APM3095P

P-Channel Enhancement Mode MOSFET

Features Pin Description

• -30V/-6A , RDS(ON)=95mΩ(typ.) @ VGS=-10V

RDS(ON)=140mΩ(typ.) @ VGS=-4.5V
• Super High Dense Cell Design for Extremely
Low R
w w w . D a t a S h e e t 4 U . c o m DS(ON)
• Reliable and Rugged
• TO-252 Package
G D S

Top View of TO-252

S
Applications

• Power Management in Notebook Computer , G

Portable Equipment and Battery Powered

Systems.
D D

Ordering and Marking Information P-Channel MOSFET

APM 3095P P ackage C ode

U : T O -2 5 2
H a n d lin g C o d e O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
Tem p. R ange H a n d lin g C o d e
P a c ka g e C od e TU : Tube
TR : Tape & Reel

A P M 3095P U : A P M 3095P X X X X X - D a te C o d e
XXXXX

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage -30
V
VGSS Gate-Source Voltage ±25
ID* Maximum Drain Current – Continuous -12
A
IDM Maximum Drain Current – Pulsed -30
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.1 - Oct., 2002
 APM3095P

Absolute Maximum Ratings Cont. (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

PD Maximum Power Dissipation TA=25°C 50
W
TA=100°C 20
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C

www.DataSheet4U.com RθjA Thermal Resistance – Junction to Ambient 50 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM3095P
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static
Drain-Source Breakdown
BVDSS VGS=0V , IDS=-250µA -30 V
Voltage
Zero Gate Voltage Drain
IDSS VDS=-24V , VGS=0V -1 µA
Current
VGS(th) Gate Threshold Voltage VDS=VGS , IDS=-250µA -1 -1.5 -2 V
IGSS Gate Leakage Current VGS=±25V , VDS=0V ±100 nA
Drain-Source On-state VGS=-10V , IDS=-6A 95 110
RDS(ON)a mΩ
Resistance VGS=-4.5V , IDS=-3A 140 160
VSDa Diode Forward Voltage ISD=-1.25A , VGS=0V -0.7 -1.3 V
b
Dynamic
Qg Total Gate Charge VDS=-15V , IDS=-3A 8 13
Qgs Gate-Source Charge VGS=-10V 1.9 nC
Qgd Gate-Drain Charge 1.1
td(ON) Turn-on Delay Time VDD=-15V , IDS=-1A , 10 20
Tr Turn-on Rise Time 8 20
VGEN=-10V , RG=6Ω ns
td(OFF) Turn-off Delay Time 25 50
RL=15Ω
Tf Turn-off Fall Time 5 15
Ciss Input Capacitance VGS=0V 550
Coss Output Capacitance VDS=-25V 120 pF
Crss Reverse Transfer Capacitance Frequency=1.0MHz 75

Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp. 2 www.anpec.com.tw

Rev. A.1 - Oct., 2002
 APM3095P

Typical Characteristics

Output Characteristics Transfer Characteristics

10 10
-VGS=5,6,7,8,9,10V

8 8

-ID-Drain Current (A)

-ID-Drain Current (A)

-V GS=4V
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6 6

4 4
TJ=125°C

-V GS=3V TJ=-55°C
2 2 TJ=25°C

0 0
0 2 4 6 8 10 0 1 2 3 4 5

-VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current

1.50 0.24
-IDS=250uA
0.21
-VGS(th)-Threshold Voltage (V)

1.25
RDS(ON)-On-Resistance (Ω)

0.18
-V GS=4.5V
1.00
(Normalized)

0.15

0.75 0.12
-V GS=10V
0.09
0.50
0.06
0.25
0.03

0.00 0.00
-50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8

Tj - Junction Temperature (°C) -ID - Drain Current (A)

Copyright  ANPEC Electronics Corp. 3 www.anpec.com.tw

Rev. A.1 - Oct., 2002
 APM3095P

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature

0.30 2.00
-ID=3A -VGS=10V
-ID=6A
1.75

RDS(ON)-On-Resistance (Ω)
RDS(ON)-On-Resistance (Ω)

0.25
1.50
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(Normalized)
0.20
1.25

0.15 1.00

0.75
0.10
0.50
0.05
0.25

0.00 0.00
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
-VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C)

Gate Charge Capacitance

10 800
-VDS=15V Frequency=1MHz
9 -ID=3A
-VGS-Gate-Source Voltage (V)

700
8
600 Ciss
Capacitance (pF)

7
6 500

5 400
4
300
3
200
2 Coss
1 100 Crss

0 0
0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30
QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V)

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

Rev. A.1 - Oct., 2002
 APM3095P

Typical Characteristics

Source-Drain Diode Forward Voltage Single Pulse Power

10 250

200
-IS-Source Current (A)

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Power (W)
150
1
TJ=150°C TJ=25°C
100

50

0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1E-3 0.01 0.1 1 10 100 1000
-VSD -Source-to-Drain Voltage (V) Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

Normalized Effective Transient

1 Duty Cycle=0.5
Thermal Impedance

D=0.2

D=0.1
D=0.05
0.1 D=0.02
D=0.01
SINGLE PULSE

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W
3.T JM -T A =P DMZ thJA

0.01
1E-4 1E-3 0.01 0.1 1 10 100 1000

Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 5 www.anpec.com.tw

Rev. A.1 - Oct., 2002
 APM3095P

Packaging Information

TO-252( Reference JEDEC Registration TO-252)

E A
b2 C1
L2
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D
H

L1
L
b C
e1
A1

Mi ll im et er s Inc he s
Dim
Min . Ma x . Min . Ma x .
A 2. 1 8 2. 3 9 0. 0 86 0. 0 94
A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50
b 0. 5 08 0. 8 9 0. 0 20 0. 0 35
b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15
C 0. 4 6 0. 5 8 0. 0 18 0. 0 23
C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23
D 5. 3 34 6. 2 2 0. 2 10 0. 2 45
E 6. 3 5 6. 7 3 0. 2 50 0. 2 65
e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04
H 9. 3 98 10 . 41 0. 3 70 0. 4 10
L 0. 5 1 0. 0 20
L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40
L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80
Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw
Rev. A.1 - Oct., 2002
 APM3095P

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999
temperature

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Peak temperature

183°C
Pre-heat temperature

Time

Classification Reflow Profiles

Convection or IR/ Convection VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C) 120 seconds max.
Temperature maintained above 183°C 60 ~ 150 seconds
Time within 5°C of actual peak 10 ~ 20 seconds 60 seconds
temperature
Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
Ramp-down rate 6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature 6 minutes max.

Package Reflow Conditions

pkg. thickness ≥ 2.5mm
and all bags
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

Rev. A.1 - Oct., 2002
 APM3095P

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

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Carrier Tape & Reel Dimensions
t

Po P D
E
P1

F Bo
W

Ao D1 Ko

T2

J
C
A B

T1

Application A B C J T1 T2 W P E
330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3 2.5± 0.5 16+ 0.3 8 ± 0.1 1.75± 0.1
-0.2 - 0.1
TO-252 F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

Rev. A.1 - Oct., 2002
 APM3095P

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

TO- 252 16 13.3 2500

Customer Service

Anpec Electronics Corp.

Head Office :
www.DataSheet4U.com
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright  ANPEC Electronics Corp. 9 www.anpec.com.tw

Rev. A.1 - Oct., 2002