2 PECVD PZT
Pt /Ti

Si bulk
Plasma
Etch (ICP, Cl2, Ar) Al
AlN
Wet etch (HCl:HF)
Pt
Air gap
Plasma Si
Etch (ICP, Cl2, Ar)
Deep Reactive
Ion Etching
(Plasma Etch, Bridge of suspended membrane Carazzetti et al.,EPFL 2002
ICP, RT, SiF6, C4 F8 )
Baborowski et al.,EPFL 2001
37
Reactive Ion Beam Etching of PZT and Pt thin films
Major problem with PZT, platinum thin films dry etching:
• limited volatility of reactive etch by-products, need energy !!

• the processes are more physical than chemical,
• low selectivity with respect to PR.
PZT : RIBE, CCl4/CF4/Ar, low bias
70 nm/min, SPR = 0.5, SPt = 1.6
ECR/RF Reactive Ion Beam Etching Pt : RIBE (CCl4) or RIE/ICP (Cl2)
gaz inlet RF, 2.45 GHz 60 nm/min, SPR = 0.5
ECR ion gun
2 µm
pumping
ions
+ PZT
wafer
water cooled 12.56 MHz Baborowski, Ledermann, Muralt (1999, 2000) PZT
substrate holder RF bias Pt
38
Advanced patterning for fundamental studies on ferroelectrics
gas
E-beam Ar, CCl4, CF4 2.45 GHz
ECR
Plasma
PMMA
PZT
grids
STO 800
600
Amplitude of piezoresponse (a.u.)

400
100 mm RF chuck 200
RF 13.56 MHz -200
Water cooled
-400
-600
S.Bühlman, J.Baborowski, P.Muralt, 2002
S.Bühlman PhD Thesis EPFL, 2004 -800
-20 -10 0 10 20
DC bias to tip (V)
39
Pt
PATTERNING OF GROOVES and SLIT SiO2
OPENINGS THROUGH PZT/Pt/SiO2/Si
(e.g.unclamped membranes, cantilevers)
Si
STANDARD: Photolithography & Dry etch:
• Standard photolithogaphy
SiO2 burried
• 100 nm Pt etch (ICP STS)
• 1200 nm wetox SiO2 etch (Alcatel, 300 sec)
• up to 50 µm Si (SOI) (Alcatel601E) – ETCH STOP on
SiO2buried
Au/Cr
PZT
SiO2 PVD
Pt /Ti
Below 5 micron ?
Si bulk
40
100nm Pt/Ti
1200 nm SiO2
947 nm
PATTERNING OF SUBMICRON SLIT OPENINGS <10 µm Si SOI
THROUGH AlN/Pt/SiO2/Si
(e.g.limited air conductivity in pressure sensors with minimum
roughness of sidewalls)
Au/Cr 100nm Pt/Ti
AlN or PZT
SiO2 PVD
1200 nm SiO2
Pt /Ti
SiO2 burried SiO2 wet <10 µm Si SOI 724 nm

Si bulk
HIGH DEFINITION: Direct Laser Writing & HDP Dry etch

HMDS & Shipley 1805, 1.75 µm, 90°C
Direct writing DWL: 4.04.W Bow < 50 nm
Development : Standard Rite Track 1818 Serie
Etching:
Pt: STS; Pt_etch (150W bias), 380sec. (photoresist removed)
SiO2: Alcatel 601E; SiO2 stand; DFA, 150 sec
Si: Alcatel 601E; Si_ambiant_2 (optimized for smalll openings); 360
sec
Final clean (solvant & SDR), plasma O2 ashing
41
Definition of membrane thickness (Ceramics Lab., EPFL, 1999-2004)
Standard vs. SOI wafers
Backside view;
2µm large slit
traversing the 10
µm thick
membrane
42
4. EXAMPLES (2001-2004)
Suspended Membranes:
3.1. MICROMACHINED ULTRASONIC TRANSDUCERS (PZT)

3.2. MICROPHONES FOR PHOTOACOUSTIC SENSING (PZT, AlN)
RF filters and resonators based on AlN thin films
RF Switch
43
3.1. MICROMACHINED ULTRASONIC TRANSDUCERS
Micromachined ultrasonic transducers (MUT) are investigated for phased

arrays in high frequency acoustic imaging
The basic element consists of a micromachined membrane that is driven by

piezoelectric actuation (pMUT)
We deal with piezoelectric MUT’s using Pb(ZrxTi1-x)O3 (PZT) thin films of 2

µm thickness deposited by sol-gel on 5 micron Si membranes .
We have studied:
MUT fundamentals,
thin film properties and processing,
fabrication and characterization of single elements,
FEA simulations,
experimental characterization of single transducers and linear arrays in air and
liquid
Parmenide
EU project
44
3.1. MICROMACHINED ULTRASONIC TRANSDUCERS
Fabricated devices: 2 micron PZT on 5 micron Si SOI substrate
Frequency range Membrane size:

(air loaded):
50 to 150 kHz 1000 µm
400 to 600 kHz 450 µm
750 to 1200 kHz 300 µm
45
Single element:
Comparison between the simulation and measurements
Basic Mode
@ 55,2 kHz
Second Mode
@ 106 kHz
Simulated by D.Schmidt (IBMT, Measured with a stroboscopic

Fraunhofer Institut) interferometric microscope (A.
Bosseboef CNRS, Orsay)
LC
EPFL 46
Suspended disc 1 mm2
BASIC Mode 1 - Vertical deflection @ 55,2 kHz, 0.5 V AC , 50kV/cm DC bias
A Deflection of res ≈ 60 kHz
C
device #13, RND GR - wafer 01
200
Deflection Z (nm)
-1.3µm/V
-200
B B
• Observed
-400
-600
coupe A-A
-800 coupe B-B
coupe C-C
C
-1000
0 800 1500
A distance x (µm)
Deflection vs. distance - simulation
500
1.7 mic/V
• Simulated
Deflection z (micron)
-500
-1000
-1500
-2000
The shape is close to the desired piston movement. 0 200 400 600 800 1000
The displacement is uniform around 360°. Distance x (micron) 47

HIGHEST COUPLING COEFFICIENT FOR HIGH FREQUENCY
TRANSDUCERS…
a1-df-res1-20dc
0.004
SOI wafer: 3.5 µm of Si 2 real meas

0.003
k = 5.3 % imag meas
PZT (001) 2 µm k = 23 %
real fit
Q = 135
imag fit
f res = 753 kHz 0.002
C = 90 pF
0
C =0
Admittance para DC bias = 100kV/cm
k2 = 5.3 % 0.001
Q =135 0
k=23% -0.001
-0.002
7.2 105 7.3 105 7.4 105 7.5 105 7.6 105 7.7 105 7.8 105 7.9 105
Frequency (Hz)
48
LOW FREQUENCY SINGLE DEVICES
in Air and in FLUORINERT TM (3M)
/22
Q/5
k2=const
AIR: Fluorinert:
fres = 97.5 kHz fres = 19 kHz
k2 = 1.0% k2 = 1.0% k2 = const

Q = 75 Q= 16 Q/5
49
APPLICATIONS
Presence and precise positioning sensor; transmission
Paper
Receiver
Emitter
Plastic
Air transmission, distance = 10 mm Air transmission, distance = 10 mm

4
actuator DISC F 1.1
2 4 Liquid 0.2
3 1.5 3 0.15
sensor DISC F 3.1
receiver voltage (V)

2 1
emitter voltage (V)
2 0.1
actuator voltage (V)
sensor voltage (V)
1 0.5 1 0.05
0 0 0 0
-1 -0.5 -1 -0.05
emitter DISC F 1.1
-2 -1 -2 -0.1
Charge amplifier: 10 pC receiver DISC F 3.1
-3 Excitation frequency = 98 kHz, 10 V AC, 5 V offset -1.5 -3 -0.15
-4 -2 -4 -0.2
0 200 400 600 800 1000 0 200 400 600 800 1000
time (µs) time (µs)
50
3.2 Piezoelectric microphones for photoacoustic detection
Pt Bottom electrode A 1,2,3 µm slit
AlN
Specificity of the application
3mm
1,2 mm
Low frequency operation Æ up to100Hz
Low acoustic pressure level Æ order of mPa B B
Key points Pt Top electrode

1,2 mm
A 1,2,3 µm slit
Build a MEMS device based on partially unclamped, deflecting

piezoelectric structures
Bridge or cantilever structures have been focused
Use of PZT or AlN as piezoelectric layer
Use of SOI wafers Æ perfectly well defined Si membrane
Patterning of very narrow slits Æ advanced ICP dry etch
Possibility to build arrays of devices for complementary
properties
Integration of both amplification unit and device on same PCB
51
3.2. Acoustic sensors based on PZT sol-gel films
The cantilever concept for an audio microphone/microspeaker was proposed by White & al in 1998. (J. Micromech.
Microeng. 8 (1998) 230-238)
4.5 µm thick cantilever ZnO/SiN/SiO2: 10 µm slit, response at 100 Hz = 38 mV/Pa
1 micron thick PZT on 10 micron Si membrane;

Ledermann et al., 2002
2x2 mm beam Slit 5 and 10 µm
2x2.5 mm beam
2x2 mm bridge
Electrode for pyro

effect compensation
(static). via
Cantilever top electrode
52
3.2. Acoustic sensors based on PZT sol-gel films
N.Ledermann, J.Baborowski et al., JMM, 2004
Cantilever C5-3 - w.1202 Bridge B3-10 - w.1202

200
80
70
150
60
Sensitivity (mV/Pa)
sensitivity (mV/Pa)
50
100
40
V = 4 cm3
V = 4 3cm
V = 2 cm3 30 V = 2 3cm
V = 1 cm3
50 V = 1 3cm
V = 0.5 cm3 20
V = 0.53cm
10
0
0 10 20 30 40 50 0
frequency (Hz) 0 10 20 30 40 50
frequency (Hz)
S0, theo = 3.21 pC/Pa or 321 mV/Pa S0, theo = 1.72 pC/Pa or 172 mV/Pa
S0, C5-3 = 226 mV/Pa ≈ 70 % S0, theo S0, B3-10 = 68.3 mV/Pa ≈ 39 % S0, theo
53
3.2. Acoustic sensors based on AlN films
Advantages of AlN based sensors:
Full IC compatible
Reduced Thermal Budget
No poling required
Good selectivity for micromachining Ground
Low losses
Future integration SoC (System on

Chip) possible
Phase
Cantilever – backside view
1.5x1 mm CANTILEVER
AlN on membrane
4.5E-07
4.0E-07
Si SOI 3.5E-07
3.0E-07
membrane
Re[Y]
2.5E-07
Etched AlN for 2.0E-07
1.5E-07
2 µm slit slit opening 1.0E-07
5.0E-08
0.0E+00
6'000 6'500 7'000 7'500 8'000 8'500 9'000
Frequency [Hz]
J.BABOROWSKI, CSEM 2004
54
Microhotplate as processing device for local thin film growth
Backside view
2 mm
After PZT
crystallization
Frontside view
PZT
Pt 100 nm Pt
SiO2 150 nm SiO2
Ta5Si3 200 nm
Cross-section Ta5Si3
Si3N4 200 nm
SiO2 650 nm Si3N4
SiO2
Diploma work of F. Calame; with J. Baborowski

55
RF MEMS
for wireless communication and
Ambient Intelligence (EC IP Mimosa)
CSEM involved in:
BAW resonators
Filters
RF PIEZOELECTRIC Switch
56
Conclusions
Piezoelectric Micro-Electro-Mechanical Systems (pMEMS) are efficient for monitoring of
pressure, vibration and positioning and for RF applications.
Technology for thin PZT / SOI MEMS and AlN / SOI MEMS demonstrated and
actuators & sensors has been fabricated with accordance to simulations and design
Actuators, vibrating membranes, deflecting systems, sensing devices in large range of
frequency (few Hz to few GHz) can be fabricated in mass quantity with high yield (the
use of silicon on insulator wafers in combination with deep silicon dry etching ICP)
Stress control of the multilayer thin film structures is key factor for achieving high and
uniform response.
Submicron patterning of complex piezoelectric structures achieved.
OPEN QUESTIONS:
• Yield and reproducibility in fabrication of piezoelectric layers
(PZT, AlN)
• Post processing (poling) and Packaging = Price
• Reliability and life time
• Low cost mass production facilities
• Special facilities
• Competitive new applications
57
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ACKNOWLEDGEMENTS
TEAMS of
Ceramic Lab, EPFL,
Center of Micro- Nanotechnology, EPFL
Center of Microscopy, EPFL
LMARC, Besancon, France,
CSEM, Neuchatel
HachUltra Analytics, Geneva
OFES and EU Commission
Thank you for your kind attention

And for investing your time
58

Microfabrication of Piezoelectric MEMS

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Microfabrication of Piezoelectric MEMS

Chapter in Journal of Electroceramics · January 2005

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RF & Piezoelectric Components Group

Government for financing applied research

Core technologies: Micro- and Nano- RF & PIEZO

 CENTER OF MICRO- and

• Establishment of reliable microfabrication processes (mostly “dry” plasma

• Demonstration of new applications

Dedicated microfabrication methods, process flow

Plate waves, SAW Standing Waves

ZnO structure (0.3 µm)

Cell size 30 - 80 microns

G. Perçin and B.T. Khuri-Yakub,

Frequency characteristics Scanning images

Resonator shape and method to

Driving voltage characteristics

a. b. 1 beam Bimorph structure:

A. Schroth, C. Lee, S. Matsumoto, and R. Maeda," Application of Sol-gel

d33 mode generated

Piezoelectric (PZT) < 40 V 2 µs Gap 1 micron Penn State Univ.

Park et al., LG Electronics, 2001

SiO2, Si3N4, poly-Si and metal films.

Special tasks for pMEMS

AlN – Structures sensitive to material stress,

100 nm Pt/TiO2/Ti + 1 105

2 solutions with 10% and 30% Pb excess Seifert,, Ledermann (2001)

Zr Ti Pb Revealed lateral underetch:

Ti Zr - Heterogeneity in each crystalised

 Adapted for 100 or 150 mm

 DC, pulsed DC, and RF

 1 chamber designed and

 Single run for deposition of : 1.0E+04

 Piezoelectric layer : AlN 1.0E+02

 Top electrode Pt or AlSi

1. SiO2 compensation layer : Æ 1500 nm thermal wet oxidation of Si followed by HFdip

Titanium 10 nm 7*10-8 mbar 3*10-7mbar 5*10-8 mbar

15000 pwork 3*10-3mbar 5*10-3mbar 4*10-3 mbar

Oxygen presence in Ti layer

Piezoelectric coefficiet -e31,f (C/m2)

Residual stresses as a function of film thickness in:

Residual stress [MPa]

Mechanical system at equilibrium Equilibration of the structure

M R = ∫ σ S ( z − t b )dz + ∑ ∫ σ i ( z − t b )dz (3)

Determination of the wetox SiO2

hPt ρ [103 Kg/m3] E [GPa] α [ppm] Tf [K] ν

E t s2 ts = substrate thickness (10 µm) tf = thin films thickness (1 µm)

SiO2 burried SiO2 wet

0.12 µm (PVD) Pt/TiO2 = + 839 ± 72 MPa

E.g. for 2 µm PZT XSiO2 = 1200 ± 40 nm or ± 12MPa

PZT on 5 µm SOI AlN on 5 and 10 µm SOI

0.3 mm2 to 1 mm2 SQUARE MEMBRANE : 1 x 1mm2

SiO2 PECVD PZT

SiO2 burried SiO2 wet

Major problem with PZT, platinum thin films dry etching:

• limited volatility of reactive etch by-products, need energy !!

ECR ion gun

Amplitude of piezoresponse (a.u.)

100 mm RF chuck 200

RF 13.56 MHz -200

DC bias to tip (V)

SiO2 burried SiO2 wet <10 µm Si SOI 724 nm

CENTER OF MICRO- and

Adapted for 100 or 150 mm

DC, pulsed DC, and RF

1 chamber designed and

Single run for deposition of : 1.0E+04

Piezoelectric layer : AlN 1.0E+02

Top electrode Pt or AlSi

Titanium 10 nm 710-8 mbar 310-7mbar 5*10-8 mbar

15000 pwork 310-3mbar 510-3mbar 4*10-3 mbar

Micromachined ultrasonic transducers (MUT) are investigated for phased

The basic element consists of a micromachined membrane that is driven by

We deal with piezoelectric MUT’s using Pb(ZrxTi1-x)O3 (PZT) thin films of 2

Simulated by D.Schmidt (IBMT, Measured with a stroboscopic

Key points Pt Top electrode

Build a MEMS device based on partially unclamped, deflecting

Future integration SoC (System on

CSEM involved in:

OFES and EU Commission