Finfet and Fabrication

process
What is Finfet??

➢ The important characteristic of FinFET is that the conducting channel

is wrapped by a thin Si “fin’ , which forms the body of the device. ➢
FinFET describe a nonplanar, double-gate transistor built on an SOI
substrate.
➢ The thickness of the fin determines the effective channel length of the
device.
➢ In terms of its structure, it typically has a vertical fin on a substrate
which runs between a larger drain and source area.
What is short channel effect
➢ short-channel effects occur in MOSFETs in which the channel length is
comparable to the depletion-layer widths of the source and drain junctions.
➢ These effects include,

★ drain-induced barrier lowering,

★ velocity saturation,
★ And hot carrier degradation.
Why Finfet???
➔ With technology scaling towards 14nm and beyond,it becomes extremely
difficult for conventional planar Field Effect Transistors (FETs) to
suppress a short channel effect (SCE).
➔ FinFET technology is used to overcome those issues.

Mosfet issues:

➢ Leakage currents is the primary barrier for scaling.

➢ Vt Variations.
➢ More gate capacitance.
Mosfet vs Finfet
➢ Leakage can be suppressed by using
Thin body.
➢ Currents can be controlled by two gates.
➢ The main principle behind both the
structures is a thin body, so the gate
capacitance is closer to whole channel.

Structure of Finfet
 ➢ The gate is wrapped around the channel
providing excellent control from three
sides of the channel.
➢ The body is very thin. So, there is no leakage
path which is far from the gate.
➢ The gate can effectively control the leakage.

Fabrication process
➢ Lightly doped substrate with
hard
Mask and SiGe for cap
Layer.
➢ Deposite hard mask on top of
substrate.
Spacer formation

➢ Deposition of SiGe hard

mask layer.

➢ Using self aligned double

patterning (SADP) spacer are
formed.
 Etching

➢ Etch the spacers into hard mask

➢ Using hard mask, etch the pattern

into Substrate and formed a silicon
fins.
➢ Remove the hard mask using
etching.
➢ SiN is on top of fins.
➢ If keep the SiN on top, we
can Used as double gate finfet
(DG finfet).
➢ If remove the SiN , we can
 used as Tri-Gate finfet.
Oxide deposition

➢ Fill the trenches with oxide.

➢ Oxide deposition is isolated fins from each other.
➢ To reduce the leakage currents , The gate electrode is wrapped around the channel.
CMP:
➢ Using CMP planarization is done.
Formation of fins

➢ Etch this oxide back,

How deep you etch
defines the
 Height of finfet device.
➢ Width of the device will defined at
patterning.
Another process:
Replacement
of fin

➢ Here SiN is thick.

➢ Using self aligned double
patterning (SADP) spacers
are formed.
Etching
➢ Etch those spacer into
hard mask. ➢ Etch the
pattern into SiN using Hard
mask.
➢ Etch the silicon nitride into
substrate.
Oxidation

➢ Remove the hard mask

➢ Fill the trenches with
oxide.
➢ After CMP process
oxide will be
Planarized.
 .

➢ Remove the
silicon nitride
from Spacer.
➢ Fill the silicon in
trenches
 .
➢ Etch back the oxide i.e, sio2 ➢
Height of the fin determine by how
we etch back.
➢ Width is determine the mold Which
 is filled with silicon. ➢ If we want to
change the material Of fin, replacement
of fin process Is easy.
Finfet process challenges

➢ Due to constant potential surface, Electric field at corner is more compare to

sides walls.
➢ Performance of device will become bad due vt variations at corners and side
walls.
To avoid corner effect
 Due to nitrate layer at top,
corner effect can be avoided.
Advantages of Finfet over
Mosfet
➢ Lower leakage currents.
➢ Lower gate capacitance.
➢ Suppressed short channel effects.
➢ Ability to operate with a lower supply voltage.
➢ Faster switching speed. (comes from lower input capacitance and
higher dynamic current density)
➢ Lower power consumption (comes from lower parasitic capacitance
 and better on/off characteristics).

References
● https://www.halbleiter.org/en/fundamentals/construction-of-a-fi
nfet/

● https://www.youtube.com/watch?v=lL5A4DblL3E&index=8&list=P
LpIaPbuZ0EL-38IJxB8pK7uP_Is6UIJ_D

● https://www.youtube.com/watch?v=Jctk0DI7YP8