APT5010JVR

500V 44A 0.100Ω

POWER MOS V ® S S

227
Power MOS V® is a new generation of high voltage N-Channel enhancement G D
T-
mode power MOSFETs. This new technology minimizes the JFET effect, SO
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout. "UL Recognized"
ISOTOP ®

• Faster Switching • 100% Avalanche Tested D

• Lower Leakage • Popular SOT-227 Package

G

S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT5010JVR UNIT

VDSS Drain-Source Voltage 500 Volts
ID Continuous Drain Current @ TC = 25°C 44
Amps
IDM 1
Pulsed Drain Current 176
VGS Gate-Source Voltage Continuous ±30
Volts
VGSM Gate-Source Voltage Transient ±40
Total Power Dissipation @ TC = 25°C 450 Watts
PD
Linear Derating Factor 3.6 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR 1
Avalanche Current (Repetitive and Non-Repetitive) 44 Amps
EAR 1 50
Repetitive Avalanche Energy
mJ
EAS Single Pulse Avalanche Energy 4
2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) 500 Volts
ID(on) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Amps
44
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) 0.100 Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 4 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5531 Rev C

APT Website - http://www.advancedpower.com

USA
405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
 DYNAMIC CHARACTERISTICS APT5010JVR

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Ciss Input Capacitance VGS = 0V 7400 8900
Coss Output Capacitance VDS = 25V 1000 1400 pF
Crss Reverse Transfer Capacitance f = 1 MHz 380 570
Qg Total Gate Charge 3 VGS = 10V 312 470
Qgs Gate-Source Charge VDD = 0.5 VDSS 50 75 nC
Qgd Gate-Drain ("Miller ") Charge ID = ID[Cont.] @ 25°C
127 190
td(on) Turn-on Delay Time VGS = 15V 14 30
tr Rise Time VDD = 0.5 VDSS 16 32
ns
td(off) Turn-off Delay Time ID = ID[Cont.] @ 25°C 54 80
tf RG = 0.6Ω
Fall Time 5 10

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

IS Continuous Source Current (Body Diode) 44
Amps
ISM Pulsed Source Current 1 (Body Diode) 176
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 Volts
t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) 620 ns
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs) 14.7 µC

THERMAL / PACKAGE CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT

RθJC Junction to Case 0.28
°C/W
RθJA Junction to Ambient 40
VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500 Volts
Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 13 lb•in

1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471
temperature. 4 Starting T = +25°C, L = 2.58mH, R = 25Ω, Peak I = 44A
j G L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.3

D=0.5
Z JC, THERMAL IMPEDANCE (°C/W)

0.1
0.2
0.05
0.1

0.05
Note:
0.01
0.02
PDM

t1
0.005 0.01
SINGLE PULSE t2

Duty Factor D = t1/t2

050-5531 Rev C

Peak TJ = PDM x ZθJC + TC

0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
 APT5010JVR
100 100
VGS=7V, 8V, 10V & 15V VGS=15V
6V
6V
ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

80 80
VGS=7V, 8V & 10V

60 5.5V 60 5.5V

40 40
5V 5V

20 20
4.5V 4.5V

4V 4V
0 0
0 50 100 150 200 250 0 2 4 6 8 10 12
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

100 1.5
TJ = -55°C NORMALIZED TO
V = 10V @ 0.5 I [Cont.]
GS D
ID, DRAIN CURRENT (AMPERES)

TJ = +25°C 1.4
80
TJ = +125°C

VDS> ID (ON) x RDS (ON)MAX. 1.3

60 250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.2
40 VGS=10V
VGS=20V
1.1
TJ = +125°C
20
TJ = +25°C TJ = -55°C 1.0

0 0.9
0 2 4 6 8 0 20 40 60 80 100 120
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
50 1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
ID, DRAIN CURRENT (AMPERES)

40 1.10
VOLTAGE (NORMALIZED)

30 1.05

20 1.00

10 0.95

0 0.90
50 75 100 125 150 25 -50
-25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

2.5 1.2
I = 0.5 I [Cont.]
D D
V = 10V
GS
VGS(TH), THRESHOLD VOLTAGE

1.1
2.0

1.0
(NORMALIZED)

(NORMALIZED)

1.5

0.9
1.0
0.8

0.5
0.7
050-5531 Rev C

0.0 0.6
-50-25 0 25 50 75 100 125 150 -50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 APT5010JVR
200 10µS 30,000
OPERATION HERE
100 LIMITED BY RDS (ON)

ID, DRAIN CURRENT (AMPERES)

100µS
50 10,000 Ciss

C, CAPACITANCE (pF)
5,000
1mS
10
Coss
5
10mS
1,000 Crss
100mS
1 DC 500
TC =+25°C
.5 TJ =+150°C
SINGLE PULSE

.1 100
1 5 10 50 100 500 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20 200

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = I [Cont.]
D D

VDS=100V 100
16 TJ =+150°C TJ =+25°C
VDS=250V 50

12

VDS=400V
8 10

5
4

0 1
100 200 0 300 400 500 0 0.4 0.8 1.2 1.6 2.0
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M4
H=4.8 (.187) (4 places)
H=4.9 (.193)
(4 places)

25.2 (0.992)
r = 4.0 (.157)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)

3.3 (.129) 1.95 (.077)

3.6 (.143) 2.14 (.084)
14.9 (.587) * Source Drain
15.1 (.594)
30.1 (1.185) * Source terminals are shorted
30.3 (1.193) internally. Current handling
38.0 (1.496) capability is equal for either
38.2 (1.504) Source terminal.

* Source Gate
Dimensions in Millimeters and (Inches)
050-5531 Rev C

ISOTOP® is a Registered Trademark of SGS Thomson. "UL Recognized" File No. E145592

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058