APM3055L

N-Channel Enhancement Mode MOSFET

Features Pin Description

• 30V/12A, RDS(ON)=100mΩ(max) @ VGS=10V

RDS(ON)=200mΩ(max) @ VGS=4.5V
• Super High Dense Cell Design
• High Power and Current Handling Capability
1 2 3
• TO-252 and SOT-223 Packages 1 2 3

G D S
G D S
Applications Top View of TO-252 Top View of SOT-223

• Switching Regulators
• Switching Converters

Ordering and Marking Information

A P M 3 055 L Package C ode

U : T O -2 5 2 V : S O T -2 2 3
H a n d lin g C o d e O p e ra tio n J u n c tio n T e m p . R a n g e
Tem p. R ange C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
Package C ode TR : Tape & R eel

AP M 3055L
A P M 3 0 5 5 L U /V : XXXXX X X X X X - D a te C o d e

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
ID Maximum Drain Current – Continuous 15
A
IDM Maximum Drain Current – Pulsed 30

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

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 APM3055L

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

PD Maximum Power Dissipation TO-252 50
TA=25°C
SOT-223 3
W
TO-252 20
TA=100°C
SOT-223 1.2
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM3055L
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static
BVDSS Drain-Source Breakdown VGS =0V, ID=250µA
30 V
Voltage
IDSS Zero Gate Voltage Drain VDS =24V, VGS=0V
1 µA
Current
VGS(th) Gate Threshold Voltage VDS =VGS, ID=250µA 1 3 V
IGSS Gate Leakage Current VGS =±20V, VDS =0V ±100 nA
RDS(ON) Drain-Source On-state VGS =10V, ID=12A 75 100
Resistance mΩ
VGS =4.5V, ID =6A 100 200
VSD Diode Forward Voltage IS=6A, VGS =0V 0.6 1.3 V
Dynamic
Qg Total Gate Charge VDS =15V, VGS=10V, 8.5 12
Q gs Gate-Source Charge ID=2A 1.1 nC
Q gd Gate-Drain Charge 1.8
tON Turn-on Time VDD=15V, ID=2A, 40
td(ON) Turn-on Delay Time VGS =10V, RG=6Ω 11
tr Turn-on Rise Time 17
ns
td(OFF) Turn-off Delay Time 37
tf Turn-off Fall Time 20
tOFF Turn-off Time 60

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 APM3055L

Typical Characteristics

Output Characteristics Transfer Characteristics

25
VGS = 10, 9, 8, 7, 6V 25
o
-55 C
20
VGS = 5V

ID- Drina current (A)

IDS- Drain Current(A)

20
o
+25 C
15
VGS = 4V 15 o
+125 C

10
10

VGS = 3V
5
5

0 0
0 1 2 3 4 0 1 2 3 4 5 6
VDS- Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V)

Threshold Voltage v.s.TJ Normalized V GS(th) v.s. TJ

1.2

1.6
1.1
1.5
IDS =250µ A
VGS(th)- Normalized

1.4
1.0 IDS =250 µ A
VGS(th) (V)

1.3 0.9

1.2
0.8
1.1
0.7
1.0

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
o o
Tj - Junction Temperature( C) Tj - Junction Temperature( C)

On-Resistance v.s. Gate to Source Voltage On-Resistance v.s. Junction Temperature

1.5
170
160 1.4
RDS(ON)- On-Resistance (m Ω )

RDS(ON)- On-Resistance (Ω )

150 VGS =10V

1.3 IDS =12A
140
(Normalized)

130
1.2

120 ID=10A
1.1
110
1.0
100
90 0.9
80
0.8
70
3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150
VGS- Gate Voltage (V) o
TJ-Junction Temperature( C)

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 APM3055L

Typical Characteristics (Cont.)

Gate Charge Capacitance

10 500

400
VGS - Gate to Source Voltage (V)

Capacitance (pF)
VDS=15V
IDS = 2A
6 300

Ciss
200
4

Coss
100
2
Crss
0
0
0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30
QG-Gate Charge(nC) VDS- Drain-to-Source Voltage(V)

Source-Drain Diode Forward Voltage Single Pulse Power Capability

50

10 40
IS- Source Current(A)

o
TJ=150 C
Peak Power (W)

30
o
TJ=25 C

1 20

10

0.1 0
0.4 0.8 1.2 1.6 2.0 2.4 1E-5 1E-4 1E-3 0.01 0.1 1 10
VSD- Source to Drain Voltage Time (sec)

Normalized Thermal Transient Impedance, Junction to Ambient

Normalized Effective Transient

1
Duty Cycle=0.5
Thermal Impedance

2DM
D=0.2
J
D=0.1 J

0.1 D=0.05

D=0.02
1.1.Duty
Duty Cycle,
Cycle D= t1/t2
, D=t1/t2 o
D=0.01 2.2.Per
Per Unit Base=R
Base=RthJA =50°C/W
=50
thJA
C/W
3.3.T
TJM
JM
-TA
A
=P
=P DM
ZZ
DM thJA
thJA
SINGLE PULSE 4. Surface Mounted

0.01
1E-5 1E-4 1E-3 0.01 0.1 1 10 100
Square Wave Pulse Duration(sec)

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

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 APM3055L

Package Information

TO-252( Reference JEDEC Registration TO-252)

E A
b2 C1
L2

D
H

L1
L
b C
e1
A1

Mi ll im et er s Inc he s
Dim
Min . Ma x . Min . Ma x .
A 2. 1 8 2. 3 9 0. 0 86 0. 0 94
A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50
b 0. 5 08 0. 8 9 0. 0 20 0. 0 35
b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15
C 0. 4 6 0. 5 8 0. 0 18 0. 0 23
C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23
D 5. 3 34 6. 2 2 0. 2 10 0. 2 45
E 6. 3 5 6. 7 3 0. 2 50 0. 2 65
e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04
H 9. 3 98 10 . 41 0. 3 70 0. 4 10
L 0. 5 1 0. 0 20
L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40
L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80
Copyright  ANPEC Electronics Corp. 5 www.anpec.com.tw
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 APM3055L

Package Information

SOT-223( Reference JEDEC Registration SOT-223)

D A
a
B1 c

H E

L
K

e A1

e1

Dim Millimeters Inches

Min. Max. Min. Max.
A 1.50 1.80 0.06 0.07
A1 0.02 0.08
B 0.60 0.80 0.02 0.03
B1 2.90 3.10 0.11 0.12
c 0.28 0.32 0.01 0.01
D 6.30 6.70 0.25 0.26
E 3.30 3.70 0.13 0.15
e 2.3 BSC 0.09 BSC
e1 4.6 BSC 0.18 BSC
H 6.70 7.30 0.26 0.29
L 0.91 1.10 0.04 0.04
K 1.50 2.00 0.06 0.08
α 0° 10° 0° 10°
β 13° 13°

Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw

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 APM3055L

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999
temperature

Peak temperature

183°C
Pre-heat temperature

Time
Classification Reflow Profiles

Convection or IR/ VPR

Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C) 120 seconds max
Temperature maintained above 183°C 60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds
Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate 6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature 6 minutes max.

Package Reflow Conditions

pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

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 APM3055L

Re l i a b i l i t y t e st p r o g r a m

Te s t ite m M e th o d D e s c rip tio n

S O L D E R A B IL IT Y M IL -S T D -8 8 3 D -2 0 0 3 2 45 °C , 5 S E C
H O LT M IL -S T D -8 8 3 D -1 0 0 5 .7 1 0 0 0 H rs B ia s @ 1 2 5 ° C
PCT J E S D -2 2 - B , A 1 0 2 1 6 8 H rs , 1 0 0 % R H , 1 2 1 ° C
TST M IL -S T D -8 8 3 D -1 0 11 .9 -6 5 °C ~ 1 5 0 °C , 2 0 0 C y c le s
ESD M IL -S T D -8 8 3 D -3 0 1 5 .7 V H B M > 2 K V, V M M > 2 0 0 V
L a tc h -U p JESD 78 1 0 m s , I tr > 1 0 0 m A

Carrier Tape
t

Po P D
E
P1

Bo
F
W

Ko
Ao D1

T2

C
A B

T1

Application A B C J T1 T2 W P E
330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3 2.5± 0.5 16+ 0.3 8 ± 0.1 1.75± 0.1
-0.2 - 0.1
TO-252 F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
Application A B C J T1 T2 W P E
330±1 62±1.5 12.75± 2 ± 0.6 12.4 +0.2 2± 0.2 12 ± 0.3 8 ± 0.1 1.75± 0.1
0.15
SOT-223 F D D1 Po P1 Ao Bo Ko t
5.5 ± 0.05 1.5+ 0.1 1.5+ 0.1 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 7.5± 0.1 2.1± 0.1 0.3±0.05

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

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 APM3055L

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOT- 223 12 9.3 2500
TO- 252 16 13.3 2500

Customer Service

Anpec Electronics Corp.

Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright  ANPEC Electronics Corp. 9 www.anpec.com.tw

Rev. A.6 - Apr., 2002

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