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DC and AC Analysis of a Common Emitter
Amplifier
Course – Section : _ ECE20L-2 – E05
Group Number :
Grade :
Remarks :
Based on the measured DC voltages, answer the following questions. Briefly explain
your every answer.
1.1. How much is the voltage across the base-emitter junction (VBE) of the transistor?
How is the base-emitter junction of the transistor biased?
The voltage is 0.57924V, and since the base voltage is higher than the producer voltage,
this shows that the base-producer is forward-one-sided
1.2. How much is the voltage across the base-collector junction (VBC) of the transistor?
How is the base-collector junction of the transistor biased?
The voltage is 6.80153, and since the collector voltage is greater than the base voltage,
this indicates that the base-collector junction is forward biased
1.3. Based on the conditions of BE and BC junctions, what is the operating condition of
the transistor? What is the impact of this condition to the amplifying action of the
transistor?
The BE intersection and the BC intersection are forward one-sided, which implies that
the semiconductor is in the immersion state
2. Run the transient simulations in LTSPICE using Figure 1 to Figure 4 and place their
respective output waveforms in the space provided below each circuit / Figure #.
Use .tran 0 1m 0. Fill out Table 1 using the 4 circuits that you have simulated.
4. Discuss thoroughly the effect of the bypass capacitor as well as the load resistor
with respect to the output of the given circuit. Analyze the data that you have
gathered from table 1 and discuss it.
On the off chance that the bypass capacitor is eliminated, the voltage won't increment,
expanding voltage. On the off chance that the bypass capacitor is available, the voltage
rises, in this manner a higher voltage rise. In case there is a load resistance, the output
voltage comes around about half.
Interpretation of Data
For area 1 in this preliminary, the voltage commitments of figures 1,2,3, and
4 contacts the upper and lower line subsequently have a more lengthy out voltage
range (occurring to a higher voltage examining). Interestingly, the voltage yields of
figures 1 to 4 don't contact the upper, and as far as possible/line as needs be has a
more restricted voltage range (happening to a lower voltage scrutinizing).
For area 2 number 1, I got the characteristics to get the potential gains of
Collector Voltage, Base Voltage, Emitter Voltage, Collector Current, Base Current,
in the wake of doing the circuits through getting the SPICE ERROR LOG. After
which, I figured for the V(BC) and V(CE) independently. To get the V(BC), I
deducted the value of Collector Voltage from the Base Voltage esteem. For the
V(CE), I eliminated the expense of the Emitter Voltage from the Collector Voltage to
procure the result.
For area 2, number 2, I finished the table off from the characteristics I got in
the SPICE ERROR LOG, which are the Input Voltage, Output Voltage, Input
Frequency, Output Frequency, and Voltage Gain independently.
For area 2, number 3, I have researched that there are four unique systems
other than the Voltage Divider Bias techniques. These are the Fixed Base Biasing
A Transistor, Collector Feedback Biasing A Transistor, Dual Feedback Transistor
Biasing, Transistor Biasing With Emitter Feedback.
For area 2, number 4, I have seen that the load resistor and evade capacitor
being accessible and missing in circuits independently per situation adds to
different results.
Conclusion
All in all, I can infer that the voltage acquire is high when sidestep capacitors
are essential for the circuits. At the point when later eliminated, the voltage acquire
is insignificant. I likewise tracked down that the yield recurrence won't be perused in
case there is no detour capacitor. For load opposition, if present in the circuit, the
voltage yield is split.
Along these lines, in case Vbase is more prominent than the producer voltage,
the base-producer will be forward one-sided. At the point when the authority
voltage is higher than the base voltage, the base-gatherer intersection is ahead
one-sided. Also that intersections BC and BE are forward one-sided, which implies
that the semiconductor is immersed.
References
https://resources.pcb.cadence.com/blog/2020-bjt-amplifiers-common-emitters-and-dc-analysis
https://www.electronics-tutorials.ws/amplifier/transistor-biasing.html
https://studylib.net/doc/18086895/ac-analysis-of-a-common-emitter-amplifier
https://www.elprocus.com/common-emitter-amplifier-circuit-working/
Results with selfie
Figure #1
Figure #2
Figure #3
Figure #4