VISVESVARAYA NATIONAL INSTITUTE

OF TECHNOLOGY NAGPUR

VLSI DESIGN
MTECH 2021-23
ADP LAB

ASSIGNMENT 3
Submitted by

Rutvik Patel
MT21MVD022

Rutvik Patel
1. An abrupt Si p-n junction of square cross section with length
8.86um has Na = 1e18 cm-3on one side and Nd = 5e15 cm-3on
the other side.
 Code for Sdevice-

File {
* input files:
Grid = "PND1_msh.tdr"
*output files:
Plot = "pn"
Current = "pn"
Output = "pn"
}
Electrode {
{ Name="anode" Voltage=0}
{Name="cathode" Voltage=0}
}
Physics {
AreaFactor = 8.86
Mobility (DopingDependence HighFieldSat Enormal)
EffectiveIntrinsicDensity (BandGapNarrowing (OldSlotboom))
}
*Physics(Materal="SiO2") {Recombination(eBarrierTunneling) }
*Physics(MaterialInterface="Silicon/SiO2") {GateCurrent(eLucky)}
Plot {
eDensity hDensity eCurrent hCurrent
Potential SpaceCharge ElectricField
eMobility hMobility eVelocity hVelocity ConductionBandEnergy
ValanceBandEnergy
eQuasiFermiEnergy eQuasiFermiPotential hQuasiFermiEnergy
hQuasiFermiPotential
Doping DonorConcentration AcceptorConcentration }
Math {
Extrapolate
RelErrControl
}
Solve { #-- initial solution:
Poisson
Coupled { Poisson Hole Electron }
#--ramp hp:
Quasistationary ( InitialStep=0.02 MaxStep=0.05 MinStep=1.e-3
Goal{ Name="cathode" voltage=0} )
{ Coupled { Poisson Hole Electron } }
}
i). Draw an equilibrium band diagram for the junction in sdevice
and determine the contact potential V0 from the diagram and
calculate V0 from the standard equation then compare both
results.
V0 = 0.329-(-0.445) =0.774

 Theoretical Calculation :-
 ii) Calculate the Fermi level positions at 300 K in the p and n
regions by hand calculation and by simulation then compare both
results.

 Theoretical Calculation :-
 iii) Sketch E(x) and charge density with respect to distance x
in svisual.

 Space charge Density:-

 Electric Field:-
 iV )Calculate xn0, xp0, Q+, and E0 for this junction at equilibrium
(300 K) theoretically and from simulated device and then
compare the both results.

 Electron Density:-

 Hole Density:-
 E0 at junction:-

 Calculation:-
1. Depletion Width:-

2. Depletion Width on both N and P side:-

3. Electric filed at junction: -

V) Apply a forward biased voltage of 2V and draw band diagram
for this device.

Vi) Apply a reverse biased voltage of 2V and draw band diagram

for this device
2. An abrupt Si p-n junction of square cross section with length
0.4um has Na = 1e18 cm-3on one side and Nd = 5e15 cm-3on the
other side.
 Code for Sdevice-

File {
* input files:
Grid = "PN_D_2_msh.tdr"
*output files:
Plot = "pn"
Current = "pn"
Output = "pn"
}
Electrode {
{ Name="anode" Voltage=0}
{Name="cathode" Voltage=0}
}
Physics {
AreaFactor = 8.86
Mobility (DopingDependence HighFieldSat Enormal)
EffectiveIntrinsicDensity (BandGapNarrowing (OldSlotboom))
}
*Physics(Materal="SiO2") {Recombination(eBarrierTunneling) }
*Physics(MaterialInterface="Silicon/SiO2") {GateCurrent(eLucky)}
Plot {
eDensity hDensity eCurrent hCurrent
Potential SpaceCharge ElectricField
eMobility hMobility eVelocity hVelocity ConductionBandEnergy
ValanceBandEnergy
eQuasiFermiEnergy eQuasiFermiPotential hQuasiFermiEnergy
hQuasiFermiPotential
Doping DonorConcentration AcceptorConcentration }
Math {
Extrapolate
RelErrControl
}
Solve { #-- initial solution:
Poisson
Coupled { Poisson Hole Electron }
#--ramp hp:
Quasistationary ( InitialStep=0.02 MaxStep=0.05 MinStep=1.e-3
Goal{ Name="cathode" voltage=0} )
{ Coupled { Poisson Hole Electron } }
}
i). Draw an equilibrium band diagram for the junction in sdevice
and determine the contact potential V0 from the diagram and
calculate V0 from the standard equation then compare both
results.
V0 = 0.329-(-0.445) =0.774

 Theoretical Calculation :-
 ii) Calculate the Fermi level positions at 300 K in the p and n
regions by hand calculation and by simulation then compare both
results.

 Theoretical Calculation :-
 iii) Sketch E(x) and charge density with respect to distance x
in svisual.

 Space charge Density:-

 Electric Field:-
 iV )Calculate xn0, xp0, Q+, and E0 for this junction at equilibrium
(300 K) theoretically and from simulated device and then
compare the both results.

 Electron Density:-

 Hole Density:-
 E0 at junction:-

 Calculation:-
1. Depletion Width:-

2. Depletion Width on both N and P side:-

3. Electric filed at junction: -

V) Apply a forward biased voltage of 2V and draw band diagram
for this device.

Vi) Apply a reverse biased voltage of 2V and draw band diagram

for this device
Conclusion:- From this assignment, we learn to fabricate pn junction in
sprocess and we added electrical properties like mobility, conduction band,
valance band fermi level, velocity in that device by writing commands in sdevice.
Finally we observed our fabricated device in svisual. We also calculated contact
potential, total depletion width and depletion width in both region, fermi level
and various other parameters.